JP2007526602A - チオアルミネート発光体に対する反応性金属供給源及び堆積方法 - Google Patents

チオアルミネート発光体に対する反応性金属供給源及び堆積方法 Download PDF

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JP2007526602A
JP2007526602A JP2007501081A JP2007501081A JP2007526602A JP 2007526602 A JP2007526602 A JP 2007526602A JP 2007501081 A JP2007501081 A JP 2007501081A JP 2007501081 A JP2007501081 A JP 2007501081A JP 2007526602 A JP2007526602 A JP 2007526602A
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vapor deposition
physical vapor
barium
deposition method
sulfur
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Japanese (ja)
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JP2007526602A5 (https=
Inventor
ユエ（ヘレン）・シュー
アレクサンダー・コシャヒコヴ
リウ・グオ
ウ・シンウェイ
ジョー・アッチオーネ
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アイファイアー・テクノロジー・コープ
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Publication of JP2007526602A publication Critical patent/JP2007526602A/ja
Publication of JP2007526602A5 publication Critical patent/JP2007526602A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Physical Vapour Deposition (AREA)
JP2007501081A 2004-03-04 2005-03-04 チオアルミネート発光体に対する反応性金属供給源及び堆積方法 Withdrawn JP2007526602A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54955204P 2004-03-04 2004-03-04
PCT/CA2005/000333 WO2005085493A1 (en) 2004-03-04 2005-03-04 Reactive metal sources and deposition method for thioaluminate phosphors

Publications (2)

Publication Number Publication Date
JP2007526602A true JP2007526602A (ja) 2007-09-13
JP2007526602A5 JP2007526602A5 (https=) 2008-04-24

Family

ID=34919504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007501081A Withdrawn JP2007526602A (ja) 2004-03-04 2005-03-04 チオアルミネート発光体に対する反応性金属供給源及び堆積方法

Country Status (8)

Country Link
US (1) US7622149B2 (https=)
EP (1) EP1721026A4 (https=)
JP (1) JP2007526602A (https=)
KR (1) KR20070001167A (https=)
CN (1) CN1926259B (https=)
CA (1) CA2554756A1 (https=)
TW (1) TW200538564A (https=)
WO (1) WO2005085493A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008121044A (ja) * 2006-11-09 2008-05-29 Sumitomo Metal Mining Co Ltd Ｅｌ発光層形成用スパッタリングターゲットとその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006045195A1 (en) 2004-10-29 2006-05-04 Ifire Technology Corp. Novel thiosilicate phosphor compositions and deposition methods using barium-silicon vacuum deposition sources for deposition of thiosilicate phosphor films
JP4747751B2 (ja) * 2005-05-09 2011-08-17 三菱マテリアル株式会社 エレクトロルミネッセンス素子における蛍光体膜形成用高強度スパッタリングターゲット
JP2010525530A (ja) * 2007-04-30 2010-07-22 アイファイアー・アイピー・コーポレーション 厚膜誘電性エレクトロルミネセントディスプレイ用の積層厚膜誘電体構造
JP5700259B2 (ja) * 2010-02-17 2015-04-15 住友金属鉱山株式会社 透明導電膜の製造方法及び透明導電膜、それを用いた素子、透明導電基板並びにそれを用いたデバイス
CN103289687B (zh) * 2012-02-28 2015-10-28 海洋王照明科技股份有限公司 铈掺杂硫代铝酸盐发光薄膜、制备方法及其应用
US20180269044A1 (en) 2017-03-20 2018-09-20 International Business Machines Corporation Pvd tool to deposit highly reactive materials

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US5432015A (en) * 1992-05-08 1995-07-11 Westaim Technologies, Inc. Electroluminescent laminate with thick film dielectric
US5505986A (en) * 1994-02-14 1996-04-09 Planar Systems, Inc. Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices
US5773085A (en) * 1994-07-04 1998-06-30 Nippon Hoso Kyokai Method of manufacturing ternary compound thin films
US6074575A (en) * 1994-11-14 2000-06-13 Mitsui Mining & Smelting Co., Ltd. Thin film electro-luminescence device
WO1999034028A1 (fr) * 1997-12-24 1999-07-08 Kabushiki Kaisha Toshiba CIBLE DE PULVERISATION, FILM D'INTERCONNEXION A BASE D'Al ET COMPOSANT ELECTRONIQUE
JP2001294852A (ja) * 2000-04-14 2001-10-23 Tdk Corp 蛍光体とその製造方法、薄膜の製造装置、およびｅｌ素子
US6793962B2 (en) * 2000-11-17 2004-09-21 Tdk Corporation EL phosphor multilayer thin film and EL device
US6734469B2 (en) * 2000-11-17 2004-05-11 Tdk Corporation EL phosphor laminate thin film and EL device
US6821647B2 (en) * 2001-04-19 2004-11-23 Tdk Corporation Phosphor thin film preparation method, and EL panel
US6447654B1 (en) * 2001-05-29 2002-09-10 Ifire Technology Inc. Single source sputtering of thioaluminate phosphor films
JP3704068B2 (ja) * 2001-07-27 2005-10-05 ザ ウエステイム コーポレイション Ｅｌパネル
US6793782B2 (en) * 2001-12-21 2004-09-21 Ifire Technology Inc. Sputter deposition process for electroluminescent phosphors
US6781304B2 (en) * 2002-01-21 2004-08-24 Tdk Corporation EL panel
JP2003301171A (ja) * 2002-02-06 2003-10-21 Tdk Corp 蛍光体薄膜、その製造方法およびｅｌパネル
CA2478439A1 (en) * 2002-03-27 2003-10-02 Ifire Technology Inc. Yttrium substituted barium thioaluminate phosphor materials
WO2005033360A1 (en) * 2003-10-07 2005-04-14 Ifire Technology Corp. Polysulfide thermal vapour source for thin sulfide film deposition
US8057856B2 (en) * 2004-03-15 2011-11-15 Ifire Ip Corporation Method for gettering oxygen and water during vacuum deposition of sulfide films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008121044A (ja) * 2006-11-09 2008-05-29 Sumitomo Metal Mining Co Ltd Ｅｌ発光層形成用スパッタリングターゲットとその製造方法

Also Published As

Publication number Publication date
CN1926259B (zh) 2011-09-07
KR20070001167A (ko) 2007-01-03
CN1926259A (zh) 2007-03-07
US20050202162A1 (en) 2005-09-15
EP1721026A1 (en) 2006-11-15
US7622149B2 (en) 2009-11-24
CA2554756A1 (en) 2005-09-15
WO2005085493A1 (en) 2005-09-15
EP1721026A4 (en) 2009-11-11
TW200538564A (en) 2005-12-01

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