JP2008270275A - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP2008270275A JP2008270275A JP2007107310A JP2007107310A JP2008270275A JP 2008270275 A JP2008270275 A JP 2008270275A JP 2007107310 A JP2007107310 A JP 2007107310A JP 2007107310 A JP2007107310 A JP 2007107310A JP 2008270275 A JP2008270275 A JP 2008270275A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 45
- 238000005253 cladding Methods 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 23
- 239000011777 magnesium Substances 0.000 description 31
- 229910002601 GaN Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01S5/00—Semiconductor lasers
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- H01S5/00—Semiconductor lasers
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- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
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- H01S5/00—Semiconductor lasers
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Abstract
利用に適した、窒化物系半導体からなる半導体レーザーや発光ダイオード等の発光素子を提供する事を目的とする。
【解決手段】p型コンタクト層28と、p型コンタクト層28の下層に形成されたp型中間層26と、p型中間層の下層に形成されたp型クラッド層24とを備える。p型コンタクト層28と前記p型中間層26間および、p型中間層26と前記p型クラッド層24間のバンドギャップ差がそれぞれ200meV以下となるように構成する。
【選択図】図2
Description
前述のp型コンタクト層の下層に形成されたp型中間層と、
前述のp型中間層の下層に形成されたp型クラッド層とを備え、
前述のp型コンタクト層と前述p型中間層および、前述のp型中間層と前述のp型クラッド層間のバンドギャップ差がそれぞれ200meV以下である事を特徴とする。
本実施形態の窒化物半導体発光素子の製造には、III族原料としてトリメチルガリウム(以後、TMGと称する)、トリメチルアルミニウム(以後、TMAと称する)、トリメチルインジウム(以後、TMIと称する)を使用する。V族原料としては、アンモニア(NH3)ガスを使用する。n型不純物原料にはモノシラン(以後、SiH4と称する)を用いる。p型不純物原料には、シクロペンタジエニルマグネシウム (以後、CP2Mgと称する)を用いる。これらの原料ガスのキャリアガスには水素(H2)ガス及び窒素(N2)ガスが用いられる。但し、上述した各原料は例示であって、これらに限定されない。
が施される。端面コーティングはレーザー素子の閾値電流密度を下げる等の目的のためになされる。次に、このバー状に形成されたものを劈開などによりチップ化する。本実施形態の窒化物半導体発光素子は上述した構成からなる。
Eg[eV]=(1-X)×(EGaN)+X×(EAlN)−b×X(1−X) ‥式1
ここに、
EGaN=GaNのバンドギャップ=3.39eV、
EAlN=AlNのバンドギャップ=6.2eV、
b(ボーイングパラメータ)=0.6である。
本実施形態の窒化物半導体発光素子は、第1バンドギャップ差及び第2バンドギャップ差を抑制するために、上述の式1と後述の考察に基づきp型クラッド層24、p型中間層26の組成を決定している。ここでp型クラッド層24、p型中間層26の組成は個別に定められるものであり、p型クラッド層24が用いるパラメータXとp型中間層26が用いるパラメータXは一致しない。
本実施形態はp型中間層にGaNを用い、動作電圧の低減を行った窒化物半導体発光素子に関する。本実施形態の窒化物半導体発光素子は図1で表される実施形態1の窒化物半導体発光素子と、p型中間層の組成が異なる点を除き同様である。本実施形態のp型中間層40の組成はGaNである。その膜厚は0.1μmである。図6には、本実施形態の窒化物半導体発光素子の組成等をまとめた表を示す。このような構成にする事により、p型中間層のMgのアクセプタ準位を低下させる事が出来るため高キャリア濃度が得られやすくなる。従ってキャリアの注入効率が増加する。その結果、動作電圧を低減できる。
26 p型中間層
28 p型コンタクト層
Claims (6)
- p型コンタクト層と、
前記p型コンタクト層の下層に形成されたp型中間層と、
前記p型中間層の下層に形成されたp型クラッド層と、
前記p型コンタクト層と前記p型中間層間および、前記p型中間層と前記p型クラッド層間のバンドギャップ差がそれぞれ200meV以下である事、
を特徴とする窒化物半導体発光素子。 - 前記p型コンタクト層はMgがドープされたInyAlzGa1-y-zN(0≦y、0≦z、y+z<1)であり、
前記p型中間層はMgがドープされた、Alx1Ga1-x1N(0≦x1≦1)であり、
前記p型クラッド層はMgがドープされた、Alx2Ga1-x2N(0≦x2≦1)である事、
を特徴とする請求項1に記載の窒化物半導体発光素子。 - 前記p型コンタクト層はGaNであり、
前記p型コンタクト層のMg濃度は1×1020cm-3〜1×1021cm-3である事、
を特徴とする請求項2に記載の窒化物半導体発光素子。 - 前記p型中間層のMg濃度が1×1018cm-3〜1×1019cm-3である事を特徴とする請求項2に記載の窒化物半導体発光素子。
- 前記p型中間層のMg濃度は、前記p型コンタクト層および前記p型クラッド層のMg濃度より低い事を特徴とする請求項2に記載の窒化物半導体発光素子。
- 前記p型中間層の組成がGaNである事を特徴とする請求項2に記載の窒化物半導体発光素子。
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JP2007107310A JP4261592B2 (ja) | 2007-04-16 | 2007-04-16 | 窒化物半導体発光素子 |
US11/936,846 US8263999B2 (en) | 2007-04-16 | 2007-11-08 | Nitride semiconductor light-emitting device |
TW097111833A TW200845436A (en) | 2007-04-16 | 2008-04-01 | Nitride semiconductor light-emitting device |
CN2008100926029A CN101290963B (zh) | 2007-04-16 | 2008-04-16 | 氮化物半导体发光元件 |
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JP2007107310A JP4261592B2 (ja) | 2007-04-16 | 2007-04-16 | 窒化物半導体発光素子 |
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US (1) | US8263999B2 (ja) |
JP (1) | JP4261592B2 (ja) |
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JP6178990B2 (ja) * | 2012-10-31 | 2017-08-16 | パナソニックIpマネジメント株式会社 | 半導体発光装置およびその製造方法 |
JP2014127708A (ja) * | 2012-12-27 | 2014-07-07 | Toshiba Corp | 半導体発光素子及び半導体発光素子の製造方法 |
CN105977358B (zh) * | 2016-05-17 | 2018-06-26 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制作方法 |
DE102018204163A1 (de) | 2018-03-19 | 2019-09-19 | Osram Opto Semiconductors Gmbh | Konversionselement für LED-Anwendungen mit hoher Leistung und hoher Farbwiedergabe |
CN110635007A (zh) * | 2019-09-12 | 2019-12-31 | 佛山市国星半导体技术有限公司 | 一种抗静电外延结构及其制备方法 |
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JP2666237B2 (ja) * | 1994-09-20 | 1997-10-22 | 豊田合成株式会社 | 3族窒化物半導体発光素子 |
EP1017113B1 (en) * | 1997-01-09 | 2012-08-22 | Nichia Corporation | Nitride semiconductor device |
JP3654738B2 (ja) | 1997-04-07 | 2005-06-02 | 豊田合成株式会社 | 3族窒化物半導体発光素子 |
JP4149054B2 (ja) | 1998-11-27 | 2008-09-10 | シャープ株式会社 | 半導体装置 |
US6838705B1 (en) * | 1999-03-29 | 2005-01-04 | Nichia Corporation | Nitride semiconductor device |
JP3656456B2 (ja) | 1999-04-21 | 2005-06-08 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP3813472B2 (ja) | 2000-07-10 | 2006-08-23 | 三洋電機株式会社 | 窒化物系半導体発光素子 |
US6914922B2 (en) * | 2000-07-10 | 2005-07-05 | Sanyo Electric Co., Ltd. | Nitride based semiconductor light emitting device and nitride based semiconductor laser device |
KR100906760B1 (ko) * | 2001-03-28 | 2009-07-09 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자 |
US6649942B2 (en) * | 2001-05-23 | 2003-11-18 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
JP2003046127A (ja) | 2001-05-23 | 2003-02-14 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子 |
US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
JP4111696B2 (ja) | 2001-08-08 | 2008-07-02 | 三洋電機株式会社 | 窒化物系半導体レーザ素子 |
JP2003347658A (ja) | 2002-05-24 | 2003-12-05 | Mitsubishi Electric Corp | 半導体発光素子およびその製造方法 |
CN1993835A (zh) | 2004-06-14 | 2007-07-04 | 三菱电线工业株式会社 | 氮化物半导体发光器件 |
CN100592589C (zh) * | 2004-11-10 | 2010-02-24 | 三菱电机株式会社 | 半导体发光元件 |
JP4660333B2 (ja) | 2005-09-30 | 2011-03-30 | 三洋電機株式会社 | 窒化物系半導体レーザ素子 |
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CN101290963B (zh) | 2010-06-23 |
TW200845436A (en) | 2008-11-16 |
US8263999B2 (en) | 2012-09-11 |
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US20080251804A1 (en) | 2008-10-16 |
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