JP2008235875A5 - - Google Patents
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- Publication number
- JP2008235875A5 JP2008235875A5 JP2008033063A JP2008033063A JP2008235875A5 JP 2008235875 A5 JP2008235875 A5 JP 2008235875A5 JP 2008033063 A JP2008033063 A JP 2008033063A JP 2008033063 A JP2008033063 A JP 2008033063A JP 2008235875 A5 JP2008235875 A5 JP 2008235875A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- manufacturing
- light absorption
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 230000031700 light absorption Effects 0.000 claims 6
- 229910052732 germanium Inorganic materials 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008033063A JP5433154B2 (ja) | 2007-02-23 | 2008-02-14 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007044044 | 2007-02-23 | ||
| JP2007044044 | 2007-02-23 | ||
| JP2008033063A JP5433154B2 (ja) | 2007-02-23 | 2008-02-14 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008235875A JP2008235875A (ja) | 2008-10-02 |
| JP2008235875A5 true JP2008235875A5 (OSRAM) | 2011-03-10 |
| JP5433154B2 JP5433154B2 (ja) | 2014-03-05 |
Family
ID=39716379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008033063A Expired - Fee Related JP5433154B2 (ja) | 2007-02-23 | 2008-02-14 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7638378B2 (OSRAM) |
| JP (1) | JP5433154B2 (OSRAM) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100037820A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor Deposition Reactor |
| US8475591B2 (en) * | 2008-08-15 | 2013-07-02 | Varian Semiconductor Equipment Associates, Inc. | Method of controlling a thickness of a sheet formed from a melt |
| KR101172147B1 (ko) | 2009-02-23 | 2012-08-07 | 시너스 테크놀리지, 인코포레이티드 | 플라즈마에 의한 라디칼을 이용한 박막 형성 방법 |
| JP5969216B2 (ja) * | 2011-02-11 | 2016-08-17 | 株式会社半導体エネルギー研究所 | 発光素子、表示装置、照明装置、及びこれらの作製方法 |
| US8877300B2 (en) * | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
| US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
| KR20130017312A (ko) * | 2011-08-10 | 2013-02-20 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN104253026A (zh) * | 2013-06-27 | 2014-12-31 | 上海和辉光电有限公司 | 制备多晶硅层的方法 |
| KR20150040065A (ko) * | 2013-10-04 | 2015-04-14 | 삼성디스플레이 주식회사 | 상변화 표시장치 |
| KR20160053001A (ko) * | 2014-10-30 | 2016-05-13 | 삼성디스플레이 주식회사 | 투명 표시 기판, 투명 표시 장치 및 투명 표시 장치의 제조 방법 |
| US9766763B2 (en) | 2014-12-26 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, light-emitting panel, display panel, and sensor panel |
| KR102410594B1 (ko) * | 2015-04-30 | 2022-06-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 구비하는 표시 패널 |
| US11791159B2 (en) | 2019-01-17 | 2023-10-17 | Ramesh kumar Harjivan Kakkad | Method of fabricating thin, crystalline silicon film and thin film transistors |
| US11562903B2 (en) * | 2019-01-17 | 2023-01-24 | Ramesh kumar Harjivan Kakkad | Method of fabricating thin, crystalline silicon film and thin film transistors |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6480017A (en) * | 1987-09-21 | 1989-03-24 | Agency Ind Science Techn | Manufacture of semiconductor single crystal layer |
| JP2872425B2 (ja) | 1990-03-24 | 1999-03-17 | キヤノン株式会社 | 半導体デバイスの形成方法 |
| EP0449524B1 (en) | 1990-03-24 | 1997-05-28 | Canon Kabushiki Kaisha | Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer |
| JPH07106246A (ja) * | 1993-09-30 | 1995-04-21 | Kyocera Corp | 多結晶シリコン薄膜の形成方法 |
| JP2002050764A (ja) * | 2000-08-02 | 2002-02-15 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、アレイ基板、液晶表示装置、有機ｅｌ表示装置およびその製造方法 |
| JP2003178979A (ja) | 2001-08-30 | 2003-06-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| TWI282126B (en) | 2001-08-30 | 2007-06-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
| JP2003168646A (ja) * | 2001-12-04 | 2003-06-13 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP2004134773A (ja) | 2002-09-18 | 2004-04-30 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| TWI253179B (en) | 2002-09-18 | 2006-04-11 | Sanyo Electric Co | Method for making a semiconductor device |
| JP4577114B2 (ja) * | 2005-06-23 | 2010-11-10 | ソニー株式会社 | 薄膜トランジスタの製造方法および表示装置の製造方法 |
| WO2007046290A1 (en) | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8278739B2 (en) | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
-
2008
- 2008-02-14 JP JP2008033063A patent/JP5433154B2/ja not_active Expired - Fee Related
- 2008-02-19 US US12/033,637 patent/US7638378B2/en not_active Expired - Fee Related
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