JP2008193086A5 - - Google Patents

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Publication number
JP2008193086A5
JP2008193086A5 JP2008020227A JP2008020227A JP2008193086A5 JP 2008193086 A5 JP2008193086 A5 JP 2008193086A5 JP 2008020227 A JP2008020227 A JP 2008020227A JP 2008020227 A JP2008020227 A JP 2008020227A JP 2008193086 A5 JP2008193086 A5 JP 2008193086A5
Authority
JP
Japan
Prior art keywords
optically active
active layer
coupling member
semiconductor component
cooling medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008020227A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008193086A (ja
JP5209981B2 (ja
Filing date
Publication date
Priority claimed from DE102007017113A external-priority patent/DE102007017113A1/de
Application filed filed Critical
Publication of JP2008193086A publication Critical patent/JP2008193086A/ja
Publication of JP2008193086A5 publication Critical patent/JP2008193086A5/ja
Application granted granted Critical
Publication of JP5209981B2 publication Critical patent/JP5209981B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008020227A 2007-01-31 2008-01-31 光学活性層を有する半導体構成素子、多数の光学活性層を有する装置および半導体構成素子の製造方法 Expired - Fee Related JP5209981B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007004805 2007-01-31
DE102007004805.1 2007-01-31
DE102007017113A DE102007017113A1 (de) 2007-01-31 2007-04-11 Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007017113.9 2007-04-11

Publications (3)

Publication Number Publication Date
JP2008193086A JP2008193086A (ja) 2008-08-21
JP2008193086A5 true JP2008193086A5 (OSRAM) 2011-06-23
JP5209981B2 JP5209981B2 (ja) 2013-06-12

Family

ID=39587421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008020227A Expired - Fee Related JP5209981B2 (ja) 2007-01-31 2008-01-31 光学活性層を有する半導体構成素子、多数の光学活性層を有する装置および半導体構成素子の製造方法

Country Status (3)

Country Link
US (1) US8564007B2 (OSRAM)
JP (1) JP5209981B2 (OSRAM)
DE (1) DE102007017113A1 (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007041896A1 (de) 2007-09-04 2009-03-05 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102008013030A1 (de) 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008008599A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Halbleiteranordnung, insbesondere Leuchtdiodenanordnung und Leuchtmittelanordnung
DE102008039147A1 (de) * 2008-05-30 2009-12-03 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und optoelektronische Anordnung
US8008845B2 (en) * 2008-10-24 2011-08-30 Cree, Inc. Lighting device which includes one or more solid state light emitting device
EP2270882A1 (en) * 2009-06-30 2011-01-05 Koninklijke Philips Electronics N.V. Light emitting diode circuit for ambient light
WO2011055659A1 (ja) * 2009-11-05 2011-05-12 株式会社エルム 大型ｌｅｄ照明装置
CN101846256A (zh) * 2010-05-04 2010-09-29 蔡州 Led光源
US8179676B2 (en) 2010-07-21 2012-05-15 Telefonaktiebolaget L M Ericsson (Publ) Optical interconnects in cooling substrates
US8217557B2 (en) 2010-08-31 2012-07-10 Micron Technology, Inc. Solid state lights with thermosiphon liquid cooling structures and methods
TWI506813B (zh) * 2013-04-09 2015-11-01 東貝光電科技股份有限公司 Single crystal dual light source light emitting element
PL3011608T3 (pl) * 2013-06-20 2017-09-29 Philips Lighting Holding B.V. Urządzenie emitujące światło
CN103996664B (zh) * 2014-05-30 2016-08-24 佐志温控技术（上海）有限公司 一种防反二极管的液体强制冷却装置
CN106287329A (zh) * 2015-06-04 2017-01-04 国立中央大学 液冷式高功率led投射灯
US20170030567A1 (en) * 2015-07-27 2017-02-02 Univ Nat Central Liquid-cool light emitting diodes light
JP6740654B2 (ja) * 2016-03-18 2020-08-19 日亜化学工業株式会社 光源装置
US10388810B1 (en) 2018-06-25 2019-08-20 Toyota Motor Engineering & Manufacturing North America, Inc. Power electronics assemblies having opticondistors and an embedded active cooling chip

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1519635A (fr) * 1966-12-28 1968-04-05 Radiotechnique Coprim Rtc Perfectionnement aux dispositifs semi-conducteurs électroluminescents
US5836876A (en) * 1993-03-03 1998-11-17 Washington University Method and apparatus for determining bone density and diagnosing osteoporosis
FR2739983A1 (fr) * 1995-10-13 1997-04-18 Thomson Csf Semiconducteurs Laser a semiconducteur de forte puissance
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
CN1297016C (zh) 1997-01-09 2007-01-24 日亚化学工业株式会社 氮化物半导体元器件
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6480515B1 (en) * 2000-12-15 2002-11-12 Xerox Corporation Optically transparent, heat conductive fluid heat sink
DE10117889A1 (de) 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
DE10239048B4 (de) * 2001-08-30 2006-11-16 Siemens Ag Integrierter Schaltkreis
EP1551329A4 (en) * 2002-07-25 2006-08-16 Jonathan S Dahm METHOD AND DEVICE FOR USE OF LUMINOUS DIODE FOR HARDENING
DE20219869U1 (de) * 2002-12-21 2003-05-15 Ming, Fuh Lih, Tali, Taichung Leuchtdiode
TW565975B (en) * 2002-12-27 2003-12-11 Ind Tech Res Inst Oxide confined type vertical cavity surface emitting laser device and the manufacturing method thereof
JP2004265986A (ja) * 2003-02-28 2004-09-24 Citizen Electronics Co Ltd 高輝度発光素子及びそれを用いた発光装置及び高輝度発光素子の製造方法
JP2005005483A (ja) * 2003-06-12 2005-01-06 Citizen Electronics Co Ltd 高輝度発光素子
US7016383B2 (en) * 2003-08-27 2006-03-21 Northrop Grumman Corporation Immersion-cooled monolithic laser diode array and method of manufacturing the same
JP2005294185A (ja) 2004-04-05 2005-10-20 Nichia Chem Ind Ltd 発光装置
KR20060107823A (ko) * 2003-11-28 2006-10-16 오스람 옵토 세미컨덕터스 게엠베하 최적의 열적 시간 상수를 갖는 펄스 레이저 다이오드 바를위한 히트 싱크
DE102004004097A1 (de) * 2003-11-28 2005-06-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer Wärmesenke
JP2005243658A (ja) * 2003-12-25 2005-09-08 Ngk Spark Plug Co Ltd 発光ダイオードパッケージ
EP1754259B1 (en) * 2004-03-18 2019-07-17 Phoseon Technology, Inc. Direct and indirect cooling of leds
DE102004047324A1 (de) * 2004-09-29 2006-04-13 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP2006237071A (ja) 2005-02-22 2006-09-07 Toyoda Gosei Co Ltd 発光素子およびこれを用いた表示装置
EP1703121A1 (en) 2005-02-24 2006-09-20 Siemens VDO Automotive S.p.A. Clip and fuel injector assembly
KR101240999B1 (ko) * 2005-04-27 2013-03-08 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 발광 반도체 장치용 냉각 장치 및 그러한 냉각 장치의 제조방법
DE102005055293A1 (de) 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
DE102007004301A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements und Dünnfilm-Halbleiterbauelement
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund

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