JP6979938B2 - 導電性透明アルミニウムドープ酸化亜鉛スパッタ膜 - Google Patents
導電性透明アルミニウムドープ酸化亜鉛スパッタ膜 Download PDFInfo
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- JP6979938B2 JP6979938B2 JP2018219163A JP2018219163A JP6979938B2 JP 6979938 B2 JP6979938 B2 JP 6979938B2 JP 2018219163 A JP2018219163 A JP 2018219163A JP 2018219163 A JP2018219163 A JP 2018219163A JP 6979938 B2 JP6979938 B2 JP 6979938B2
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title description 37
- 239000011787 zinc oxide Substances 0.000 title description 18
- 238000000034 method Methods 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 11
- 230000003746 surface roughness Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000003929 acidic solution Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000006124 Pilkington process Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000005344 low-emissivity glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- KJPHTXTWFHVJIG-UHFFFAOYSA-N n-ethyl-2-[(6-methoxypyridin-3-yl)-(2-methylphenyl)sulfonylamino]-n-(pyridin-3-ylmethyl)acetamide Chemical compound C=1C=C(OC)N=CC=1N(S(=O)(=O)C=1C(=CC=CC=1)C)CC(=O)N(CC)CC1=CC=CN=C1 KJPHTXTWFHVJIG-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
Description
(1)325℃より高い温度においてパルスDCにより堆積されたAZO膜は、膜の底面から上面まで柱状組織が延び、AZO膜の横方向径の小さい結晶粒(基板から膜の上面まで延びる、70nmより幅が狭い結晶粒)をもたらす、緻密な柱状結晶粒構造を示す、
(2)AZO膜の比抵抗は375nmより大きい膜厚に依存しない、
(3)膜は大きな電子易動度にかかわらず小さい光吸収を有する、
(4)膜は450℃まで電気的劣化がない改善された温度安定性を有する、及び
(5)膜は改善された化学的耐久性を有する、
を有する。
(1)325℃より高い温度においてパルスDCにより堆積されたAZO膜は、AZO膜の横方向結晶粒径を小さくする、柱状結晶粒構造(基板から膜の最上面まで延びる、70nmより直径が小さい柱状構造)を示す、
(2)AZO膜の比抵抗は375nmより大きい膜厚に依存しない、
(3)膜は大きな電子易動度にかかわらず小さい光吸収を有する、
(4)膜は熱的により安定であり、450℃まで電気的劣化がない、及び
(5)膜は改善された化学的耐久性を有する、
を有する。
ショートスロークライオポンプで真空引きされるPVDシステムに直径12.9インチ(32.8cm)の酸化物ターゲットを装着し、パルスDC電源でスパッタして、150mm径ガラス基板上にAZO膜を堆積した。基板をステンレス鋼ヒータに機械的にクランプし、裏面アルゴンで425℃まで加熱した。パルスDCスパッタリングは、パルス周波数に無関係に、スパッタ電圧をパルスデューティサイクルに線形依存して実効的に低下させることでターゲットアーキングが無くなることが分かった。
Claims (4)
- AZO膜を堆積するための方法であって、
ZnO内にAl2O3が1.0重量%含まれる組成をもつ酸化物ターゲットを提供する工程と、
400℃より高い温度でパルスDC電圧を印加して前記酸化物ターゲットをスパッタすることにより、AZO膜を堆積する工程、
を有する方法。 - 前記パルスDC電圧を印加することが、40%より大きいデューティサイクルを持つパルスを印加することを含む、請求項1に記載の方法。
- 前記堆積する工程がさらに、1W/cm2と2W/cm2の間の電力密度を有するプラズマを形成すること含む、請求項1または2に記載の方法。
- プロセス圧力は10mTorr(1.33Pa)より低いことを特徴とする、請求項1から3のいずれか一項に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261710848P | 2012-10-08 | 2012-10-08 | |
US61/710,848 | 2012-10-08 | ||
US201261731172P | 2012-11-29 | 2012-11-29 | |
US61/731,172 | 2012-11-29 | ||
JP2015535817A JP2015535892A (ja) | 2012-10-08 | 2013-10-04 | 導電性透明アルミニウムドープ酸化亜鉛スパッタ膜 |
Related Parent Applications (1)
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JP2015535817A Division JP2015535892A (ja) | 2012-10-08 | 2013-10-04 | 導電性透明アルミニウムドープ酸化亜鉛スパッタ膜 |
Publications (2)
Publication Number | Publication Date |
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JP2019056181A JP2019056181A (ja) | 2019-04-11 |
JP6979938B2 true JP6979938B2 (ja) | 2021-12-15 |
Family
ID=49356542
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JP2015535817A Pending JP2015535892A (ja) | 2012-10-08 | 2013-10-04 | 導電性透明アルミニウムドープ酸化亜鉛スパッタ膜 |
JP2018219163A Active JP6979938B2 (ja) | 2012-10-08 | 2018-11-22 | 導電性透明アルミニウムドープ酸化亜鉛スパッタ膜 |
JP2019106108A Pending JP2019167629A (ja) | 2012-10-08 | 2019-06-06 | 導電性透明アルミニウムドープ酸化亜鉛スパッタ膜 |
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Country Status (5)
Country | Link |
---|---|
US (2) | US9984786B2 (ja) |
EP (1) | EP2904128A1 (ja) |
JP (3) | JP2015535892A (ja) |
CN (1) | CN105051244B (ja) |
WO (1) | WO2014058726A1 (ja) |
Families Citing this family (2)
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US9927667B2 (en) | 2014-08-11 | 2018-03-27 | Sci Engineered Materials, Inc. | Display having a transparent conductive oxide layer comprising metal doped zinc oxide applied by sputtering |
DE102017102377B4 (de) * | 2017-02-07 | 2019-08-22 | Schott Ag | Schutzverglasung, thermisches Prozessaggregat und Verfahren zur Herstellung einer Schutzverglasung |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0731950B2 (ja) * | 1985-11-22 | 1995-04-10 | 株式会社リコー | 透明導電膜の製造方法 |
JP2002025350A (ja) * | 2000-07-11 | 2002-01-25 | Sanyo Electric Co Ltd | 透明導電膜付き基板及びその作製方法,それを用いたエッチング方法並びに光起電力装置 |
KR101150142B1 (ko) * | 2006-04-06 | 2012-06-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 대형 기판 상에 아연 산화물 투명 전도성 산화물의 반응성 스퍼터링 |
JP2007311041A (ja) * | 2006-05-16 | 2007-11-29 | Bridgestone Corp | 結晶性ZnO系透明導電薄膜の成膜方法、結晶性ZnO系透明導電薄膜及びフィルム、並びに抵抗膜式タッチパネル |
TW200834610A (en) * | 2007-01-10 | 2008-08-16 | Nitto Denko Corp | Transparent conductive film and method for producing the same |
CN101548343A (zh) * | 2007-09-05 | 2009-09-30 | 株式会社村田制作所 | 透明导电膜及透明导电膜的制造方法 |
US8133359B2 (en) * | 2007-11-16 | 2012-03-13 | Advanced Energy Industries, Inc. | Methods and apparatus for sputtering deposition using direct current |
JP2009140626A (ja) * | 2007-12-04 | 2009-06-25 | Sony Corp | 透明導電性薄膜及びその製造方法 |
WO2009140362A2 (en) | 2008-05-13 | 2009-11-19 | The Ohio State University Research Foundation | Lanthanum oxide-dope glass-ceramics |
KR20120027008A (ko) * | 2009-06-03 | 2012-03-20 | 가부시키가이샤 니콘 | 피막 형성물 및 피막 형성물의 제조 방법 |
EP2290704A1 (en) * | 2009-08-27 | 2011-03-02 | Applied Materials, Inc. | Passivation layer for wafer based solar cells and method of manufacturing thereof |
CN101660120A (zh) * | 2009-09-15 | 2010-03-03 | 中国科学院上海硅酸盐研究所 | 多元素掺杂的n型氧化锌基透明导电薄膜及其制备方法 |
DE102009060547A1 (de) * | 2009-12-23 | 2011-06-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Verfahren zum Beschichten eines Substrats mit aluminiumdotiertem Zinkoxid |
US20110220198A1 (en) | 2010-03-31 | 2011-09-15 | Stion Corporation | Method and Device Utilizing Strained AZO Layer and Interfacial Fermi Level Pinning in Bifacial Thin Film PV Cells |
JP5729595B2 (ja) * | 2011-03-11 | 2015-06-03 | 三菱マテリアル株式会社 | 太陽電池用透明導電膜およびその製造方法 |
JP2013008817A (ja) * | 2011-06-24 | 2013-01-10 | Toshiba Corp | 半導体発光素子及びその製造方法 |
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2013
- 2013-10-04 US US14/434,229 patent/US9984786B2/en active Active
- 2013-10-04 JP JP2015535817A patent/JP2015535892A/ja active Pending
- 2013-10-04 WO PCT/US2013/063414 patent/WO2014058726A1/en active Application Filing
- 2013-10-04 CN CN201380063481.4A patent/CN105051244B/zh not_active Expired - Fee Related
- 2013-10-04 EP EP13776932.9A patent/EP2904128A1/en not_active Withdrawn
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2018
- 2018-04-26 US US15/963,437 patent/US20180247726A1/en not_active Abandoned
- 2018-11-22 JP JP2018219163A patent/JP6979938B2/ja active Active
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Also Published As
Publication number | Publication date |
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EP2904128A1 (en) | 2015-08-12 |
JP2019167629A (ja) | 2019-10-03 |
US20180247726A1 (en) | 2018-08-30 |
US20150279500A1 (en) | 2015-10-01 |
WO2014058726A1 (en) | 2014-04-17 |
JP2019056181A (ja) | 2019-04-11 |
JP2015535892A (ja) | 2015-12-17 |
CN105051244A (zh) | 2015-11-11 |
US9984786B2 (en) | 2018-05-29 |
CN105051244B (zh) | 2018-11-16 |
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