US20180269044A1 - Pvd tool to deposit highly reactive materials - Google Patents
Pvd tool to deposit highly reactive materials Download PDFInfo
- Publication number
- US20180269044A1 US20180269044A1 US15/463,159 US201715463159A US2018269044A1 US 20180269044 A1 US20180269044 A1 US 20180269044A1 US 201715463159 A US201715463159 A US 201715463159A US 2018269044 A1 US2018269044 A1 US 2018269044A1
- Authority
- US
- United States
- Prior art keywords
- module
- target
- tool
- deposition
- target source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 title claims description 56
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 86
- 238000000576 coating method Methods 0.000 claims abstract description 49
- 239000011248 coating agent Substances 0.000 claims abstract description 43
- 238000000151 deposition Methods 0.000 claims abstract description 40
- 230000008021 deposition Effects 0.000 claims abstract description 31
- 238000001704 evaporation Methods 0.000 claims abstract description 24
- 230000008020 evaporation Effects 0.000 claims abstract description 22
- 239000013077 target material Substances 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 description 38
- 230000008569 process Effects 0.000 description 27
- 238000012545 processing Methods 0.000 description 24
- 238000003860 storage Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 14
- 230000006870 function Effects 0.000 description 13
- 239000003570 air Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 239000000395 magnesium oxide Substances 0.000 description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 230000005291 magnetic effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011253 protective coating Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- -1 e.g. Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910020751 SixGe1-x Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000000541 cathodic arc deposition Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3485—Means for avoiding target poisoning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/081—Sputtering sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
Definitions
- the present invention generally relates to semiconductor processing and tools, and more particularly to a physical vapor deposition tool and methods for use that provide protection for highly reactive source materials.
- Highly reactive physical vapor deposition (PVD) targets such as, e.g., magnesium oxide (MgO) and lanthanum (La) can absorb water or oxidize very quickly during exposure to air. After initial installation of a new target, there is a significant burn-in time required to clean up water or oxidation on surfaces of the highly reactive target. The clean-up process is needed to prepare the target for deposition of high quality materials. The clean-up process is typically long in duration and can significantly reduce overall tool utilization.
- the highly reactive materials often react with oxygen and water. This can affect the quality of the source material and can have negative impacts when using the source material for deposition of thin films. Further, the source can be burned away more quickly with higher numbers and longer duration burn-in processes.
- a deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source within the vacuum chamber.
- the target source includes a target material for depositing on a workpiece.
- An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber.
- a gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.
- Another deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source.
- the target source includes a target material for depositing on a workpiece that is subject to damage when exposed to air.
- An enclosure is integrally formed within the vacuum chamber, and the enclosure includes a gate configured to selectively open the enclosure. The gate forms an opening opposing a position of the target source in the vacuum chamber.
- An evaporator module is independent of the physical vapor deposition module and is mounted within the enclosure in the vacuum chamber such that evaporation of a coating element through the gate coats the target source in the physical vapor deposition module.
- a method for protecting a target source in a deposition tool includes depositing a thin film on a workpiece using a target source in a physical vapor deposition module; opening a gate to expose an evaporator module to an interior of a vacuum chamber that houses the physical vapor deposition module; and evaporating a coating from the evaporator module onto the target source of the physical vapor deposition module to protect the target source from exposure to reactants.
- FIG. 1 is a schematic diagram showing a physical vapor deposition (PVD) tool having a PVD module and an evaporation module, the PVD tool for depositing material on a workpiece in accordance with embodiments of the present invention
- PVD physical vapor deposition
- FIG. 2 is a schematic diagram showing the PVD tool having the PVD module and the evaporation module, the evaporation module for coating a target source in accordance with embodiments of the present invention
- FIG. 3 is a schematic diagram showing the PVD tool having the PVD module and the evaporation module, wherein the coating on the target source is removed by the PVD tool in accordance with embodiments of the present invention.
- FIG. 4 is a block/flow diagram showing methods for protecting highly reactive material of a target source in accordance with embodiments of the present invention.
- a physical vapor deposition (PVD) tool includes an evaporator mounted within the tool.
- the evaporator can be employed to evaporate a protective material onto a highly reactive source or target.
- the evaporator can be employed to evaporate material that settles on the target to form a coating.
- the coating or layer can be deposited onto the highly reactive target to protect the target from absorbing water or being oxidized.
- the target can be coated with protective material, that can include, e.g., Ti, Al, Si, Cr or other useful material.
- the evaporator Before the PVD tool is opened to change out a workpiece or change processing, the evaporator applies the protective coating. After the PVD tool is closed, the coating can be removed by sputtering or other process to remove the coating to expose the target material once again for deposition processing.
- the present embodiments can include a design for an integrated circuit chip, which can be created in a graphical computer programming language, and stored in a computer storage medium (such as a disk, tape, physical hard drive, or virtual hard drive such as in a storage access network). If the designer does not fabricate chips or the photolithographic masks used to fabricate chips, the designer can transmit the resulting design by physical means (e.g., by providing a copy of the storage medium storing the design) or electronically (e.g., through the Internet) to such entities, directly or indirectly.
- the stored design is then converted into the appropriate format (e.g., GDSII) for the fabrication of photolithographic masks, which typically include multiple copies of the chip design in question that are to be formed on a wafer.
- the photolithographic masks are utilized to define areas of the wafer (and/or the layers thereon) to be etched or otherwise processed.
- the resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form.
- the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections).
- the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product.
- the end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.
- material compounds will be described in terms of listed elements, e.g., SiGe. These compounds include different proportions of the elements within the compound, e.g., SiGe includes Si x Ge 1-x where x is less than or equal to 1, etc.
- SiGe includes Si x Ge 1-x where x is less than or equal to 1, etc.
- other elements can be included in the compound and still function in accordance with the present principles.
- the compounds with additional elements will be referred to herein as alloys.
- any of the following “/”, “and/or”, and “at least one of”, for example, in the cases of “A/B”, “A and/or B” and “at least one of A and B”, is intended to encompass the selection of the first listed option (A) only, or the selection of the second listed option (B) only, or the selection of both options (A and B).
- such phrasing is intended to encompass the selection of the first listed option (A) only, or the selection of the second listed option (B) only, or the selection of the third listed option (C) only, or the selection of the first and the second listed options (A and B) only, or the selection of the first and third listed options (A and C) only, or the selection of the second and third listed options (B and C) only, or the selection of all three options (A and B and C).
- This can be extended, as readily apparent by one of ordinary skill in this and related arts, for as many items listed.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper,” and the like, can be used herein for ease of description to describe one element's or feature's relationship to another element(s) or feature(s) as illustrated in the FIGS. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the FIGS. For example, if the device in the FIGS. is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the term “below” can encompass both an orientation of above and below.
- the device can be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein can be interpreted accordingly.
- a layer is referred to as being “between” two layers, it can be the only layer between the two layers, or one or more intervening layers can also be present.
- PVD physical vapor deposition
- the PVD tool can include any PVD tool or combination tool that performs PVD and/or other deposition or etching methods.
- the PVD tool 10 includes a sputtering function 20 .
- sputtering functions include Direct Current (DC) diode type systems, radio frequency (RF) sputtering, magnetron sputtering, ionized metal plasma (IMP) sputtering, etc.
- the PVD tool 10 can perform a plurality of vacuum deposition processes which can be used to form thin films and coatings.
- PVD is characterized by a process in which the material goes from a condensed phase to a vapor phase and then back to a thin film condensed phase.
- the PVD processes can include sputtering and evaporation.
- PVD can be employed for semiconductor device fabrication, solar panel fabrication, thin films for packaging, tool coatings, etc.
- the PVD 10 tool includes a vacuum chamber 24 (which includes a walled pressure vessel) where a source material is provided for PVD processing (e.g., sputtering or evaporation).
- the PVD tool 10 can include a cathodic arc deposition (e.g., electric arc discharge at a target (source) material that creates a highly ionized vapor to be deposited onto a workpiece (not shown)); evaporative deposition (e.g., material to be deposited is heated to a high vapor pressure by electrical resistance heating in a vacuum); sputter deposition (e.g., glow plasma discharge bombards the material sputtering a vapor for deposition); electron beam PVD (e.g., material to be deposited is heated to a high vapor pressure by electron bombardment in vacuum and transported by diffusion for deposition by condensation on a workpiece 34 ); pulsed laser deposition (e.g., laser ablates material from the target into a vapor); etc.
- the vacuum chamber 24 includes a reduced pressure during operation realized by a tightly sealed system with input gas supply lines 28 , output gas lines 30 and a vacuum pump(s) 32 .
- the source material (target) 12 is mounted to face a substrate or workpiece 34 onto which the material grows.
- a gas e.g., inert argon
- the chamber 24 can be cleaned, and/or the highly reactive target 12 target is burned in using the PVD tool 10 .
- a power supply 36 is connected to the target 12 , which functions as a cathode 35 (negative potential).
- a field generated between the cathode 35 and an anode (workpiece 34 ) accelerates electrons present in the chamber away from the cathode. Before being collected at the grounded chamber walls the electrons collide with gas molecules in the chamber provided by the target 12 .
- the highly reactive target 12 plasma 22 fills the chamber 24 as an initial step (e.g., burn in).
- An evaporation module 16 is protected from a PVD module 46 during deposition operations by closing and sealing of an enclosure 14 using a gate 18 .
- the highly reactive material from the target 12 is deposited on the substrate 34 or a set number of substrates ( 34 ) until the set number of substrates have been coated or other processing is completed.
- the chamber Upon completion of the processing, the chamber will be opened or exposed to air (air break) or other process which could potentially expose the source target 12 to degradation due to environmental or ambient conditions.
- the PVD tool 10 is well suited for magnetic devices that utilize MgO dielectrics, such as, e.g., magnetic random access memory (MRAM), and magnetic inductors.
- MRAM includes magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetization. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. These plates are separated by a thin insulating layer.
- the thin insulating layer or other structures can employ highly reactive materials, such as, e.g., MgO or other Mg compound materials.
- the PVD tool 10 is provided for depositing material by PVD.
- the tool 10 provides a coating 20 over the source target 12 to protect the target 12 when the chamber of the tool is opened or during exposure to oxygen, water vapor or other reacting agents.
- the coating 20 can include a metal or metal-containing compound, e.g., Ti, Al, Si, Cr or other useful material.
- the coating 20 protects the source material of the target 12 and, in particular, protects highly reactive materials that are employed as the target source 12 .
- the highly reactive materials can include Magnesium Oxide (MgO), Lanthanum (La), Iridium (Ir), Beryllium (Be), Lutetium (Lu), Tellurium (Te), Cerium (Ce), Holmium (Ho), Hafnium (Hf), other reactive metals, metalloids, oxides, compounds, and combinations thereof that can absorb water or oxidize very quickly during exposure to air.
- an evaporation process is performed to provide the protective coating 20 onto the target 12 .
- the coating 20 is applied using an evaporator module 16 .
- the evaporator module 14 is selectively exposed to the vacuum chamber 24 using a valve or gate 18 .
- the evaporator module 16 is mounted within the PVD tool 10 and, more specifically, within a pressure chamber or enclosure 14 .
- the enclosure 14 is opened to permit evaporation products to move into the vacuum chamber 24 .
- An opening 25 preferably faces the target 12 , but need not.
- the pressure chamber 14 is closed by closing the gate 18 .
- the gate 18 can include a gate valve, a shutter, a slide panel or other mechanical gate structure.
- the gate 18 can be manually controlled using handle(s) 23 , etc. or automatically controlled using actuators, etc.
- the controls are preferably provided on the exterior of the chamber 24 to permit manual operation, if needed.
- the evaporator module 16 includes an evaporation source 50 that includes a coating material for producing the coating 20 on the target 12 .
- one or more sources 50 can be employed to form a compound coating (e.g., TiAlN, etc.).
- the evaporator module 16 can include a heating source/filaments, laser, electron beam, etc. or other energy source for generating evaporated coating materials.
- the evaporator module 14 is independently operable from a PVD module 46 . While some functions may be shared between the PVD module 46 and the evaporator module 16 , the two modules can be exclusively operated to perform their respective functions.
- the PVD tool 10 includes a control or computer system 44 , which includes a computer device or system for controlling the operation and timing of operations, monitoring system parameters and acting as an interface with the processing system or tool.
- the computer system 44 opens and closes the gate 18 in accordance with a program of instructions or a process or record.
- the computer system 44 includes a computer readable storage medium that can be a tangible device that can retain and store instructions for use by an instruction execution device.
- the computer readable storage medium may be, for example, but is not limited to, an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of the foregoing.
- a non-exhaustive list of more specific examples of the computer readable storage medium includes the following: a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), a static random access memory (SRAM), a portable compact disc read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, a mechanically encoded device such as punch-cards or raised structures in a groove having instructions recorded thereon, and any suitable combination of the foregoing.
- RAM random access memory
- ROM read-only memory
- EPROM or Flash memory erasable programmable read-only memory
- SRAM static random access memory
- CD-ROM compact disc read-only memory
- DVD digital versatile disk
- memory stick a floppy disk
- a mechanically encoded device such as punch-cards or raised structures in a groove having instructions recorded thereon
- a computer readable storage medium is not to be construed as being transitory signals per se, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through a waveguide or other transmission media (e.g., light pulses passing through a fiber-optic cable), or electrical signals transmitted through a wire.
- Computer readable program instructions described herein can be downloaded to respective computing/processing devices from a computer readable storage medium or to an external computer or external storage device via a network, for example, the Internet, a local area network, a wide area network and/or a wireless network.
- the network may comprise copper transmission cables, optical transmission fibers, wireless transmission, routers, firewalls, switches, gateway computers and/or edge servers.
- a network adapter card or network interface in each computing/processing device receives computer readable program instructions from the network and forwards the computer readable program instructions for storage in a computer readable storage medium within the respective computing/processing device.
- Computer readable program instructions for carrying out operations of the present invention may be assembler instructions, instruction-set-architecture (ISA) instructions, machine instructions, machine dependent instructions, microcode, firmware instructions, state-setting data, or either source code or object code written in any combination of one or more programming languages, including an object oriented programming language such as SMALLTALK, C++ or the like, and conventional procedural programming languages, such as the “C” programming language or similar programming languages.
- the computer readable program instructions may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server.
- the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet Service Provider).
- electronic circuitry including, for example, programmable logic circuitry, field-programmable gate arrays (FPGA), or programmable logic arrays (PLA) may execute the computer readable program instructions by utilizing state information of the computer readable program instructions to personalize the electronic circuitry, in order to perform aspects of the present invention.
- the enclosure 14 is opened by opening the gate 18 to expose the evaporator source 50 of the evaporator module 16 .
- the evaporator module 16 is activated to cause the evaporation of a protective coating material.
- the protective coating material condenses on the target 12 (and other surfaces) within the chamber 24 forming the coating 20 on the target 12 .
- the chamber 24 can be opened or the target 12 with its coating 20 can be exposed to air or other reactive gases or materials.
- the coating 20 protects the underlying target material from reacting with oxygen, water vapor or any other reactant gases or materials. While the coating 20 can be applied to protect the target 12 at any time, it is particularly useful to do so before opening the chamber 24 to replace or move the workpiece 34 .
- the coating 20 can include a conformal coating having a thickness sufficient to prevent chemical reactions with ambient air or other reactants in the chamber 24 or outside the chamber 24 .
- the coating 20 can have a thickness of between about 5 nm to about 20 microns depending on the reactivity of the target material and the threat to the target material.
- the coating thickness can also depend on the coating material selected and the other processing conditions (e.g., chamber temperature, etc.).
- the chamber 24 can be resealed and a new workpiece 40 installed for processing.
- the material of the target 12 can be subjected to a sputtering process (e.g., exposed to plasma) to remove the coating 20 and expose the target material 12 once again.
- Processing can continue with the PVD deposition of a new workpiece 40 .
- Removing the non-reactive coating 20 can employ sputtering or another other removal process that employs reactants 48 (e.g., ions) to remove the coating 20 .
- the PVD tool 10 is depicted in a basic form for simplicity.
- the PVD tool 10 can include a plurality of input/output gas lines, power sources, load and unload mechanisms, device holders, valves, meters, gauges, heating devices, cooling devices, etc.
- the PVD tool 10 for depositing highly reactive materials includes a PVD module 46 (e.g., cathode target 12 and anode (workpiece 34 , 40 )) to deposit highly reactive material, and the evaporator module 16 that is separate from the PVD module 46 by the gate valve 18 or other mechanism that can seal off the evaporator module 16 .
- a PVD module 46 e.g., cathode target 12 and anode (workpiece 34 , 40 )
- the evaporator module 16 that is separate from the PVD module 46 by the gate valve 18 or other mechanism that can seal off the evaporator module 16 .
- specific configurations can employ line-of-sight transfer for PVD coatings; however, other complex geometries can be employed for both PVD module 46 and the evaporation module 16 .
- PVD coatings provide harder and more corrosion resistance than coatings applied by other processes. Most coatings have high temperature and good impact strength, excellent abrasion resistance and are durable. In this way, the coated target 12 can be removed from the chamber 24 , transported, stored or otherwise exposed to air or other environmental conditions without losing material of the target 12 to corrosion. Specific technologies can impose constraints; for example, line-of-sight transfer is typical of most PVD coating techniques, however there are methods that can permit full coverage using more complex geometries.
- FIG. 4 methods for protecting a target source in a deposition tool are illustratively shown in accordance with embodiments of the present invention. Aspects of the present invention are described herein with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and/or block diagrams, and combinations of blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer readable program instructions.
- These computer readable program instructions may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions/acts specified in the flowchart and/or block diagram block or blocks.
- These computer readable program instructions may also be stored in a computer readable storage medium that can direct a computer, a programmable data processing apparatus, and/or other devices to function in a particular manner, such that the computer readable storage medium having instructions stored therein comprises an article of manufacture including instructions which implement aspects of the function/act specified in the flowchart and/or block diagram block or blocks.
- the computer readable program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable apparatus or other device to produce a computer implemented process, such that the instructions which execute on the computer, other programmable apparatus, or other device implement the functions/acts specified in the flowchart and/or block diagram block or blocks.
- each block in the flowchart or block diagrams may represent a module, segment, or portion of instructions, which comprises one or more executable instructions for implementing the specified logical function(s).
- the functions noted in the blocks may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved.
- a cleaning process can be performed to remove any contaminants or residue from interior positions of the vacuum chamber of a deposition tool.
- This can include cleaning an evaporation module as well as a PVD module.
- a burn-in process can be performed with a gate of an enclosure housing the evaporation module closed, the PVD module can be run to deposit and flow a target material within the chamber.
- the physical vapor deposition module can include a sputtering tool or any other module suitable for PVD processing.
- a thin film can be deposited on a workpiece or workpieces using a target source in the physical vapor deposition module at its operating conditions.
- the target source can include, e.g., MgO, La or other highly reactive materials. Any suitable process of the PVD module can be employed that uses material from the target source. Any PVD module process using the target to deposit films on a workpiece, e.g., a semiconductor device, a tool, packaging materials, etc. can be employed.
- a gate of the evaporation module enclosure is opened to expose an evaporator module to an interior of a vacuum chamber that houses the physical vapor deposition module. This can include opening a gate valve, or other gate mechanism.
- a coating is evaporated from the evaporator module onto the target source of the physical vapor deposition module to protect the target source from exposure to reactants.
- the coating can include a material selected from the group consisting of Ti, Al, Si and Cr, although other metals or metal compounds can be employed.
- the evaporator module is activated with the enclosure (gate) opened to have evaporated materials settle over exposed portions of the target source to coat the target source with a protective barrier to avoid oxidation and reaction with other materials.
- the evaporating of the coating is performed independently of depositing the thin film(s) (which is performed by the PVD module). While these processes could be run together, it is preferable to provide the evaporated coating separately from PVD module processing.
- the PVD module can be employed again for deposition by closing the gate to reseal the enclosure prior to deposition processing with the PVD module.
- the target source protected by the coating can be removed from the vacuum chamber, exposed to air or other gases in the vacuum chamber, etc. If the target source is well-coated, exposure to air will not degrade the material of the target source. The target source can be transported and even stored (in or out of the chamber) without significant degradation.
- the coating is removed from the target source by a removal process (e.g., in chamber).
- the removal process can include a sputtering process although other removal processes are contemplated depending on the PVD module capabilities.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
- The present invention generally relates to semiconductor processing and tools, and more particularly to a physical vapor deposition tool and methods for use that provide protection for highly reactive source materials.
- Highly reactive physical vapor deposition (PVD) targets such as, e.g., magnesium oxide (MgO) and lanthanum (La) can absorb water or oxidize very quickly during exposure to air. After initial installation of a new target, there is a significant burn-in time required to clean up water or oxidation on surfaces of the highly reactive target. The clean-up process is needed to prepare the target for deposition of high quality materials. The clean-up process is typically long in duration and can significantly reduce overall tool utilization.
- In addition, the highly reactive materials often react with oxygen and water. This can affect the quality of the source material and can have negative impacts when using the source material for deposition of thin films. Further, the source can be burned away more quickly with higher numbers and longer duration burn-in processes.
- In accordance with an embodiment of the present invention, a deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source within the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.
- Another deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source. The target source includes a target material for depositing on a workpiece that is subject to damage when exposed to air. An enclosure is integrally formed within the vacuum chamber, and the enclosure includes a gate configured to selectively open the enclosure. The gate forms an opening opposing a position of the target source in the vacuum chamber. An evaporator module is independent of the physical vapor deposition module and is mounted within the enclosure in the vacuum chamber such that evaporation of a coating element through the gate coats the target source in the physical vapor deposition module.
- A method for protecting a target source in a deposition tool includes depositing a thin film on a workpiece using a target source in a physical vapor deposition module; opening a gate to expose an evaporator module to an interior of a vacuum chamber that houses the physical vapor deposition module; and evaporating a coating from the evaporator module onto the target source of the physical vapor deposition module to protect the target source from exposure to reactants.
- These and other features and advantages will become apparent from the following detailed description of illustrative embodiments thereof, which is to be read in connection with the accompanying drawings.
- The following description will provide details of preferred embodiments with reference to the following figures wherein:
-
FIG. 1 is a schematic diagram showing a physical vapor deposition (PVD) tool having a PVD module and an evaporation module, the PVD tool for depositing material on a workpiece in accordance with embodiments of the present invention; -
FIG. 2 is a schematic diagram showing the PVD tool having the PVD module and the evaporation module, the evaporation module for coating a target source in accordance with embodiments of the present invention; -
FIG. 3 is a schematic diagram showing the PVD tool having the PVD module and the evaporation module, wherein the coating on the target source is removed by the PVD tool in accordance with embodiments of the present invention; and -
FIG. 4 is a block/flow diagram showing methods for protecting highly reactive material of a target source in accordance with embodiments of the present invention. - Embodiments of the present invention are directed to eliminating the need for lengthy target clean up processes. In addition, embodiments in accordance with the present invention provide longer life to a target source by reducing the need for long duration burn-in processes. In one embodiment, a physical vapor deposition (PVD) tool includes an evaporator mounted within the tool. The evaporator can be employed to evaporate a protective material onto a highly reactive source or target. The evaporator can be employed to evaporate material that settles on the target to form a coating. The coating or layer can be deposited onto the highly reactive target to protect the target from absorbing water or being oxidized. The target can be coated with protective material, that can include, e.g., Ti, Al, Si, Cr or other useful material. Before the PVD tool is opened to change out a workpiece or change processing, the evaporator applies the protective coating. After the PVD tool is closed, the coating can be removed by sputtering or other process to remove the coating to expose the target material once again for deposition processing.
- It is to be understood that aspects of the present invention will be described in terms of a given illustrative architecture; however, other architectures, structures, substrate materials and process features and steps can be varied within the scope of aspects of the present invention.
- It will also be understood that when an element such as a layer, region or substrate is referred to as being “on” or “over” another element, it can be directly on the other element or intervening elements can also be present. In contrast, when an element is referred to as being “directly on” or “directly over” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements can be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.
- The present embodiments can include a design for an integrated circuit chip, which can be created in a graphical computer programming language, and stored in a computer storage medium (such as a disk, tape, physical hard drive, or virtual hard drive such as in a storage access network). If the designer does not fabricate chips or the photolithographic masks used to fabricate chips, the designer can transmit the resulting design by physical means (e.g., by providing a copy of the storage medium storing the design) or electronically (e.g., through the Internet) to such entities, directly or indirectly. The stored design is then converted into the appropriate format (e.g., GDSII) for the fabrication of photolithographic masks, which typically include multiple copies of the chip design in question that are to be formed on a wafer. The photolithographic masks are utilized to define areas of the wafer (and/or the layers thereon) to be etched or otherwise processed.
- Methods as described herein can be used in the fabrication of integrated circuit chips. The resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. In the latter case, the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections). In any case, the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product. The end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.
- It should also be understood that material compounds will be described in terms of listed elements, e.g., SiGe. These compounds include different proportions of the elements within the compound, e.g., SiGe includes SixGe1-x where x is less than or equal to 1, etc. In addition, other elements can be included in the compound and still function in accordance with the present principles. The compounds with additional elements will be referred to herein as alloys.
- Reference in the specification to “one embodiment” or “an embodiment”, as well as other variations thereof, means that a particular feature, structure, characteristic, and so forth described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrase “in one embodiment” or “in an embodiment”, as well any other variations, appearing in various places throughout the specification are not necessarily all referring to the same embodiment.
- It is to be appreciated that the use of any of the following “/”, “and/or”, and “at least one of”, for example, in the cases of “A/B”, “A and/or B” and “at least one of A and B”, is intended to encompass the selection of the first listed option (A) only, or the selection of the second listed option (B) only, or the selection of both options (A and B). As a further example, in the cases of “A, B, and/or C” and “at least one of A, B, and C”, such phrasing is intended to encompass the selection of the first listed option (A) only, or the selection of the second listed option (B) only, or the selection of the third listed option (C) only, or the selection of the first and the second listed options (A and B) only, or the selection of the first and third listed options (A and C) only, or the selection of the second and third listed options (B and C) only, or the selection of all three options (A and B and C). This can be extended, as readily apparent by one of ordinary skill in this and related arts, for as many items listed.
- The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes” and/or “including,” when used herein, specify the presence of stated features, integers, steps, operations, elements and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groups thereof.
- Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper,” and the like, can be used herein for ease of description to describe one element's or feature's relationship to another element(s) or feature(s) as illustrated in the FIGS. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the FIGS. For example, if the device in the FIGS. is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the term “below” can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein can be interpreted accordingly. In addition, it will also be understood that when a layer is referred to as being “between” two layers, it can be the only layer between the two layers, or one or more intervening layers can also be present.
- It will be understood that, although the terms first, second, etc. can be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element discussed below could be termed a second element without departing from the scope of the present concept.
- Referring now to the drawings in which like numerals represent the same or similar elements and initially to
FIG. 1 , a physical vapor deposition (PVD)tool 10 is shown in accordance with one illustrative embodiment. The PVD tool can include any PVD tool or combination tool that performs PVD and/or other deposition or etching methods. In one particularly useful embodiment, thePVD tool 10 includes asputtering function 20. Examples of sputtering functions include Direct Current (DC) diode type systems, radio frequency (RF) sputtering, magnetron sputtering, ionized metal plasma (IMP) sputtering, etc. - The
PVD tool 10 can perform a plurality of vacuum deposition processes which can be used to form thin films and coatings. PVD is characterized by a process in which the material goes from a condensed phase to a vapor phase and then back to a thin film condensed phase. The PVD processes can include sputtering and evaporation. PVD can be employed for semiconductor device fabrication, solar panel fabrication, thin films for packaging, tool coatings, etc. - The
PVD 10 tool includes a vacuum chamber 24 (which includes a walled pressure vessel) where a source material is provided for PVD processing (e.g., sputtering or evaporation). ThePVD tool 10 can include a cathodic arc deposition (e.g., electric arc discharge at a target (source) material that creates a highly ionized vapor to be deposited onto a workpiece (not shown)); evaporative deposition (e.g., material to be deposited is heated to a high vapor pressure by electrical resistance heating in a vacuum); sputter deposition (e.g., glow plasma discharge bombards the material sputtering a vapor for deposition); electron beam PVD (e.g., material to be deposited is heated to a high vapor pressure by electron bombardment in vacuum and transported by diffusion for deposition by condensation on a workpiece 34); pulsed laser deposition (e.g., laser ablates material from the target into a vapor); etc. - The
vacuum chamber 24 includes a reduced pressure during operation realized by a tightly sealed system with inputgas supply lines 28,output gas lines 30 and a vacuum pump(s) 32. The source material (target) 12 is mounted to face a substrate orworkpiece 34 onto which the material grows. In a sputtering system, a gas, e.g., inert argon, is introduced into thechamber 24 and its pressure is set to a processing pressure. Thechamber 24 can be cleaned, and/or the highlyreactive target 12 target is burned in using thePVD tool 10. Apower supply 36 is connected to thetarget 12, which functions as a cathode 35 (negative potential). A field generated between thecathode 35 and an anode (workpiece 34) accelerates electrons present in the chamber away from the cathode. Before being collected at the grounded chamber walls the electrons collide with gas molecules in the chamber provided by thetarget 12. - At high electric fields, electron-ion pairs are created through these collisions. This creates an ionized gas or plasma. In addition to ionization, there are other processes occurring, such as excitation, de-excitation, dissociation, etc., which may also influence the growing film. The highly
reactive target 12plasma 22 fills thechamber 24 as an initial step (e.g., burn in). Anevaporation module 16 is protected from aPVD module 46 during deposition operations by closing and sealing of anenclosure 14 using agate 18. - The highly reactive material from the
target 12 is deposited on thesubstrate 34 or a set number of substrates (34) until the set number of substrates have been coated or other processing is completed. Upon completion of the processing, the chamber will be opened or exposed to air (air break) or other process which could potentially expose thesource target 12 to degradation due to environmental or ambient conditions. - The
PVD tool 10 is well suited for magnetic devices that utilize MgO dielectrics, such as, e.g., magnetic random access memory (MRAM), and magnetic inductors. MRAM includes magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetization. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. These plates are separated by a thin insulating layer. The thin insulating layer or other structures can employ highly reactive materials, such as, e.g., MgO or other Mg compound materials. - Referring to
FIG. 2 , in accordance with the present embodiments, thePVD tool 10 is provided for depositing material by PVD. Thetool 10 provides acoating 20 over thesource target 12 to protect thetarget 12 when the chamber of the tool is opened or during exposure to oxygen, water vapor or other reacting agents. In particularly useful embodiments, thecoating 20 can include a metal or metal-containing compound, e.g., Ti, Al, Si, Cr or other useful material. - The
coating 20 protects the source material of thetarget 12 and, in particular, protects highly reactive materials that are employed as thetarget source 12. The highly reactive materials can include Magnesium Oxide (MgO), Lanthanum (La), Iridium (Ir), Beryllium (Be), Lutetium (Lu), Tellurium (Te), Cerium (Ce), Holmium (Ho), Hafnium (Hf), other reactive metals, metalloids, oxides, compounds, and combinations thereof that can absorb water or oxidize very quickly during exposure to air. - Prior to opening the
chamber 24, an evaporation process is performed to provide theprotective coating 20 onto thetarget 12. Thecoating 20 is applied using anevaporator module 16. Theevaporator module 14 is selectively exposed to thevacuum chamber 24 using a valve orgate 18. Theevaporator module 16 is mounted within thePVD tool 10 and, more specifically, within a pressure chamber orenclosure 14. Theenclosure 14 is opened to permit evaporation products to move into thevacuum chamber 24. Anopening 25 preferably faces thetarget 12, but need not. - During processing, e.g., sputtering, evaporation, etc. of the
PVD tool 10, thepressure chamber 14 is closed by closing thegate 18. Thegate 18 can include a gate valve, a shutter, a slide panel or other mechanical gate structure. Thegate 18 can be manually controlled using handle(s) 23, etc. or automatically controlled using actuators, etc. The controls are preferably provided on the exterior of thechamber 24 to permit manual operation, if needed. - The
evaporator module 16 includes anevaporation source 50 that includes a coating material for producing thecoating 20 on thetarget 12. In one embodiment, one ormore sources 50 can be employed to form a compound coating (e.g., TiAlN, etc.). Theevaporator module 16 can include a heating source/filaments, laser, electron beam, etc. or other energy source for generating evaporated coating materials. Theevaporator module 14 is independently operable from aPVD module 46. While some functions may be shared between thePVD module 46 and theevaporator module 16, the two modules can be exclusively operated to perform their respective functions. - In particularly useful embodiments, the
PVD tool 10 includes a control orcomputer system 44, which includes a computer device or system for controlling the operation and timing of operations, monitoring system parameters and acting as an interface with the processing system or tool. In one embodiment, thecomputer system 44 opens and closes thegate 18 in accordance with a program of instructions or a process or record. - The
computer system 44 includes a computer readable storage medium that can be a tangible device that can retain and store instructions for use by an instruction execution device. The computer readable storage medium may be, for example, but is not limited to, an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of the foregoing. A non-exhaustive list of more specific examples of the computer readable storage medium includes the following: a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), a static random access memory (SRAM), a portable compact disc read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, a mechanically encoded device such as punch-cards or raised structures in a groove having instructions recorded thereon, and any suitable combination of the foregoing. A computer readable storage medium, as used herein, is not to be construed as being transitory signals per se, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through a waveguide or other transmission media (e.g., light pulses passing through a fiber-optic cable), or electrical signals transmitted through a wire. - Computer readable program instructions described herein can be downloaded to respective computing/processing devices from a computer readable storage medium or to an external computer or external storage device via a network, for example, the Internet, a local area network, a wide area network and/or a wireless network. The network may comprise copper transmission cables, optical transmission fibers, wireless transmission, routers, firewalls, switches, gateway computers and/or edge servers. A network adapter card or network interface in each computing/processing device receives computer readable program instructions from the network and forwards the computer readable program instructions for storage in a computer readable storage medium within the respective computing/processing device.
- Computer readable program instructions for carrying out operations of the present invention may be assembler instructions, instruction-set-architecture (ISA) instructions, machine instructions, machine dependent instructions, microcode, firmware instructions, state-setting data, or either source code or object code written in any combination of one or more programming languages, including an object oriented programming language such as SMALLTALK, C++ or the like, and conventional procedural programming languages, such as the “C” programming language or similar programming languages. The computer readable program instructions may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the latter scenario, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet Service Provider). In some embodiments, electronic circuitry including, for example, programmable logic circuitry, field-programmable gate arrays (FPGA), or programmable logic arrays (PLA) may execute the computer readable program instructions by utilizing state information of the computer readable program instructions to personalize the electronic circuitry, in order to perform aspects of the present invention.
- Once the processing (e.g., of the PVD module 46) is complete, the
enclosure 14 is opened by opening thegate 18 to expose theevaporator source 50 of theevaporator module 16. Theevaporator module 16 is activated to cause the evaporation of a protective coating material. The protective coating material condenses on the target 12 (and other surfaces) within thechamber 24 forming thecoating 20 on thetarget 12. - Now, the
chamber 24 can be opened or thetarget 12 with itscoating 20 can be exposed to air or other reactive gases or materials. Thecoating 20 protects the underlying target material from reacting with oxygen, water vapor or any other reactant gases or materials. While thecoating 20 can be applied to protect thetarget 12 at any time, it is particularly useful to do so before opening thechamber 24 to replace or move theworkpiece 34. - The
coating 20 can include a conformal coating having a thickness sufficient to prevent chemical reactions with ambient air or other reactants in thechamber 24 or outside thechamber 24. Thecoating 20 can have a thickness of between about 5 nm to about 20 microns depending on the reactivity of the target material and the threat to the target material. The coating thickness can also depend on the coating material selected and the other processing conditions (e.g., chamber temperature, etc.). - Referring to
FIG. 3 , with the workpiece removed, thechamber 24 can be resealed and anew workpiece 40 installed for processing. In this case, the material of thetarget 12 can be subjected to a sputtering process (e.g., exposed to plasma) to remove thecoating 20 and expose thetarget material 12 once again. Processing can continue with the PVD deposition of anew workpiece 40. Removing thenon-reactive coating 20 can employ sputtering or another other removal process that employs reactants 48 (e.g., ions) to remove thecoating 20. - It should be understood that the
PVD tool 10 is depicted in a basic form for simplicity. ThePVD tool 10 can include a plurality of input/output gas lines, power sources, load and unload mechanisms, device holders, valves, meters, gauges, heating devices, cooling devices, etc. - The
PVD tool 10 for depositing highly reactive materials includes a PVD module 46 (e.g.,cathode target 12 and anode (workpiece 34, 40)) to deposit highly reactive material, and theevaporator module 16 that is separate from thePVD module 46 by thegate valve 18 or other mechanism that can seal off theevaporator module 16. In addition, specific configurations can employ line-of-sight transfer for PVD coatings; however, other complex geometries can be employed for bothPVD module 46 and theevaporation module 16. - PVD coatings provide harder and more corrosion resistance than coatings applied by other processes. Most coatings have high temperature and good impact strength, excellent abrasion resistance and are durable. In this way, the
coated target 12 can be removed from thechamber 24, transported, stored or otherwise exposed to air or other environmental conditions without losing material of thetarget 12 to corrosion. Specific technologies can impose constraints; for example, line-of-sight transfer is typical of most PVD coating techniques, however there are methods that can permit full coverage using more complex geometries. - Referring to
FIG. 4 , methods for protecting a target source in a deposition tool are illustratively shown in accordance with embodiments of the present invention. Aspects of the present invention are described herein with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and/or block diagrams, and combinations of blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer readable program instructions. - These computer readable program instructions may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions/acts specified in the flowchart and/or block diagram block or blocks. These computer readable program instructions may also be stored in a computer readable storage medium that can direct a computer, a programmable data processing apparatus, and/or other devices to function in a particular manner, such that the computer readable storage medium having instructions stored therein comprises an article of manufacture including instructions which implement aspects of the function/act specified in the flowchart and/or block diagram block or blocks.
- The computer readable program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable apparatus or other device to produce a computer implemented process, such that the instructions which execute on the computer, other programmable apparatus, or other device implement the functions/acts specified in the flowchart and/or block diagram block or blocks.
- The flowchart and block diagrams in the Figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of instructions, which comprises one or more executable instructions for implementing the specified logical function(s). In some alternative implementations, the functions noted in the blocks may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems that perform the specified functions or acts or carry out combinations of special purpose hardware and computer instructions.
- In
block 102, a cleaning process can be performed to remove any contaminants or residue from interior positions of the vacuum chamber of a deposition tool. This can include cleaning an evaporation module as well as a PVD module. In one embodiment, a burn-in process can be performed with a gate of an enclosure housing the evaporation module closed, the PVD module can be run to deposit and flow a target material within the chamber. The physical vapor deposition module can include a sputtering tool or any other module suitable for PVD processing. - In
block 104, with the evaporation module enclosure closed and the vacuum chamber sealed, a thin film can be deposited on a workpiece or workpieces using a target source in the physical vapor deposition module at its operating conditions. The target source can include, e.g., MgO, La or other highly reactive materials. Any suitable process of the PVD module can be employed that uses material from the target source. Any PVD module process using the target to deposit films on a workpiece, e.g., a semiconductor device, a tool, packaging materials, etc. can be employed. - In
block 106, a gate of the evaporation module enclosure is opened to expose an evaporator module to an interior of a vacuum chamber that houses the physical vapor deposition module. This can include opening a gate valve, or other gate mechanism. - In
block 108, a coating is evaporated from the evaporator module onto the target source of the physical vapor deposition module to protect the target source from exposure to reactants. The coating can include a material selected from the group consisting of Ti, Al, Si and Cr, although other metals or metal compounds can be employed. The evaporator module is activated with the enclosure (gate) opened to have evaporated materials settle over exposed portions of the target source to coat the target source with a protective barrier to avoid oxidation and reaction with other materials. - The evaporating of the coating is performed independently of depositing the thin film(s) (which is performed by the PVD module). While these processes could be run together, it is preferable to provide the evaporated coating separately from PVD module processing. The PVD module can be employed again for deposition by closing the gate to reseal the enclosure prior to deposition processing with the PVD module.
- In
block 110, the target source protected by the coating can be removed from the vacuum chamber, exposed to air or other gases in the vacuum chamber, etc. If the target source is well-coated, exposure to air will not degrade the material of the target source. The target source can be transported and even stored (in or out of the chamber) without significant degradation. - In
block 112, when ready for deposition again, the coating is removed from the target source by a removal process (e.g., in chamber). The removal process can include a sputtering process although other removal processes are contemplated depending on the PVD module capabilities. - Having described preferred embodiments PVD methods and tools for deposit of highly reactive materials (which are intended to be illustrative and not limiting), it is noted that modifications and variations can be made by persons skilled in the art in light of the above teachings. It is therefore to be understood that changes may be made in the particular embodiments disclosed which are within the scope of the invention as outlined by the appended claims. Having thus described aspects of the invention, with the details and particularity required by the patent laws, what is claimed and desired protected by Letters Patent is set forth in the appended claims.
Claims (14)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/463,159 US20180269044A1 (en) | 2017-03-20 | 2017-03-20 | Pvd tool to deposit highly reactive materials |
US15/806,454 US20180269045A1 (en) | 2017-03-20 | 2017-11-08 | Pvd tool to deposit highly reactive materials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/463,159 US20180269044A1 (en) | 2017-03-20 | 2017-03-20 | Pvd tool to deposit highly reactive materials |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/806,454 Continuation US20180269045A1 (en) | 2017-03-20 | 2017-11-08 | Pvd tool to deposit highly reactive materials |
Publications (1)
Publication Number | Publication Date |
---|---|
US20180269044A1 true US20180269044A1 (en) | 2018-09-20 |
Family
ID=63519559
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/463,159 Abandoned US20180269044A1 (en) | 2017-03-20 | 2017-03-20 | Pvd tool to deposit highly reactive materials |
US15/806,454 Pending US20180269045A1 (en) | 2017-03-20 | 2017-11-08 | Pvd tool to deposit highly reactive materials |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/806,454 Pending US20180269045A1 (en) | 2017-03-20 | 2017-11-08 | Pvd tool to deposit highly reactive materials |
Country Status (1)
Country | Link |
---|---|
US (2) | US20180269044A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112746260B (en) * | 2020-12-30 | 2023-02-28 | 湖南柯盛新材料有限公司 | Process for manufacturing rotary target material by cold spraying and production equipment thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090236542A1 (en) * | 2006-06-07 | 2009-09-24 | Qinetiq Limited | Optical inspection |
US8030725B1 (en) * | 2010-10-05 | 2011-10-04 | Skyworks Solutions, Inc. | Apparatus and methods for detecting evaporation conditions |
US8436257B2 (en) * | 2010-11-11 | 2013-05-07 | Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. | Electromagnetic shielding article and method for manufacturing same |
US8500978B2 (en) * | 2010-04-14 | 2013-08-06 | Hon Hai Precision Industry Co., Ltd. | Composite coating apparatus |
US8500962B2 (en) * | 2008-07-21 | 2013-08-06 | Ascentool Inc | Deposition system and methods having improved material utilization |
US8500977B2 (en) * | 2009-09-30 | 2013-08-06 | Hon Hai Precision Industry Co., Ltd. | Coating apparatus |
US8691064B2 (en) * | 2007-07-09 | 2014-04-08 | Raytheon Canada Limited | Sputter-enhanced evaporative deposition apparatus and method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3544445A (en) * | 1966-09-01 | 1970-12-01 | Bendix Corp | Floating shield in a triode sputtering apparatus protecting the base from the discharge |
-
2017
- 2017-03-20 US US15/463,159 patent/US20180269044A1/en not_active Abandoned
- 2017-11-08 US US15/806,454 patent/US20180269045A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090236542A1 (en) * | 2006-06-07 | 2009-09-24 | Qinetiq Limited | Optical inspection |
US8691064B2 (en) * | 2007-07-09 | 2014-04-08 | Raytheon Canada Limited | Sputter-enhanced evaporative deposition apparatus and method |
US8500962B2 (en) * | 2008-07-21 | 2013-08-06 | Ascentool Inc | Deposition system and methods having improved material utilization |
US8500977B2 (en) * | 2009-09-30 | 2013-08-06 | Hon Hai Precision Industry Co., Ltd. | Coating apparatus |
US8500978B2 (en) * | 2010-04-14 | 2013-08-06 | Hon Hai Precision Industry Co., Ltd. | Composite coating apparatus |
US8030725B1 (en) * | 2010-10-05 | 2011-10-04 | Skyworks Solutions, Inc. | Apparatus and methods for detecting evaporation conditions |
US8436257B2 (en) * | 2010-11-11 | 2013-05-07 | Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. | Electromagnetic shielding article and method for manufacturing same |
Also Published As
Publication number | Publication date |
---|---|
US20180269045A1 (en) | 2018-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Depla et al. | Reactive sputter deposition | |
KR101355303B1 (en) | Manufacturing method for electronic device, and sputtering method | |
Mattox | Physical vapor deposition (PVD) processes | |
JP5650760B2 (en) | manufacturing device | |
US20070017799A1 (en) | Single-process-chamber deposition system | |
EP2718959B1 (en) | Improvements to the application of coating materials | |
TW201402851A (en) | Method for sputtering for processes with a pre-stabilized plasma | |
JP2005048260A (en) | Reactive sputtering method | |
JP5527894B2 (en) | Sputtering equipment | |
US20180269045A1 (en) | Pvd tool to deposit highly reactive materials | |
JP2010007125A (en) | Film deposition method and film deposition apparatus | |
US20190284683A1 (en) | Apparatus and methods for reduced-arc sputtering | |
Olsson et al. | Reactive dc magnetron sputter deposited Al2O3 films: large-area coatings for industrial applications | |
JP2010001505A (en) | Film-forming apparatus and film-forming method | |
KR20230068373A (en) | Method and device of forming plasma resistant coating, part and plasma processing apparatus | |
Aufderheide | Sputtered thin film coatings | |
US11692262B2 (en) | EM source for enhanced plasma control | |
CN114015997A (en) | Ion-assisted multi-target magnetron sputtering equipment | |
WO2014062338A1 (en) | Chamber pasting method in a pvd chamber for reactive re-sputtering dielectric material | |
JP2009144252A (en) | Reactive sputtering device and reactive sputtering method | |
JP2007314841A (en) | Mask for use in forming film by sputtering, and manufacturing method therefor | |
JP4881335B2 (en) | Sputtering equipment | |
JPH08269705A (en) | Sputtering device | |
JP5632946B2 (en) | Shielding member | |
US11211230B2 (en) | Gas flow system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW Y Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BROWN, STEPHEN L.;DORIS, BRUCE B.;REUTER, MARK C.;REEL/FRAME:041642/0032 Effective date: 20170317 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: ADVISORY ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE AFTER FINAL ACTION FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE AFTER FINAL ACTION FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: ADVISORY ACTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |