JP2008042036A - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

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Publication number
JP2008042036A
JP2008042036A JP2006216261A JP2006216261A JP2008042036A JP 2008042036 A JP2008042036 A JP 2008042036A JP 2006216261 A JP2006216261 A JP 2006216261A JP 2006216261 A JP2006216261 A JP 2006216261A JP 2008042036 A JP2008042036 A JP 2008042036A
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JP
Japan
Prior art keywords
substrate
optical system
measurement
projection optical
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006216261A
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English (en)
Japanese (ja)
Other versions
JP2008042036A5 (enExample
Inventor
Shinichiro Hirai
真一郎 平井
Tetsuya Mori
鉄也 森
Kiyonari Miura
聖也 三浦
Yoshinori Osaki
美紀 大嵜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006216261A priority Critical patent/JP2008042036A/ja
Priority to TW096128626A priority patent/TW200826154A/zh
Priority to KR1020070078871A priority patent/KR100898441B1/ko
Priority to US11/835,035 priority patent/US8130360B2/en
Publication of JP2008042036A publication Critical patent/JP2008042036A/ja
Publication of JP2008042036A5 publication Critical patent/JP2008042036A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006216261A 2006-08-08 2006-08-08 露光装置及びデバイス製造方法 Withdrawn JP2008042036A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006216261A JP2008042036A (ja) 2006-08-08 2006-08-08 露光装置及びデバイス製造方法
TW096128626A TW200826154A (en) 2006-08-08 2007-08-03 Exposure apparatus and device manufacturing method
KR1020070078871A KR100898441B1 (ko) 2006-08-08 2007-08-07 노광장치 및 디바이스의 제조방법
US11/835,035 US8130360B2 (en) 2006-08-08 2007-08-07 Exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006216261A JP2008042036A (ja) 2006-08-08 2006-08-08 露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2008042036A true JP2008042036A (ja) 2008-02-21
JP2008042036A5 JP2008042036A5 (enExample) 2009-09-24

Family

ID=39050394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006216261A Withdrawn JP2008042036A (ja) 2006-08-08 2006-08-08 露光装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US8130360B2 (enExample)
JP (1) JP2008042036A (enExample)
KR (1) KR100898441B1 (enExample)
TW (1) TW200826154A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087484A (ja) * 2008-09-02 2010-04-15 Asml Netherlands Bv デバイス製造方法、制御システム、コンピュータプログラムおよびコンピュータ可読媒体
KR100971322B1 (ko) 2008-08-21 2010-07-20 주식회사 동부하이텍 반도체 소자 제조용 노광장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8068211B2 (en) * 2007-07-06 2011-11-29 Canon Kabushiki Kaisha Exposure apparatus and method for manufacturing device
TWI418914B (zh) * 2010-03-31 2013-12-11 Pixart Imaging Inc 適用於光感測系統之失焦校正模組及其方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130707A (en) * 1980-03-18 1981-10-13 Canon Inc Photo-printing device
JPH0743245B2 (ja) * 1987-07-03 1995-05-15 キヤノン株式会社 アライメント装置
US5331371A (en) * 1990-09-26 1994-07-19 Canon Kabushiki Kaisha Alignment and exposure method
JP3109852B2 (ja) * 1991-04-16 2000-11-20 キヤノン株式会社 投影露光装置
JP3183046B2 (ja) * 1994-06-06 2001-07-03 キヤノン株式会社 異物検査装置及びそれを用いた半導体デバイスの製造方法
US5751404A (en) * 1995-07-24 1998-05-12 Canon Kabushiki Kaisha Exposure apparatus and method wherein alignment is carried out by comparing marks which are incident on both reticle stage and wafer stage reference plates
JP4136067B2 (ja) * 1997-05-02 2008-08-20 キヤノン株式会社 検出装置及びそれを用いた露光装置
JP4261689B2 (ja) 1999-07-01 2009-04-30 キヤノン株式会社 露光装置、当該露光装置に対して用いられる方法、及び当該露光装置を用いたデバイスの製造方法
JP2001332490A (ja) 2000-03-14 2001-11-30 Nikon Corp 位置合わせ方法、露光方法、露光装置、及びデバイス製造方法
US20020021433A1 (en) * 2000-03-24 2002-02-21 Shinichi Okita scanning exposure apparatus
JP2002093691A (ja) * 2000-09-20 2002-03-29 Canon Inc 露光装置、結像性能測定方法、デバイス製造方法、半導体製造工場および露光装置の保守方法
JP2003084189A (ja) * 2001-09-07 2003-03-19 Canon Inc オートフォーカス検出方法および投影露光装置
JP5002100B2 (ja) * 2001-09-13 2012-08-15 キヤノン株式会社 焦点位置検出方法及び焦点位置検出装置
JP3780221B2 (ja) * 2002-03-26 2006-05-31 キヤノン株式会社 露光方法及び装置
JP4227402B2 (ja) * 2002-12-06 2009-02-18 キヤノン株式会社 走査型露光装置
JP4174324B2 (ja) * 2003-01-06 2008-10-29 キヤノン株式会社 露光方法及び装置
US7154582B2 (en) * 2003-02-14 2006-12-26 Canon Kabushiki Kaisha Exposure apparatus and method
JP4497908B2 (ja) * 2003-12-15 2010-07-07 キヤノン株式会社 露光方法及び装置
JP2005175407A (ja) * 2003-12-15 2005-06-30 Canon Inc 計測方法及び装置、それを利用した露光方法及び装置、並びに、デバイス製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100971322B1 (ko) 2008-08-21 2010-07-20 주식회사 동부하이텍 반도체 소자 제조용 노광장치
JP2010087484A (ja) * 2008-09-02 2010-04-15 Asml Netherlands Bv デバイス製造方法、制御システム、コンピュータプログラムおよびコンピュータ可読媒体
US8411254B2 (en) 2008-09-02 2013-04-02 Asml Netherlands B.V. Device manufacturing method, control system, computer program and computer-readable medium

Also Published As

Publication number Publication date
KR20080013772A (ko) 2008-02-13
US20080036990A1 (en) 2008-02-14
TW200826154A (en) 2008-06-16
US8130360B2 (en) 2012-03-06
KR100898441B1 (ko) 2009-05-21

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