JP2008300617A5 - - Google Patents

Claims (13)

The laser beam is irradiated to a semiconductor film formed on a substrate and in a non-oxidizing treatment atmosphere contains hydrogen gas, while maintaining the temperature of the substrate below the melting point of the substrate, the semiconductor film 1000 ° C. or higher A laser annealing method for crystallizing the semiconductor film by heating and melting and then solidifying,
The laser annealing method , wherein the processing atmosphere includes a semiconductor etching gas for etching the semiconductor film . In claim 1,
The semiconductor etching gas, laser annealing method, wherein the fluorine-based, chlorine-based or bromine-based gas. In claim 1 or 2,
The treatment atmosphere is a laser annealing method, which comprises a low vapor pressure gases to the equilibrium vapor pressure at the melting point of the semiconductor film below atmospheric pressure. In any one of Claims 1 thru | or 3,
The laser beam is an excimer laser, YAG laser, YLF laser, YVO ₄ laser, a laser annealing method, wherein the glass laser, a fundamental wave or harmonic of a semiconductor laser or CO ₂ laser. In any one of Claims 1 thru | or 4,
Laser annealing method, wherein the laser beam is a pulsed light or continuous light. A gas supply device that includes a hydrogen gas and supplies a non-oxidizing treatment atmosphere in a range that covers at least a portion irradiated with laser light in the semiconductor film,
Irradiating laser light to the semiconductor film in said processing atmosphere, while maintaining the temperature of the substrate below the melting point of the substrate, by subsequently solidifying melted by heating the semiconductor film above 1000 ° C., the A laser annealing apparatus for crystallizing a semiconductor film,
The laser annealing apparatus , wherein the processing atmosphere includes a semiconductor etching gas for etching the semiconductor film . In claim 6,
The treatment atmosphere is a laser annealing apparatus which comprises a low vapor pressure gases to the equilibrium vapor pressure at the melting point of the semiconductor film below atmospheric pressure. In claim 6 or 7,
The gas supply device, a laser annealing apparatus, wherein the a chamber was housed inside the housing space of the substrate the substrate on which the semiconductor film is formed is filled with the treatment atmosphere. In any one of Claims 6 thru | or 8,
The gas supply device, a laser annealing apparatus characterized by having a fan for forced convection processing atmosphere in the housing space. In any one of Claims 6 thru | or 9,
The gas supply device, a laser annealing apparatus, wherein said a gas blowing device for supplying the processing atmosphere only the irradiation portion and limiting the scope of the surrounding of the laser beam in the semiconductor film. In any one of Claims 6 thru | or 10,
On an optical path of the laser beam, said laser beam comprises a beam shaping optical system for shaping into a linear beam, wherein the beam shaping optical system, uniform energy distribution in the long axis direction及beauty short axis direction of the linear beam A laser annealing apparatus comprising a homogenizer for converting into a laser. In claim 11,
The homogenizer includes a cylindrical lens array or waveguide divides the laser light into a plurality in a direction corresponding to the long axis direction及beauty short axis direction of the linear beam, laser divided by the cylindrical lens array or waveguide A laser annealing apparatus having a condenser lens for superimposing light. In claim 11,
The homogenizer, laser annealing apparatus, characterized in that the optical system including a diffractive optical element.