JP2008141198A - アモルファス半導体によるオープン・ベース・フォトトランジスタ・アレイ - Google Patents
アモルファス半導体によるオープン・ベース・フォトトランジスタ・アレイ Download PDFInfo
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- JP2008141198A JP2008141198A JP2007307361A JP2007307361A JP2008141198A JP 2008141198 A JP2008141198 A JP 2008141198A JP 2007307361 A JP2007307361 A JP 2007307361A JP 2007307361 A JP2007307361 A JP 2007307361A JP 2008141198 A JP2008141198 A JP 2008141198A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000003384 imaging method Methods 0.000 claims abstract description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 24
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- 238000012545 processing Methods 0.000 claims description 12
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14681—Bipolar transistor imagers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】イメージング装置の光センサアレイは、シリコンのような複数アモルファス半導体から形成されるバイポーラフォトトランジスタを使用する。該トランジスタは、オープンベース素子であって、入射する光子によって発生する正孔により、ベース領域への電流注入が生じる。また、コレクタ領域は、好ましくはアモルファスシリコンの真性層で形成される。該トランジスタは、バイポーラ電流が集積される集積モードか、もしくは、光の強度に応答する電流がモニタされる静的モードで動作する。
【選択図】 図1
Description
12 バイポーラ・フォトトランジスタ
16 n型層
18 p型層
20 真性コレクタ層
24 基板
26 処理回路要素
40 電極
42 電極
52 バイポーラ・フォトトランジスタの出力
54 バイポーラ・フォトトランジスタの出力
56 透明上部電極
62 真性コレクタ層
63 p型層
64 真性コレクタ層
65 p型層
68 バイポーラ・フォトトランジスタ
70 バイポーラ・フォトトランジスタ
72 電極
74 電極
76 p型層
78 n型層
80 真性コレクタ層
Claims (8)
- イメージング装置であって、
少なくとも1つのトランジスタ(26)を含む処理回路要素を備えている基板(24)と、
前記基板上のアモルファス半導体バイポーラ・フォトトランジスタ(10、12;68、70)からなるアレイと、前記バイポーラ・フォトトランジスタのそれぞれが、エミッタ(16:76)、ベース(18;63、65;78)、コレクタ(20;62、64;80)を有するとともに、少なくとも1つのp型層(18;63、65;76)及び少なくとも1つのn型層(16;78)を含む複数のアモルファス半導体層を含み、各バイポーラ・フォトトランジスタが、当該フォトトランジスタに受光された光を表す信号をもたらすように構成されている出力(52、54)を有し、各バイポーラ・フォトトランジスタのコレクタが真性コレクタ層(20)を含み、
前記バイポーラ・トランジスタを前記処理回路要素に接続するように配列されている導電性バイア(44、46)を含む、前記基板と前記アモルファス半導体層の間の相互接続構造(38)と、からなり
前記アモルファスシリコンフォトトランジスタ(10、12;68、70)のそれぞれが、当該アモルファス半導体バイポーラ・フォトトランジスタ(10、12;68、70)のコレクタ(20;62、64;80)とベース(18;63、65;78)の間の寄生キャパシタンスを含む積分コンデンサ(102)に接続されていることを特徴とするイメージング装置。 - 前記バイポーラ・フォトトランジスタ(10、12;68、70)が、オープン・ベース素子であることと、各前記バイポーラ・フォトトランジスタのベースが、電気的に開放されたアモルファス半導体ベース層(18;63、65;78)であることを特徴とする請求項1に記載のイメージング装置。
- 前記電気的に開放されたアモルファス半導体ベース層(18;63、65;78)の少なくとも部分が、前記基板(24)と前記真性コレクタ層(20;62、64;80)の間にあり、前記アモルファス半導体ベース層がアモルファスシリコンであることを特徴とする、請求項2に記載のイメージング装置。
- 各前記バイポーラ・フォトトランジスタ(10、12;68、70)が、電極(40、42;72、74)及び前記導電性バイア(44、46)により前記処理回路要素(26)に電気的に結合されることを特徴とする請求項1に記載のイメージング装置。
- 各前記バイポーラ・フォトトランジスタ(10、12)が、p型アモルファス半導体ベース層(18;63、65)によって、前記真性コレクタ層(20;62、64)から間隔をあけて配置されたn型アモルファス半導体エミッタ層(16)を備える、オープン・ベースNPNバイポーラ・トランジスタであることを特徴とする請求項1に記載のイメージング装置。
- 各前記バイポーラ・フォトトランジスタ(10、12)が、前記真性コレクタ層(20;62、64)と接触した第2のn型アモルファス半導体層を含み、さらに、透明上部電極(56)が含まれていることを特徴とする請求項5に記載のイメージング装置。
- 各前記バイポーラ・フォトトランジスタ(68、78)が、n型アモルファス半導体ベース層(78)によって、前記真性コレクタ層(80)から間隔をあけて配置されたp型アモルファス半導体エミッタ層(76)を備える、オープン・ベースPNPバイポーラ・トランジスタであることを特徴とする請求項1に記載のイメージング装置。
- 前記積分コンデンサがさらに、前記アモルファス半導体バイポーラ・フォトトランジスタ(10、12;68、70)のコレクタとベースの間の前記寄生キャパシタンスから隔置されているキャパシタ(102)を含むことを特徴とする請求項1に記載のイメージング装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/795,608 US7038242B2 (en) | 2001-02-28 | 2001-02-28 | Amorphous semiconductor open base phototransistor array |
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JP2002039731A Division JP2002289825A (ja) | 2001-02-28 | 2002-02-18 | アモルファス半導体によるオープン・ベース・フォトトランジスタ・アレイ |
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JP2002039731A Pending JP2002289825A (ja) | 2001-02-28 | 2002-02-18 | アモルファス半導体によるオープン・ベース・フォトトランジスタ・アレイ |
JP2007307361A Pending JP2008141198A (ja) | 2001-02-28 | 2007-11-28 | アモルファス半導体によるオープン・ベース・フォトトランジスタ・アレイ |
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JP2002039731A Pending JP2002289825A (ja) | 2001-02-28 | 2002-02-18 | アモルファス半導体によるオープン・ベース・フォトトランジスタ・アレイ |
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US (1) | US7038242B2 (ja) |
EP (1) | EP1237197A3 (ja) |
JP (2) | JP2002289825A (ja) |
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JP2016040823A (ja) * | 2014-08-12 | 2016-03-24 | 三星電子株式会社Samsung Electronics Co.,Ltd. | イメージセンサー及びこれを含む電子装置 |
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US8487231B2 (en) * | 2007-03-05 | 2013-07-16 | Arokia Nathan | Sensor pixels, arrays and array systems and methods therefor |
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-
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JPH05130510A (ja) * | 1991-11-05 | 1993-05-25 | Nippon Sheet Glass Co Ltd | イメージセンサ |
JPH08322826A (ja) * | 1995-05-31 | 1996-12-10 | Matsushita Electric Ind Co Ltd | X線撮像装置 |
JPH0964402A (ja) * | 1995-08-25 | 1997-03-07 | Toshiba Corp | ハイブリッド型赤外線検出器 |
JPH11274448A (ja) * | 1998-01-20 | 1999-10-08 | Sharp Corp | 二次元画像検出器およびその製造方法 |
JP2001036059A (ja) * | 1999-07-22 | 2001-02-09 | Minolta Co Ltd | 固体撮像装置 |
Cited By (4)
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KR20130060151A (ko) * | 2011-11-29 | 2013-06-07 | 소시에떼 프랑세즈 뒤 드테끄퇴르 인프라루즈 소프라디르 | 개선된 조명 범위를 갖는 방사선 검출 디바이스 |
JP2013138192A (ja) * | 2011-11-29 | 2013-07-11 | Societe Francaise De Detecteurs Infrarouges Sofradir | 改善された照射範囲を有する放射線検出装置 |
KR102098397B1 (ko) | 2011-11-29 | 2020-04-07 | 린레드 | 개선된 조명 범위를 갖는 방사선 검출 디바이스 |
JP2016040823A (ja) * | 2014-08-12 | 2016-03-24 | 三星電子株式会社Samsung Electronics Co.,Ltd. | イメージセンサー及びこれを含む電子装置 |
Also Published As
Publication number | Publication date |
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US20020117682A1 (en) | 2002-08-29 |
EP1237197A2 (en) | 2002-09-04 |
US7038242B2 (en) | 2006-05-02 |
JP2002289825A (ja) | 2002-10-04 |
EP1237197A3 (en) | 2005-06-22 |
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