JP2008182283A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2008182283A JP2008182283A JP2008110742A JP2008110742A JP2008182283A JP 2008182283 A JP2008182283 A JP 2008182283A JP 2008110742 A JP2008110742 A JP 2008110742A JP 2008110742 A JP2008110742 A JP 2008110742A JP 2008182283 A JP2008182283 A JP 2008182283A
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- JP
- Japan
- Prior art keywords
- substrate
- protruding electrode
- bonding surface
- electrode
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
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- Wire Bonding (AREA)
Abstract
【解決手段】半導体装置1は、フィルム基板8に実装されてシリコンにより構成されたインタポーザ基板2と、液晶を駆動するためにインタポーザ基板2に実装された半導体素子3とを備え、インタポーザ基板2は、半導体素子3側に形成された基板突起電極4を有し、半導体素子3は、基板突起電極4と接合する素子突起電極5を有し、素子突起電極5の素子接合面の面積が、基板突起電極4の基板接合面の面積よりも大きい。
【選択図】図1
Description
2 インターポーザ基板
3 半導体素子
4 基板突起電極
5 素子突起電極
6 基板接合面
7 素子接合面
8 フィルム基板
9 封止樹脂
10 突起電極
11 配線パターン
12 孔
Claims (2)
- 実装基板に実装されて半導体により構成されたインタポーザ基板と、前記インタポーザ基板に実装された半導体素子とを備え、前記インタポーザ基板は、前記半導体素子側に形成された基板突起電極を有し、前記半導体素子は、前記基板突起電極と接合する端子を有することを特徴とする半導体装置。
- 前記端子は、アルミニウムによって構成され、
前記基板突起電極は、金によって構成される請求項1記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008110742A JP4750149B2 (ja) | 2008-04-21 | 2008-04-21 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008110742A JP4750149B2 (ja) | 2008-04-21 | 2008-04-21 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006339048A Division JP4376893B2 (ja) | 2006-12-15 | 2006-12-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008182283A true JP2008182283A (ja) | 2008-08-07 |
JP4750149B2 JP4750149B2 (ja) | 2011-08-17 |
Family
ID=39725877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008110742A Expired - Fee Related JP4750149B2 (ja) | 2008-04-21 | 2008-04-21 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4750149B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110020735A (ko) * | 2009-08-24 | 2011-03-03 | 소니 주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169875A (ja) * | 1993-03-11 | 1995-07-04 | Toshiba Corp | 電子回路装置及びその製造方法及び回路基板及び液晶表示装置及びサーマルヘッド及びプリンタ |
JP2002208613A (ja) * | 2001-01-12 | 2002-07-26 | Nec Kansai Ltd | 半導体装置 |
JP2004207566A (ja) * | 2002-12-26 | 2004-07-22 | Seiko Instruments Inc | 半導体装置、表示装置、及び、その製造方法 |
-
2008
- 2008-04-21 JP JP2008110742A patent/JP4750149B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169875A (ja) * | 1993-03-11 | 1995-07-04 | Toshiba Corp | 電子回路装置及びその製造方法及び回路基板及び液晶表示装置及びサーマルヘッド及びプリンタ |
JP2002208613A (ja) * | 2001-01-12 | 2002-07-26 | Nec Kansai Ltd | 半導体装置 |
JP2004207566A (ja) * | 2002-12-26 | 2004-07-22 | Seiko Instruments Inc | 半導体装置、表示装置、及び、その製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110020735A (ko) * | 2009-08-24 | 2011-03-03 | 소니 주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
JP2011044655A (ja) * | 2009-08-24 | 2011-03-03 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
US8742585B2 (en) | 2009-08-24 | 2014-06-03 | Sony Corporation | Semiconductor device having a plurality of pads of low diffusible material formed in a substrate |
KR101644655B1 (ko) * | 2009-08-24 | 2016-08-01 | 소니 주식회사 | 반도체 장치 |
US9679937B2 (en) | 2009-08-24 | 2017-06-13 | Sony Corporation | Semiconductor device and method for production of semiconductor device |
US11715752B2 (en) | 2009-08-24 | 2023-08-01 | Sony Group Corporation | Semiconductor device and method for production of semiconductor device |
Also Published As
Publication number | Publication date |
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JP4750149B2 (ja) | 2011-08-17 |
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