JP2007324607A5 - - Google Patents

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Publication number
JP2007324607A5
JP2007324607A5 JP2007166312A JP2007166312A JP2007324607A5 JP 2007324607 A5 JP2007324607 A5 JP 2007324607A5 JP 2007166312 A JP2007166312 A JP 2007166312A JP 2007166312 A JP2007166312 A JP 2007166312A JP 2007324607 A5 JP2007324607 A5 JP 2007324607A5
Authority
JP
Japan
Prior art keywords
layer
group
guide layer
cladding layer
laser diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007166312A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007324607A (ja
Filing date
Publication date
Priority claimed from US08/726,618 external-priority patent/US5818859A/en
Application filed filed Critical
Publication of JP2007324607A publication Critical patent/JP2007324607A/ja
Publication of JP2007324607A5 publication Critical patent/JP2007324607A5/ja
Pending legal-status Critical Current

Links

JP2007166312A 1996-06-27 2007-06-25 Ｉｉ−ｖｉ族化合物半導体レーザダイオード Pending JP2007324607A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2089396P 1996-06-27 1996-06-27
US08/726,618 US5818859A (en) 1996-06-27 1996-10-07 Be-containing II-VI blue-green laser diodes

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50290398A Division JP4243350B2 (ja) 1996-06-27 1997-01-16 Ｂｅを含んだ▲２▼―▲６▼族青・緑色レーザダイオード

Publications (2)

Publication Number Publication Date
JP2007324607A JP2007324607A (ja) 2007-12-13
JP2007324607A5 true JP2007324607A5 (enExample) 2008-01-31

Family

ID=26694025

Family Applications (2)

Application Number Title Priority Date Filing Date
JP50290398A Expired - Lifetime JP4243350B2 (ja) 1996-06-27 1997-01-16 Ｂｅを含んだ▲２▼―▲６▼族青・緑色レーザダイオード
JP2007166312A Pending JP2007324607A (ja) 1996-06-27 2007-06-25 Ｉｉ−ｖｉ族化合物半導体レーザダイオード

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP50290398A Expired - Lifetime JP4243350B2 (ja) 1996-06-27 1997-01-16 Ｂｅを含んだ▲２▼―▲６▼族青・緑色レーザダイオード

Country Status (8)

Country Link
US (1) US5818859A (enExample)
EP (1) EP1016175B1 (enExample)
JP (2) JP4243350B2 (enExample)
AU (1) AU1534997A (enExample)
DE (1) DE69711942T2 (enExample)
MY (1) MY114337A (enExample)
TW (1) TW413959B (enExample)
WO (1) WO1997050159A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090637A (en) 1997-02-13 2000-07-18 3M Innovative Properties Company Fabrication of II-VI semiconductor device with BeTe buffer layer
US6214678B1 (en) * 1997-05-21 2001-04-10 Hughes Electronics Corp Growth technique for low noise high electron mobility transistors by metal organic vapor phase epitaxy
DE19729186A1 (de) * 1997-07-08 1999-01-14 Siemens Ag Verfahren zum Herstellen eines II-VI-Halbleiter-Bauelements
US5974070A (en) * 1997-11-17 1999-10-26 3M Innovative Properties Company II-VI laser diode with facet degradation reduction structure
JP3692269B2 (ja) * 1999-01-29 2005-09-07 シャープ株式会社 半導体レーザ素子及びその製造方法
US7026653B2 (en) * 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
JP4920344B2 (ja) * 2006-08-25 2012-04-18 株式会社日立製作所 半導体レーザ
US20110156002A1 (en) * 2008-09-04 2011-06-30 Leatherdale Catherine A Light source having light blocking components
WO2010027648A1 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company I i-vi mqw vcsel on a heat sink optically pumped by a gan ld
US8385380B2 (en) * 2008-09-04 2013-02-26 3M Innovative Properties Company Monochromatic light source
US8518814B2 (en) 2011-12-02 2013-08-27 Northrop Grumman Systems Corporation Methods of fabrication of high-density laser diode stacks

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2068339C (en) * 1990-09-12 2001-08-14 Narihito Matsumoto Quantum well semiconductor laser device
US5375134A (en) * 1991-02-21 1994-12-20 Sony Corporation Semiconductor light emitting device
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
CN1119358A (zh) * 1991-05-15 1996-03-27 明尼苏达州采矿制造公司 蓝-绿激光二极管
US5406574A (en) * 1991-10-23 1995-04-11 Kabushiki Kaisha Toshiba Semiconductor laser device
SG77568A1 (en) * 1992-02-19 2001-01-16 Sony Corp Semiconductor laser
JPH06104533A (ja) * 1992-09-22 1994-04-15 Matsushita Electric Ind Co Ltd 青色発光素子およびその製造方法
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
JP3239550B2 (ja) * 1993-08-30 2001-12-17 ソニー株式会社 半導体レーザ
JPH07232999A (ja) * 1994-02-21 1995-09-05 Kobe Steel Ltd ＺｎＳｅ系単結晶及びその製造方法
JP3233330B2 (ja) * 1994-08-23 2001-11-26 松下電器産業株式会社 半導体発光素子及びその製造方法
JPH0870155A (ja) * 1994-08-29 1996-03-12 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子
JPH0897518A (ja) * 1994-09-28 1996-04-12 Sony Corp 半導体発光素子
JP2586349B2 (ja) * 1994-11-17 1997-02-26 日本電気株式会社 半導体発光素子
DE19542241C2 (de) * 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial

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