JP2008153666A - チオフェン電子デバイス - Google Patents

チオフェン電子デバイス Download PDF

Info

Publication number
JP2008153666A
JP2008153666A JP2007321629A JP2007321629A JP2008153666A JP 2008153666 A JP2008153666 A JP 2008153666A JP 2007321629 A JP2007321629 A JP 2007321629A JP 2007321629 A JP2007321629 A JP 2007321629A JP 2008153666 A JP2008153666 A JP 2008153666A
Authority
JP
Japan
Prior art keywords
aryl
thin film
film transistor
semiconductor
thiophene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007321629A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008153666A5 (enExample
Inventor
Ping Liu
リュウ ピン
Beng S Ong
エス オン ベン
Yiliang Wu
ウ イーリアン
Yuning Li
リ ユニン
Hualong Pan
パン ハーロン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JP2008153666A publication Critical patent/JP2008153666A/ja
Publication of JP2008153666A5 publication Critical patent/JP2008153666A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2007321629A 2006-12-14 2007-12-13 チオフェン電子デバイス Pending JP2008153666A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/638,725 US7718998B2 (en) 2006-12-14 2006-12-14 Thiophene electronic devices

Publications (2)

Publication Number Publication Date
JP2008153666A true JP2008153666A (ja) 2008-07-03
JP2008153666A5 JP2008153666A5 (enExample) 2011-02-03

Family

ID=39204957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007321629A Pending JP2008153666A (ja) 2006-12-14 2007-12-13 チオフェン電子デバイス

Country Status (6)

Country Link
US (1) US7718998B2 (enExample)
EP (1) EP1933394B1 (enExample)
JP (1) JP2008153666A (enExample)
CN (1) CN101207182B (enExample)
CA (1) CA2613719C (enExample)
TW (1) TW200840105A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123951A (ja) * 2008-11-19 2010-06-03 Xerox Corp 薄膜トランジスタおよび半導体組成物
JP2012043921A (ja) * 2010-08-18 2012-03-01 Iwate Univ 有機半導体材料並びに有機半導体装置及びその製造方法
JP2012528183A (ja) * 2009-05-28 2012-11-12 コーニング インコーポレイテッド 縮合チオフェン、その物品および方法
JP2015195258A (ja) * 2014-03-31 2015-11-05 東ソー株式会社 有機薄膜トランジスタ

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090181509A1 (en) * 2008-01-14 2009-07-16 Xerox Corporation Polymer semiconductors with high mobility
JP5487655B2 (ja) * 2008-04-17 2014-05-07 株式会社リコー ［１］ベンゾチエノ［３，２‐ｂ］［１］ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス
WO2010048181A2 (en) * 2008-10-21 2010-04-29 Johnson Controls - Saft Advanced Power Solutions Llc Improved electrode configuration for batteries
CN102369157A (zh) * 2008-12-19 2012-03-07 沃尔贝克材料有限公司 包含多链脂质的油墨和涂料
US20110031475A1 (en) * 2009-08-10 2011-02-10 Xerox Corporation Semiconductor Composition
WO2011041487A1 (en) 2009-09-30 2011-04-07 Innovotech, Llc Biocompatible and biodegradable polymers from renewable natural polyphenols
US7956199B2 (en) * 2009-10-08 2011-06-07 Xerox Corporation Methods for preparing benzodithiophenes
US8304512B2 (en) * 2010-01-19 2012-11-06 Xerox Corporation Benzodithiophene based materials compositions
US8742403B2 (en) 2011-03-08 2014-06-03 Samsung Electronics Co., Ltd. Xanthene based semiconductor compositions
WO2012156500A1 (en) * 2011-05-18 2012-11-22 Université Libre de Bruxelles Semiconducting compound for gas sensing
CN102643290A (zh) * 2012-04-17 2012-08-22 中国科学院化学研究所 二苯并并四噻吩化合物及其制备方法与应用
JP5959647B2 (ja) * 2012-08-15 2016-08-02 帝人株式会社 有機半導体溶液及び有機半導体膜
JP2017059651A (ja) 2015-09-16 2017-03-23 株式会社東芝 光電変換材料分散液とその製造方法、光電変換膜の製造方法と製造装置、および光電変換素子
CN112819125A (zh) * 2021-01-27 2021-05-18 北京印刷学院 一种导电油墨、rfid织物标签及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340786A (ja) * 1997-06-09 1998-12-22 Toyo Ink Mfg Co Ltd 有機エレクトロルミネッセンス素子材料およびそれを使用した有機エレクトロルミネッセンス素子
WO2008059817A1 (en) * 2006-11-14 2008-05-22 Idemitsu Kosan Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
WO2008069060A1 (ja) * 2006-12-04 2008-06-12 Idemitsu Kosan Co., Ltd. 有機薄膜トランジスタ及び有機薄膜発光トランジスタ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3151997B2 (ja) * 1993-03-18 2001-04-03 東洋インキ製造株式会社 有機エレクトロルミネッセンス素子
US5619357A (en) 1995-06-06 1997-04-08 International Business Machines Corporation Flat panel display containing black matrix polymer
US5969376A (en) 1996-08-23 1999-10-19 Lucent Technologies Inc. Organic thin film transistor having a phthalocyanine semiconductor layer
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US5777070A (en) 1997-10-23 1998-07-07 The Dow Chemical Company Process for preparing conjugated polymers
KR100806701B1 (ko) * 1997-10-23 2008-02-27 아이시스이노베이션리미티드 발광 덴드리머 및 장치
JP4061561B2 (ja) * 1998-10-21 2008-03-19 富士電機ホールディングス株式会社 有機分子配向薄膜用材料及び有機分子配向薄膜の製造方法
US7250625B2 (en) 2002-01-11 2007-07-31 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US6770904B2 (en) 2002-01-11 2004-08-03 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US20030227014A1 (en) 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
JP2007502251A (ja) * 2003-08-15 2007-02-08 ユニヴェルシテ・ラヴァル ２位官能化及び２，７位二官能化カルバゾール類のモノマー類、オリゴマー類、及びポリマー類
ATE452154T1 (de) * 2003-10-15 2010-01-15 Merck Patent Gmbh Polybenzodithiophene
US7402681B2 (en) 2004-12-14 2008-07-22 Xerox Corporation Compound with indolocarbazole moieties and devices containing such compound
US20060124921A1 (en) 2004-12-14 2006-06-15 Xerox Corporation Compound with indolocarbazole moieties and devices containing such compound
JP4614272B2 (ja) * 2004-12-28 2011-01-19 国立大学法人京都大学 新規チオフェン誘導体及びそれを用いたトランジスタ素子
FR2881745A1 (fr) * 2005-02-08 2006-08-11 Univ Aix Marseille Ii Derives d'oligothiophenes et leur application en electronique organique
KR101347419B1 (ko) * 2005-04-15 2014-02-06 이 아이 듀폰 디 네모아 앤드 캄파니 아릴-에틸렌 치환된 방향족 화합물 및 유기 반도체로서의 이의 용도
JP5086807B2 (ja) * 2005-05-13 2012-11-28 Ａｇｃセイミケミカル株式会社 新規アミノ基含有複素環誘導体および該複素環誘導体を含有する光電変換用増感色素
KR20070017692A (ko) * 2005-08-08 2007-02-13 삼성전자주식회사 저분자 공액 질소 화합물 및 이를 이용한 소자

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340786A (ja) * 1997-06-09 1998-12-22 Toyo Ink Mfg Co Ltd 有機エレクトロルミネッセンス素子材料およびそれを使用した有機エレクトロルミネッセンス素子
WO2008059817A1 (en) * 2006-11-14 2008-05-22 Idemitsu Kosan Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
WO2008069060A1 (ja) * 2006-12-04 2008-06-12 Idemitsu Kosan Co., Ltd. 有機薄膜トランジスタ及び有機薄膜発光トランジスタ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123951A (ja) * 2008-11-19 2010-06-03 Xerox Corp 薄膜トランジスタおよび半導体組成物
JP2012528183A (ja) * 2009-05-28 2012-11-12 コーニング インコーポレイテッド 縮合チオフェン、その物品および方法
JP2012043921A (ja) * 2010-08-18 2012-03-01 Iwate Univ 有機半導体材料並びに有機半導体装置及びその製造方法
JP2015195258A (ja) * 2014-03-31 2015-11-05 東ソー株式会社 有機薄膜トランジスタ

Also Published As

Publication number Publication date
CA2613719C (en) 2013-02-19
CN101207182B (zh) 2012-02-08
EP1933394B1 (en) 2019-06-26
EP1933394A2 (en) 2008-06-18
US7718998B2 (en) 2010-05-18
US20080146776A1 (en) 2008-06-19
CN101207182A (zh) 2008-06-25
CA2613719A1 (en) 2008-06-14
TW200840105A (en) 2008-10-01
EP1933394A3 (en) 2010-06-23

Similar Documents

Publication Publication Date Title
JP2008153666A (ja) チオフェン電子デバイス
CN101050269B (zh) 官能化杂并苯和由其产生的电子器件
CA2606985C (en) Electronic devices
US8153755B2 (en) Electronic devices
CN101170161B (zh) 电子器件
JP4874945B2 (ja) 電子デバイス及び薄膜トランジスタ
US20060186401A1 (en) Carbonyl-functionalized thiophene compounds and related device structures
EP2213692A1 (en) Polymer Semiconductors with High Mobility
TWI410443B (zh) 聚（炔基噻吩）及由它形成之電子裝置
US7994497B2 (en) Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom
CA2583047C (en) Semiconductors and electronic devices generated therefrom
KR20100021973A (ko) 반도체성 폴리머
US7586120B2 (en) Ethynylene acene polymers and electronic devices generated therefrom

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101210

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101210

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20101210

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20110104

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110222

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110517

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110520

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110525

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110705

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110928

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111018