JP2008172279A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2008172279A JP2008172279A JP2008097001A JP2008097001A JP2008172279A JP 2008172279 A JP2008172279 A JP 2008172279A JP 2008097001 A JP2008097001 A JP 2008097001A JP 2008097001 A JP2008097001 A JP 2008097001A JP 2008172279 A JP2008172279 A JP 2008172279A
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- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 67
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000013078 crystal Substances 0.000 claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 238000002161 passivation Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 20
- 230000000694 effects Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
【課題】 裏面パッシベーション膜として形成する窒化シリコン膜の形成形態を、裏面金属電極層表面での反射光とシリコン単結晶基板/窒化シリコン膜境界での反射光との干渉を考慮に入れて工夫することにより、より高効率の太陽電池を具現する。
【解決手段】 太陽電池1の裏面構造において、シリコン単結晶基板3の裏面MPPと受光面MPSとのいずれにも{111}面を主体とするテクスチャが形成されていない場合、裏面側の窒化シリコン膜4の膜厚を40nm〜220nmとする。また、受光面MPS側にのみテクスチャ形成される場合、裏面側の窒化シリコン膜4の膜厚を100nm〜300nmとする。さらに、裏面MPPと受光面MPSとのいずれにもテクスチャ形成される場合、裏面側の窒化シリコン膜4の膜厚を40nm〜230nmとする。
【選択図】 図1
Description
結晶主軸方向が<100>であり、かつ、第一主表面と第二主表面とのいずれにも{111}面を主体とするテクスチャが形成されていないシリコン単結晶基板の、第二主表面を受光面とし、他方、裏面側となる第一主表面に、窒化シリコン膜が40〜220nmの厚さにて形成され、さらに、該窒化シリコン膜を覆う形で裏面金属電極層が形成されてなることを特徴とする。
θ=γ ‥‥(1)
であり、屈折の法則(いわゆるスネルの法則)は、
sinθ/sinβ=n2/n1 ‥‥(2)
である。なお、境界を挟んで光の入射側にある媒質(この場合、シリコン単結晶)を媒質1、透過側にある媒質(この場合、窒化シリコン)を媒質2として、n1及びn2は、媒質1及び媒質2の屈折率である。シリコン単結晶の屈折率n1は3.52を採用し、窒化シリコンの屈折率n2は2.00を採用する。
厚さ150μmの、ホウ素をドーパントとしたp型シリコン単結晶基板(結晶主軸方向<100>:切断上がり状態:比抵抗1Ω・cm)を2枚、水酸化カリウム水溶液に浸漬し、両面にテクスチャを形成した。次に、第一主表面(裏面)上に、窒化シリコン膜を各々150、300nm成膜後、市販のダイサーを用いて、コンタクト貫通部としての平行溝を形成した。この上に全面にアルミを堆積して裏面金属電極層とした。他方、第二主表面(受光面)には、前記の方法により、エミッタ層、反射防止膜、フィンガー電極、バスバー電極を順次形成し、太陽電池試験品を作製した。
両面にテクスチャを有しないシリコン単結晶基板を用いた以外は、実施例1と全く同様に作製した太陽電池試験品を用意し、同様の測定を行なった。結果を表2に示す。
MPP 第一主表面
MPS 第二主表面
4 窒化シリコン膜
5 裏面金属電極層
Claims (3)
- 結晶主軸方向が<100>であり、かつ、第一主表面と第二主表面とのいずれにも{111}面を主体とするテクスチャが形成されていないシリコン単結晶基板の、前記第二主表面を受光面とし、他方、裏面側となる前記第一主表面に窒化シリコン膜が形成され、さらに、該窒化シリコン膜を覆う形で裏面金属電極層が形成され、
前記窒化シリコン膜は、前記裏面金属電極層で反射する金属面反射光と、前記シリコン単結晶基板と前記窒化シリコン膜との境界で反射する境界反射光とが干渉により互いに強め合うよう、40〜220nm(ただし、50〜100nmを除く)の厚さにて形成されてなることを特徴とする太陽電池。 - 結晶主軸方向が<100>であり、かつ、第一主表面には{111}面を主体とするテクスチャが形成されず、第二主表面には前記テクスチャの形成されたシリコン単結晶基板の、前記第二主表面を受光面とし、他方、裏面側となる前記第一主表面に窒化シリコン膜が形成され、さらに、該窒化シリコン膜を覆う形で裏面金属電極層が形成され、
前記窒化シリコン膜は、前記裏面金属電極層で反射する金属面反射光と、前記シリコン単結晶基板と前記窒化シリコン膜との境界で反射する境界反射光とが干渉により互いに強め合うよう、100nm〜300nm(ただし、200nmを除く)の厚さにて形成されてなることを特徴とする太陽電池。 - 結晶主軸方向が<100>であり、かつ、第一主表面と第二主表面とのいずれにも{111}面を主体とするテクスチャが形成されたシリコン単結晶基板の、前記第二主表面を受光面とし、他方、裏面側となる前記第一主表面に窒化シリコン膜が形成され、さらに、該窒化シリコン膜を覆う形で裏面金属電極層が形成され、
前記窒化シリコン膜は、前記裏面金属電極層で反射する金属面反射光と、前記シリコン単結晶基板と前記窒化シリコン膜との境界で反射する境界反射光とが干渉により互いに強め合うよう、40nm〜230nmの厚さにて形成されてなることを特徴とする太陽電池。
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011002130A1 (en) * | 2009-06-29 | 2011-01-06 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
KR101085382B1 (ko) | 2009-11-30 | 2011-11-21 | 주식회사 테스 | 선택적 에미터를 포함하는 태양 전지 제조 방법 |
JP2012502498A (ja) * | 2008-09-12 | 2012-01-26 | エルジー・ケム・リミテッド | 電力損失を最少に抑えた太陽電池用前面電極及びそれを含む太陽電池 |
WO2012039388A1 (ja) | 2010-09-21 | 2012-03-29 | 株式会社ピーアイ技術研究所 | 太陽電池の裏面反射層形成用ポリイミド樹脂組成物及びそれを用いた太陽電池の裏面反射層形成方法 |
CN102804392A (zh) * | 2009-06-22 | 2012-11-28 | 国际商业机器公司 | 半导体光学检测器结构 |
US9397242B2 (en) | 2011-03-30 | 2016-07-19 | Panasonic Intellectual Property Management Co., Ltd. | Silicon substrate having textured surface, and process for producing same |
KR20200053655A (ko) * | 2009-09-18 | 2020-05-18 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 태양전지, 그 제조방법 및 태양전지 모듈 |
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2008
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