JP2008165286A5 - - Google Patents

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Publication number
JP2008165286A5
JP2008165286A5 JP2006350890A JP2006350890A JP2008165286A5 JP 2008165286 A5 JP2008165286 A5 JP 2008165286A5 JP 2006350890 A JP2006350890 A JP 2006350890A JP 2006350890 A JP2006350890 A JP 2006350890A JP 2008165286 A5 JP2008165286 A5 JP 2008165286A5
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JP
Japan
Prior art keywords
voltage
channel transistor
circuit
amplifier
source
Prior art date
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Granted
Application number
JP2006350890A
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English (en)
Japanese (ja)
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JP4906093B2 (ja
JP2008165286A (ja
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Priority to JP2006350890A priority Critical patent/JP4906093B2/ja
Priority claimed from JP2006350890A external-priority patent/JP4906093B2/ja
Publication of JP2008165286A publication Critical patent/JP2008165286A/ja
Publication of JP2008165286A5 publication Critical patent/JP2008165286A5/ja
Application granted granted Critical
Publication of JP4906093B2 publication Critical patent/JP4906093B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006350890A 2006-12-27 2006-12-27 半導体装置 Expired - Fee Related JP4906093B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006350890A JP4906093B2 (ja) 2006-12-27 2006-12-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006350890A JP4906093B2 (ja) 2006-12-27 2006-12-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2008165286A JP2008165286A (ja) 2008-07-17
JP2008165286A5 true JP2008165286A5 (enExample) 2010-02-04
JP4906093B2 JP4906093B2 (ja) 2012-03-28

Family

ID=39694757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006350890A Expired - Fee Related JP4906093B2 (ja) 2006-12-27 2006-12-27 半導体装置

Country Status (1)

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JP (1) JP4906093B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010082449A1 (en) * 2009-01-16 2010-07-22 Semiconductor Energy Laboratory Co., Ltd. Regulator circuit and rfid tag including the same
JP5411029B2 (ja) * 2010-03-11 2014-02-12 ルネサスエレクトロニクス株式会社 基準電流生成回路
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
CN103529887A (zh) * 2012-07-03 2014-01-22 成都市宏山科技有限公司 用于电子标签中稳定电压的稳压器
CN106227284B (zh) * 2016-08-31 2018-03-16 北海市蕴芯电子科技有限公司 一种新型的rfid线性稳压电路
EP3639633A4 (en) * 2017-08-01 2021-01-27 Hewlett-Packard Development Company, L.P. CHIPLESS RFID PRINTING PROCESSES
KR20250121822A (ko) * 2024-02-05 2025-08-12 한양대학교 산학협력단 플라즈마 변수 진단 장치 및 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5696306A (en) * 1979-12-28 1981-08-04 Sanwa Denki Kk Direct current regulated power supply device
JPS5778424A (en) * 1980-10-31 1982-05-17 Hitachi Chem Co Ltd Molding material
JPH0327409A (ja) * 1989-06-23 1991-02-05 Matsushita Electric Ind Co Ltd バイアス回路
JPH11120306A (ja) * 1997-10-21 1999-04-30 Tokimec Inc データアクセス方法およびその装置
JP3719587B2 (ja) * 2000-03-28 2005-11-24 株式会社日立製作所 半導体装置とｉｃカード
JP2002269519A (ja) * 2001-03-09 2002-09-20 Sharp Corp 半導体装置およびそれを用いるｉｃカード
JP4455079B2 (ja) * 2004-01-30 2010-04-21 富士通マイクロエレクトロニクス株式会社 電源回路

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