JPS6027117A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To devise the improvement of film quality by recrystallizing an amorphous or a polycrystalline GaAs layer formed on an insulation substrate after melted by heating due to energy ray irradiation under an atmosphere of As to improve the crystallization. CONSTITUTION:A GaAs film 2 is irradiated with energy rays. At the time of irradiation, a heater 9 is controlled to make the temperature of As 7 equal to the melting point of GaAs. While the GaAs is melted, the As is evaporated in the atmosphere. Since the pressure of the As atmosphere is equal to the pressure of the saturated vapor of As when the GaAs is melted, the crystalline granule of the GaAs grows to a greater crystalline granule or a single crystal without destroying chemical equivalence.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of forming a semiconductor crystal layer on an insulator.

In order to increase the speed and density of semiconductor devices, attempts have been made to separate circuit elements with a dielectric material and manufacture semiconductor integrated circuits with low stray capacitance. One method is to form a semiconductor layer on an insulator. However, there is a method of configuring circuit elements in the semiconductor crystal.

Conventionally, as a method of cutting this semiconductor crystal layer into a shape 1, a polycrystalline or amorphous semiconductor layer is deposited on an insulator, and an energy beam f:It' such as Raded light or a Seiko beam is applied to the surface of the polycrystalline or amorphous semiconductor layer.
There is a method of heating only the surface layer by irradiation to form a single crystal semiconductor layer.

Figure 1 shows a conventional method for manufacturing a semiconductor device.

In the figure, (11 is a quartz substrate that is to become an insulating substrate. Polycrystalline GaAs 121 is deposited on this to a thickness of 5000 by the M BFi method. This substrate is placed in the '8 box (3). GaAs (2) is scanned with narrowly focused energy beams (6) such as laser beams and electron beams.
LFT4 is irradiated onto the surface to melt the GaAs and make it into single crystal or large crystal grain GaAs. In the case of alpha energy ray irradiation, nitrogen or inert gas is introduced into the container (3) through the inlet (exhaust port) tr+ (b).

In the case of electron gravel irradiation, the inside of the container (3) is evacuated.

After that, all devices are fabricated on this GaAs according to a known process.

However, in the above conventional method, since the vapor pressure of As is high, during the energy ray 1) α irradiation, the A in the melted GaAg is
There was a drawback that s was released into the atmosphere and the chemical equivalence of the recrystallized GaA6 film was destroyed.

This method was developed in order to eliminate the drawbacks of the conventional method as described above, and it is possible to expose an amorphous or polycrystalline GaAs layer provided on an insulating substrate to energy rays under an atmosphere of %hs"4. The object of the present invention is to provide a method for manufacturing a semiconductor device in which the recrystallized GaAs layer has good crystallinity and improved film quality by melting it young by heating with 1α radiation and recrystallizing it. Chiru.

FIG. 2 shows a method for manufacturing a semiconductor device according to an embodiment of the present invention. In the figure, ill~+51 I′io1
Same as the figure, (6) is an energy beam, but laser light, infrared rays, and visible light are used. Father, (7) is As, a, s, which generates steam, 18) Harutsu, (9) is a heater for heating the Harutuba.

Now, after evacuating the closed container (3), this GaA s
GaA (2) is recrystallized by irradiating it with an energy beam such as a laser beam, and during the energy beam irradiation, the temperature of the heater (9) is changed to that of GaA
The melting point of GaAs (125B") is controlled to be the same K as C1.
2) melts, and j((When one injection is completed, Ga1is is assimilated and recrystallized.
S evaporates into the surrounding atmosphere, but the atmosphere is at a pressure equal to the saturated vapor pressure of As at the ray of GaAs (approximately 7.6 torr).
Since the AB bubble of J is 114 air, the number of As released into the atmosphere and the number of Ae incident on GaAs from the atmosphere are 4+.

A thermal equilibrium is reached where the temperature decreases. Therefore, the crystal grains of GaAs are
1) Grows into a crystal grain or single crystal without losing its originality.

In addition, in the above embodiment, the error is replaced by GaAs (valley 1).
Although the As pressure was set to be equal to the As saturated vapor pressure at the time of eclipse, the purpose of the J phase can be achieved even if the pressure is slightly different.

Further, in the above embodiment, the pressure of Ae was controlled by temperature, or it may be controlled by attaching a bonder T to the JJL air port (41).

Furthermore, as a reference, if the amorphous or polycrystalline semiconductor provided on the insulating substrate is nP or GaP,
By performing melting and recrystallization using energy rays in a P atmosphere, the same effects as in the case of GaAs in the above embodiment can be obtained.

As explained above, the present invention improves crystallinity by melting and recrystallizing an amorphous or polycrystalline GaAs layer provided on an insulating substrate by heating with energy AJt irradiation in an ASd atmosphere. As a result, film quality can be improved and LT semiconductor devices can be subjected to riW.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a conventional method for manufacturing a semiconductor device, and FIG. 2 is a sectional view showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. In the figure (11 is a quartz substrate, (2) is a poly-IG crystal Ga
A gjso, (3) is a closed container, (4) is a vent, (
6) is the energy line, (7) is the AEI, (81 is Haruha, and (9) is the heater. In the figure, the same reference numerals are the same and indicate the I/i4 target part. Agent: Oka Masuo

Claims (1)

[Claims] 11+ Amorphous or polycrystalline G on an insulating substrate
1. A method for manufacturing a semiconductor device in which an aAs layer is melted and recrystallized by heating with energy ray irradiation, characterized in that the atmosphere during energy ray irradiation is an As atmosphere. (2) The atmosphere during energy beam irradiation is G'aAfi
2. The method of manufacturing a semiconductor device according to claim 1, wherein the atmosphere is a saturated vapor pressure atmosphere of As at a melting temperature of .