JP2008010849A5

JP2008010849A5 -

Info

Publication number: JP2008010849A5
Application number: JP2007141450A
Authority: JP
Filing date: 2007-05-29
Publication date: 2010-06-17

Claims

It has an analog circuit part and a digital circuit part,
The analog circuit unit includes a capacitor unit including a plurality of blocks each composed of a plurality of capacitor elements,
Each of the plurality of capacitor elements includes a first impurity region, a semiconductor film having a plurality of second impurity regions provided across the first impurity region, and a first impurity region above the first impurity region. A conductive film provided through an insulating film,
The plurality of capacitive elements are connected in parallel to each other,
In the plurality of blocks, the shortest distance between semiconductor films provided in blocks adjacent to each other is 20 μm or more and 200 μm or less.

Each have a capacitance portion comprising a plurality of blocks including a plurality of capacitive elements,
Each of said plurality of capacitive elements, a first impurity region, and a semiconductor film having a second impurity area plurality of which are provided across the first impurity region, above the first impurity region And a conductive film provided via an insulating film,
Before SL plurality of capacitive elements is a semiconductor device characterized by being connected in parallel with each other.

Includes a plurality of blocks including a plurality of capacitive elements respectively, a first wiring, a capacitor portion having a second wiring,
Each of said plurality of capacitive elements, a first impurity region, and a semiconductor film having a second impurity area plurality of which are provided across the first impurity region, above the first impurity region And a conductive film provided via an insulating film,
The conductive layer provided on each of front Symbol plurality of capacitor elements are electrically connected to each other through the first wiring,
The semiconductor device, wherein the plurality of second impurity regions provided in each of the plurality of capacitors are electrically connected to each other through the second wiring.

In claim 3 ,
The semiconductor device is characterized in that the first wiring is provided with a material whose resistance is lower than that of the conductive film.

In claim 3 or 4 ,
The semiconductor device, wherein the first wiring and the second wiring are provided on the same surface.

In any one of claims 2 to 5,
In the plurality of blocks, the shortest distance between semiconductor films provided in blocks adjacent to each other is 20 μm or more and 200 μm or less.

In any one of Claims 1 thru | or 6 ,
Each of the first impurity region and the second impurity region includes an n-type impurity element or a p-type impurity element,
The concentration of the impurity element contained in the first impurity region, wherein a smaller than the concentration of the impurity element contained in the second impurity regions.

In any one of claims 1 to 7,
It said plurality of said plurality of capacitive elements provided in the block, wherein a are connected in parallel to each other.

Forming a plurality of blocks having a plurality of semiconductor films on a substrate;
Introducing a first impurity element into the plurality of semiconductor films to form a first impurity region;
Forming a first insulating film so as to cover the plurality of semiconductor films;
A conductive film is selectively formed on each of the plurality of semiconductor films through the first insulating film so as to cover a part of the semiconductor film,
A second impurity region is formed in a region that does not overlap the conductive film by introducing a second impurity element into the plurality of semiconductor films using the conductive film as a mask;
Forming a second insulating film so as to cover the plurality of semiconductor films and the conductive film;
Forming a first wiring electrically connected to the conductive film and a second wiring electrically connected to the second impurity region on the second insulating film;
The first wiring is provided so that the conductive films respectively formed above the plurality of semiconductor films are electrically connected to each other,
The method for manufacturing a semiconductor device, wherein the second wiring is provided so that the second impurity regions formed in the plurality of semiconductor films are electrically connected to each other.

Forming a semiconductor film on the substrate;
Irradiating the semiconductor film with a laser beam to form a crystalline semiconductor film,
Selectively etching the crystalline semiconductor film to form a plurality of blocks having a plurality of crystalline semiconductor films ;
Introducing a first impurity element into the plurality of crystalline semiconductor films to form a first impurity region;
Forming a first insulating film so as to cover the plurality of crystalline semiconductor films;
A conductive film is selectively formed on each of the plurality of crystalline semiconductor films via the first insulating film so as to cover a part of the crystalline semiconductor film,
Introducing a second impurity element into the plurality of crystalline semiconductor films using the conductive film as a mask to form a second impurity region in a region not overlapping the conductive film;
Forming a second insulating film so as to cover the plurality of crystalline semiconductor films and the conductive film;
Forming a first wiring electrically connected to the conductive film and a second wiring electrically connected to the second impurity region on the second insulating film;
The first wiring is provided so that the conductive films respectively formed above the plurality of crystalline semiconductor films are electrically connected to each other.
The method for manufacturing a semiconductor device, wherein the second wiring is provided so that the second impurity regions respectively formed in the plurality of crystalline semiconductor films are electrically connected to each other.

In claim 9 or 10 ,
The method for manufacturing a semiconductor device, wherein the first wiring is formed using a material having lower resistance than the conductive film.

In any one of claims 9 to 11,
A manufacturing method of a semiconductor device, wherein, in the plurality of blocks, a shortest distance between semiconductor films provided in blocks adjacent to each other is set to 20 μm to 200 μm.