JP2008042189A5 - - Google Patents

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Publication number
JP2008042189A5
JP2008042189A5 JP2007184098A JP2007184098A JP2008042189A5 JP 2008042189 A5 JP2008042189 A5 JP 2008042189A5 JP 2007184098 A JP2007184098 A JP 2007184098A JP 2007184098 A JP2007184098 A JP 2007184098A JP 2008042189 A5 JP2008042189 A5 JP 2008042189A5
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JP
Japan
Prior art keywords
memory
memory transistor
electrically connected
memory cell
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007184098A
Other languages
English (en)
Japanese (ja)
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JP2008042189A (ja
JP5305620B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007184098A priority Critical patent/JP5305620B2/ja
Priority claimed from JP2007184098A external-priority patent/JP5305620B2/ja
Publication of JP2008042189A publication Critical patent/JP2008042189A/ja
Publication of JP2008042189A5 publication Critical patent/JP2008042189A5/ja
Application granted granted Critical
Publication of JP5305620B2 publication Critical patent/JP5305620B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007184098A 2006-07-14 2007-07-13 不揮発性メモリ Expired - Fee Related JP5305620B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007184098A JP5305620B2 (ja) 2006-07-14 2007-07-13 不揮発性メモリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006194660 2006-07-14
JP2006194660 2006-07-14
JP2007184098A JP5305620B2 (ja) 2006-07-14 2007-07-13 不揮発性メモリ

Publications (3)

Publication Number Publication Date
JP2008042189A JP2008042189A (ja) 2008-02-21
JP2008042189A5 true JP2008042189A5 (cg-RX-API-DMAC7.html) 2010-07-29
JP5305620B2 JP5305620B2 (ja) 2013-10-02

Family

ID=39176795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007184098A Expired - Fee Related JP5305620B2 (ja) 2006-07-14 2007-07-13 不揮発性メモリ

Country Status (1)

Country Link
JP (1) JP5305620B2 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5537366B2 (ja) * 2009-10-01 2014-07-02 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9847109B2 (en) * 2015-12-21 2017-12-19 Imec Vzw Memory cell
CN114649024A (zh) * 2020-12-18 2022-06-21 华为技术有限公司 一种存储单元、存储阵列以及数据存储方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10321821A (ja) * 1997-05-14 1998-12-04 Sanyo Electric Co Ltd 不揮発性半導体メモリおよびその動作方法
JP2000068482A (ja) * 1998-08-18 2000-03-03 Toshiba Corp 不揮発性半導体メモリ
TW498544B (en) * 2000-03-13 2002-08-11 Tadahiro Ohmi Flash memory device, manufacturing and its dielectric film formation
JP5068402B2 (ja) * 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法

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