JP2008130227A - 磁区壁移動を利用した情報記録媒体 - Google Patents
磁区壁移動を利用した情報記録媒体 Download PDFInfo
- Publication number
- JP2008130227A JP2008130227A JP2007301062A JP2007301062A JP2008130227A JP 2008130227 A JP2008130227 A JP 2008130227A JP 2007301062 A JP2007301062 A JP 2007301062A JP 2007301062 A JP2007301062 A JP 2007301062A JP 2008130227 A JP2008130227 A JP 2008130227A
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- JP
- Japan
- Prior art keywords
- magnetic
- magnetic layer
- layer
- domain wall
- information recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 203
- 230000005381 magnetic domain Effects 0.000 claims abstract description 116
- 230000008878 coupling Effects 0.000 claims abstract description 46
- 238000010168 coupling process Methods 0.000 claims abstract description 46
- 238000005859 coupling reaction Methods 0.000 claims abstract description 46
- 239000000696 magnetic material Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910020598 Co Fe Inorganic materials 0.000 claims description 3
- 229910020630 Co Ni Inorganic materials 0.000 claims description 3
- 229910002519 Co-Fe Inorganic materials 0.000 claims description 3
- 229910002440 Co–Ni Inorganic materials 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 3
- 239000003302 ferromagnetic material Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910000521 B alloy Inorganic materials 0.000 description 2
- 229910001257 Nb alloy Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】複数の磁区を有した第1磁性層と、第1磁性層上に形成された第2磁性層と、第1磁性層及び第2磁性層間に形成された第1連結層と、第1磁性層及び第2磁性層と第1連結層との間に形成された抵抗性磁性層とを備える磁区壁移動を利用した情報記録媒体である。これにより、磁区壁を移動させるために電流を印加する場合、磁性層の結合領域での電流漏れを防止できる。
【選択図】図2
Description
12 第2磁区
13 磁区壁
21a,31a,41 第1磁性層
21b,31b,42 第2磁性層
23,35 連結層
30 基板
32 抵抗性磁性物質層
34 絶縁層
43,201,202,203,301,302,311,312 抵抗性磁性層
51 磁性層
52a,52b,52c 磁性層の連結部位
h1,h2,h3 ホール
Claims (10)
- 磁区壁移動を利用した情報記録媒体において、
複数の磁区を有した第1磁性層と、
前記第1磁性層上に形成された第2磁性層と、
前記第1磁性層及び前記第2磁性層間に形成された連結層と、
前記第1磁性層及び前記第2磁性層と前記連結層との間に形成された抵抗性磁性層とを備えることを特徴とする磁区壁移動を利用した情報記録媒体。 - 前記連結層と対応する前記第1磁性層領域の周辺部にさらに形成された抵抗性磁性層を備えることを特徴とする請求項1に記載の磁区壁移動を利用した情報記録媒体。
- 前記連結層と対応する前記第2磁性層領域の周辺部にさらに形成された抵抗性磁性層を備えることを特徴とする請求項1に記載の磁区壁移動を利用した情報記録媒体。
- 前記抵抗性磁性層は、前記第1磁性層または前記第2磁性層のうち少なくともいずれか一つより10倍ないし10000倍の抵抗値を有していることを特徴とする請求項1に記載の磁区壁移動を利用した情報記録媒体。
- 前記抵抗性磁性層の比抵抗は、前記第1磁性層、前記第2磁性層の比抵抗より100倍ないし10000倍大きい物質から形成されていることを特徴とする請求項1ないし請求項4のうちいずれか1項に記載の磁区壁移動を利用した情報記録媒体。
- 前記抵抗性磁性層は、磁性物質から形成されていることを特徴とする請求項1ないし請求項4のうちいずれか1項に記載の磁区壁移動を利用した情報記録媒体。
- 前記第1磁性層は、非晶質強磁性体から形成されていることを特徴とする請求項1ないし請求項4のうちいずれか1項に記載の磁区壁移動を利用した情報記録媒体。
- 前記抵抗性磁性層は、Co−Zr−NbまたはCo−Fe−Bから形成されていることを特徴とする請求項1ないし請求項4のうちいずれか1項に記載の磁区壁移動を利用した情報記録媒体。
- 前記抵抗性磁性層は、磁性物質にCr、Pt、Pd、Mn、Hf、Au、Ir、Fe、Co、NiまたはSiのうちいずれか1つの物質を付加して形成されたことを特徴とする請求項1ないし請求項4のうちいずれか1項に記載の磁区壁移動を利用した情報記録媒体。
- 前記第1磁性層または前記第2磁性層は、Ni−Fe、Co、Co−Ni、Co−Fe、Co−Cr、Fe−PtまたはCo−Fe−Niから形成されていることを特徴とする請求項1ないし請求項4のうちいずれか1項に記載の磁区壁移動を利用した情報記録媒体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0114717 | 2006-11-20 | ||
KR1020060114717A KR100868761B1 (ko) | 2006-11-20 | 2006-11-20 | 자구벽 이동을 이용한 정보 저장 매체 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008130227A true JP2008130227A (ja) | 2008-06-05 |
JP5074159B2 JP5074159B2 (ja) | 2012-11-14 |
Family
ID=38983450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007301062A Expired - Fee Related JP5074159B2 (ja) | 2006-11-20 | 2007-11-20 | 磁区壁移動を利用した情報記録媒体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8559279B2 (ja) |
EP (1) | EP1923891B1 (ja) |
JP (1) | JP5074159B2 (ja) |
KR (1) | KR100868761B1 (ja) |
CN (1) | CN101188271B (ja) |
DE (1) | DE602007003936D1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010010683A (ja) * | 2008-06-24 | 2010-01-14 | Samsung Electronics Co Ltd | 情報保存装置及びその動作方法 |
JP2010218678A (ja) * | 2009-03-16 | 2010-09-30 | Samsung Electronics Co Ltd | 情報保存装置及びその動作方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100829571B1 (ko) * | 2006-10-27 | 2008-05-14 | 삼성전자주식회사 | 자구벽 이동을 이용한 데이터 저장 장치 및 그의 동작 방법 |
US8050074B2 (en) * | 2009-02-17 | 2011-11-01 | Samsung Electronics Co., Ltd. | Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices |
US8406029B2 (en) | 2009-02-17 | 2013-03-26 | Samsung Electronics Co., Ltd. | Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices |
US8279667B2 (en) * | 2009-05-08 | 2012-10-02 | Samsung Electronics Co., Ltd. | Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement |
US8164940B2 (en) * | 2009-12-15 | 2012-04-24 | Hitachi Global Storage Technologies Netherlands, B.V. | Read/write structures for a three dimensional memory |
CN104575582B (zh) * | 2013-10-21 | 2018-05-04 | 华为技术有限公司 | 一种存储单元、存储器及存储单元控制方法 |
CN105244043B (zh) * | 2014-07-11 | 2018-09-21 | 华为技术有限公司 | 磁性存储轨道和磁性存储器 |
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JP2000195250A (ja) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | 磁気メモリ装置 |
WO2005069368A1 (ja) * | 2004-01-15 | 2005-07-28 | Japan Science And Technology Agency | 電流注入磁壁移動素子 |
JP2006073930A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ |
JP2006303159A (ja) * | 2005-04-20 | 2006-11-02 | Fuji Electric Holdings Co Ltd | スピン注入磁区移動素子およびこれを用いた装置 |
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-
2006
- 2006-11-20 KR KR1020060114717A patent/KR100868761B1/ko not_active IP Right Cessation
-
2007
- 2007-11-15 DE DE602007003936T patent/DE602007003936D1/de active Active
- 2007-11-15 EP EP07120797A patent/EP1923891B1/en not_active Expired - Fee Related
- 2007-11-19 US US11/984,478 patent/US8559279B2/en not_active Expired - Fee Related
- 2007-11-20 CN CN2007101934028A patent/CN101188271B/zh not_active Expired - Fee Related
- 2007-11-20 JP JP2007301062A patent/JP5074159B2/ja not_active Expired - Fee Related
Patent Citations (4)
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JP2000195250A (ja) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | 磁気メモリ装置 |
WO2005069368A1 (ja) * | 2004-01-15 | 2005-07-28 | Japan Science And Technology Agency | 電流注入磁壁移動素子 |
JP2006073930A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010010683A (ja) * | 2008-06-24 | 2010-01-14 | Samsung Electronics Co Ltd | 情報保存装置及びその動作方法 |
JP2010218678A (ja) * | 2009-03-16 | 2010-09-30 | Samsung Electronics Co Ltd | 情報保存装置及びその動作方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5074159B2 (ja) | 2012-11-14 |
DE602007003936D1 (de) | 2010-02-04 |
US8559279B2 (en) | 2013-10-15 |
KR20080045511A (ko) | 2008-05-23 |
CN101188271B (zh) | 2011-03-30 |
US20080137521A1 (en) | 2008-06-12 |
EP1923891A1 (en) | 2008-05-21 |
CN101188271A (zh) | 2008-05-28 |
KR100868761B1 (ko) | 2008-11-13 |
EP1923891B1 (en) | 2009-12-23 |
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