JP2008010849A - 半導体装置及び半導体装置の作製方法 - Google Patents

半導体装置及び半導体装置の作製方法 Download PDF

Info

Publication number
JP2008010849A
JP2008010849A JP2007141450A JP2007141450A JP2008010849A JP 2008010849 A JP2008010849 A JP 2008010849A JP 2007141450 A JP2007141450 A JP 2007141450A JP 2007141450 A JP2007141450 A JP 2007141450A JP 2008010849 A JP2008010849 A JP 2008010849A
Authority
JP
Japan
Prior art keywords
film
semiconductor
impurity region
wiring
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007141450A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008010849A5 (zh
Inventor
Tomoaki Atami
知昭 熱海
Hiroki Inoue
広樹 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007141450A priority Critical patent/JP2008010849A/ja
Publication of JP2008010849A publication Critical patent/JP2008010849A/ja
Publication of JP2008010849A5 publication Critical patent/JP2008010849A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2007141450A 2006-06-01 2007-05-29 半導体装置及び半導体装置の作製方法 Withdrawn JP2008010849A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007141450A JP2008010849A (ja) 2006-06-01 2007-05-29 半導体装置及び半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006153548 2006-06-01
JP2007141450A JP2008010849A (ja) 2006-06-01 2007-05-29 半導体装置及び半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2008010849A true JP2008010849A (ja) 2008-01-17
JP2008010849A5 JP2008010849A5 (zh) 2010-06-17

Family

ID=39068726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007141450A Withdrawn JP2008010849A (ja) 2006-06-01 2007-05-29 半導体装置及び半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2008010849A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110059878A (ko) 2008-09-30 2011-06-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8803663B2 (en) 2008-12-25 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic appliance using semiconductor device, and document using semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138346A (ja) * 1998-10-30 2000-05-16 Fujitsu Ltd Ｍｏｓ型容量素子、液晶表示装置、半導体集積回路装置、およびその製造方法
JP2001007292A (ja) * 1999-06-24 2001-01-12 Sanyo Electric Co Ltd 半導体集積回路およびその配置方法
JP2005202943A (ja) * 2003-12-19 2005-07-28 Semiconductor Energy Lab Co Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138346A (ja) * 1998-10-30 2000-05-16 Fujitsu Ltd Ｍｏｓ型容量素子、液晶表示装置、半導体集積回路装置、およびその製造方法
JP2001007292A (ja) * 1999-06-24 2001-01-12 Sanyo Electric Co Ltd 半導体集積回路およびその配置方法
JP2005202943A (ja) * 2003-12-19 2005-07-28 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110059878A (ko) 2008-09-30 2011-06-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8253469B2 (en) 2008-09-30 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8803663B2 (en) 2008-12-25 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic appliance using semiconductor device, and document using semiconductor device

Similar Documents

Publication Publication Date Title
KR101424526B1 (ko) 반도체 장치 및 반도체 장치의 제작 방법
US8353459B2 (en) Semiconductor device and method for manufacturing the same
US7683838B2 (en) Semiconductor device
KR101595755B1 (ko) 반도체 장치
US7598526B2 (en) Semiconductor device and manufacturing method thereof
CN102136482B (zh) 半导体装置及其制造方法
US9130051B2 (en) Semiconductor device including semiconductor layer over insulating layer and manufacturing method thereof
JP2008010849A (ja) 半導体装置及び半導体装置の作製方法
JP2005202947A (ja) 半導体装置、並びに無線タグ及びラベル類
US7608892B2 (en) Semiconductor device and manufacturing method of the same
JP5137453B2 (ja) 半導体装置の作製方法
JP5137424B2 (ja) 半導体装置及びその作製方法
JP5259977B2 (ja) 半導体装置及び半導体装置の作製方法
JP2008227320A (ja) 半導体装置及びその作製方法
KR20080074800A (ko) 반도체 장치

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100423

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100423

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121115

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121120

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121207

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130129

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20130401