JP2007534136A - 接点の製作方法とその接点を持つ電子部品 - Google Patents
接点の製作方法とその接点を持つ電子部品 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 128
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 33
- 230000000415 inactivating effect Effects 0.000 claims abstract description 33
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 15
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 9
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 135
- 239000002184 metal Substances 0.000 claims description 135
- 239000004065 semiconductor Substances 0.000 claims description 93
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 63
- 229910052710 silicon Inorganic materials 0.000 claims description 63
- 239000010703 silicon Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 26
- 230000009849 deactivation Effects 0.000 claims description 23
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 19
- 229910052798 chalcogen Inorganic materials 0.000 claims description 18
- 150000001787 chalcogens Chemical class 0.000 claims description 18
- 239000011669 selenium Substances 0.000 claims description 15
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 239000011593 sulfur Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 238000010348 incorporation Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910006585 β-FeSi Inorganic materials 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910019974 CrSi Inorganic materials 0.000 claims 1
- 229910017028 MnSi Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000007704 transition Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 208
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 230000006870 function Effects 0.000 description 16
- 229910052732 germanium Inorganic materials 0.000 description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 14
- 230000002779 inactivation Effects 0.000 description 14
- 229910008310 Si—Ge Inorganic materials 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000002513 implantation Methods 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 239000012141 concentrate Substances 0.000 description 6
- 229910005883 NiSi Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910019001 CoSi Inorganic materials 0.000 description 4
- 229910005742 Ge—C Inorganic materials 0.000 description 4
- 229910008484 TiSi Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- -1 TiSi 2 Chemical class 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910005329 FeSi 2 Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 241000120020 Tela Species 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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Abstract
Description
Kaziras, Phys. Rev. B43, 6824(1991) Tao et al., Appl. Phys. Lett. 82, 1559(2003) Rashba E. I., Fiz. Tverd. Tela (Leningrad) (1960), Sov. Phys. Solid State 2, 1109ff Guo, J. und Lundstrom, M.S. (2002). IEEE Trans. Electron Devices 49, 1897ff
・第一の層としての半導体−ケイ化物と隣接層としての半導体層との間
・第一の層としての金属−ケイ化物/金属−ゲルマニウム化物と隣接層としての半導体層又は絶縁体との間
・純粋な金属と絶縁体との間
この方法は、マスクを用いた形で実施することができる。こうすることによって、有利には、接点の製作を、横方向に対して制限するものである。
第一の層としての金属ケイ化物5と隣接層としての半導体層1の間に、不活性化した接点を形成するために、先ずは、特に純粋なシリコンから成る、シリコンを含有する半導体基板1上に、例えばSiO2 から成る、マスク2を堆積させる(図1a))。更に、この注入マスク2を用いて、接点の製作を、横方向に対して制限している。
第一の層としての金属ケイ化物25と隣接層としての半導体層21の間に不活性化した接点を形成するために、又もや、先ずは特に半導体としてのシリコンから成る半導体基板21上に、例えばSiO2 から成るマスク22を堆積させる(図2a))。更に、例えばSiO2 から成る注入マスク22を用いて、接点の製作を、横方向に対して制限している。
第一の層としての金属ケイ化物35と隣接層としての半導体層31の間に不活性化した接点を形成するために、又もや、先ずは特に半導体としてのシリコンから成る半導体基板31上に、例えばSiO2 から成るマスク32を堆積させる(図3a))。更に、例えばSiO2 から成る注入マスク32を用いて、接点の製作を、横方向に対して制限している。
第一の層としての金属ケイ化物45と隣接層としての半導体層41の間に不活性化したた接点を形成するために、又もや、先ずは特に半導体としてのシリコンから成る半導体基板41上に、例えばSiO2 から成るマスク42を堆積させる(図4a))。更に、例えばSiO2 から成る注入マスク42を用いて、接点の製作を、横方向に対して制限している。
それに続いて、この層46の上に、金属44を析出させる(図4c))。このために、例えばコバルト、ニッケル、チタン、プラチナ、タングステン、モリブデンのグループから選定した金属を、例えば5〜50ナノメートルの薄い層44として、不活性化層46の上に析出させる。
この発明による方法では、この方法により金属ゲートの仕事関数を調節することも可能である。第一の層としての金属又は金属ケイ化物は、ゲート接点として用いられており、その仕事関数は、隣接層としての誘電体57との境界面におけるカルコゲンを用いて調節することができる。
半導体基板69上において、第一の層としての金属ケイ化物65と隣接層としての絶縁体67との間に不活性化した接点を形成するために、先ずは誘電体67を、次にアモルファスシリコン又はポリシリコン、或いはこれらに代わってポリSi−Ge層68を、その次にその上に金属64を順番に析出させる(図6a))。ポリゲート材料68に対して、不活性化元素を析出させるか、或いはこの材料内に注入することもできる(図示していない)。層68と64は、形成しようとしているケイ化物65のシリコン成分及び金属成分を有する。
図7は、不活性化によりソース及びドレイン接点のショットキー障壁を負としたショットキー障壁MOSFETの製作を図示している。
特に有利には、ショットキー障壁を製作するために、SOIの標準的なシリコン層の代わりに、SiO2 79上における歪シリコン又はSi−Ge、Si−Ge−C71を用いることができる。
2,22,32,42 例えば、SiO2 、Si3 N4 等から成るマスク
4,34,44,64 金属ケイ化物を形成するための金属
5,25,35,45,55,65,75a,75b 第一の層としての金属ケイ化物
6 不活性化元素を備えた領域
6a,6b,26a,26b,36a,36b,46a,46b,66a,76a,76b 金属ケイ化物と半導体層との間の不活性化した境界面
46 不活性化層
57,67,77 隣接層としてのゲート誘電体(SiO2 、Si3 N4 、高K材料)
68 (ポリ、アモルファス)シリコン又はSi−Ge
59,69,79 支持層、例えば、シリコン基板
71 隣接層としてのシリコン又は歪シリコン又はゲルマニウム半導体層、Si−Ge又はSi−Ge−C又はSi−C層
75a,75b ソース及びドレインとしての金属ケイ化物
76a,76b 金属ケイ化物と半導体との間の不活性化した境界面、ここではソース75a又はドレイン75bとチャネル領域71との間の各境界面
79 SiO2 又はSiGe
80 ゲート接点(ポリSi、ポリSiGe、金属、ケイ化物)
81a,81b スペーサー(SiO2 、Si3 N4 )
Claims (21)
- 第一の層(5;25;35;45;55;65;75a,75b)とそれに隣接する層(1,21,31,41,71;57,67,77)との間に接点を製作する方法において、
不活性化元素を、第一の層(25;55)と隣接層(1;21;31;41)の両方又は一方の中又は上に、或いはこれらの層(34,54,64;68,71)の出発成分の中に、イオン注入によって組み入れるか、或いは析出によって堆積させることと、
この不活性化元素を、温度処理によって、少なくとも第一の層の隣接層との境界面(6a,6b;26a,26b;36a,36b;46a,46b;66a;76a,76b)において濃縮させることとを特徴とする方法。 - ケイ化物(5;25;35;45;55;65;75a,75b)とこのケイ化物に隣接する層(1,21,31,41,71;57,67,77)との間に接点を製作する方法において、
イオン注入による隣接層(1;21;31;41)の中への不活性化元素の組み入れ、析出による隣接層(1;21;31;41)の上への不活性化元素の堆積、ケイ化物(25;55)又はその金属成分(34;54;64)とシリコンを含有する成分(68,71)の両方又は一方の中への不活性化元素の組み入れの中の一つ以上を行うことと、
この不活性化元素を、温度処理によって、少なくともケイ化物の隣接層との境界面(6a,6b;26a,26b;36a,36b;46a,46b;66a;76a,76b)において濃縮させることとを特徴とする方法。 - 第一の層として、金属ケイ化物、半導体ケイ化物、金属ゲルマニウム化物、金属の中の一つを選定することを特徴とする請求項1又は2に記載の方法。
- 隣接層として、半導体層又は誘電体を選定することを特徴とする請求項1から3までのいずれか一つに記載の方法。
- 隣接層用の材料として、シリコンを選定することを特徴とする請求項1から4までのいずれか一つに記載の方法。
- 不活性化元素を、ケイ化物又はゲルマニウム化物の生成の前又は後に注入する、或いは析出させることを特徴とする請求項1から5までのいずれか一つに記載の方法。
- ケイ化物又はゲルマニウム化物を形成するために、少なくとも一回の温度処理を行うことを特徴とする請求項1から6までのいずれか一つに記載の方法。
- 温度処理によって、第一の層を形成するとともに、隣接層との境界面の不活性化を行うことを特徴とする請求項1から7までのいずれか一つに記載の方法。
- ケイ化物化の間に、第一の層と隣接層との間の境界面において、不活性化元素の濃縮を行うことを特徴とする請求項1から8までのいずれか一つに記載の方法。
- 不活性化元素として、カルコゲンを選定することを特徴とする請求項1から9までのいずれか一つに記載の方法。
- カルコゲンとして、セレン、硫黄、テルルの中の一つを選定することを特徴とする請求項1から10までのいずれか一つに記載の方法。
- 不活性化元素を、1012〜1016cm-2、特に1014〜1015cm-2の添加量で注入することを特徴とする請求項1から11までのいずれか一つに記載の方法。
- 金属ケイ化物又は金属ゲルマニウム化物の金属成分を、コバルト、ニッケル、チタン、白金、タングステン、モリブデンのグループの中から選定することを特徴とする請求項1から12までのいずれか一つに記載の方法。
- 第一の層としてのケイ化物のシリコン成分を、ポリシリコン又はアモルファスシリコンで構成することを特徴とする請求項1から13までのいずれか一つに記載の方法。
- 半導体ケイ化物として、β−FeSi2 、Ru2 Si3 、MnSix 、CrSi2 の中から選定することを特徴とする請求項1から14までのいずれか一つに記載の方法。
- 隣接層の上にマスクを配置することを特徴とする請求項1から15までのいずれか一つに記載の方法。
- 請求項1から16までのいずれか一つに記載の方法にもとづき製作された少なくとも一つの不活性化した金属−半導体又は金属−絶縁体接点を有する素子。
- 請求項17に記載の素子としての、ソース接点とドレイン接点の両方又は一方のショットキー障壁が調節可能である、特に負であるショットキー障壁MOSFET。
- シリコン厚が30ナノメートル以内である極めて薄いSOI基板上に、当該の接点が配置されていることを特徴とする請求項18に記載のショットキー障壁MOSFET。
- 請求項17から19までのいずれか一つに記載の素子としての、不活性化によって調節可能なゲート接点を持つMOSFET。
- 磁性を持つソース及びドレイン接点を形成するために、Mnか、Feか、Coをドーピングした半導体ケイ化物を第一の層として選定することを特徴とする請求項17に記載の素子としてのスピントランジスター。
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