JP2007538405A - 半導体処理におけるマイクロコンタミネーションの削減 - Google Patents
半導体処理におけるマイクロコンタミネーションの削減 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
Abstract
【選択図】 図4
Description
Claims (15)
- 基板の上に膜を堆積させる方法であって、
プロセスガスをプロセスチャンバに流すステップであって、該プロセスガスがシリコン含有ガスと酸素含有ガスを含む前記ステップと、
流動性ガスを該プロセスチャンバに流すステップであって、該流動性ガスがヘリウム流と分子水素流を含み、該分子水素流が該ヘリウムの流量の20%未満の流量で供給される前記ステップと、
該プロセスガスと流動性ガスから該プロセスチャンバ内でプラズマを形成するステップであって、該プラズマが1011イオン/cm3を超える密度を有する前記ステップと、
該プラズマにより該基板の上に該膜を堆積させるステップと、
を含む、前記方法。 - 該分子水素流が該ヘリウムの該流量の10%未満の流量で供給される、請求項1記載の方法。
- 該分子水素流が該ヘリウムの該流量の5%未満の流量で供給される、請求項1記載の方法。
- 該流動性ガスが、不活性ガスの流れを該ヘリウムの流量の10%未満の流量で更に含む、請求項1記載の方法。
- 該ヘリウムの該流量が100〜1000sccmである、請求項1記載の方法。
- 該基板に負バイアスを加えるステップを更に含む、請求項1記載の方法。
- 該プロセスチャンバの内圧が10ミリトールに維持される、請求項1記載の方法。
- 該シリコン含有ガスがSiH4を含む、請求項1記載の方法。
- 該酸素含有ガスがO2を含む、請求項1記載の方法。
- 隣接する隆起特徴部を有する基板の上に膜を堆積させて、該隣接する隆起特徴部間のギャップを充填する方法であって、該ギャップが90〜150nmの幅を有する前記方法であって、
プロセスガスをプロセスチャンバに流すステップであって、該プロセスガスがシリコン含有ガスと酸素含有ガスを含む前記ステップと、
流動性ガスを該プロセスチャンバに流すステップであって、該流動性ガスがヘリウム流と分子水素流を含み、該分子水素流が該ヘリウムの流量の10%未満の流量で供給される前記ステップと、
該プロセスガスと流動性ガスから該プロセスチャンバ内でプラズマを形成するステップであって、該プラズマが1011イオン/cm3を超える密度を有する前記ステップと、
該プロセスチャンバの内圧を10ミリトール未満に維持するステップと、
該プラズマにより該ギャップに該膜を堆積させるステップと、
を含む、前記方法。 - 該分子水素流が、該ヘリウムの該流量の10%未満の流量で供給される、請求項10記載の方法。
- 該ヘリウムの該流量が100〜1000sccmである、請求項10記載の方法。
- 該ヘリウムの該流量が300〜500sccmである、請求項10記載の方法。
- 該シリコン含有ガスがSiH4を含み、該酸素含有ガスがO2を含む、請求項10記載の方法。
- 隣接する隆起特徴部を有する基板の上にドープされていないケイ酸塩ガラス膜を堆積させて、該隣接する隆起特徴部間のギャップを充填する方法であって、
SiH4、O2、He、H2をプロセスチャンバに流すステップであって、該Heが100〜1000sccmの流量で供給され、該H2が該Heの該流量の20%未満の流量で供給される前記ステップと、
該プロセスチャンバに流されるガスからプラズマを形成させるステップであって、該プラズマが1011イオン/cm3を超える密度を有する前記ステップと、
該プロセスチャンバの内圧を10ミリトール未満に維持するステップと、
該プラズマにより該ギャップに該ドープされていないケイ酸塩ガラス膜を堆積させるステップと、
を含む、前記方法。
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US10/847,922 US20050260356A1 (en) | 2004-05-18 | 2004-05-18 | Microcontamination abatement in semiconductor processing |
US10/847,922 | 2004-05-18 | ||
PCT/US2005/014506 WO2005117088A1 (en) | 2004-05-18 | 2005-04-27 | Microcontamination abatement in semiconductor processing |
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JP2007538405A true JP2007538405A (ja) | 2007-12-27 |
JP4808716B2 JP4808716B2 (ja) | 2011-11-02 |
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JP (1) | JP4808716B2 (ja) |
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CN (1) | CN100501940C (ja) |
TW (1) | TWI278531B (ja) |
WO (1) | WO2005117088A1 (ja) |
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JP5792438B2 (ja) * | 2010-08-12 | 2015-10-14 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
CN106435470A (zh) * | 2016-11-09 | 2017-02-22 | 上海华力微电子有限公司 | 一种实现自动清洗的烘烤腔结构及其自动清洗方法 |
CN108062069A (zh) * | 2018-01-25 | 2018-05-22 | 无锡盈芯半导体科技有限公司 | 用于二硫化钼cvd设备的控制系统 |
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- 2005-04-27 CN CNB200580015462XA patent/CN100501940C/zh not_active Expired - Fee Related
- 2005-04-27 KR KR1020067025894A patent/KR101171127B1/ko not_active IP Right Cessation
- 2005-04-27 WO PCT/US2005/014506 patent/WO2005117088A1/en active Application Filing
- 2005-05-11 TW TW094115270A patent/TWI278531B/zh not_active IP Right Cessation
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Also Published As
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TW200538578A (en) | 2005-12-01 |
TWI278531B (en) | 2007-04-11 |
KR101171127B1 (ko) | 2012-08-03 |
US20050260356A1 (en) | 2005-11-24 |
CN100501940C (zh) | 2009-06-17 |
CN1954415A (zh) | 2007-04-25 |
WO2005117088A1 (en) | 2005-12-08 |
KR20070011587A (ko) | 2007-01-24 |
JP4808716B2 (ja) | 2011-11-02 |
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