JP2007523034A5 - - Google Patents

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Publication number
JP2007523034A5
JP2007523034A5 JP2006551053A JP2006551053A JP2007523034A5 JP 2007523034 A5 JP2007523034 A5 JP 2007523034A5 JP 2006551053 A JP2006551053 A JP 2006551053A JP 2006551053 A JP2006551053 A JP 2006551053A JP 2007523034 A5 JP2007523034 A5 JP 2007523034A5
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JP
Japan
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JP2006551053A
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JP2007523034A (ja
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Priority claimed from US10/766,872 external-priority patent/US7115993B2/en
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Publication of JP2007523034A publication Critical patent/JP2007523034A/ja
Publication of JP2007523034A5 publication Critical patent/JP2007523034A5/ja
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JP2006551053A 2004-01-30 2004-12-17 アモルファスカーボン膜を含む構造およびその形成方法。 Withdrawn JP2007523034A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/766,872 US7115993B2 (en) 2004-01-30 2004-01-30 Structure comprising amorphous carbon film and method of forming thereof
PCT/US2004/039771 WO2005074449A2 (en) 2004-01-30 2004-12-17 Structure comprising amorphous carbon film and method of forming thereof

Publications (2)

Publication Number Publication Date
JP2007523034A JP2007523034A (ja) 2007-08-16
JP2007523034A5 true JP2007523034A5 (ja) 2008-01-31

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ID=34807608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006551053A Withdrawn JP2007523034A (ja) 2004-01-30 2004-12-17 アモルファスカーボン膜を含む構造およびその形成方法。

Country Status (4)

Country Link
US (1) US7115993B2 (ja)
JP (1) JP2007523034A (ja)
TW (1) TWI280987B (ja)
WO (1) WO2005074449A2 (ja)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7504727B2 (en) * 2004-05-14 2009-03-17 International Business Machines Corporation Semiconductor interconnect structure utilizing a porous dielectric material as an etch stop layer between adjacent non-porous dielectric materials
US7371461B2 (en) * 2005-01-13 2008-05-13 International Business Machines Corporation Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics
US7291553B2 (en) * 2005-03-08 2007-11-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming dual damascene with improved etch profiles
US7857982B2 (en) * 2005-07-19 2010-12-28 Micron Technology, Inc. Methods of etching features into substrates
US7323401B2 (en) * 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7422975B2 (en) * 2005-08-18 2008-09-09 Sony Corporation Composite inter-level dielectric structure for an integrated circuit
JP4543392B2 (ja) * 2005-11-01 2010-09-15 エルピーダメモリ株式会社 半導体装置の製造方法
US7602068B2 (en) 2006-01-19 2009-10-13 International Machines Corporation Dual-damascene process to fabricate thick wire structure
US7563688B2 (en) * 2006-02-24 2009-07-21 Hynix Semiconductor Inc. Method for fabricating capacitor in semiconductor device
US20070243714A1 (en) * 2006-04-18 2007-10-18 Applied Materials, Inc. Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step
US7867578B2 (en) * 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
US8129282B2 (en) 2006-07-19 2012-03-06 Tokyo Electron Limited Plasma etching method and computer-readable storage medium
JP2008028022A (ja) * 2006-07-19 2008-02-07 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US20080124912A1 (en) * 2006-08-01 2008-05-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor methods
US7960797B2 (en) * 2006-08-29 2011-06-14 Micron Technology, Inc. Semiconductor devices including fine pitch arrays with staggered contacts
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
JP4237216B2 (ja) * 2006-10-05 2009-03-11 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
EP2109880A4 (en) * 2007-02-05 2012-07-04 Bae Sys Inf & Elect Sys Integ SUBSEQUENTLY SUPPORTED MICROBOLOMETER PIXEL
US7763987B2 (en) 2007-02-27 2010-07-27 Qimonda Ag Integrated circuit and methods of manufacturing a contact arrangement and an interconnection arrangement
US8409460B2 (en) 2007-02-28 2013-04-02 Tokyo Electron Limited Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage medium
KR20100028544A (ko) * 2007-05-03 2010-03-12 램 리써치 코포레이션 하드마스크 개구 및 하드마스크 개구에 의한 에칭 프로파일 제어
US7858514B2 (en) 2007-06-29 2010-12-28 Qimonda Ag Integrated circuit, intermediate structure and a method of fabricating a semiconductor structure
US8021933B2 (en) 2007-08-29 2011-09-20 Qimonda Ag Integrated circuit including structures arranged at different densities and method of forming the same
US8084862B2 (en) * 2007-09-20 2011-12-27 International Business Machines Corporation Interconnect structures with patternable low-k dielectrics and method of fabricating same
US8618663B2 (en) * 2007-09-20 2013-12-31 International Business Machines Corporation Patternable dielectric film structure with improved lithography and method of fabricating same
US7709370B2 (en) * 2007-09-20 2010-05-04 International Business Machines Corporation Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
US8298931B2 (en) * 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
US9136463B2 (en) * 2007-11-20 2015-09-15 Qualcomm Incorporated Method of forming a magnetic tunnel junction structure
DE102008016425B4 (de) * 2008-03-31 2015-11-19 Advanced Micro Devices, Inc. Verfahren zur Strukturierung einer Metallisierungsschicht durch Verringerung der durch Lackentfernung hervorgerufenen Schäden des dielektrischen Materials
JP4882055B2 (ja) * 2008-04-11 2012-02-22 スパンション エルエルシー 半導体装置の製造方法
JP4876231B2 (ja) * 2008-04-11 2012-02-15 スパンション エルエルシー 半導体装置の製造方法
US20090266790A1 (en) * 2008-04-28 2009-10-29 Hamid Balamane Method of making a magnetoresistive reader structure
US9245792B2 (en) * 2008-07-25 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming interconnect structures
US8227339B2 (en) 2009-11-02 2012-07-24 International Business Machines Corporation Creation of vias and trenches with different depths
JP5411171B2 (ja) * 2010-02-05 2014-02-12 東京エレクトロン株式会社 アモルファスカーボン膜を含む積層構造を形成する方法
US8592321B2 (en) * 2011-06-08 2013-11-26 United Microelectronics Corp. Method for fabricating an aperture
US8759234B2 (en) 2011-10-17 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Deposited material and method of formation
JP5772508B2 (ja) 2011-10-27 2015-09-02 東京エレクトロン株式会社 成膜装置及びその運用方法
JP5807511B2 (ja) 2011-10-27 2015-11-10 東京エレクトロン株式会社 成膜装置及びその運用方法
US9230854B2 (en) 2013-04-08 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9502365B2 (en) * 2013-12-31 2016-11-22 Texas Instruments Incorporated Opening in a multilayer polymeric dielectric layer without delamination
FR3018951B1 (fr) * 2014-03-18 2017-06-09 Commissariat Energie Atomique Procede de gravure d'un materiau dielectrique poreux
CN105226049B (zh) * 2014-06-26 2019-02-26 中芯国际集成电路制造(上海)有限公司 用于互连层结构的掩膜组件及互连层的制作方法
US9437484B2 (en) * 2014-10-17 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Etch stop layer in integrated circuits
US9859127B1 (en) * 2016-06-10 2018-01-02 Lam Research Corporation Line edge roughness improvement with photon-assisted plasma process
US9997555B2 (en) * 2016-08-02 2018-06-12 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Fabrication method for digital etching of nanometer-scale level structures
US11764062B2 (en) * 2017-11-13 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure
US10529586B2 (en) * 2018-05-25 2020-01-07 Nanya Technology Corporation Method of manufacturing semiconductor device
US11942371B2 (en) * 2020-09-29 2024-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Etch profile control of via opening

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6573030B1 (en) * 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
US7226853B2 (en) * 2001-12-26 2007-06-05 Applied Materials, Inc. Method of forming a dual damascene structure utilizing a three layer hard mask structure
JP4058327B2 (ja) * 2002-10-18 2008-03-05 富士通株式会社 半導体装置の製造方法
US7129180B2 (en) * 2003-09-12 2006-10-31 Micron Technology, Inc. Masking structure having multiple layers including an amorphous carbon layer

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