JP2008281439A - Carrier for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a carrier for semiconductor devices for displaying a sufficient static elimination effect by a relatively simple structure. <P>SOLUTION: The carrier for semiconductor devices is equipped with: a pick-up device carrying picked-up semiconductor devices via a mount-opening part to a board for mounting; and an ionizer being an ionizer for supplying ions for static elimination to the mount-opening part, comprising an ion generation part generating the ions for static elimination and an air delivery piping part for delivering air to the generation part, and mixing the ions for static elimination generated in the generation part into the air delivered from the piping part to send out the mixture from the generation part. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a transport device for a semiconductor device.

  2. Description of the Related Art A burn-in apparatus is known as an apparatus for performing a burn-in test, which is a kind of screening test for revealing an initial failure of a semiconductor device such as an electronic component and removing an initial failure product. This burn-in device is a type of semiconductor test device. A burn-in board with a plurality of semiconductor devices, which are devices under test, is housed in the burn-in device, and voltage is applied to the semiconductor device to apply electrical stress. In addition to heating the air inside the thermostatic chamber and applying a thermal stress at a predetermined temperature, the initial failure becomes obvious. Further, in this burn-in test, an operation power supply and a signal are supplied to the semiconductor device, an operation test of the semiconductor device is performed, and a test is performed to check whether each semiconductor device is operating normally.

  In such a burn-in apparatus, since a long-time burn-in test is performed for several hours to several tens of hours, a plurality of semiconductor devices are inserted into one burn-in board in order to improve test efficiency. In general, a plurality of burn-in boards are stored in a burn-in apparatus and a burn-in test is performed.

  Since many semiconductor devices are mounted on the burn-in board, a transfer device is widely used for mounting the semiconductor device on the tray on the burn-in board or removing the mounted semiconductor device without human intervention. ing. A semiconductor device carrying device that performs such work is also called an inserter / uninserter. When inserting a semiconductor device, the semiconductor device arranged on the tray is picked up by the pickup device, and the burn-in board socket is inserted. The operation of inserting into the socket is repeated until the semiconductor devices are inserted into all the sockets. Also, when uninserting a semiconductor device, the semiconductor device inserted in the socket of the burn-in board is removed with a pickup device and placed on the tray until the semiconductor device is removed from all sockets. repeat.

  However, static electricity is generated when the semiconductor device is picked up or inserted by the pickup device, and this static electricity is accumulated in the semiconductor device. That is, static electricity generated by contact charging such as peeling charging, collision charging, friction charging, and the like is accumulated in the semiconductor device. In particular, the burn-in board socket is generally provided with a claw portion having an opening / closing mechanism for ensuring the mounting of the semiconductor device. The opening / closing mechanism of the claw portion also opens and closes the friction. Static electricity is generated by charging, and the semiconductor device is charged.

  When the burn-in board with this charged semiconductor device is inserted into a burn-in board cart at a ground potential or into a slot of the burn-in device, static electricity accumulated in the semiconductor device is discharged at once, and the semiconductor device May be damaged.

  In order to prevent such damage to the semiconductor device due to static electricity, Japanese Patent Laid-Open No. 7-58184 (Patent Document 1) removes the static electricity of the semiconductor device from the inside of the transfer arm to the semiconductor device picked up by the pickup device. A technique for feeding ions for the purpose is disclosed. However, such a method is not preferable because the structure of the transfer arm is complicated and the transfer arm has many movable parts. In addition, the manufacturing cost of the transfer arm is increased.

Japanese Patent Application Laid-Open No. 2001-44089 (Patent Document 2) discloses a technique for removing a static electricity from a semiconductor wafer in a clean room by providing a soft X-ray irradiation device above the clean room. However, it is not expected that a sufficient static electricity removing effect is exhibited only by providing a soft X-ray irradiation device above the space having a large volume.
JP-A-7-58184 JP 2001-44089 A

  SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a transport device for a semiconductor device that can exhibit a sufficient static electricity removing effect with a relatively simple configuration.

In order to solve the above problems, a transport device for a semiconductor device according to the present invention includes:
A pick-up device for transporting the picked-up semiconductor device to the mounting board through the mount opening;
An ionizer for supplying static-removing ions to the mount opening, an ion generator for generating the static-removing ions, and an air delivery pipe for delivering air to the ion generator An ionizer that mixes the ions for removing static electricity generated by the ion generator into the air delivered from the air delivery pipe unit and sends out the ions from the ion generator,
It is characterized by providing.

  In this case, a discharge port forming portion in which a discharge port for discharging the air sent from the ion generation unit is formed may be provided on the air sending direction side of the ion generation unit.

  In this case, the discharge port forming portion may be disposed around the mount opening so as to match the shape of the mount opening.

  Alternatively, the discharge port forming part may be arranged linearly along one side of the mount opening.

  Further, the opening of the ion generating unit on the air sending direction side of the ion generating unit functions as a discharge port for discharging air mixed with ions for removing static electricity to the mount opening. You may be made to do.

  Further, the discharge port may be arranged so that the air sent from the ion generation unit is discharged toward the mounting board.

  The pick-up device may perform a process of mounting the picked-up semiconductor device on a mounting board through the mount opening.

  Further, the pickup device may perform a process of picking up and removing the semiconductor device mounted on the mounting board through the mount opening.

The transport device for a semiconductor device further includes a power line for supplying power to the ion generation unit,
The ion generation unit may generate the static elimination ions by supplying power supplied from the power supply line to a discharge needle provided in the ion generation unit.

BEST MODE FOR CARRYING OUT THE INVENTION

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the embodiments described below do not limit the technical scope of the present invention.

[First Embodiment]
FIG. 1 is a block diagram illustrating a process of mounting a semiconductor device on a burn-in board BIB using the transport device 10 for a semiconductor device according to the first embodiment.

  As shown in FIG. 1, semiconductor devices DUT, which are devices under test to be mounted on the burn-in board BIB, are arranged on the tray 20. An arbitrary number of semiconductor devices DUT are arranged on the tray 20.

  The tray 20 on which the semiconductor devices DUT are arranged is mounted on the mounting table 30. The mounting table 30 includes a main body portion 32 that forms a basic part of the mounting table 30 and a conductive mat 34 that covers the upper surface side of the main body portion 32. The conductive mat 34 is a conductive mat having a high resistance value. For example, in the present embodiment, the conductive mat 34 has a resistance value of 1 MΩ to 10 MΩ. The main body 32 is grounded. Therefore, even if the semiconductor devices DUT arranged on the tray 20 are charged, they are gradually discharged through the conductive mat 34 having a high resistance.

  The tray 20 on which the semiconductor devices DUT are arranged is carried into the transfer device 10 of the semiconductor device automatically by a machine or manually. In the semiconductor device transfer device 10, the semiconductor device DUT is picked up from the tray 20 by the pickup device provided in the IC handling device, and is inserted into the socket of the burn-in board BIB. An ionizer 40 is provided in the transport device 10 of the semiconductor device in order to remove static charge caused by picking up and inserting the semiconductor device DUT.

  The ionizer 40 is an apparatus that generates ions, and generally includes a type that generates both positive ions and negative ions, and a type that generates one of price ions and negative ions. Which type of ionizer is used can be arbitrarily selected based on whether the main static electricity generated is positive or negative. However, since it is generally considered that the type that generates both positive ions and negative ions is more convenient, in this embodiment, the ionizer 40 has both positive ions and negative ions. The type that occurs is used. Ions generated by the ionizer 40 are supplied to the semiconductor device DUT on the burn-in board BIB. For this reason, the charged semiconductor device DUT is gradually discharged and neutralized by the ions supplied from the ionizer 40.

  When the semiconductor device transport apparatus 10 finishes mounting the semiconductor device DUT in all the sockets of the burn-in board BIB, the burn-in board BIB is inserted into the slot of the carrier rack CR. In general, since a plurality of burn-in boards BIB can be accommodated in the carrier rack CR, the transport device 10 of the semiconductor device can carry out the tray 20 until the burn-in boards BIB are completely inserted into all slots of the carrier rack CR. The semiconductor device DUT is picked up, the semiconductor device DUT thus picked up is attached to the burn-in board BIB socket, and the burn-in board BIB is inserted into the slot of the carrier rack CR.

  The carrier rack CR in which the burn-in board BIB is inserted into all the slots is carried out of the transport device 10 of the semiconductor device by using the carriage 50, automatically by a machine or manually. The carried-out carrier rack CR is carried into a burn-in device, and a burn-in test is performed in the burn-in device.

  FIG. 2 is a block diagram illustrating a process of removing the semiconductor device DUT from the burn-in board BIB using the semiconductor device transfer apparatus 10 according to the present embodiment. The operation for removing the semiconductor device DUT is basically the reverse procedure of the operation for mounting the semiconductor device DUT described above.

  As shown in FIG. 2, the semiconductor device DUT in which the burn-in test in the burn-in device has been completed is carried out automatically or manually by a machine using a carriage 50 on which a carrier rack CR is placed. It is carried in.

  The semiconductor device transfer apparatus 10 takes out the burn-in board BIB from the slot of the carrier rack CR. The pickup device of the IC handling device picks up the semiconductor device DUT from the socket of the burn-in board BIB and arranges it on the tray 20. The tray 20 in which the semiconductor devices DUT have been arranged is unloaded from the transfer device 10 of the semiconductor device automatically by a machine or manually, and is placed on the mounting table 30.

  When the pickup device of the IC handling device picks up the semiconductor device DUT from the socket of the burn-in board BIB, static electricity may be generated and the semiconductor device DUT may be charged. Static electricity generated during the pickup is removed.

  FIG. 3 is a layout diagram illustrating an example of the configuration of the transport device 10 of the semiconductor device illustrated in FIGS. 1 and 2. As shown in FIG. 3, the transport device 10 of the semiconductor device according to the present embodiment includes a tray transport unit 60, a handling unit 70, and a burn-in board elevator unit 80.

  The tray transport unit 60 is a device for transporting the tray 20 on which the semiconductor devices DUT are arranged. When mounting the semiconductor device DUT on the burn-in board BIB, the tray 20 on which the semiconductor devices DUT are arranged is loaded and sent to the handling unit 70.

  The handling unit 70 is provided with an IC handling device 72. The IC handling device 72 includes a moving plate 74 that freely moves in the X-axis direction (left-right direction in the figure), and pick-up devices 76 and 78 that are provided on the moving plate 74 and pick up the semiconductor device DUT. . The pickup devices 76 and 78 can move freely in the Y-axis direction (the depth direction in the figure) and the Z-axis direction (the vertical direction in the figure).

  Under the pickup devices 76 and 78, suction portions 90 and 92 for sucking and picking up the semiconductor device DUT are provided, respectively. Although the number of suction units 90 and 92 is arbitrary, by providing a plurality of suction units 90 and 92, a plurality of semiconductor devices DUT can be picked up simultaneously.

  In the present embodiment, the pickup devices 76 and 78 are mechanisms for picking up the semiconductor device DUT by sucking the semiconductor device DUT with air, but the semiconductor device DUT may be picked up by a different mechanism.

  Of the two pickup devices 76 and 78, the pickup device 76 picks up the semiconductor devices DUT arranged on the tray 20 and arranges them on the relay pedestal 100. The relay pedestal 100 is a pedestal for temporarily arranging the semiconductor devices DUT picked up from the tray 20.

  More specifically, when the moving plate 74 moves in the X-axis direction and the pickup device 76 moves in the Y-axis direction, the suction unit of the pickup device 76 is positioned at the position of the semiconductor device DUT on the tray 20 to be picked up. Align 90 position. Then, after the pickup device 76 moves downward in the Z-axis direction and the suction unit 90 sucks and picks up the semiconductor device DUT on the tray 20, the pickup device 76 moves upward in the Z-axis direction.

  With the pickup device 76 thus picking up and holding the semiconductor device DUT, the movable plate 74 is moved again in the X-axis direction, and the pickup device 76 is moved in the Y-axis direction, thereby holding the held semiconductor. The position of the device DUT is adjusted to the position where the relay base 100 should be arranged. Then, the pickup device 76 moves downward in the Z-axis direction, and the suction unit 90 stops the suction of the semiconductor device DUT, so that the semiconductor device DUT is placed on the relay base 100. The pickup device 76 that has released the semiconductor device DUT moves upward in the Z-axis direction. By such an operation, the transfer of the semiconductor device DUT from the tray 20 to the relay base 100 is completed.

  A mount opening 120 is formed in the transfer substrate 110 of the transfer device 10 of the semiconductor device. In the present embodiment, the tray 20 and the relay pedestal 100 described above are placed on the transport substrate 110. In the present embodiment, the transport mechanism of the semiconductor device DUT is formed above the transport substrate 10 in the handling unit 70, and the transport mechanism of the burn-in board BIB is formed below the transport substrate 110.

  The transport mechanism of the burn-in board BIB controls the transport of the burn-in board BIB so that the burn-in board BIB on which the semiconductor device DUT is to be mounted is positioned below the mount opening 120. That is, the burn-in board BIB transport mechanism moves the burn-in board BIB on which the semiconductor device DUT is to be mounted in the X-axis direction, the Y-axis direction, and the Z-axis direction, and performs the burn-in board BIB transport process.

  4 is a drawing showing a state in which the vicinity of the mount opening 120 according to the present embodiment is viewed from above, and FIG. 5 is a partial cross-sectional view of the vicinity of the mount opening 120 according to the present embodiment.

  The mounting operation of the semiconductor device DUT will be described in detail with reference to FIGS. First, the burn-in board BIB is conveyed below the mount opening 120 and stops at a predetermined position. The pick-up device 78 mounts the semiconductor device DUT on the socket SKT of the stationary burn-in board BIB.

  Specifically, when the moving plate 74 moves in the X-axis direction and the pickup device 76 moves in the Y-axis direction, the suction unit of the pickup device 78 is positioned at the position of the semiconductor device DUT to be picked up on the relay base 100. Align position 92. Then, after the pickup device 78 moves downward in the Z-axis direction and the suction unit 92 sucks and picks up the semiconductor device DUT from the relay base 100, the pickup device 78 moves upward in the Z-axis direction.

  With the semiconductor device DUT picked up and held in this way, the moving plate 74 is moved again in the X-axis direction, and the pickup device 78 is moved in the Y-axis direction, so that the position of the held semiconductor device DUT is reached. Is adjusted to the position of the socket SKT of the burn-in board BIB to be mounted. Then, the pickup device 78 moves downward in the Z-axis direction, the suction unit 92 stops sucking the semiconductor device DUT, and the semiconductor device DUT is inserted into the socket SKT, whereby the semiconductor device DUT is inserted into the socket SKT of the burn-in board BIB. Installed. With such an operation, the mounting of the semiconductor device DUT from the relay base 100 to the socket SKT of the burn-in board BIB is completed.

  The burn-in board BIB in which the semiconductor device DUT is mounted in all the sockets SKT is carried out to the burn-in board elevator unit 80. In the burn-in board elevator section 80, the carrier rack CR moves in the Z-axis direction, and the burn-in board BIB carried out from the handling section 70 is inserted into an empty slot of the carrier rack CR. The carrier rack CR in which the burn-in board BIB is inserted into all the slots is unloaded from the burn-in board elevator unit 80, and a burn-in test is performed by the burn-in device.

  The operation at the time of inserting the semiconductor device DUT into the burn-in board BIB is as described above, but the operation at the time of uninserting the semiconductor device DUT from the burn-in board BIB is realized by an operation opposite to the operation described above.

  That is, the carrier rack CR is carried into the burn-in board elevator section 80 from the burn-in device. A burn-in board BIB in which the semiconductor device DUT for which the burn-in test has been completed is mounted in the socket SKT is inserted into the slot of the carrier rack CR.

  The burn-in board BIB taken out from the slot of the carrier rack CR is carried into the handling unit 70 and stops at a position below the mount opening 120 of the transport device 10. Then, the pickup device 78 sequentially removes the semiconductor devices DUT from the sockets SKT of the burn-in board BIB through the mount opening 120 and places them on the relay pedestal 100.

  The semiconductor device DUT placed on the relay pedestal 100 is picked up by the pickup device 76 and arranged on the tray 20. The tray 20 on which the semiconductor devices DUT for which the burn-in test has been completed is arranged is transferred from the handling unit 70 to the tray transfer unit 60, and is transferred from the tray transfer unit 60 to the outside of the transfer device 10 of the semiconductor device.

  In addition, as described above, the transport device 10 of the semiconductor device according to the present embodiment is provided with the ionizer 40 that sends air including static elimination ions to the mount opening 120. The ionizer 40 includes a control unit 42, an ion generation unit 44, and a discharge port formation unit 46. In the present embodiment, the ion generator 44 is installed in the vicinity of the mount opening 120, and the control unit 42 is installed at an arbitrary location away from the mount opening 120.

  The control unit 42 controls the amount of ions generated by the ionizer 40 and the amount of air that is sent out. Between the control unit 42 and the ion generating part 44, an air delivery piping part 47A and a power supply line 47B are arranged.

  The air delivery piping unit 47A delivers the air sent out from the control unit 42 to the ion generation unit 44. In the present embodiment, the air delivered by the air delivery piping section 47A is generated by the control unit 42 adjusting the pressure of the air supplied from the outside of the transfer device 10 of this semiconductor device. That is, the control unit 42 receives a request for air from a compressed air pipe provided in a factory or the like where the transfer device 10 of the semiconductor device is installed, and after adjusting the pressure, delivers it to the ion generator 44. ing.

  However, if there is no compressed air piping at the place where the transfer device 10 of this semiconductor device is installed, an air compressor is built in the control unit 42 to generate ions of necessary pressure from the control unit 42. You may make it send out to the part 44. FIG.

  In addition, the control unit 42 supplies power to the ion generator 44 via the power line 47B. As described above, the power supplied by the control unit 42 via the power line 47B may be an AC power supply or a DC power supply depending on the type of the ionizer 40. Regardless of the type, the control unit 42 controls the amount of ions generated by the ion generation unit 44 by controlling the power supplied through the power line 47B.

  FIG. 6 is an enlarged cross-sectional view for explaining the structure in the vicinity of the ion generator 44 according to the present embodiment. As shown in FIG. 6, the ion generator 44 is provided with a discharge needle 47 </ b> C that generates ions. The discharge needle 47C is supplied with power from the power line 47B, and the supplied power generates ions for removing static electricity. Ions generated by the discharge needle 47C are mixed into the air delivered by the air delivery piping part 47A and sent out to the discharge port forming part 46. In FIG. 6, only one discharge needle 47 </ b> C is provided, but the number of discharge needles 47 </ b> C provided in the ion generation unit 44 can be arbitrarily changed.

  In general, the constituent members of the air delivery pipe 47A and the ion generator 44 are connected to the ground. When the constituent member is connected to the ground in this way, the direction and position of the discharge needle 47C are used to prevent the ions generated by the discharge needle 47C from being adsorbed on the constituent member of the ion generation unit 44. It is desirable to adjust the air volume and the wind direction around the discharge needle 47C.

  The discharge port forming part 46 provided on the air delivery direction side of the ion generating part 44 is disposed so as to surround the periphery of the mount opening part 120 formed in a rectangular shape in plan view. That is, the discharge port forming portion 46 of the ionizer piping portion 44 is formed to be bent in a rectangular shape and disposed inside the mount opening 120.

  The discharge port forming portion 46 is formed with a discharge port 48 for discharging air containing ions toward the inside of the mount opening 120. The number of discharge ports 48 formed in the discharge port forming part 46 is arbitrary, but by forming a plurality of discharge ports 48, it becomes possible to uniformly distribute ions for removing static electricity in the vicinity of the mount opening 120. .

  Moreover, in this embodiment, the discharge port 48 of this discharge port formation part 46 is formed diagonally downward. Thereby, the air containing the ion discharged | emitted from the discharge port 48 comes to be efficiently supplied to the vicinity of the burn-in board BIB.

  As described above, according to the transport apparatus 10 for a semiconductor device according to the present embodiment, the ionizer 40 is provided, and the ion generation unit 44 of the ionizer 40 is installed in the vicinity of the mount opening 120, and the ion generation unit 44. The control unit 42 supplied air and power. For this reason, the static electricity removing ions generated by the ion generator 44 can be mixed into the air delivered from the control unit 42 and efficiently discharged to the mount opening 120. Therefore, ions for removing static electricity can be efficiently supplied to the burn-in board BIB, and static electricity generated in the semiconductor device DUT and the socket SKT can be effectively removed. In other words, static electricity can be effectively removed by concentrating ions for removing static electricity on the semiconductor device DUT and socket SKT where static electricity is likely to be generated.

  In addition, since the ion generation unit 44 that generates ions and the control unit 42 that controls the ion generation unit 44 can be arranged apart from each other, the degree of freedom of layout in the transfer device 10 of the semiconductor device can be greatly increased. it can.

[Second Embodiment]
In the second embodiment, the shape of the discharge port forming portion 46 in the first embodiment described above is changed. That is, in the first embodiment described above, since the discharge port forming portion 46 of the ionizer 40 is formed in a rectangular shape, the air flow is disturbed at the bent portion in the discharge port forming portion 46 and is generated by the ion generating portion 44. There is a risk that the ions will be neutralized. That is, the positive ions and the negative ions are neutralized by the turbulent flow in the pipe, and the air sent from the discharge port 48 provided at the tip of the discharge port forming unit 46 contains sufficient ions. There is also a fear of not. Therefore, in this embodiment, the discharge port forming portion 46 is formed in a linear shape, and the turbulent flow generated in the discharge port forming portion 46 is reduced as much as possible. Hereinafter, a different part from 1st Embodiment mentioned above is demonstrated.

  FIG. 7 is a plan view of the vicinity of the mount opening 120 in the transport apparatus 10 of the semiconductor device according to the second embodiment as viewed from above, and corresponds to FIG. 4 of the first embodiment described above. FIG. 8 is a partial cross-sectional view of the vicinity of the mount opening 120 in FIG. 4 and corresponds to FIG. 5 of the first embodiment described above.

As shown in FIGS. 7 and 8, the discharge port forming portion 46 of the ionizer 40 according to the present embodiment is formed linearly. That is, at least the discharge port forming portion 46 is not formed with a bent portion. For this reason, it is possible to avoid the occurrence of turbulent flow in the air containing the ions flowing in the discharge port forming part 46. A discharge port 48 for discharging the water is formed. That is, air containing ions is discharged from a position along one side of the mount opening 120 toward the opening direction of the mount opening 120. The number of discharge ports 48 formed in the discharge port forming part 46 is arbitrary, but by forming a plurality of discharge ports 48, it becomes possible to uniformly distribute ions for removing static electricity in the vicinity of the mount opening 120. .

  Moreover, in this embodiment, the discharge port 48 of this discharge port formation part 46 is formed diagonally downward. Thereby, the air containing the ion discharged | emitted from the discharge port 48 comes to be efficiently supplied to the vicinity of the burn-in board BIB.

  As described above, the transport device 10 of the semiconductor device according to the present embodiment also mixes static removal ions generated by the ion generation unit 44 into the air delivered from the control unit 42, and mounts the mount opening. 120 can be efficiently discharged. Therefore, ions for removing static electricity can be efficiently supplied to the burn-in board BIB, and static electricity generated in the semiconductor device DUT and the socket SKT can be effectively removed. In other words, static electricity can be effectively removed by concentrating ions for removing static electricity on the semiconductor device DUT and socket SKT where static electricity is likely to be generated.

  Further, since the discharge port forming portion 46 of the ionizer 40 is configured in a straight line shape, the air flow can be prevented from being disturbed in the discharge port forming portion 46, and the air flow is disturbed. It is possible to avoid harming as much as possible.

[Third Embodiment]
In the third embodiment, the discharge port forming portion 46 in the first embodiment described above is omitted, and the discharge port forming portion 46 is not provided in the ionizer 40. Hereinafter, a different part from 1st Embodiment mentioned above is demonstrated.

  FIG. 9 is a plan view of the vicinity of the mount opening 120 in the transport apparatus 10 of the semiconductor device according to the third embodiment as viewed from above, and corresponds to FIG. 4 of the first embodiment described above. FIG. 10 is a partial cross-sectional view of the vicinity of the mount opening 120 of FIG. 4 and corresponds to FIG. 5 of the first embodiment described above.

  As shown in FIGS. 9 and 10, the ionizer 40 according to the present embodiment is not provided with the discharge port forming portion 46. In other words, in the present embodiment, the opening of the piping on the air delivery direction side of the ion generation unit 44 constitutes the discharge port 130 for discharging the air containing ions.

  The discharge port 130 discharges air containing ions toward the inside of the mount opening 120. In the present embodiment, the discharge port 120 is formed so as to discharge air obliquely downward.

  In the present embodiment, the number of the discharge ports 130 is one, but since air is discharged toward the central portion of the mount opening 120, the air containing ions diffuses to the mount opening 120 as a whole and is uniformized. And supplied to the vicinity of the burn-in board BIB.

  As described above, the transport device 10 of the semiconductor device according to the present embodiment also mixes static removal ions generated by the ion generation unit 44 into the air delivered from the control unit 42, and mounts the mount opening. 120 can be efficiently discharged. Therefore, ions for removing static electricity can be efficiently supplied to the burn-in board BIB, and static electricity generated in the semiconductor device DUT and the socket SKT can be effectively removed. In other words, static electricity can be effectively removed by concentrating ions for removing static electricity on the semiconductor device DUT and socket SKT where static electricity is likely to be generated.

  In addition, since the discharge port forming part 46 is not provided on the air discharge direction side of the ion generating part 44, the air containing ions is kept in the air flow that continues from the air delivery piping part 47A to the ion generating part 44. It can be discharged to the mount opening 120. For this reason, it is possible to avoid ion neutralization as much as possible by disturbing the air flow.

  In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible. For example, in the above-described embodiment, the semiconductor device transfer apparatus 10 has described an example in which both the process of mounting the semiconductor device DUT on the burn-in board BIB and the process of removing the semiconductor device DUT from the burn-in board BIB have been described. The present invention can also be applied to a transfer device for a semiconductor device that performs only one of the processes.

  In the semiconductor device transfer apparatus 10 according to the above-described embodiment, the semiconductor device DUT is attached to and removed from the burn-in board BIB through one mount opening 120. However, the semiconductor device DUT is attached. And removal may be performed at different mount openings. For example, the transport substrate 110 may be provided with a first mount opening for mounting the semiconductor device DUT and a second mount opening for removing the semiconductor device DUT.

  In the semiconductor device transfer apparatus 10 according to the above-described embodiment, the two pickup devices 76 and 78 are used to mount and remove the semiconductor device DUT, but the number of pickup devices is arbitrary. For example, the semiconductor device DUT may be mounted on the burn-in board BIB with one pickup device, and the semiconductor device DUT may be removed from the burn-in board BIB with the one pickup device.

  In the above-described embodiment, the present invention has been described by taking the burn-in board BIB as an example of the mounting board for mounting the semiconductor device DUT. However, the mounting and removal of the semiconductor device DUT on the mounting board other than the burn-in board BIB is described. The present invention can also be applied to a transfer device of a semiconductor device that performs the above.

  In the above-described embodiment, the case where the semiconductor device transport device is an inserter / uninserter has been described as an example. However, the semiconductor device transport device includes an IC automatic insertion / removal device, an inserter / sorter, a loader / unloader. Various devices for transporting semiconductor devices, such as loaders, are included.

  In the above-described embodiment, one ion generation unit 44 is connected to one control unit 42. However, a plurality of ion generation units 44 are connected to one control unit 42, and one control unit 42 is connected to one control unit 42. It is also possible to control the plurality of ion generation units 44 at 42. In this case, the added ion generation unit 44 may be arranged so as to supply ions for removing static electricity to the semiconductor devices DUT arranged on the tray 20, for example.

The block diagram explaining the process which inserts a semiconductor device in a burn-in board in the conveyance apparatus of the semiconductor device which concerns on each embodiment of this invention. The block diagram explaining the process which removes a semiconductor device from a burn-in board with the conveyance apparatus of the semiconductor device which concerns on each embodiment of this invention. The block diagram explaining an example of the structure of the conveying apparatus of the semiconductor device which concerns on 1st Embodiment of this invention. The top view of the mount opening part vicinity in the conveying apparatus of the semiconductor device which concerns on 1st Embodiment of this invention. FIG. 5 is a partial cross-sectional view in FIG. 4. The expanded sectional view explaining the structure of the ion production | generation part of the ionizer in the transfer apparatus of the semiconductor device which concerns on 1st Embodiment of this invention. The top view of the mount opening part vicinity in the conveying apparatus of the semiconductor device which concerns on 2nd Embodiment of this invention. FIG. 8 is a partial cross-sectional view in FIG. 7. The top view of the mount opening part vicinity in the conveying apparatus of the semiconductor device which concerns on 3rd Embodiment of this invention. FIG. 10 is a partial cross-sectional view in FIG. 9.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Transfer device 20 of semiconductor device Tray 30 Mounting stand 40 Ionizer 42 Control unit 44 Ion generation part 46 Discharge port formation part 47A Air delivery piping part 47B Power supply line 47C Discharge needle 48 Discharge port 50 Cargo BIB Burn-in board CR Carrier rack

Claims (9)

A pick-up device for transporting the picked-up semiconductor device to the mounting board through the mount opening;
An ionizer for supplying static-removing ions to the mount opening, an ion generator for generating the static-removing ions, and an air delivery pipe for delivering air to the ion generator An ionizer that mixes the ions for removing static electricity generated by the ion generator into the air delivered from the air delivery pipe unit and sends out the ions from the ion generator,
A transport device for a semiconductor device, comprising:   The discharge port forming part in which the discharge port for discharging the air sent out from the above-mentioned ion generation part was formed is provided in the air sending direction side of the above-mentioned ion generation part. 2. A transfer device for a semiconductor device according to 1.   3. The transport apparatus for a semiconductor device according to claim 2, wherein the discharge port forming portion is disposed around the mount opening so as to match the shape of the mount opening.   The transport apparatus for a semiconductor device according to claim 2, wherein the discharge port forming portion is linearly arranged along one side of the mount opening.   The opening of the ion generation unit on the air delivery direction side of the ion generation unit is configured to function as a discharge port for discharging air mixed with ions for removing static electricity to the mount opening. The transport apparatus for a semiconductor device according to claim 1, wherein the transport apparatus is a semiconductor device.   The said discharge port is arrange | positioned so that the air sent out from the said ion production | generation part may be discharged | emitted toward the board for mounting, The Claim 2 thru | or 5 characterized by the above-mentioned. Semiconductor device transfer device.   7. The transport of a semiconductor device according to claim 1, wherein the pickup device performs a process of mounting the picked-up semiconductor device on a mounting board through the mount opening. apparatus.   8. The pickup device according to claim 1, wherein the pickup device performs a process of picking up and removing a semiconductor device mounted on a mounting board through the mount opening. Semiconductor device transfer device. A power line for supplying power to the ion generator;
The ion generation unit generates the static electricity removing ions by supplying power supplied from the power supply line to a discharge needle provided in the ion generation unit.
9. The transport apparatus for a semiconductor device according to claim 1, wherein the transport apparatus is a semiconductor device.

Images