JP2008016564A - 樹脂封止型パワーモジュール - Google Patents
樹脂封止型パワーモジュール Download PDFInfo
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- JP2008016564A JP2008016564A JP2006184832A JP2006184832A JP2008016564A JP 2008016564 A JP2008016564 A JP 2008016564A JP 2006184832 A JP2006184832 A JP 2006184832A JP 2006184832 A JP2006184832 A JP 2006184832A JP 2008016564 A JP2008016564 A JP 2008016564A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】 放熱ベース板、放熱ベース板に載置され、放熱ベース板に半田接合された絶縁基板、絶縁基板に搭載された半導体素子、半導体素子が搭載された絶縁基板を収納する外装ケース、外装ケース内に充填された封止樹脂を備え、封止樹脂は、針入度(JIS K−2220、1/4コーン)が25以上、35以下の特性を有するシリコーンエラストマーである。
【選択図】 図1
Description
図1は、本発明を実施する為の実施の形態1における樹脂封止型パワーモジュールを示す模式図である。図1において、1は樹脂封止型パワーモジュールであり、2は放熱ベース板、3は外装ケースである。図1に示す通り、樹脂封止型パワーモジュール1は、放熱ベース板2にて底面を形成し、外装ケース3にて側面(4面)及び天面を形成してなる箱形形状となっている。尚、放熱ベース板2は、熱伝導性に優れた材料、例えば、銅やAlSiCにて形成されている。4は放熱ベース板2の上に半田5により接合された絶縁基板である。絶縁基板4は、例えば、窒化アルミ(AlN)等の高絶縁性で且つ、熱伝導性に優れたセラミック4aを基材とし、表電極層4bと裏電極層4cを接合して構成されている。絶縁基板4の上には、IGBTである半導体素子6a(以下、IGBT6aという)とDiodeである半導体素子6b(以下、Diode6bという)が半田7により実装(搭載)されている。IGBT6a及びDiode6bは、一対(正極及び負極)の電極端子8とボンディングワイヤ9で電気的に接続されている。尚、ボンディングワイヤ9はアルミ材である(以下、アルミワイヤ9という)。
2 放熱ベース板
3 外装ケース
4 絶縁基板
6a IGBT(半導体素子)
6b Diode(半導体素子)
10 封止樹脂(シリコーンエラストマー)
Claims (1)
- 放熱ベース板、前記放熱ベース板に載置され、前記放熱ベース板に半田接合された絶縁基板、前記絶縁基板に搭載された半導体素子、
前記半導体素子が搭載された絶縁基板を収納する外装ケース、
前記外装ケース内に充填された封止樹脂を備え、
前記封止樹脂は、針入度が25以上、35以下の特性を有するシリコーンエラストマーであることを特徴とする樹脂封止型パワーモジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006184832A JP2008016564A (ja) | 2006-07-04 | 2006-07-04 | 樹脂封止型パワーモジュール |
Applications Claiming Priority (1)
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JP2006184832A JP2008016564A (ja) | 2006-07-04 | 2006-07-04 | 樹脂封止型パワーモジュール |
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JP2008016564A true JP2008016564A (ja) | 2008-01-24 |
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JP2006184832A Pending JP2008016564A (ja) | 2006-07-04 | 2006-07-04 | 樹脂封止型パワーモジュール |
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JP (1) | JP2008016564A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010034151A (ja) * | 2008-07-25 | 2010-02-12 | Fuji Electric Device Technology Co Ltd | パワーモジュール |
KR101097921B1 (ko) | 2010-03-05 | 2011-12-23 | 동아전장주식회사 | 모터용 제어기 및 그 제조방법 |
KR101216896B1 (ko) | 2011-02-11 | 2012-12-28 | 서울특별시도시철도공사 | 파워 모듈 |
CN103035587A (zh) * | 2012-12-11 | 2013-04-10 | 国网智能电网研究院 | 一种大功率igbt模块封装结构 |
CN103477429A (zh) * | 2011-05-13 | 2013-12-25 | 富士电机株式会社 | 半导体器件及其制造方法 |
WO2023098184A1 (zh) * | 2021-11-30 | 2023-06-08 | 北京卫星制造厂有限公司 | 一种igbt电气单元封装件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04350957A (ja) * | 1991-05-28 | 1992-12-04 | Sansha Electric Mfg Co Ltd | 電力用半導体モジュール |
JPH1060282A (ja) * | 1996-08-20 | 1998-03-03 | Shin Etsu Chem Co Ltd | 硬化性シリコーンゴム組成物、その硬化物及びそれにより封止された樹脂封止型半導体装置 |
JPH1126688A (ja) * | 1997-07-02 | 1999-01-29 | Sanken Electric Co Ltd | 樹脂封止型電子回路装置 |
JPH1167977A (ja) * | 1997-08-25 | 1999-03-09 | Hitachi Ltd | 樹脂封止型パワーモジュール装置およびその製法 |
JPH11297730A (ja) * | 1998-04-08 | 1999-10-29 | Denso Corp | 半導体装置及び半導体装置の製造方法 |
JP2000234993A (ja) * | 1999-02-16 | 2000-08-29 | Mitsubishi Electric Corp | パワー半導体装置の欠陥検査方法 |
-
2006
- 2006-07-04 JP JP2006184832A patent/JP2008016564A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04350957A (ja) * | 1991-05-28 | 1992-12-04 | Sansha Electric Mfg Co Ltd | 電力用半導体モジュール |
JPH1060282A (ja) * | 1996-08-20 | 1998-03-03 | Shin Etsu Chem Co Ltd | 硬化性シリコーンゴム組成物、その硬化物及びそれにより封止された樹脂封止型半導体装置 |
JPH1126688A (ja) * | 1997-07-02 | 1999-01-29 | Sanken Electric Co Ltd | 樹脂封止型電子回路装置 |
JPH1167977A (ja) * | 1997-08-25 | 1999-03-09 | Hitachi Ltd | 樹脂封止型パワーモジュール装置およびその製法 |
JPH11297730A (ja) * | 1998-04-08 | 1999-10-29 | Denso Corp | 半導体装置及び半導体装置の製造方法 |
JP2000234993A (ja) * | 1999-02-16 | 2000-08-29 | Mitsubishi Electric Corp | パワー半導体装置の欠陥検査方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010034151A (ja) * | 2008-07-25 | 2010-02-12 | Fuji Electric Device Technology Co Ltd | パワーモジュール |
KR101097921B1 (ko) | 2010-03-05 | 2011-12-23 | 동아전장주식회사 | 모터용 제어기 및 그 제조방법 |
KR101216896B1 (ko) | 2011-02-11 | 2012-12-28 | 서울특별시도시철도공사 | 파워 모듈 |
CN103477429A (zh) * | 2011-05-13 | 2013-12-25 | 富士电机株式会社 | 半导体器件及其制造方法 |
CN103035587A (zh) * | 2012-12-11 | 2013-04-10 | 国网智能电网研究院 | 一种大功率igbt模块封装结构 |
WO2023098184A1 (zh) * | 2021-11-30 | 2023-06-08 | 北京卫星制造厂有限公司 | 一种igbt电气单元封装件 |
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