JP2007534149A - Ｇｅベース材料上のゲルマニウム酸窒化物層の生成 - Google Patents

Ｇｅベース材料上のゲルマニウム酸窒化物層の生成 Download PDF

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JP2007534149A
JP2007534149A JP2006527418A JP2006527418A JP2007534149A JP 2007534149 A JP2007534149 A JP 2007534149A JP 2006527418 A JP2006527418 A JP 2006527418A JP 2006527418 A JP2006527418 A JP 2006527418A JP 2007534149 A JP2007534149 A JP 2007534149A
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nitrogen
gate dielectric
concentration
layer
germanium oxynitride
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JP2007534149A5 (https=
Inventor
ゴーセフ、エフゲニー
シャン、フイリン
デミック、クリストファ
コズロウスキ、ポール
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01356—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H10P14/6522—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen introduced into a nitride material, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP2006527418A 2003-09-27 2004-09-23 Ｇｅベース材料上のゲルマニウム酸窒化物層の生成 Pending JP2007534149A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/672,631 US7078300B2 (en) 2003-09-27 2003-09-27 Thin germanium oxynitride gate dielectric for germanium-based devices
US10/672,631 2003-09-27
PCT/EP2004/052283 WO2005031809A2 (en) 2003-09-27 2004-09-23 The production of a germanium oxynitride layer on a ge-based material

Publications (2)

Publication Number Publication Date
JP2007534149A true JP2007534149A (ja) 2007-11-22
JP2007534149A5 JP2007534149A5 (https=) 2008-01-10

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JP2006527418A Pending JP2007534149A (ja) 2003-09-27 2004-09-23 Ｇｅベース材料上のゲルマニウム酸窒化物層の生成

Country Status (8)

Country Link
US (2) US7078300B2 (https=)
EP (1) EP1671356A2 (https=)
JP (1) JP2007534149A (https=)
KR (1) KR100843497B1 (https=)
CN (1) CN100514577C (https=)
IL (1) IL174503A (https=)
TW (1) TWI338340B (https=)
WO (1) WO2005031809A2 (https=)

Cited By (2)

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JP2010067917A (ja) * 2008-09-12 2010-03-25 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置
JP2016121403A (ja) * 2013-04-11 2016-07-07 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 多成分膜の製造方法

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US7517818B2 (en) 2005-10-31 2009-04-14 Tokyo Electron Limited Method for forming a nitrided germanium-containing layer using plasma processing
US7517812B2 (en) 2005-10-31 2009-04-14 Tokyo Electron Limited Method and system for forming a nitrided germanium-containing layer using plasma processing
US20080274626A1 (en) * 2007-05-04 2008-11-06 Frederique Glowacki Method for depositing a high quality silicon dielectric film on a germanium substrate with high quality interface
US20090065816A1 (en) * 2007-09-11 2009-03-12 Applied Materials, Inc. Modulating the stress of poly-crystaline silicon films and surrounding layers through the use of dopants and multi-layer silicon films with controlled crystal structure
EP2161742A1 (en) * 2008-09-03 2010-03-10 S.O.I.TEC. Silicon on Insulator Technologies S.A. Method for Fabricating a Locally Passivated Germanium-on-Insulator Substrate
US9245805B2 (en) * 2009-09-24 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs with metal gates and stressors
US8809152B2 (en) * 2011-11-18 2014-08-19 International Business Machines Corporation Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices
US9136383B2 (en) 2012-08-09 2015-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
TWI531071B (zh) 2014-07-08 2016-04-21 國立中央大學 Fabrication method of gold - oxygen half - gate stacking structure
US10367080B2 (en) * 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film

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JPN6010051238, Ｈ． Ｓｈａｎｇ， Ｈ． Ｏｋｏｒｎ−Ｓｃｈｉｍｄｔ， Ｊ． Ｏｔｔ， Ｐ． Ｋｏｚｌｏｗｓｋｉ， Ｓ． Ｓｔｅｅｎ， Ｅ． Ｃ． Ｊｏｎｅｓ， Ｈ．−Ｓ． Ｐ．Ｗｏｎｇ， ａｎｄ Ｗ． Ｈａｎｅｓｃ, "Ｅｌｅｃｔｒｉｃａｌ ｃｈａｒａｃｔｅｒｉｚａｔｉｏｎ ｏｆ ｇｅｒｍａｎｉｕｍ ｐ−ｃｈａｎｎｅｌ ＭＯＳＦＥＴｓ", Ｅｌｅｃｔｒｏｎ Ｄｅｖｉｃｅ Ｌｅｔｔｅｒｓ， ＩＥＥＥ, 200304, ＶＯＬ．２４， Ｎｏ．４, ２４２−２４４ *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067917A (ja) * 2008-09-12 2010-03-25 Sumitomo Electric Ind Ltd 半導体装置の製造方法および半導体装置
JP2016121403A (ja) * 2013-04-11 2016-07-07 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 多成分膜の製造方法

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CN1836318A (zh) 2006-09-20
WO2005031809A3 (en) 2005-06-23
TWI338340B (en) 2011-03-01
US7078300B2 (en) 2006-07-18
CN100514577C (zh) 2009-07-15
KR20060126912A (ko) 2006-12-11
EP1671356A2 (en) 2006-06-21
US20050070122A1 (en) 2005-03-31
IL174503A0 (en) 2006-08-01
IL174503A (en) 2010-12-30
US20060202279A1 (en) 2006-09-14
WO2005031809A2 (en) 2005-04-07
KR100843497B1 (ko) 2008-07-04
TW200518238A (en) 2005-06-01

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