JP2008010849A - 半導体装置及び半導体装置の作製方法 - Google Patents
半導体装置及び半導体装置の作製方法 Download PDFInfo
- Publication number
- JP2008010849A JP2008010849A JP2007141450A JP2007141450A JP2008010849A JP 2008010849 A JP2008010849 A JP 2008010849A JP 2007141450 A JP2007141450 A JP 2007141450A JP 2007141450 A JP2007141450 A JP 2007141450A JP 2008010849 A JP2008010849 A JP 2008010849A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- impurity region
- wiring
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007141450A JP2008010849A (ja) | 2006-06-01 | 2007-05-29 | 半導体装置及び半導体装置の作製方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006153548 | 2006-06-01 | ||
JP2007141450A JP2008010849A (ja) | 2006-06-01 | 2007-05-29 | 半導体装置及び半導体装置の作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008010849A true JP2008010849A (ja) | 2008-01-17 |
JP2008010849A5 JP2008010849A5 (zh) | 2010-06-17 |
Family
ID=39068726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007141450A Withdrawn JP2008010849A (ja) | 2006-06-01 | 2007-05-29 | 半導体装置及び半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2008010849A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110059878A (ko) | 2008-09-30 | 2011-06-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8803663B2 (en) | 2008-12-25 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic appliance using semiconductor device, and document using semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000138346A (ja) * | 1998-10-30 | 2000-05-16 | Fujitsu Ltd | Mos型容量素子、液晶表示装置、半導体集積回路装置、およびその製造方法 |
JP2001007292A (ja) * | 1999-06-24 | 2001-01-12 | Sanyo Electric Co Ltd | 半導体集積回路およびその配置方法 |
JP2005202943A (ja) * | 2003-12-19 | 2005-07-28 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
-
2007
- 2007-05-29 JP JP2007141450A patent/JP2008010849A/ja not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000138346A (ja) * | 1998-10-30 | 2000-05-16 | Fujitsu Ltd | Mos型容量素子、液晶表示装置、半導体集積回路装置、およびその製造方法 |
JP2001007292A (ja) * | 1999-06-24 | 2001-01-12 | Sanyo Electric Co Ltd | 半導体集積回路およびその配置方法 |
JP2005202943A (ja) * | 2003-12-19 | 2005-07-28 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110059878A (ko) | 2008-09-30 | 2011-06-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8253469B2 (en) | 2008-09-30 | 2012-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8803663B2 (en) | 2008-12-25 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic appliance using semiconductor device, and document using semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101424526B1 (ko) | 반도체 장치 및 반도체 장치의 제작 방법 | |
US8353459B2 (en) | Semiconductor device and method for manufacturing the same | |
US7683838B2 (en) | Semiconductor device | |
KR101595755B1 (ko) | 반도체 장치 | |
US7598526B2 (en) | Semiconductor device and manufacturing method thereof | |
CN102136482B (zh) | 半导体装置及其制造方法 | |
US9130051B2 (en) | Semiconductor device including semiconductor layer over insulating layer and manufacturing method thereof | |
JP2008010849A (ja) | 半導体装置及び半導体装置の作製方法 | |
JP2005202947A (ja) | 半導体装置、並びに無線タグ及びラベル類 | |
US7608892B2 (en) | Semiconductor device and manufacturing method of the same | |
JP5137453B2 (ja) | 半導体装置の作製方法 | |
JP5137424B2 (ja) | 半導体装置及びその作製方法 | |
JP5259977B2 (ja) | 半導体装置及び半導体装置の作製方法 | |
JP2008227320A (ja) | 半導体装置及びその作製方法 | |
KR20080074800A (ko) | 반도체 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100423 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100423 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121115 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121120 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121207 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130129 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20130401 |