JP2008244124A5 - - Google Patents
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- Publication number
- JP2008244124A5 JP2008244124A5 JP2007082332A JP2007082332A JP2008244124A5 JP 2008244124 A5 JP2008244124 A5 JP 2008244124A5 JP 2007082332 A JP2007082332 A JP 2007082332A JP 2007082332 A JP2007082332 A JP 2007082332A JP 2008244124 A5 JP2008244124 A5 JP 2008244124A5
- Authority
- JP
- Japan
- Prior art keywords
- source
- resistance element
- forming
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000012535 impurity Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 6
- 229920005591 polysilicon Polymers 0.000 claims 6
- 238000009792 diffusion process Methods 0.000 claims 4
- 238000002513 implantation Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 230000003213 activating Effects 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- -1 arsenic ions Chemical class 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052803 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 230000002265 prevention Effects 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007082332A JP5162935B2 (ja) | 2007-03-27 | 2007-03-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007082332A JP5162935B2 (ja) | 2007-03-27 | 2007-03-27 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008244124A JP2008244124A (ja) | 2008-10-09 |
| JP2008244124A5 true JP2008244124A5 (zh) | 2010-01-21 |
| JP5162935B2 JP5162935B2 (ja) | 2013-03-13 |
Family
ID=39915101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007082332A Expired - Fee Related JP5162935B2 (ja) | 2007-03-27 | 2007-03-27 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5162935B2 (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5354160B2 (ja) * | 2008-10-16 | 2013-11-27 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP5601026B2 (ja) | 2010-05-21 | 2014-10-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP5850671B2 (ja) * | 2011-08-15 | 2016-02-03 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05275619A (ja) * | 1992-03-24 | 1993-10-22 | Sony Corp | 半導体装置の製造方法 |
| JP2000031295A (ja) * | 1998-07-13 | 2000-01-28 | Toshiba Corp | 半導体集積回路及びその製造方法 |
| JP2003086701A (ja) * | 2001-09-14 | 2003-03-20 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
| JP4786126B2 (ja) * | 2003-06-04 | 2011-10-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2005259997A (ja) * | 2004-03-11 | 2005-09-22 | Nippon Precision Circuits Inc | 半導体装置及びその製造方法 |
-
2007
- 2007-03-27 JP JP2007082332A patent/JP5162935B2/ja not_active Expired - Fee Related
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