JP2008135786A5 - - Google Patents

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Publication number
JP2008135786A5
JP2008135786A5 JP2008039079A JP2008039079A JP2008135786A5 JP 2008135786 A5 JP2008135786 A5 JP 2008135786A5 JP 2008039079 A JP2008039079 A JP 2008039079A JP 2008039079 A JP2008039079 A JP 2008039079A JP 2008135786 A5 JP2008135786 A5 JP 2008135786A5
Authority
JP
Japan
Prior art keywords
region
waveguide region
laser diode
quantum well
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008039079A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008135786A (ja
Filing date
Publication date
Priority claimed from US08/757,883 external-priority patent/US5818860A/en
Application filed filed Critical
Publication of JP2008135786A publication Critical patent/JP2008135786A/ja
Publication of JP2008135786A5 publication Critical patent/JP2008135786A5/ja
Pending legal-status Critical Current

Links

JP2008039079A 1996-11-27 2008-02-20 高出力半導体レーザダイオード Pending JP2008135786A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/757,883 US5818860A (en) 1996-11-27 1996-11-27 High power semiconductor laser diode

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9363805A Division JPH10303500A (ja) 1996-11-27 1997-11-27 高出力半導体レーザダイオード

Publications (2)

Publication Number Publication Date
JP2008135786A JP2008135786A (ja) 2008-06-12
JP2008135786A5 true JP2008135786A5 (enExample) 2008-10-09

Family

ID=25049618

Family Applications (2)

Application Number Title Priority Date Filing Date
JP9363805A Pending JPH10303500A (ja) 1996-11-27 1997-11-27 高出力半導体レーザダイオード
JP2008039079A Pending JP2008135786A (ja) 1996-11-27 2008-02-20 高出力半導体レーザダイオード

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP9363805A Pending JPH10303500A (ja) 1996-11-27 1997-11-27 高出力半導体レーザダイオード

Country Status (2)

Country Link
US (2) US5818860A (enExample)
JP (2) JPH10303500A (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2134007C1 (ru) 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Полупроводниковый оптический усилитель
US6195381B1 (en) * 1998-04-27 2001-02-27 Wisconsin Alumni Research Foundation Narrow spectral width high-power distributed feedback semiconductor lasers
US6167073A (en) * 1998-07-23 2000-12-26 Wisconsin Alumni Research Foundation High power laterally antiguided semiconductor light source with reduced transverse optical confinement
RU2142665C1 (ru) 1998-08-10 1999-12-10 Швейкин Василий Иванович Инжекционный лазер
JP2000236141A (ja) * 1999-02-16 2000-08-29 Furukawa Electric Co Ltd:The 半導体発光素子
JP2001068789A (ja) 1999-08-26 2001-03-16 Fuji Photo Film Co Ltd 半導体レーザ
US6546032B1 (en) 1999-08-27 2003-04-08 Mitsui Chemicals, Inc. Semiconductor laser apparatus
US6341189B1 (en) * 1999-11-12 2002-01-22 Sparkolor Corporation Lenticular structure for integrated waveguides
US6782025B2 (en) * 2000-01-20 2004-08-24 Trumpf Photonics, Inc. High power distributed feedback ridge waveguide laser
AU2001262901A1 (en) * 2000-01-20 2001-08-07 Joseph H. Abeles Channelizer switch
US6928223B2 (en) * 2000-07-14 2005-08-09 Massachusetts Institute Of Technology Stab-coupled optical waveguide laser and amplifier
DE10046580A1 (de) 2000-09-20 2002-04-04 Osram Opto Semiconductors Gmbh Halbleiter-Laser
US7084444B2 (en) * 2001-03-19 2006-08-01 Trumpf Photonics, Inc. Method and apparatus for improving efficiency in opto-electronic radiation source devices
US6724795B2 (en) 2002-05-10 2004-04-20 Bookham Technology, Plc Semiconductor laser
US6907056B2 (en) * 2003-08-08 2005-06-14 Wisconsin Alumni Research Foundation Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency
JP5170954B2 (ja) * 2005-07-11 2013-03-27 三菱電機株式会社 半導体レーザ装置
RU2300826C2 (ru) * 2005-08-05 2007-06-10 Василий Иванович Швейкин Инжекционный излучатель
KR20070084973A (ko) * 2006-02-22 2007-08-27 삼성전기주식회사 고출력 반도체 레이저소자
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
US9912118B2 (en) 2010-06-28 2018-03-06 Iulian Basarab Petrescu-Prahova Diode laser type device
US9755402B2 (en) 2010-06-28 2017-09-05 Iulian Basarab Petrescu-Prahova Edge emitter semiconductor laser type of device with end segments for mirrors protection
US9599613B2 (en) 2011-07-20 2017-03-21 University Of Washington Through Its Center For Commercialization Photonic blood typing
US10031138B2 (en) 2012-01-20 2018-07-24 University Of Washington Through Its Center For Commercialization Hierarchical films having ultra low fouling and high recognition element loading properties

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666455A1 (fr) 1990-08-31 1992-03-06 Thomson Csf Dispositif optoelectronique et application a la realisation d'un laser et d'un photodetecteur.
JP2674474B2 (ja) 1993-07-29 1997-11-12 日本電気株式会社 歪量子井戸半導体レーザの気相成長方法
JP3251771B2 (ja) 1994-06-03 2002-01-28 富士写真フイルム株式会社 半導体レーザ
JPH0864906A (ja) 1994-08-24 1996-03-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製法
JPH08195529A (ja) 1995-01-17 1996-07-30 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザエピタキシャル結晶積層体および半導体レーザ
DE19524655A1 (de) * 1995-07-06 1997-01-09 Huang Kuo Hsin LED-Struktur

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