KR20070001167A - 반응 금속 소오스 및 치오알루미네이트 포스포스 - Google Patents

반응 금속 소오스 및 치오알루미네이트 포스포스 Download PDF

Info

Publication number
KR20070001167A
KR20070001167A KR1020067017963A KR20067017963A KR20070001167A KR 20070001167 A KR20070001167 A KR 20070001167A KR 1020067017963 A KR1020067017963 A KR 1020067017963A KR 20067017963 A KR20067017963 A KR 20067017963A KR 20070001167 A KR20070001167 A KR 20070001167A
Authority
KR
South Korea
Prior art keywords
barium
metal
aluminum
active species
source materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067017963A
Other languages
English (en)
Korean (ko)
Inventor
쑤 유에 (헬렌)
코스야츠코브 알렉산더
구오 리우
씽웨이 우
아치오네 조
Original Assignee
이화이어 테크놀로지 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이화이어 테크놀로지 코포레이션 filed Critical 이화이어 테크놀로지 코포레이션
Publication of KR20070001167A publication Critical patent/KR20070001167A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Physical Vapour Deposition (AREA)
KR1020067017963A 2004-03-04 2005-03-04 반응 금속 소오스 및 치오알루미네이트 포스포스 Ceased KR20070001167A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54955204P 2004-03-04 2004-03-04
US60/549,552 2004-03-04

Publications (1)

Publication Number Publication Date
KR20070001167A true KR20070001167A (ko) 2007-01-03

Family

ID=34919504

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067017963A Ceased KR20070001167A (ko) 2004-03-04 2005-03-04 반응 금속 소오스 및 치오알루미네이트 포스포스

Country Status (8)

Country Link
US (1) US7622149B2 (https=)
EP (1) EP1721026A4 (https=)
JP (1) JP2007526602A (https=)
KR (1) KR20070001167A (https=)
CN (1) CN1926259B (https=)
CA (1) CA2554756A1 (https=)
TW (1) TW200538564A (https=)
WO (1) WO2005085493A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006045195A1 (en) 2004-10-29 2006-05-04 Ifire Technology Corp. Novel thiosilicate phosphor compositions and deposition methods using barium-silicon vacuum deposition sources for deposition of thiosilicate phosphor films
JP4747751B2 (ja) * 2005-05-09 2011-08-17 三菱マテリアル株式会社 エレクトロルミネッセンス素子における蛍光体膜形成用高強度スパッタリングターゲット
JP5028962B2 (ja) * 2006-11-09 2012-09-19 住友金属鉱山株式会社 Ｅｌ発光層形成用スパッタリングターゲットとその製造方法
JP2010525530A (ja) * 2007-04-30 2010-07-22 アイファイアー・アイピー・コーポレーション 厚膜誘電性エレクトロルミネセントディスプレイ用の積層厚膜誘電体構造
JP5700259B2 (ja) * 2010-02-17 2015-04-15 住友金属鉱山株式会社 透明導電膜の製造方法及び透明導電膜、それを用いた素子、透明導電基板並びにそれを用いたデバイス
CN103289687B (zh) * 2012-02-28 2015-10-28 海洋王照明科技股份有限公司 铈掺杂硫代铝酸盐发光薄膜、制备方法及其应用
US20180269044A1 (en) 2017-03-20 2018-09-20 International Business Machines Corporation Pvd tool to deposit highly reactive materials

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5432015A (en) * 1992-05-08 1995-07-11 Westaim Technologies, Inc. Electroluminescent laminate with thick film dielectric
US5505986A (en) * 1994-02-14 1996-04-09 Planar Systems, Inc. Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices
US5773085A (en) * 1994-07-04 1998-06-30 Nippon Hoso Kyokai Method of manufacturing ternary compound thin films
US6074575A (en) * 1994-11-14 2000-06-13 Mitsui Mining & Smelting Co., Ltd. Thin film electro-luminescence device
WO1999034028A1 (fr) * 1997-12-24 1999-07-08 Kabushiki Kaisha Toshiba CIBLE DE PULVERISATION, FILM D'INTERCONNEXION A BASE D'Al ET COMPOSANT ELECTRONIQUE
JP2001294852A (ja) * 2000-04-14 2001-10-23 Tdk Corp 蛍光体とその製造方法、薄膜の製造装置、およびｅｌ素子
US6793962B2 (en) * 2000-11-17 2004-09-21 Tdk Corporation EL phosphor multilayer thin film and EL device
US6734469B2 (en) * 2000-11-17 2004-05-11 Tdk Corporation EL phosphor laminate thin film and EL device
US6821647B2 (en) * 2001-04-19 2004-11-23 Tdk Corporation Phosphor thin film preparation method, and EL panel
US6447654B1 (en) * 2001-05-29 2002-09-10 Ifire Technology Inc. Single source sputtering of thioaluminate phosphor films
JP3704068B2 (ja) * 2001-07-27 2005-10-05 ザ ウエステイム コーポレイション Ｅｌパネル
US6793782B2 (en) * 2001-12-21 2004-09-21 Ifire Technology Inc. Sputter deposition process for electroluminescent phosphors
US6781304B2 (en) * 2002-01-21 2004-08-24 Tdk Corporation EL panel
JP2003301171A (ja) * 2002-02-06 2003-10-21 Tdk Corp 蛍光体薄膜、その製造方法およびｅｌパネル
CA2478439A1 (en) * 2002-03-27 2003-10-02 Ifire Technology Inc. Yttrium substituted barium thioaluminate phosphor materials
WO2005033360A1 (en) * 2003-10-07 2005-04-14 Ifire Technology Corp. Polysulfide thermal vapour source for thin sulfide film deposition
US8057856B2 (en) * 2004-03-15 2011-11-15 Ifire Ip Corporation Method for gettering oxygen and water during vacuum deposition of sulfide films

Also Published As

Publication number Publication date
CN1926259B (zh) 2011-09-07
CN1926259A (zh) 2007-03-07
JP2007526602A (ja) 2007-09-13
US20050202162A1 (en) 2005-09-15
EP1721026A1 (en) 2006-11-15
US7622149B2 (en) 2009-11-24
CA2554756A1 (en) 2005-09-15
WO2005085493A1 (en) 2005-09-15
EP1721026A4 (en) 2009-11-11
TW200538564A (en) 2005-12-01

Similar Documents

Publication Publication Date Title
JP2009062619A (ja) 多元成膜法
US6447654B1 (en) Single source sputtering of thioaluminate phosphor films
JP2006509911A (ja) 複合スパッタターゲット及び燐光物質の蒸着方法
KR20070001167A (ko) 반응 금속 소오스 및 치오알루미네이트 포스포스
US6793782B2 (en) Sputter deposition process for electroluminescent phosphors
CN100360637C (zh) 受控的硫种类沉积方法
US7597969B2 (en) Oxygen substituted barium thioaluminate phosphor materials
US7556721B2 (en) Thiosilicate phosphor compositions and deposition methods using barium-silicon vacuum deposition sources for deposition of thiosilicate phosphor films

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20060904

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20071002

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20090304

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20110125

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20110429

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20110125

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I