JP2007535697A5 - - Google Patents

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Publication number
JP2007535697A5
JP2007535697A5 JP2007509510A JP2007509510A JP2007535697A5 JP 2007535697 A5 JP2007535697 A5 JP 2007535697A5 JP 2007509510 A JP2007509510 A JP 2007509510A JP 2007509510 A JP2007509510 A JP 2007509510A JP 2007535697 A5 JP2007535697 A5 JP 2007535697A5
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JP
Japan
Prior art keywords
scf
composition
ion
substrate
implanted photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007509510A
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English (en)
Japanese (ja)
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JP2007535697A (ja
Filing date
Publication date
Priority claimed from US10/827,395 external-priority patent/US7557073B2/en
Application filed filed Critical
Publication of JP2007535697A publication Critical patent/JP2007535697A/ja
Publication of JP2007535697A5 publication Critical patent/JP2007535697A5/ja
Pending legal-status Critical Current

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JP2007509510A 2004-04-19 2005-04-12 イオン注入されたフォトレジストを除去するための非フッ化物含有超臨界流体組成物 Pending JP2007535697A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/827,395 US7557073B2 (en) 2001-12-31 2004-04-19 Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
PCT/US2005/012301 WO2005104682A2 (en) 2004-04-19 2005-04-12 Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist

Publications (2)

Publication Number Publication Date
JP2007535697A JP2007535697A (ja) 2007-12-06
JP2007535697A5 true JP2007535697A5 (https=) 2008-05-29

Family

ID=35242115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007509510A Pending JP2007535697A (ja) 2004-04-19 2005-04-12 イオン注入されたフォトレジストを除去するための非フッ化物含有超臨界流体組成物

Country Status (7)

Country Link
US (1) US7557073B2 (https=)
EP (1) EP1749087A2 (https=)
JP (1) JP2007535697A (https=)
KR (1) KR20060135037A (https=)
CN (1) CN101098954A (https=)
TW (1) TW200609347A (https=)
WO (1) WO2005104682A2 (https=)

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US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
CN101920929A (zh) * 2010-06-30 2010-12-22 上海集成电路研发中心有限公司 半导体悬臂结构的制造方法
US8551257B2 (en) 2010-08-06 2013-10-08 Empire Technology Development Llc Supercritical noble gases and cleaning methods
WO2012018351A1 (en) 2010-08-06 2012-02-09 Empire Technology Development Llc Supercritical noble gases and coloring methods
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US9004172B2 (en) 2011-09-01 2015-04-14 Empire Technology Development Llc Systems, materials, and methods for recovering material from bedrock using supercritical argon compositions
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
JP6363116B2 (ja) 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102338526B1 (ko) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
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TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
KR102352475B1 (ko) 2013-12-20 2022-01-18 엔테그리스, 아이엔씨. 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도
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TWI659098B (zh) 2014-01-29 2019-05-11 Entegris, Inc. 化學機械研磨後配方及其使用方法
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
US20160230080A1 (en) * 2015-02-05 2016-08-11 Esam Z. Hamad Viscous carbon dioxide composition and method of making and using a viscous carbon dioxide composition

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