JP2008172266A5 - - Google Patents

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Publication number
JP2008172266A5
JP2008172266A5 JP2008042175A JP2008042175A JP2008172266A5 JP 2008172266 A5 JP2008172266 A5 JP 2008172266A5 JP 2008042175 A JP2008042175 A JP 2008042175A JP 2008042175 A JP2008042175 A JP 2008042175A JP 2008172266 A5 JP2008172266 A5 JP 2008172266A5
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JP
Japan
Prior art keywords
substrate
forming
layer
ferromagnetic layer
manufacturing
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Application number
JP2008042175A
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English (en)
Japanese (ja)
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JP4679595B2 (ja
JP2008172266A (ja
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Priority to JP2008042175A priority Critical patent/JP4679595B2/ja
Priority claimed from JP2008042175A external-priority patent/JP4679595B2/ja
Publication of JP2008172266A publication Critical patent/JP2008172266A/ja
Publication of JP2008172266A5 publication Critical patent/JP2008172266A5/ja
Application granted granted Critical
Publication of JP4679595B2 publication Critical patent/JP4679595B2/ja
Active legal-status Critical Current
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JP2008042175A 2006-03-03 2008-02-22 磁気抵抗効果素子の製造方法及び製造装置 Active JP4679595B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008042175A JP4679595B2 (ja) 2006-03-03 2008-02-22 磁気抵抗効果素子の製造方法及び製造装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006058748 2006-03-03
JP2008042175A JP4679595B2 (ja) 2006-03-03 2008-02-22 磁気抵抗効果素子の製造方法及び製造装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007034686A Division JP4782037B2 (ja) 2006-03-03 2007-02-15 磁気抵抗効果素子の製造方法及び製造装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008260231A Division JP5260225B2 (ja) 2006-03-03 2008-10-07 磁気抵抗効果素子の製造方法

Publications (3)

Publication Number Publication Date
JP2008172266A JP2008172266A (ja) 2008-07-24
JP2008172266A5 true JP2008172266A5 (fr) 2008-11-27
JP4679595B2 JP4679595B2 (ja) 2011-04-27

Family

ID=39699993

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008042175A Active JP4679595B2 (ja) 2006-03-03 2008-02-22 磁気抵抗効果素子の製造方法及び製造装置
JP2008260231A Active JP5260225B2 (ja) 2006-03-03 2008-10-07 磁気抵抗効果素子の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008260231A Active JP5260225B2 (ja) 2006-03-03 2008-10-07 磁気抵抗効果素子の製造方法

Country Status (2)

Country Link
JP (2) JP4679595B2 (fr)
CN (2) CN101395732A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2530182B1 (fr) * 2010-01-26 2015-03-25 Canon Anelva Corporation Procédé ainsi que dispositif de formation de film, et dispositif de commande dudit dispositif de formation de film
JP5998654B2 (ja) 2012-05-31 2016-09-28 東京エレクトロン株式会社 真空処理装置、真空処理方法及び記憶媒体
KR20140129279A (ko) * 2012-08-10 2014-11-06 캐논 아네르바 가부시키가이샤 터널 자기저항소자 제조장치
US9461242B2 (en) * 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
EP3064609B1 (fr) * 2013-10-30 2020-09-16 Tokyo Electron Limited Dispositif de dépôt et procédé de dépôt
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN110565059B (zh) * 2019-09-10 2021-09-17 天津大学 一种具有室温隧道磁电阻效应的氧化钛基纳米颗粒复合薄膜的制备方法及装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0314227A (ja) * 1989-06-13 1991-01-22 Sharp Corp 半導体装置の製造方法
JPH0397855A (ja) * 1989-09-07 1991-04-23 Shimadzu Corp スパッタリング装置
JPH0499271A (ja) * 1990-08-10 1992-03-31 Olympus Optical Co Ltd 多層薄膜の作製方法およびその装置
JP3021601B2 (ja) * 1990-10-22 2000-03-15 神島化学工業株式会社 ＭｇＯターゲット
JPH07180047A (ja) * 1993-12-24 1995-07-18 Matsushita Electric Ind Co Ltd 強誘電体薄膜素子の製造方法及び製造装置
JPH0949075A (ja) * 1995-08-10 1997-02-18 Sony Corp スパッタ装置
JPH11152564A (ja) * 1997-11-17 1999-06-08 Murata Mfg Co Ltd プリスパッタ方法および装置
JP2003069112A (ja) * 2001-08-28 2003-03-07 Nec Corp 強磁性トンネル接合素子の製造方法
WO2005088745A1 (fr) * 2004-03-12 2005-09-22 Japan Science And Technology Agency Élément magnétorésistante et sa méthode de production
JP2005298894A (ja) * 2004-04-12 2005-10-27 Fujitsu Ltd ターゲットのクリーニング方法及び物理的堆積装置

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