JP2007524000A - 透明で導電性の酸化物膜およびそれの製造法および薄膜太陽電池でのそれの用途 - Google Patents
透明で導電性の酸化物膜およびそれの製造法および薄膜太陽電池でのそれの用途 Download PDFInfo
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- 239000010408 film Substances 0.000 title claims abstract description 97
- 239000010409 thin film Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title description 17
- 238000000034 method Methods 0.000 claims abstract description 82
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011787 zinc oxide Substances 0.000 claims abstract description 26
- 239000002019 doping agent Substances 0.000 claims abstract description 16
- 239000011701 zinc Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 238000005546 reactive sputtering Methods 0.000 claims abstract description 10
- 230000003068 static effect Effects 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000002834 transmittance Methods 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
- 238000005530 etching Methods 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- 239000012528 membrane Substances 0.000 description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
【解決手段】 この課題は、反応性スパッタリングによって基板上に導電性で透明な酸化亜鉛膜を生成し、プロセスにヒステリシス領域を有している方法において、ドーピング剤を含有する金属Znターゲットを使用し、該ターゲットのドーピング剤含有量が2.3原子%より少なく; 基板のための加熱器を、200℃より高い該基板温度に調整される様に調整し;
190nm/分より早い静的溶着速度に相当する50nm*m/分より早い動的溶着速度に調整し;そして安定な金属プロセスと不安定なプロセスとの間の転換点と安定化されたプロセス曲線の屈曲点との間に位置する、不安定なプロセス領域内で安定化した作業点を選択する各段階を含むことを特徴とする、上記方法によって解決される。
Description
J. Mueller et al, State-of-the-art mid-frequency sputtered ZnO films for thin-film silicon solar cells and modules(薄膜珪素太陽電池およびモジュールのための従来技術の中波スパッタリングZnO膜), Thin Solid Films 442 (2003) 158-162. B. Szyszka et al., Transparent and conductive ZnO:Al films deposited by large area reactive magnetron sputtering(反応性電磁管スパタリングにより溶着された透明で導電性のZnO:Al膜)、Thin Solid Films 442 (2003) 179-183.
作業点はヒステリシスの不安定範囲内に位置しておりそしてプロセス制御を必要とする。および
作業点はヒステリシス領域の高い方の領域、即ち金属の領域に同時に位置している。
- 製造される膜のドーパント、特にアルミニウムの含有量は3.5原子%より少なく、 好ましくは3原子%より少なく、特に好ましくは2.5原子%より少なくそして1.5原子%より多い。
- 比抵抗は1×10−3Ωcmより小さく、特に好ましくは5×10−4Ωcmより小さい。
- 電荷キャリヤー可動量(charge carrier mobility)は25cm2/Vsより大きく、特に好ましくは35cm2/Vsより大きい。
- 透過率は80%より多く、特に好ましくは82%より多い。この透過率は膜を有するガラス基板系に有効であり、珪素系ソーラーモジュールに使用できる400nm〜1100nmの間の範囲の平均値である。
領域I:プロセス制御が必要な不安定なプロセス領域
領域A:所望の性質を有する本発明に従って選択される作業点のためのプレセス・ウインドー
領域O:酸化物領域の安定なプロセス・ウインドー
領域M:金属領域の安定なプロセス・ウインドー
U1点:安定な金属プロセスと不安定なプロセスとの間の転移点
U2点:安定な酸化物プロセスと不安定なプロセスとの間の転移点
W点: 安定化されたプロセス曲線の屈曲点
図の下の方の部分には、個々の作業点A1〜A16が、酸素流に対する原子状亜鉛のプラズマ放出(PEM)の強度のプロセス曲線上に記している。作業点は制御変数としての酸素流での一定のPEM−強度によって決定される。点A5〜A7は、本発明の範囲内の特に適しているものとして選択される不安定領域の作業点を示しており、他方、作業点A2〜A4は製造された膜において最適な電気的性質を発現する。
作業点を酸化次第で選択すればする程(PEM強度が低ければ低い程)、赤色および赤外領域での透過率が高い。
これに対して作業点Aaでの膜は太陽電池で使用した時に著しく低い性能水準を生じる明らかに小さい粗面度を有している。
Claims (16)
- 反応性スパッタリングによって基板上に導電性で透明な酸化亜鉛膜を生成し、プロセスにヒステリシス領域を有している方法において、以下の方法段階
− ドーピング剤を含有する金属Znターゲットを使用し、該ターゲットのドーピング剤含有量が2.3原子%より少なく、
− 基板のための加熱器を、200℃より高い該基板温度に調整される様に調整し、
− 190nm/分より早い静的溶着速度に相当する50nm*m/分より早い動的溶着速度に調整しそして
− 安定な金属プロセスと不安定なプロセスとの間の転換点と安定化されたプロセス曲線の屈曲点との間に位置する、不安定なプロセス領域内で安定化した作業点を選択する
を特徴とする、上記方法。 - 1.5原子%より少ない、特に1原子%より少ないドーピング剤含有量のターゲットを使用する、請求項1に記載の方法。
- ドーピング剤としてアルミニウムを含有するターゲットを使用する、請求項1または2に記載の方法。
- 基板を250℃以上の温度、好ましくは300℃以上の温度に加熱する、請求項1〜3のいずれか一つに記載の方法。
- 300nm/分より早い、特に380nm/分より早い静的溶着速度に相当する80nm*m/分より早い、特に100nm*m/分より早い動的溶着速度に調整する、請求項1〜4のいずれか一つに記載の方法。
- 中波(mf)励磁を有する二重電磁管装置を使用する、請求項1〜5のいずれか一つに記載の方法。
- 基板をスパッタリングの間動かす動的進行法として実施する、請求項1〜6のいずれか一つに記載の方法。
- 請求項1〜7のいずれか一つに記載の方法で製造できる導電性で透明な酸化亜鉛膜において、製造された酸化物膜中のドーピング剤、特にアルミニウムの含有量が3.5原子%より少なく、比抵抗が1×10−3Ωcmより小さく、荷電キャリヤーの可動が25cm2/Vsより大きくそして400〜1100nmの平均化透過率が80%より多い、上記酸化物膜。
- ドーピング剤含有量が3原子%より少なく、好ましくは2.5原子%より少ない、請求項8に記載の酸化物膜。
- 比抵抗が5×10−4Ωcmより小さい、請求項8または9に記載の酸化物膜。
- 電荷キャリヤーの可動が35cm2/Vsより大きい、請求項8〜10のいずれか一つに記載の酸化物膜。
- 400〜1100nmの平均化透過率が82%より多い、請求項8〜11のいずれか一つに記載の酸化物膜。
- 膜がドーピング剤としてアルミニウムを含有している、請求項8〜12のいずれか一つに記載の酸化物膜。
- 請求項8〜13のいずれか一つに記載の酸化物膜を太陽電池で用いる方法。
- 結晶質シリコン薄膜太陽電池において用いる請求項14に記載の方法。
- アモルファスおよび結晶質珪素のタンデム型太陽電池で用いる請求項14に従う方法。
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DE102004003760.4A DE102004003760B4 (de) | 2004-01-23 | 2004-01-23 | Verfahren zur Herstellung einer leitfähigen und transparenten Zinkoxidschicht und Verwendung derselben in einer Dünnschichtsolarzelle |
PCT/DE2005/000059 WO2005071131A2 (de) | 2004-01-23 | 2005-01-18 | Transparente und leitfähige oxidschicht, herstellung sowie verwendung derselben in einer dünnschichtsolarzelle |
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US (1) | US20080163917A1 (ja) |
EP (1) | EP1706519B1 (ja) |
JP (1) | JP2007524000A (ja) |
KR (1) | KR20060127081A (ja) |
AU (1) | AU2005206242B2 (ja) |
DE (1) | DE102004003760B4 (ja) |
ES (1) | ES2433495T3 (ja) |
PL (1) | PL1706519T3 (ja) |
WO (1) | WO2005071131A2 (ja) |
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JP2008522982A (ja) * | 2005-09-09 | 2008-07-03 | ザ プロクター アンド ギャンブル カンパニー | 油中水型エマルション系の複数の層を含む固体スキンケア組成物 |
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CN101997040B (zh) * | 2009-08-13 | 2012-12-12 | 杜邦太阳能有限公司 | 用于制造具有带有纹理表面的透明传导氧化物层的多层结构的工艺和借此制成的结构 |
DE102009039777A1 (de) | 2009-09-02 | 2011-03-03 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung und Strukturierung einer Zinkoxidschicht und Zinkoxidschicht |
DE102009040621A1 (de) * | 2009-09-08 | 2011-03-24 | Schott Solar Ag | Dünnschichtsolarmodul und Verfahren zu dessen Herstellung |
DE102009051345B4 (de) * | 2009-10-30 | 2013-07-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer transparenten Elektrode |
DE102009060547A1 (de) * | 2009-12-23 | 2011-06-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Verfahren zum Beschichten eines Substrats mit aluminiumdotiertem Zinkoxid |
DE102010009558A1 (de) * | 2010-02-26 | 2011-09-01 | Von Ardenne Anlagentechnik Gmbh | Verfahren zur Herstellung einer texturierten TCO-Schicht |
KR101084985B1 (ko) * | 2010-03-15 | 2011-11-21 | 한국철강 주식회사 | 플렉서블 기판을 포함하는 광기전력 장치 및 이의 제조 방법 |
KR101194243B1 (ko) * | 2010-04-20 | 2012-10-29 | 한국철강 주식회사 | 탠덤형 광기전력 장치 및 이의 제조 방법 |
DE102010038796B4 (de) * | 2010-08-02 | 2014-02-20 | Von Ardenne Anlagentechnik Gmbh | Dünnschichtsolarzelle und Verfahren zu ihrer Herstellung |
CN102254799B (zh) * | 2011-08-19 | 2013-03-27 | 中国科学院电工研究所 | 一种太阳能电池azo减反射膜制备方法 |
TWI443846B (zh) * | 2011-11-01 | 2014-07-01 | Ind Tech Res Inst | 透明導電層結構 |
CN105931960B (zh) * | 2016-06-22 | 2019-05-03 | 中国科学院电工研究所 | 一种刻蚀掺铝氧化锌薄膜的方法 |
JP7448909B2 (ja) * | 2019-06-27 | 2024-03-13 | 住友重機械工業株式会社 | 成膜方法、及び成膜装置 |
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2004
- 2004-01-23 DE DE102004003760.4A patent/DE102004003760B4/de not_active Expired - Fee Related
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2005
- 2005-01-18 US US10/587,130 patent/US20080163917A1/en not_active Abandoned
- 2005-01-18 JP JP2006549855A patent/JP2007524000A/ja active Pending
- 2005-01-18 WO PCT/DE2005/000059 patent/WO2005071131A2/de active Application Filing
- 2005-01-18 PL PL05706687T patent/PL1706519T3/pl unknown
- 2005-01-18 EP EP05706687.0A patent/EP1706519B1/de not_active Not-in-force
- 2005-01-18 AU AU2005206242A patent/AU2005206242B2/en not_active Ceased
- 2005-01-18 ES ES05706687T patent/ES2433495T3/es active Active
- 2005-01-18 KR KR1020067014912A patent/KR20060127081A/ko not_active Application Discontinuation
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US6107116A (en) * | 1996-04-26 | 2000-08-22 | Canon Kabushiki Kaisha | Method for producing a photovoltaic element with zno layer having increasing fluorine content in layer thickness direction |
JP2002222972A (ja) * | 2001-01-29 | 2002-08-09 | Sharp Corp | 積層型太陽電池 |
JP2003068643A (ja) * | 2001-08-23 | 2003-03-07 | Japan Advanced Inst Of Science & Technology Hokuriku | 結晶性シリコン膜の作製方法及び太陽電池 |
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JP2008522982A (ja) * | 2005-09-09 | 2008-07-03 | ザ プロクター アンド ギャンブル カンパニー | 油中水型エマルション系の複数の層を含む固体スキンケア組成物 |
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Publication number | Publication date |
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DE102004003760A1 (de) | 2005-08-18 |
EP1706519B1 (de) | 2013-08-21 |
WO2005071131A3 (de) | 2005-11-24 |
ES2433495T3 (es) | 2013-12-11 |
US20080163917A1 (en) | 2008-07-10 |
WO2005071131A2 (de) | 2005-08-04 |
AU2005206242A1 (en) | 2005-08-04 |
PL1706519T3 (pl) | 2014-01-31 |
AU2005206242B2 (en) | 2010-07-01 |
KR20060127081A (ko) | 2006-12-11 |
EP1706519A2 (de) | 2006-10-04 |
DE102004003760B4 (de) | 2014-05-22 |
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