JP5349945B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5349945B2 JP5349945B2 JP2008329711A JP2008329711A JP5349945B2 JP 5349945 B2 JP5349945 B2 JP 5349945B2 JP 2008329711 A JP2008329711 A JP 2008329711A JP 2008329711 A JP2008329711 A JP 2008329711A JP 5349945 B2 JP5349945 B2 JP 5349945B2
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Images
Classifications
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- G—PHYSICS
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- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0701—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
Description
Design and Implementation of a Low−power Baseband−system for RFID Tag(2007 IEEE International Symposium on Circuits and Systems(ページ:1585−1588))
以下に、本発明の一実施形態を示す。ここでは、本発明の一態様の無線通信可能な半導体装置の代表的な例としてパッシブ型RFIDタグを挙げる。
本実施の形態では、上記実施の形態で示した半導体装置を得るための一作製方法を説明する。
本実施の形態では、半導体装置の分断工程の一形態を説明する。なお分断工程は半導体装置間、つまり周辺部が示された図13、図14を用いて説明する。
本実施の形態では、上記実施の形態1および2で説明した本発明の半導体装置の使用形態の一例について説明する。
101 周辺領域
101a 周辺領域
102a 領域
200 信号
201 信号
300 アンテナ
301 整流回路
302 復調回路
303 発振回路
304 同期回路
305 復号回路
306 レジスタ
307 定電圧回路
400 交流信号
402 符号化信号
403 クロック信号
404 符号化信号
405 受信情報信号
500 信号
701 基板
702 剥離層
703 絶縁膜
704 半導体膜
704a 半導体膜
704b 半導体膜
705 ゲート絶縁膜
706a チャネル形成領域
706b 不純物領域
706c 不純物領域
707 ゲート電極
708 絶縁膜
709 絶縁膜
710 絶縁膜
711 絶縁膜
712 絶縁膜
713 絶縁膜
714 開口部
715 領域
717 導電膜
718 絶縁膜
720 アンテナ
721 導電膜
722 導電膜
723 絶縁膜
726 構造体
727 繊維体
728 有機樹脂
729 導電層
730a 薄膜トランジスタ
730b 薄膜トランジスタ
731a 導電膜
731b 導電膜
732 構造体
733 繊維体
734 有機樹脂
735 導電層
740 領域
741 領域
742 領域
749 素子層
750 衝撃緩和層
751 絶縁体
752 衝撃緩和層
753 絶縁体
Claims (4)
- 第1乃至第6の回路を有し、
前記第1の回路は、第1の信号に応じて電圧を生成する機能を有し、
前記第2の回路は、前記第1の信号を復調して第2の信号を出力する機能を有し、
前記第3の回路は、前記電圧に応じて第3の信号を生成する機能を有し、
前記第4の回路は、前記第2の信号を前記第3の信号に同期させて第4の信号を出力する機能を有し、
前記第5の回路は、前記第4の信号を復号して第5の信号を出力する機能を有し、
前記第6の回路は、前記第4の信号をクロックとして前記第5の信号を記憶する機能を有し、
前記第1の信号は、交流信号であり、
前記電圧は、直流電圧であり、
前記2の信号は、符号化信号であり、
前記第3の信号は、前記第1の信号の周波数よりも遅く、且つ前記第2の信号を復号することができる周波数を有する一定のクロック信号であることを特徴とする半導体装置。 - 第1乃至第6の回路を有し、
前記第1の回路は、第1の信号に応じて電圧を生成する機能を有し、
前記第2の回路は、前記第1の信号を復調して第2の信号を出力する機能を有し、
前記第3の回路は、前記電圧に応じて第3の信号を生成する機能を有し、
前記第4の回路は、前記第2の信号を前記第3の信号に同期させて第4の信号を出力する機能を有し、
前記第5の回路は、前記第4の信号を復号して第5の信号を出力する機能を有し、
前記第6の回路は、前記第4の信号を遅延させた信号をクロックとして前記第5の信号を記憶する機能を有し、
前記第1の信号は、交流信号であり、
前記電圧は、直流電圧であり、
前記2の信号は、符号化信号であり、
前記第3の信号は、前記第1の信号の周波数よりも遅く、且つ前記第2の信号を復号することができる周波数を有する一定のクロック信号であることを特徴とする半導体装置。 - 受信した搬送波を交流信号に変換するアンテナと、
前記交流信号を直流電圧に整流する整流回路と、
前記交流信号を符号化信号に復調する復調回路と、
前記直流電圧の供給により前記第1の信号の周波数よりも遅く且つ前記第2の信号を復号することができる一定の周波数のクロック信号を生成する発振回路と、
前記符号化信号を前記クロック信号と同期させ同期済み符号化信号を生成する同期回路と、
前記同期済み符号化信号を復号信号に復号する復号回路と、
前記同期済み符号化信号をクロックとして、前記復号信号を記憶するレジスタと、を有することを特徴とする半導体装置。 - 請求項3において、
前記レジスタは、前記同期済み符号化信号を遅延させた信号をクロックとして、前記復号信号を記憶することを特徴とする半導体装置。
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JP2008329711A JP5349945B2 (ja) | 2008-12-25 | 2008-12-25 | 半導体装置 |
PCT/JP2009/071197 WO2010074010A1 (en) | 2008-12-25 | 2009-12-15 | Semiconductor device, electronic appliance using semiconductor device, and document using semiconductor device |
KR1020117016862A KR101617011B1 (ko) | 2008-12-25 | 2009-12-15 | 반도체 장치, 반도체 장치를 이용한 전자기기 및 반도체 장치를 이용한 증서 |
US12/645,082 US8803663B2 (en) | 2008-12-25 | 2009-12-22 | Semiconductor device, electronic appliance using semiconductor device, and document using semiconductor device |
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JP2008329711A JP5349945B2 (ja) | 2008-12-25 | 2008-12-25 | 半導体装置 |
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US (1) | US8803663B2 (ja) |
JP (1) | JP5349945B2 (ja) |
KR (1) | KR101617011B1 (ja) |
WO (1) | WO2010074010A1 (ja) |
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JP5455753B2 (ja) * | 2009-04-06 | 2014-03-26 | 株式会社半導体エネルギー研究所 | Icカード |
TWI583187B (zh) * | 2013-07-30 | 2017-05-11 | 聯詠科技股份有限公司 | 資料處理方法及裝置 |
TWI572153B (zh) * | 2014-04-29 | 2017-02-21 | 立錡科技股份有限公司 | 單傳輸線傳輸介面與單傳輸線傳輸方法以及使用單傳輸線傳輸方法之電源供應系統 |
US10096631B2 (en) | 2015-11-30 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and semiconductor device including the signal processing circuit |
CN114884467B (zh) * | 2022-07-01 | 2022-09-27 | 浙江地芯引力科技有限公司 | 一种信号解调装置及无线充电设备 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07351B2 (ja) | 1987-07-22 | 1995-01-11 | 株式会社レザック | シ−ト型押し装置 |
US4947407A (en) | 1989-08-08 | 1990-08-07 | Siemens-Pacesetter, Inc. | Sample-and-hold digital phase-locked loop for ask signals |
US5289580A (en) * | 1991-05-10 | 1994-02-22 | Unisys Corporation | Programmable multiple I/O interface controller |
JPH10107859A (ja) | 1996-09-27 | 1998-04-24 | Omron Corp | データ伝送方法、書込/読出制御ユニット及びデータキャリア |
JP2003244014A (ja) | 2002-02-15 | 2003-08-29 | Yozan Inc | 携帯端末 |
KR20040008896A (ko) * | 2002-07-19 | 2004-01-31 | (주) 젠터닷컴 | 시청률 조사장치 및 방법 |
KR100584328B1 (ko) * | 2003-10-07 | 2006-05-26 | 삼성전자주식회사 | 무선주파수 식별 태그가 결합된 이동 단말 회로 및 그이동 단말기에서의 무선 식별 방법 |
US7494066B2 (en) * | 2003-12-19 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7577223B2 (en) * | 2004-06-03 | 2009-08-18 | Silicon Laboratories Inc. | Multiplexed RF isolator circuit |
US8049573B2 (en) * | 2004-06-03 | 2011-11-01 | Silicon Laboratories Inc. | Bidirectional multiplexed RF isolator |
JP4519599B2 (ja) | 2004-10-07 | 2010-08-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
DE102005019568B4 (de) * | 2005-04-27 | 2010-04-15 | Infineon Technologies Ag | Speichereinrichtung, Verwendung derselben und Verfahren zur Synchronisation eines Datenwortes |
US20090129593A1 (en) * | 2005-05-30 | 2009-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for operating the same |
KR101177555B1 (ko) * | 2006-02-01 | 2012-08-27 | 삼성전자주식회사 | 메모리 카드, 메모리 카드의 데이터 구동 방법, 그리고메모리 카드 시스템 |
US7693244B2 (en) * | 2006-03-31 | 2010-04-06 | Intel Corporation | Encoding, clock recovery, and data bit sampling system, apparatus, and method |
JP2008010849A (ja) | 2006-06-01 | 2008-01-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
EP1863090A1 (en) * | 2006-06-01 | 2007-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US7581073B2 (en) * | 2006-08-09 | 2009-08-25 | International Business Machines Corporation | Systems and methods for providing distributed autonomous power management in a memory system |
EP1986070B1 (en) * | 2007-04-27 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Clock signal generation circuit and semiconductor device |
US20100005218A1 (en) * | 2008-07-01 | 2010-01-07 | International Business Machines Corporation | Enhanced cascade interconnected memory system |
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WO2010074010A1 (en) | 2010-07-01 |
KR20110104065A (ko) | 2011-09-21 |
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