JP2008091962A5 - - Google Patents
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- Publication number
- JP2008091962A5 JP2008091962A5 JP2007339293A JP2007339293A JP2008091962A5 JP 2008091962 A5 JP2008091962 A5 JP 2008091962A5 JP 2007339293 A JP2007339293 A JP 2007339293A JP 2007339293 A JP2007339293 A JP 2007339293A JP 2008091962 A5 JP2008091962 A5 JP 2008091962A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- semiconductor
- type
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 130
- 229910002601 GaN Inorganic materials 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 24
- 229910002704 AlGaN Inorganic materials 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 10
- -1 gallium nitride compound Chemical class 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000005253 cladding Methods 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- BKOOMYPCSUNDGP-UHFFFAOYSA-N trimethyl-ethylene Natural products CC=C(C)C BKOOMYPCSUNDGP-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007339293A JP2008091962A (ja) | 2007-12-28 | 2007-12-28 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007339293A JP2008091962A (ja) | 2007-12-28 | 2007-12-28 | 半導体発光素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32633596A Division JP4104686B2 (ja) | 1996-12-06 | 1996-12-06 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008091962A JP2008091962A (ja) | 2008-04-17 |
| JP2008091962A5 true JP2008091962A5 (https=) | 2008-12-18 |
Family
ID=39375692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007339293A Pending JP2008091962A (ja) | 2007-12-28 | 2007-12-28 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008091962A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9577148B2 (en) * | 2013-05-09 | 2017-02-21 | The University Of Tokyo | Light emitting diode element and method of manufacturing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2917742B2 (ja) * | 1992-07-07 | 1999-07-12 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子とその製造方法 |
| JPH07118571B2 (ja) * | 1993-02-12 | 1995-12-18 | 日本電気株式会社 | 半導体歪量子井戸構造 |
| JP2932467B2 (ja) * | 1993-03-12 | 1999-08-09 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JP3241250B2 (ja) * | 1994-12-22 | 2001-12-25 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| JPH08316587A (ja) * | 1995-05-18 | 1996-11-29 | Toyoda Gosei Co Ltd | ３族窒化物半導体発光素子 |
| JPH08316582A (ja) * | 1995-05-19 | 1996-11-29 | Nec Corp | 半導体レーザ |
-
2007
- 2007-12-28 JP JP2007339293A patent/JP2008091962A/ja active Pending
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