JP2008159669A5 - - Google Patents

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Publication number
JP2008159669A5
JP2008159669A5 JP2006344096A JP2006344096A JP2008159669A5 JP 2008159669 A5 JP2008159669 A5 JP 2008159669A5 JP 2006344096 A JP2006344096 A JP 2006344096A JP 2006344096 A JP2006344096 A JP 2006344096A JP 2008159669 A5 JP2008159669 A5 JP 2008159669A5
Authority
JP
Japan
Prior art keywords
nwell
memory cell
amplifier circuit
read data
data amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006344096A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008159669A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006344096A priority Critical patent/JP2008159669A/ja
Priority claimed from JP2006344096A external-priority patent/JP2008159669A/ja
Priority to CN2007101600243A priority patent/CN101207129B/zh
Priority to US11/961,166 priority patent/US7872893B2/en
Publication of JP2008159669A publication Critical patent/JP2008159669A/ja
Publication of JP2008159669A5 publication Critical patent/JP2008159669A5/ja
Pending legal-status Critical Current

Links

JP2006344096A 2006-12-21 2006-12-21 半導体記憶装置 Pending JP2008159669A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006344096A JP2008159669A (ja) 2006-12-21 2006-12-21 半導体記憶装置
CN2007101600243A CN101207129B (zh) 2006-12-21 2007-12-20 半导体存储装置
US11/961,166 US7872893B2 (en) 2006-12-21 2007-12-20 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006344096A JP2008159669A (ja) 2006-12-21 2006-12-21 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2008159669A JP2008159669A (ja) 2008-07-10
JP2008159669A5 true JP2008159669A5 (https=) 2009-12-24

Family

ID=39542521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006344096A Pending JP2008159669A (ja) 2006-12-21 2006-12-21 半導体記憶装置

Country Status (3)

Country Link
US (1) US7872893B2 (https=)
JP (1) JP2008159669A (https=)
CN (1) CN101207129B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8541832B2 (en) 2009-07-23 2013-09-24 Samsung Electronics Co., Ltd. Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same
JP5306125B2 (ja) 2009-09-14 2013-10-02 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR20120003351A (ko) 2010-07-02 2012-01-10 삼성전자주식회사 3차원 비휘발성 메모리 장치 및 그 동작방법
JP2012164864A (ja) * 2011-02-08 2012-08-30 Rohm Co Ltd 半導体記憶装置
WO2016157412A1 (ja) * 2015-03-31 2016-10-06 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08236724A (ja) * 1994-11-07 1996-09-13 Texas Instr Japan Ltd 半導体装置の製造方法
US6191983B1 (en) * 1997-06-19 2001-02-20 Hitachi, Ltd. Semiconductor memory
US6105123A (en) * 1998-03-10 2000-08-15 Hewlett-Packard Company High speed register file organization for a pipelined computer architecture
US6014338A (en) * 1998-12-23 2000-01-11 Sun Microsystems, Inc. Single ended read scheme with global bitline of multi-port register file
JP4565700B2 (ja) * 1999-05-12 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置
JP4361639B2 (ja) * 1999-06-25 2009-11-11 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
JP4434405B2 (ja) * 2000-01-27 2010-03-17 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP4885365B2 (ja) * 2000-05-16 2012-02-29 ルネサスエレクトロニクス株式会社 半導体装置
JP2003068883A (ja) * 2001-08-24 2003-03-07 Hitachi Ltd 半導体記憶装置
JP2004047003A (ja) 2002-07-15 2004-02-12 Renesas Technology Corp 記憶装置
KR100539229B1 (ko) * 2003-01-30 2005-12-27 삼성전자주식회사 듀얼 포트 반도체 메모리 장치
JP3992145B2 (ja) 2003-07-24 2007-10-17 株式会社ルネサステクノロジ 半導体装置

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