JP2008010849A5 - - Google Patents

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Publication number
JP2008010849A5
JP2008010849A5 JP2007141450A JP2007141450A JP2008010849A5 JP 2008010849 A5 JP2008010849 A5 JP 2008010849A5 JP 2007141450 A JP2007141450 A JP 2007141450A JP 2007141450 A JP2007141450 A JP 2007141450A JP 2008010849 A5 JP2008010849 A5 JP 2008010849A5
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JP
Japan
Prior art keywords
wiring
impurity region
impurity
film
semiconductor films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007141450A
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English (en)
Japanese (ja)
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JP2008010849A (ja
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Publication date
Application filed filed Critical
Priority to JP2007141450A priority Critical patent/JP2008010849A/ja
Priority claimed from JP2007141450A external-priority patent/JP2008010849A/ja
Publication of JP2008010849A publication Critical patent/JP2008010849A/ja
Publication of JP2008010849A5 publication Critical patent/JP2008010849A5/ja
Withdrawn legal-status Critical Current

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JP2007141450A 2006-06-01 2007-05-29 半導体装置及び半導体装置の作製方法 Withdrawn JP2008010849A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007141450A JP2008010849A (ja) 2006-06-01 2007-05-29 半導体装置及び半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006153548 2006-06-01
JP2007141450A JP2008010849A (ja) 2006-06-01 2007-05-29 半導体装置及び半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2008010849A JP2008010849A (ja) 2008-01-17
JP2008010849A5 true JP2008010849A5 (zh) 2010-06-17

Family

ID=39068726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007141450A Withdrawn JP2008010849A (ja) 2006-06-01 2007-05-29 半導体装置及び半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2008010849A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038584A1 (en) 2008-09-30 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5349945B2 (ja) 2008-12-25 2013-11-20 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4332244B2 (ja) * 1998-10-30 2009-09-16 シャープ株式会社 Mos型容量素子
JP2001007292A (ja) * 1999-06-24 2001-01-12 Sanyo Electric Co Ltd 半導体集積回路およびその配置方法
JP4916658B2 (ja) * 2003-12-19 2012-04-18 株式会社半導体エネルギー研究所 半導体装置

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