JP2008172212A5 - - Google Patents

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Publication number
JP2008172212A5
JP2008172212A5 JP2007314124A JP2007314124A JP2008172212A5 JP 2008172212 A5 JP2008172212 A5 JP 2008172212A5 JP 2007314124 A JP2007314124 A JP 2007314124A JP 2007314124 A JP2007314124 A JP 2007314124A JP 2008172212 A5 JP2008172212 A5 JP 2008172212A5
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JP
Japan
Prior art keywords
impurity
wiring
island
impurity region
impurity element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2007314124A
Other languages
English (en)
Japanese (ja)
Other versions
JP5171232B2 (ja
JP2008172212A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007314124A priority Critical patent/JP5171232B2/ja
Priority claimed from JP2007314124A external-priority patent/JP5171232B2/ja
Publication of JP2008172212A publication Critical patent/JP2008172212A/ja
Publication of JP2008172212A5 publication Critical patent/JP2008172212A5/ja
Application granted granted Critical
Publication of JP5171232B2 publication Critical patent/JP5171232B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007314124A 2006-12-15 2007-12-05 半導体装置の作製方法 Expired - Fee Related JP5171232B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007314124A JP5171232B2 (ja) 2006-12-15 2007-12-05 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006338012 2006-12-15
JP2006338012 2006-12-15
JP2007314124A JP5171232B2 (ja) 2006-12-15 2007-12-05 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008172212A JP2008172212A (ja) 2008-07-24
JP2008172212A5 true JP2008172212A5 (enExample) 2011-01-20
JP5171232B2 JP5171232B2 (ja) 2013-03-27

Family

ID=39526115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007314124A Expired - Fee Related JP5171232B2 (ja) 2006-12-15 2007-12-05 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US8030193B2 (enExample)
JP (1) JP5171232B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101919421B1 (ko) * 2012-08-16 2018-11-19 삼성전자주식회사 반도체소자 및 그 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243435A (en) * 1979-06-22 1981-01-06 International Business Machines Corporation Bipolar transistor fabrication process with an ion implanted emitter
JPS5649576A (en) 1979-09-28 1981-05-06 Hitachi Ltd Schottky diode
JPS57113289A (en) 1980-12-30 1982-07-14 Fujitsu Ltd Semiconductor device and its manufacture
JPS62163368A (ja) * 1986-01-14 1987-07-20 Toshiba Corp ラテラル型シヨツトキバリヤ半導体装置
JPH02178973A (ja) * 1988-12-29 1990-07-11 Nec Corp 横型ショットキーダイオードの製造方法
JPH03203374A (ja) * 1989-12-29 1991-09-05 Nec Corp 半導体装置の製造方法
JP3693321B2 (ja) 2001-01-30 2005-09-07 シャープ株式会社 半導体装置およびその製造方法
GB0118000D0 (en) * 2001-07-24 2001-09-19 Koninkl Philips Electronics Nv Manufacture of semiconductor devices with schottky barriers
US7494066B2 (en) 2003-12-19 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2006066691A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法
JP5297584B2 (ja) * 2005-10-14 2013-09-25 株式会社半導体エネルギー研究所 半導体装置、半導体装置を用いた温度センサー及び半導体装置の作製方法

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