JP2008219237A - バルク音響振動子 - Google Patents
バルク音響振動子 Download PDFInfo
- Publication number
- JP2008219237A JP2008219237A JP2007051232A JP2007051232A JP2008219237A JP 2008219237 A JP2008219237 A JP 2008219237A JP 2007051232 A JP2007051232 A JP 2007051232A JP 2007051232 A JP2007051232 A JP 2007051232A JP 2008219237 A JP2008219237 A JP 2008219237A
- Authority
- JP
- Japan
- Prior art keywords
- temperature compensation
- compensation film
- film
- bulk acoustic
- planar region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005484 gravity Effects 0.000 claims description 29
- 238000009826 distribution Methods 0.000 claims description 10
- 239000010408 film Substances 0.000 description 328
- 230000007850 degeneration Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 230000007423 decrease Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- -1 TeO 5 Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007051232A JP2008219237A (ja) | 2007-03-01 | 2007-03-01 | バルク音響振動子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007051232A JP2008219237A (ja) | 2007-03-01 | 2007-03-01 | バルク音響振動子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008219237A true JP2008219237A (ja) | 2008-09-18 |
| JP2008219237A5 JP2008219237A5 (enExample) | 2010-04-08 |
Family
ID=39838788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007051232A Withdrawn JP2008219237A (ja) | 2007-03-01 | 2007-03-01 | バルク音響振動子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008219237A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895269A (zh) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | 一种压电薄膜体声波谐振器的制备方法 |
| CN102577118A (zh) * | 2009-09-28 | 2012-07-11 | Vtt技术研究中心 | 微机械谐振器 |
| JP2012156907A (ja) * | 2011-01-27 | 2012-08-16 | Murata Mfg Co Ltd | 圧電デバイス |
| US20140191825A1 (en) * | 2013-01-09 | 2014-07-10 | Samsung Electronics Co., Ltd. | Radio frequency filter and manufacturing method thereof |
| US20150130559A1 (en) * | 2013-11-11 | 2015-05-14 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator, filter and duplexer |
| US9344059B2 (en) | 2013-01-28 | 2016-05-17 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator, filter, and duplexer including a film inserted into the piezoelectric film |
| US20160164489A1 (en) * | 2014-12-08 | 2016-06-09 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator and filter |
| US9787282B2 (en) | 2013-11-11 | 2017-10-10 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator, filter and duplexer |
| WO2024044874A1 (zh) * | 2022-08-29 | 2024-03-07 | 北京京东方技术开发有限公司 | 体声波谐振器及其制备方法、电子设备 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000332570A (ja) * | 1999-05-24 | 2000-11-30 | Kyocera Corp | 圧電共振子 |
| JP2002237738A (ja) * | 2000-12-06 | 2002-08-23 | Murata Mfg Co Ltd | 圧電共振子、圧電フィルタおよびデュプレクサ |
| JP2005159402A (ja) * | 2003-11-20 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 音響共振器 |
| JP2005223808A (ja) * | 2004-02-09 | 2005-08-18 | Murata Mfg Co Ltd | 圧電薄膜フィルタ、分波器、通信機 |
| JP2007028594A (ja) * | 2005-06-17 | 2007-02-01 | Matsushita Electric Ind Co Ltd | 多重モード薄膜弾性波共振器フィルタ、並びにそれを備える、ラダー型フィルタ、共用器、及び通信機器 |
-
2007
- 2007-03-01 JP JP2007051232A patent/JP2008219237A/ja not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000332570A (ja) * | 1999-05-24 | 2000-11-30 | Kyocera Corp | 圧電共振子 |
| JP2002237738A (ja) * | 2000-12-06 | 2002-08-23 | Murata Mfg Co Ltd | 圧電共振子、圧電フィルタおよびデュプレクサ |
| JP2005159402A (ja) * | 2003-11-20 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 音響共振器 |
| JP2005223808A (ja) * | 2004-02-09 | 2005-08-18 | Murata Mfg Co Ltd | 圧電薄膜フィルタ、分波器、通信機 |
| JP2007028594A (ja) * | 2005-06-17 | 2007-02-01 | Matsushita Electric Ind Co Ltd | 多重モード薄膜弾性波共振器フィルタ、並びにそれを備える、ラダー型フィルタ、共用器、及び通信機器 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102577118A (zh) * | 2009-09-28 | 2012-07-11 | Vtt技术研究中心 | 微机械谐振器 |
| JP2013506334A (ja) * | 2009-09-28 | 2013-02-21 | テクノロギアン トゥトキムスケスクス ヴェーテーテー | マイクロメカニカル共振器 |
| CN102577118B (zh) * | 2009-09-28 | 2016-03-16 | 芬兰国家技术研究中心股份公司 | 微机械谐振器 |
| CN101895269B (zh) * | 2010-07-30 | 2012-09-05 | 中国科学院声学研究所 | 一种压电薄膜体声波谐振器的制备方法 |
| CN101895269A (zh) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | 一种压电薄膜体声波谐振器的制备方法 |
| JP2012156907A (ja) * | 2011-01-27 | 2012-08-16 | Murata Mfg Co Ltd | 圧電デバイス |
| US9954511B2 (en) * | 2013-01-09 | 2018-04-24 | Samsung Electronics Co., Ltd. | Radio frequency filter and manufacturing method thereof |
| US20140191825A1 (en) * | 2013-01-09 | 2014-07-10 | Samsung Electronics Co., Ltd. | Radio frequency filter and manufacturing method thereof |
| US9344059B2 (en) | 2013-01-28 | 2016-05-17 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator, filter, and duplexer including a film inserted into the piezoelectric film |
| US20150130559A1 (en) * | 2013-11-11 | 2015-05-14 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator, filter and duplexer |
| US9787282B2 (en) | 2013-11-11 | 2017-10-10 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator, filter and duplexer |
| US9356573B2 (en) * | 2013-11-11 | 2016-05-31 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator, filter and duplexer including a film inserted in the piezoelectric film |
| US20160164489A1 (en) * | 2014-12-08 | 2016-06-09 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator and filter |
| US10110197B2 (en) * | 2014-12-08 | 2018-10-23 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator and filter |
| WO2024044874A1 (zh) * | 2022-08-29 | 2024-03-07 | 北京京东方技术开发有限公司 | 体声波谐振器及其制备方法、电子设备 |
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