JP2008021968A5 - - Google Patents

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Publication number
JP2008021968A5
JP2008021968A5 JP2007121187A JP2007121187A JP2008021968A5 JP 2008021968 A5 JP2008021968 A5 JP 2008021968A5 JP 2007121187 A JP2007121187 A JP 2007121187A JP 2007121187 A JP2007121187 A JP 2007121187A JP 2008021968 A5 JP2008021968 A5 JP 2008021968A5
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JP
Japan
Prior art keywords
resistance layer
bit line
resistance
memory device
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007121187A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008021968A (ja
Filing date
Publication date
Priority claimed from KR1020060065469A external-priority patent/KR20080006358A/ko
Application filed filed Critical
Publication of JP2008021968A publication Critical patent/JP2008021968A/ja
Publication of JP2008021968A5 publication Critical patent/JP2008021968A5/ja
Pending legal-status Critical Current

Links

JP2007121187A 2006-07-12 2007-05-01 不揮発性メモリ素子の動作方法 Pending JP2008021968A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060065469A KR20080006358A (ko) 2006-07-12 2006-07-12 비휘발성 메모리 소자의 동작 방법

Publications (2)

Publication Number Publication Date
JP2008021968A JP2008021968A (ja) 2008-01-31
JP2008021968A5 true JP2008021968A5 (enExample) 2010-06-17

Family

ID=38999940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007121187A Pending JP2008021968A (ja) 2006-07-12 2007-05-01 不揮発性メモリ素子の動作方法

Country Status (3)

Country Link
JP (1) JP2008021968A (enExample)
KR (1) KR20080006358A (enExample)
CN (1) CN101106135A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100946179B1 (ko) * 2008-05-29 2010-03-09 한국과학기술원 비휘발성 반도체 메모리 소자 및 그 제조방법
US8194441B2 (en) * 2010-09-23 2012-06-05 Micron Technology, Inc. Phase change memory state determination using threshold edge detection
JP5763004B2 (ja) 2012-03-26 2015-08-12 株式会社東芝 不揮発性半導体記憶装置
US11316105B2 (en) * 2020-03-17 2022-04-26 International Business Machines Corporation Phase change material switch and method of fabricating same

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