JP2007520634A5 - - Google Patents

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Publication number
JP2007520634A5
JP2007520634A5 JP2006552243A JP2006552243A JP2007520634A5 JP 2007520634 A5 JP2007520634 A5 JP 2007520634A5 JP 2006552243 A JP2006552243 A JP 2006552243A JP 2006552243 A JP2006552243 A JP 2006552243A JP 2007520634 A5 JP2007520634 A5 JP 2007520634A5
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JP
Japan
Prior art keywords
region
target structure
flange
sputter
front surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006552243A
Other languages
English (en)
Japanese (ja)
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JP2007520634A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2005/003437 external-priority patent/WO2005074640A2/en
Publication of JP2007520634A publication Critical patent/JP2007520634A/ja
Publication of JP2007520634A5 publication Critical patent/JP2007520634A5/ja
Pending legal-status Critical Current

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JP2006552243A 2004-02-03 2005-02-02 物理蒸着用ターゲット構造物 Pending JP2007520634A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54166504P 2004-02-03 2004-02-03
PCT/US2005/003437 WO2005074640A2 (en) 2004-02-03 2005-02-02 Physical vapor deposition target constructions

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012188231A Division JP5651145B2 (ja) 2004-02-03 2012-08-29 物理蒸着用ターゲット構造物

Publications (2)

Publication Number Publication Date
JP2007520634A JP2007520634A (ja) 2007-07-26
JP2007520634A5 true JP2007520634A5 (https=) 2008-03-06

Family

ID=34837509

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006552243A Pending JP2007520634A (ja) 2004-02-03 2005-02-02 物理蒸着用ターゲット構造物
JP2012188231A Expired - Fee Related JP5651145B2 (ja) 2004-02-03 2012-08-29 物理蒸着用ターゲット構造物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012188231A Expired - Fee Related JP5651145B2 (ja) 2004-02-03 2012-08-29 物理蒸着用ターゲット構造物

Country Status (7)

Country Link
US (1) US7618520B2 (https=)
EP (1) EP1711646A4 (https=)
JP (2) JP2007520634A (https=)
KR (1) KR20060123504A (https=)
CN (1) CN1910304A (https=)
TW (1) TWI381061B (https=)
WO (1) WO2005074640A2 (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
EP2236644A3 (en) * 2004-11-17 2012-01-04 JX Nippon Mining & Metals Corporation Sputtering target backing plate assembly and film deposition system
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20080236499A1 (en) * 2007-03-30 2008-10-02 Jean-Pierre Blanchet Vent groove modified sputter target assembly and apparatus containing same
KR20080106463A (ko) * 2006-04-04 2008-12-05 프랙스에어 테크놀로지, 인코포레이티드 변형된 벤트 홈을 갖는 스퍼터 타겟 조립체
TWI417407B (zh) * 2006-04-04 2013-12-01 Praxair Technology Inc 通氣槽改良之濺鍍靶材組成件及含有此濺鍍靶材組成件之裝置
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US20080067058A1 (en) * 2006-09-15 2008-03-20 Stimson Bradley O Monolithic target for flat panel application
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
FR2913429B1 (fr) * 2007-03-05 2009-04-17 H E F Soc Par Actions Simplifi Procede d'assemblage d'au moins deux plaques et utilisation du procede pour la realisation d'un ensemble de pulverisation ionique.
US8002874B2 (en) 2007-03-06 2011-08-23 Membrane Technology And Research, Inc. Liquid-phase and vapor-phase dehydration of organic/water solutions
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8398833B2 (en) * 2008-04-21 2013-03-19 Honeywell International Inc. Use of DC magnetron sputtering systems
US20120027954A1 (en) * 2010-07-30 2012-02-02 Applied Materials, Inc. Magnet for physical vapor deposition processes to produce thin films having low resistivity and non-uniformity
US8968537B2 (en) * 2011-02-09 2015-03-03 Applied Materials, Inc. PVD sputtering target with a protected backing plate
TWI515320B (zh) 2012-04-26 2016-01-01 因特瓦克公司 供物理氣相沈積製程使用之窄型濺鍍源
US9633824B2 (en) 2013-03-05 2017-04-25 Applied Materials, Inc. Target for PVD sputtering system
US9534286B2 (en) * 2013-03-15 2017-01-03 Applied Materials, Inc. PVD target for self-centering process shield
US9831075B2 (en) 2013-09-17 2017-11-28 Applied Materials, Inc. Source magnet for improved resputtering uniformity in direct current (DC) physical vapor deposition (PVD) processes
US9960021B2 (en) * 2013-12-18 2018-05-01 Applied Materials, Inc. Physical vapor deposition (PVD) target having low friction pads
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
JP6909645B2 (ja) * 2017-06-21 2021-07-28 スタンレー電気株式会社 スパッタリングターゲット、および、車両用灯具の製造方法
CN108486535B (zh) * 2018-05-17 2021-03-12 宁波江丰电子材料股份有限公司 靶材组件
USD1037954S1 (en) 2020-10-23 2024-08-06 Applied Materials, Inc. Self-retained low friction pad
US11618943B2 (en) * 2020-10-23 2023-04-04 Applied Materials, Inc. PVD target having self-retained low friction pads
KR102559553B1 (ko) * 2020-12-08 2023-07-26 (주)지오엘리먼트 상면 보강부를 구비한 스퍼터링 타겟 및 이의 제조방법
US12252777B2 (en) * 2021-05-07 2025-03-18 Taiwan Semiconductor Manufacturing Company Limited Physical vapor deposition (PVD) system and method of processing target
US20240068086A1 (en) * 2022-08-29 2024-02-29 Applied Materials, Inc. Physical Vapor Deposition (PVD) Chamber Titanium-Tungsten (TiW) Target For Particle Improvement
US12467127B2 (en) * 2023-09-01 2025-11-11 Applied Materials, Inc. Molybdenum monolithic physical vapor deposition target

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JPH051374A (ja) * 1991-02-05 1993-01-08 Toshiba Corp スパツタリング装置
EP0824760A1 (en) * 1995-05-11 1998-02-25 Materials Research Corporation Sputtering apparatus with isolated coolant and sputtering target therefor
JPH09176849A (ja) * 1995-12-22 1997-07-08 Applied Materials Inc スパッタリングターゲットのアッセンブリ
US5658442A (en) * 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US6045670A (en) * 1997-01-08 2000-04-04 Applied Materials, Inc. Back sputtering shield
US5935397A (en) * 1998-04-30 1999-08-10 Rockwell Semiconductor Systems, Inc. Physical vapor deposition chamber
US6149776A (en) * 1998-11-12 2000-11-21 Applied Materials, Inc. Copper sputtering target
US6416634B1 (en) * 2000-04-05 2002-07-09 Applied Materials, Inc. Method and apparatus for reducing target arcing during sputter deposition
JP3972558B2 (ja) * 2000-06-23 2007-09-05 松下電器産業株式会社 スパッタリング装置
US20020162741A1 (en) * 2001-05-01 2002-11-07 Applied Materials, Inc. Multi-material target backing plate
JP2003293126A (ja) * 2002-04-09 2003-10-15 Fujitsu Ltd スパッタリングターゲット及びその製造方法

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