JP2008283467A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2008283467A JP2008283467A JP2007125852A JP2007125852A JP2008283467A JP 2008283467 A JP2008283467 A JP 2008283467A JP 2007125852 A JP2007125852 A JP 2007125852A JP 2007125852 A JP2007125852 A JP 2007125852A JP 2008283467 A JP2008283467 A JP 2008283467A
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- 238000003384 imaging method Methods 0.000 title claims description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 238000001514 detection method Methods 0.000 claims description 30
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 230000003321 amplification Effects 0.000 claims description 4
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/76—Circuitry for compensating brightness variation in the scene by influencing the image signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- Solid State Image Pick-Up Elements (AREA)
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Abstract
【解決手段】たとえば、CDS/ADC21は、フォトダイオードPD1,PD2の信号電荷を、三角波VREFを用いてデジタル信号に変換する。その信号をもとに、飽和信号レベル算出回路31は、フォトダイオードPD1,PD2の飽和信号レベルを算出する。パラメータMAXレベル設定回路36は、三角波VREFの振幅レベルを制御するための、レベル設定時に設定されるパラメータMAXレベルを、実際のセンサ動作時に、飽和信号レベル算出回路31からの飽和信号レベルに応じて最適化する。その最適値にしたがって、VREF発生回路38は、AD変換処理に用いる三角波VREFを発生する。
【選択図】 図1
Description
図1は、本発明の第1の実施形態にしたがった、固体撮像装置の基本構成を示すものである。ここでは、垂直2画素1セル構造の、増幅型のCMOSイメージセンサを例に説明する。
Claims (5)
- 光電変換素子によって光電変換した信号電荷を出力する画素部と、
前記画素部からの出力信号をデジタル信号に変換する変換回路と、
前記変換回路からの前記デジタル信号をもとに、前記光電変換素子の飽和信号レベルを算出する飽和信号レベル算出回路と、
前記飽和信号レベル算出回路からの前記飽和信号レベルに応じて、前記変換回路で用いる前記変換回路の最大信号レベルを設定する設定回路と
を具備したことを特徴とする固体撮像装置。 - 前記画素部は、二次元的に配置された複数のセルを有し、前記複数のセルは、それぞれ、第1の光電変換素子と、前記第1の光電変換素子の信号電荷を検出部に読み出す第1の読み出し用トランジスタと、前記検出部をリセットするための第1のリセットトランジスタ、および、前記検出部に読み出された前記信号電荷を増幅するための第1の増幅用トランジスタを含む、画素構造を有することを特徴とする請求項1に記載の固体撮像装置。
- 前記画素部には、さらに、飽和レベルの信号電荷の注入と読み出しとが行われる電荷注入用のセルが設けられていることを特徴とする請求項1または2に記載の固体撮像装置。
- 前記電荷注入用のセルは、
第2の光電変換素子と、前記第2の光電変換素子の信号電荷を検出部に読み出す第2の読み出し用トランジスタと、前記検出部をリセットするための第2のリセットトランジスタ、および、前記検出部に読み出された前記信号電荷を増幅するための第2の増幅用トランジスタを含む、画素構造を有するとともに、
さらに、前記第2のリセットトランジスタのドレイン電圧を制御するドレイン電圧制御回路を備え、
前記ドレイン電圧制御回路によって前記第2のリセットトランジスタのドレイン電圧が0Vに制御された状態で、前記飽和レベルの信号電荷の注入が、前記第2の光電変換素子に対して行われることを特徴とする請求項3に記載の固体撮像装置。 - 前記飽和レベルの信号電荷の注入と読み出しは、垂直帰線期間内に動作させることを特徴とする請求項3または4に記載の固体撮像装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007125852A JP4439536B2 (ja) | 2007-05-10 | 2007-05-10 | 固体撮像装置 |
US12/114,260 US7990453B2 (en) | 2007-05-10 | 2008-05-02 | Solid-state image sensor and signal processing method thereof |
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JP2007125852A JP4439536B2 (ja) | 2007-05-10 | 2007-05-10 | 固体撮像装置 |
Publications (2)
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JP2008283467A true JP2008283467A (ja) | 2008-11-20 |
JP4439536B2 JP4439536B2 (ja) | 2010-03-24 |
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JP2007125852A Expired - Fee Related JP4439536B2 (ja) | 2007-05-10 | 2007-05-10 | 固体撮像装置 |
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US (1) | US7990453B2 (ja) |
JP (1) | JP4439536B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8305459B2 (en) | 2009-11-25 | 2012-11-06 | Kabushiki Kaisha Toshiba | Image processing apparatus and camera module |
JP2013504400A (ja) * | 2009-09-16 | 2013-02-07 | メディグス リミテッド | 小径ビデオカメラヘッドおよび可視化プローブおよびそれらを組み込んだ医療機器 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4745735B2 (ja) * | 2005-06-30 | 2011-08-10 | キヤノン株式会社 | 画像入力装置及びその制御方法 |
JP2010041655A (ja) * | 2008-08-08 | 2010-02-18 | Toshiba Corp | 固体撮像装置の駆動方法 |
US20140320621A1 (en) | 2009-09-16 | 2014-10-30 | Medigus Ltd. | Small diameter video camera heads and visualization probes and medical devices containing them |
EP3579548B1 (en) * | 2017-02-01 | 2021-09-22 | Sony Semiconductor Solutions Corporation | Imaging system, imaging device, and control device |
KR20200098802A (ko) | 2019-02-12 | 2020-08-21 | 삼성전자주식회사 | 디지털 픽셀을 포함하는 이미지 센서 |
WO2022199952A1 (en) * | 2021-03-24 | 2022-09-29 | Sony Semiconductor Solutions Corporation | Image sensor assembly, solid-state imaging device and time-of-flight sensor assembly |
CN116257207B (zh) * | 2022-09-08 | 2023-10-03 | 重庆位图信息技术有限公司 | 一种数据截位方法、模块、计算机设备及存储介质 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674470B1 (en) | 1996-09-19 | 2004-01-06 | Kabushiki Kaisha Toshiba | MOS-type solid state imaging device with high sensitivity |
JP3461265B2 (ja) | 1996-09-19 | 2003-10-27 | 株式会社東芝 | 固体撮像装置および固体撮像装置応用システム |
US6912003B1 (en) * | 1997-07-07 | 2005-06-28 | Institute For Mikroelektronik | Methods of and circuit array for compensating variations induced by temperature strain and manufacture in CMOS video sensors |
US20030202111A1 (en) * | 2002-04-30 | 2003-10-30 | Jaejin Park | Apparatus and methods for dark level compensation in image sensors using dark pixel sensor metrics |
JP2004349985A (ja) | 2003-05-21 | 2004-12-09 | Sharp Corp | 固体撮像装置およびその駆動方法 |
JP4470425B2 (ja) | 2003-09-12 | 2010-06-02 | ソニー株式会社 | 単位信号補正方法および半導体装置、並びに半導体装置の駆動制御方法および駆動制御装置 |
-
2007
- 2007-05-10 JP JP2007125852A patent/JP4439536B2/ja not_active Expired - Fee Related
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2008
- 2008-05-02 US US12/114,260 patent/US7990453B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013504400A (ja) * | 2009-09-16 | 2013-02-07 | メディグス リミテッド | 小径ビデオカメラヘッドおよび可視化プローブおよびそれらを組み込んだ医療機器 |
US8305459B2 (en) | 2009-11-25 | 2012-11-06 | Kabushiki Kaisha Toshiba | Image processing apparatus and camera module |
Also Published As
Publication number | Publication date |
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US20080278612A1 (en) | 2008-11-13 |
JP4439536B2 (ja) | 2010-03-24 |
US7990453B2 (en) | 2011-08-02 |
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