JP2007533145A - 電力半導体回路 - Google Patents
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- JP2007533145A JP2007533145A JP2007507675A JP2007507675A JP2007533145A JP 2007533145 A JP2007533145 A JP 2007533145A JP 2007507675 A JP2007507675 A JP 2007507675A JP 2007507675 A JP2007507675 A JP 2007507675A JP 2007533145 A JP2007533145 A JP 2007533145A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000001816 cooling Methods 0.000 claims abstract description 23
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- 239000003507 refrigerant Substances 0.000 claims 1
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- 238000013461 design Methods 0.000 description 3
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- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
2 電力半導体モジュール
3 カバーバスバー
5 冷却装置
6 冷却剤
7 絶縁体
8 バスバー
9 絶縁層
10 バスバー
11 バスバーシステムパケット
12 中間キャパシタ
14 中間キャパシタ
15 ネジ結合
16 ネジ結合
20 基板
21 表面
22 部品
23 裏面
24 接続接触領域
25 フィルム
26 表面
27 接続接触領域
28 パッド
29 端
30 プリント回路基板
A 部分
Claims (17)
- 薄型組立部品の形式で、少なくとも1つの電子部品(22)が基板(20)上に配置されており、最上面において接触領域(27)を介してフィルム(25)のパッド(28)に接触接続された電力半導体モジュール(2)と、
電流を供給および/または消費し、1つのカバーバスバー(3)上に上記電力半導体モジュール(2)が配置されたバスバーシステム(11)と、
上記バスバーシステム(11)に一体化された冷却装置(5)とを含んでいる電力半導体回路。 - 上記冷却装置(5)は、直接カバーバスバー(3)を冷却する請求項1に記載の電力半導体回路。
- 上記冷却装置(5)は、空気冷却システムである請求項1または2に記載の電力半導体回路。
- 上記冷却装置(5)は、液体冷却システムである請求項1または2に記載の電力半導体回路。
- 液体冷媒(6)が電気的に絶縁している請求項4に記載の電力半導体回路。
- 上記バスバーシステム(11)は、平板状であって平行面上において絶縁されるように配置された複数の導体(3、8、10)を含んでいるバスバーシステムパケットである上記請求項のいずれか1項に記載の電力半導体回路。
- 平板状である上記導体(3、8、10)は、ラミネーションによって互いに接続されている請求項6に記載の電力半導体回路。
- 上記冷却装置は、平板状である上記バスバーの間に挟まれるようにして配置され、同様に平板状である請求項6または7に記載の電力半導体回路。
- 上記電子部品(22)は、裏面上の接触領域(24)を介して基板(20)に接続され、
上記基板(20)は、導電性材料を含んでいる上記請求項のいずれか1項に記載の電力半導体回路。 - 上記電力半導体モジュールの上方に薄型ユニット(30)の形式で配置された制御回路が備えられた上記請求項のいずれか1項に記載の電力半導体回路。
- 上記電力半導体モジュール(2)と上記バスバーシステム(11)とは、ネジ結合を用いることなく、互いに接続された上記請求項のいずれか1項に記載の電力半導体回路。
- 上記フィルム(25)は、上記カバーバスバー(3)の端(29)まで延びている上記請求項のいずれか1項に記載の電力半導体回路。
- 上記バスバーシステム(11)は、上記カバーバスバー(3)に加えて、少なくとも1つのさらなるバスバー(8、10)と、該さらなるバスバーまで延びている上記フィルム(25)を備えている請求項12に記載の電力半導体回路。
- 上記フィルム(25)は、少なくとも1つのさらなるバスバー(8、10)のパッドと接触接続している請求項13に記載の電力半導体回路。
- 上記請求項のいずれか1項に記載の電力半導体回路の製造方法であって、
最上面に接触領域(27)を備え、薄型組立部の形であって、少なくとも1つの電子部品(22)が基板(20)上に配置された電力半導体モジュール(2)と、電流を供給および/または消費し、上記電力半導体モジュール(2)が載置されたカバーバスバー(3)を備えたバスバーシステム(11)と、冷却装置(5)とを用意するステップと、
上記電力半導体モジュール(2)を、上記電力半導体モジュール(2)にラミネートされるフィルム(25)のパッド(28)に接触接続するために上記接触領域(27)を用いるステップとを含んでいる製造方法。 - 上記フィルム(25)は、バスバーシステム(11)のラミネーションと共にラミネートされる請求項15に記載の方法。
- 上記フィルム(25)は、バスバーシステム(11)のラミネーションと共に有効になる請求項16に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004018469A DE102004018469B3 (de) | 2004-04-16 | 2004-04-16 | Leistungshalbleiterschaltung |
PCT/EP2005/000962 WO2005109505A1 (de) | 2004-04-16 | 2005-02-01 | Leistungshalbleiterschaltung |
Publications (2)
Publication Number | Publication Date |
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JP2007533145A true JP2007533145A (ja) | 2007-11-15 |
JP4409600B2 JP4409600B2 (ja) | 2010-02-03 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007507675A Expired - Fee Related JP4409600B2 (ja) | 2004-04-16 | 2005-02-01 | 電力半導体回路及びその製造方法 |
Country Status (4)
Country | Link |
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US (1) | US7800213B2 (ja) |
JP (1) | JP4409600B2 (ja) |
DE (1) | DE102004018469B3 (ja) |
WO (1) | WO2005109505A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016500474A (ja) * | 2012-12-07 | 2016-01-12 | エービービー テクノロジー エルティーディー. | 半導体アセンブリ |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004018469B3 (de) | 2004-04-16 | 2005-10-06 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Leistungshalbleiterschaltung |
JP4909712B2 (ja) * | 2006-11-13 | 2012-04-04 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
DE102006058327B3 (de) | 2006-12-11 | 2008-05-15 | Siemens Ag | Stromschienenpaket |
DE102007003875A1 (de) * | 2007-01-25 | 2008-08-07 | Siemens Ag | Stromrichter |
DE102008061489A1 (de) | 2008-12-10 | 2010-06-17 | Siemens Aktiengesellschaft | Stromrichtermodul mit gekühlter Verschienung |
DE102008061488A1 (de) | 2008-12-10 | 2010-06-17 | Siemens Aktiengesellschaft | Stromrichtermodul mit gekühlter Verschienung |
DE102008061468A1 (de) | 2008-12-10 | 2010-06-17 | Siemens Aktiengesellschaft | Stromrichtermodul mit gekühlter Verschienung |
DE102009029476B4 (de) | 2009-09-15 | 2012-11-08 | Lisa Dräxlmaier GmbH | Elektronische Vorrichtung zum Schalten von Strömen und Herstellungsverfahren für dieselbe |
US20110134607A1 (en) * | 2009-12-07 | 2011-06-09 | Schnetker Ted R | Solid state switch arrangement |
EP2675053A4 (en) * | 2011-02-10 | 2015-01-07 | Mitsubishi Electric Corp | DEVICE FOR CONVERTING ELECTRICAL ENERGY |
DE102011076273A1 (de) | 2011-05-23 | 2012-11-29 | Continental Automotive Gmbh | Leiterplatte für elektrische Bauelemente und Leiterplattensystem |
AT512525B1 (de) * | 2012-05-04 | 2013-09-15 | Mikroelektronik Ges Mit Beschraenkter Haftung Ab | Leiterplatte, insbesondere für ein Leistungselektronikmodul, umfassend ein elektrisch leitfähiges Substrat |
DE102013203532A1 (de) | 2013-03-01 | 2014-09-04 | Magna Powertrain Ag & Co. Kg | Bauteilekühlung |
DE102014213784A1 (de) * | 2014-07-16 | 2016-01-21 | Siemens Aktiengesellschaft | Umrichter |
DE102015220792A1 (de) * | 2015-10-23 | 2017-04-27 | Zf Friedrichshafen Ag | Leistungselektronikanordnung |
DE102016200724A1 (de) | 2016-01-20 | 2017-07-20 | Robert Bosch Gmbh | Vorrichtung zur Kühlung mindestens einer Stromschiene und korrespondierende Leistungsschaltung |
JP6642088B2 (ja) * | 2016-02-18 | 2020-02-05 | 株式会社オートネットワーク技術研究所 | 電気機器 |
DE102016206234A1 (de) | 2016-04-14 | 2017-10-19 | Zf Friedrichshafen Ag | Stromschiene für einen Wechselrichter, Wechselrichter und Kraftfahrzeugantriebsystem |
DE102017101236B4 (de) | 2017-01-23 | 2018-11-15 | Sma Solar Technology Ag | Relaisanordnung mit verbesserter entwärmung und wandlervorrichtung mit einer solchen relaisanordnung |
AT520154B1 (de) * | 2017-07-03 | 2019-04-15 | Miba Frictec Gmbh | Akkumulator |
DE102018118525A1 (de) * | 2018-07-31 | 2020-02-06 | Valeo Siemens Eautomotive Germany Gmbh | Anordnung mit einer Stromschienenvorrichtung und einem Stromrichtergehäuse sowie Verfahren zu deren Herstellung, Stromrichter für ein Fahrzeug und Fahrzeug |
DE102019214218A1 (de) * | 2019-09-18 | 2021-03-18 | Zf Friedrichshafen Ag | Stromschienenanordnung für einen Stromrichter für ein zumindest teilweise elektrisch angetriebenes Fahrzeug |
DE102020208154A1 (de) * | 2020-06-30 | 2022-01-13 | Zf Friedrichshafen Ag | Leistungsmodul zum Betreiben eines Elektrofahrzeugantriebs mit einer verbesserten Temperaturbestimmung der Leistungshalbleiter |
DE102021115990B4 (de) | 2021-06-21 | 2023-01-05 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | Messanordnung |
EP4135029A1 (en) * | 2021-08-11 | 2023-02-15 | Hamilton Sundstrand Corporation | Power semiconductor cooling assembly |
DE102021210594B4 (de) | 2021-09-23 | 2023-08-31 | Vitesco Technologies Germany Gmbh | Leistungshalbleitermodul und Antriebsstrang für ein Fahrzeug aufweisend ein derartiges Leistungshalbleitermodul |
DE102022201266A1 (de) | 2022-02-08 | 2023-08-10 | Zf Friedrichshafen Ag | Leiteranordnung für einen Zwischenkreis |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4700273A (en) * | 1986-06-03 | 1987-10-13 | Kaufman Lance R | Circuit assembly with semiconductor expansion matched thermal path |
US5111280A (en) * | 1988-11-10 | 1992-05-05 | Iversen Arthur H | Thermal management of power conditioning systems |
DE19617055C1 (de) * | 1996-04-29 | 1997-06-26 | Semikron Elektronik Gmbh | Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise |
EP0884781A3 (en) * | 1997-06-12 | 1999-06-30 | Hitachi, Ltd. | Power semiconductor module |
US6060772A (en) * | 1997-06-30 | 2000-05-09 | Kabushiki Kaisha Toshiba | Power semiconductor module with a plurality of semiconductor chips |
DE19735531A1 (de) * | 1997-08-16 | 1999-02-18 | Abb Research Ltd | Leistungshalbleitermodul mit in Submodulen integrierten Kühlern |
DE19935803A1 (de) * | 1998-08-04 | 2000-02-17 | Methode Electronics Inc | Schaltanlage mit Stromschiene und Wärmeableitvorrichtung |
US6295201B1 (en) * | 1998-08-04 | 2001-09-25 | Stratos Lightwave, Inc. | Bus bar having embedded switching device |
DE19900603A1 (de) | 1999-01-11 | 2000-07-13 | Bosch Gmbh Robert | Elektronisches Halbleitermodul |
JP3502566B2 (ja) * | 1999-05-18 | 2004-03-02 | 三菱電機株式会社 | 電力変換装置 |
JP2000349209A (ja) | 1999-06-09 | 2000-12-15 | Mitsubishi Electric Corp | パワー半導体モジュール |
US20030218057A1 (en) * | 2000-11-07 | 2003-11-27 | Craig Joseph | Electrical bus with associated porous metal heat sink and method of manufacturing same |
DE10121970B4 (de) * | 2001-05-05 | 2004-05-27 | Semikron Elektronik Gmbh | Leistungshalbleitermodul in Druckkontaktierung |
DE10129006B4 (de) * | 2001-06-15 | 2009-07-30 | Conti Temic Microelectronic Gmbh | Elektronische Baugruppe |
JP2003250278A (ja) | 2002-02-21 | 2003-09-05 | Hitachi Unisia Automotive Ltd | 半導体装置 |
JP4064741B2 (ja) | 2002-06-25 | 2008-03-19 | 株式会社日立製作所 | 半導体装置 |
JP2004063681A (ja) | 2002-07-26 | 2004-02-26 | Hitachi Unisia Automotive Ltd | 半導体装置 |
TW551612U (en) * | 2002-07-26 | 2003-09-01 | Tai Sol Electronics Co Ltd | Piercing type IC heat dissipating device |
DE10314172B4 (de) * | 2003-03-28 | 2006-11-30 | Infineon Technologies Ag | Verfahren zum Betreiben einer Anordnung aus einem elektrischen Bauelement auf einem Substrat und Verfahren zum Herstellen der Anordnung |
DE102004018469B3 (de) | 2004-04-16 | 2005-10-06 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Leistungshalbleiterschaltung |
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2004
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2005
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- 2005-02-01 JP JP2007507675A patent/JP4409600B2/ja not_active Expired - Fee Related
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016500474A (ja) * | 2012-12-07 | 2016-01-12 | エービービー テクノロジー エルティーディー. | 半導体アセンブリ |
US9984953B2 (en) | 2012-12-07 | 2018-05-29 | Abb Schweiz Ag | Semiconductor assembly having a press pack stack |
Also Published As
Publication number | Publication date |
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DE102004018469B3 (de) | 2005-10-06 |
US7800213B2 (en) | 2010-09-21 |
US20070114665A1 (en) | 2007-05-24 |
WO2005109505A1 (de) | 2005-11-17 |
JP4409600B2 (ja) | 2010-02-03 |
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