TWI381061B - 物理氣相沉積靶材結構 - Google Patents

物理氣相沉積靶材結構 Download PDF

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Publication number
TWI381061B
TWI381061B TW094103443A TW94103443A TWI381061B TW I381061 B TWI381061 B TW I381061B TW 094103443 A TW094103443 A TW 094103443A TW 94103443 A TW94103443 A TW 94103443A TW I381061 B TWI381061 B TW I381061B
Authority
TW
Taiwan
Prior art keywords
target structure
region
target
ring
flange
Prior art date
Application number
TW094103443A
Other languages
English (en)
Chinese (zh)
Other versions
TW200535267A (en
Inventor
Stephane Ferrasse
Frank Alford
Susanne I Grabmeier
Werner Hort
Jaeyeon Kim
Susan D Strothers
Andrew Wragg
Robert M Prater
Michael D Payton
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of TW200535267A publication Critical patent/TW200535267A/zh
Application granted granted Critical
Publication of TWI381061B publication Critical patent/TWI381061B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW094103443A 2004-02-03 2005-02-03 物理氣相沉積靶材結構 TWI381061B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54166504P 2004-02-03 2004-02-03

Publications (2)

Publication Number Publication Date
TW200535267A TW200535267A (en) 2005-11-01
TWI381061B true TWI381061B (zh) 2013-01-01

Family

ID=34837509

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094103443A TWI381061B (zh) 2004-02-03 2005-02-03 物理氣相沉積靶材結構

Country Status (7)

Country Link
US (1) US7618520B2 (https=)
EP (1) EP1711646A4 (https=)
JP (2) JP2007520634A (https=)
KR (1) KR20060123504A (https=)
CN (1) CN1910304A (https=)
TW (1) TWI381061B (https=)
WO (1) WO2005074640A2 (https=)

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US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
EP2236644A3 (en) * 2004-11-17 2012-01-04 JX Nippon Mining & Metals Corporation Sputtering target backing plate assembly and film deposition system
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20080236499A1 (en) * 2007-03-30 2008-10-02 Jean-Pierre Blanchet Vent groove modified sputter target assembly and apparatus containing same
KR20080106463A (ko) * 2006-04-04 2008-12-05 프랙스에어 테크놀로지, 인코포레이티드 변형된 벤트 홈을 갖는 스퍼터 타겟 조립체
TWI417407B (zh) * 2006-04-04 2013-12-01 Praxair Technology Inc 通氣槽改良之濺鍍靶材組成件及含有此濺鍍靶材組成件之裝置
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US20080067058A1 (en) * 2006-09-15 2008-03-20 Stimson Bradley O Monolithic target for flat panel application
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
FR2913429B1 (fr) * 2007-03-05 2009-04-17 H E F Soc Par Actions Simplifi Procede d'assemblage d'au moins deux plaques et utilisation du procede pour la realisation d'un ensemble de pulverisation ionique.
US8002874B2 (en) 2007-03-06 2011-08-23 Membrane Technology And Research, Inc. Liquid-phase and vapor-phase dehydration of organic/water solutions
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8398833B2 (en) * 2008-04-21 2013-03-19 Honeywell International Inc. Use of DC magnetron sputtering systems
US20120027954A1 (en) * 2010-07-30 2012-02-02 Applied Materials, Inc. Magnet for physical vapor deposition processes to produce thin films having low resistivity and non-uniformity
US8968537B2 (en) * 2011-02-09 2015-03-03 Applied Materials, Inc. PVD sputtering target with a protected backing plate
TWI515320B (zh) 2012-04-26 2016-01-01 因特瓦克公司 供物理氣相沈積製程使用之窄型濺鍍源
US9633824B2 (en) 2013-03-05 2017-04-25 Applied Materials, Inc. Target for PVD sputtering system
US9534286B2 (en) * 2013-03-15 2017-01-03 Applied Materials, Inc. PVD target for self-centering process shield
US9831075B2 (en) 2013-09-17 2017-11-28 Applied Materials, Inc. Source magnet for improved resputtering uniformity in direct current (DC) physical vapor deposition (PVD) processes
US9960021B2 (en) * 2013-12-18 2018-05-01 Applied Materials, Inc. Physical vapor deposition (PVD) target having low friction pads
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
JP6909645B2 (ja) * 2017-06-21 2021-07-28 スタンレー電気株式会社 スパッタリングターゲット、および、車両用灯具の製造方法
CN108486535B (zh) * 2018-05-17 2021-03-12 宁波江丰电子材料股份有限公司 靶材组件
USD1037954S1 (en) 2020-10-23 2024-08-06 Applied Materials, Inc. Self-retained low friction pad
US11618943B2 (en) * 2020-10-23 2023-04-04 Applied Materials, Inc. PVD target having self-retained low friction pads
KR102559553B1 (ko) * 2020-12-08 2023-07-26 (주)지오엘리먼트 상면 보강부를 구비한 스퍼터링 타겟 및 이의 제조방법
US12252777B2 (en) * 2021-05-07 2025-03-18 Taiwan Semiconductor Manufacturing Company Limited Physical vapor deposition (PVD) system and method of processing target
US20240068086A1 (en) * 2022-08-29 2024-02-29 Applied Materials, Inc. Physical Vapor Deposition (PVD) Chamber Titanium-Tungsten (TiW) Target For Particle Improvement
US12467127B2 (en) * 2023-09-01 2025-11-11 Applied Materials, Inc. Molybdenum monolithic physical vapor deposition target

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WO1996036065A1 (en) * 1995-05-11 1996-11-14 Materials Research Corporation Sputtering apparatus with isolated coolant and sputtering target therefor
US6045670A (en) * 1997-01-08 2000-04-04 Applied Materials, Inc. Back sputtering shield

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JPH051374A (ja) * 1991-02-05 1993-01-08 Toshiba Corp スパツタリング装置
JPH09176849A (ja) * 1995-12-22 1997-07-08 Applied Materials Inc スパッタリングターゲットのアッセンブリ
US5658442A (en) * 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US5935397A (en) * 1998-04-30 1999-08-10 Rockwell Semiconductor Systems, Inc. Physical vapor deposition chamber
US6149776A (en) * 1998-11-12 2000-11-21 Applied Materials, Inc. Copper sputtering target
US6416634B1 (en) * 2000-04-05 2002-07-09 Applied Materials, Inc. Method and apparatus for reducing target arcing during sputter deposition
JP3972558B2 (ja) * 2000-06-23 2007-09-05 松下電器産業株式会社 スパッタリング装置
US20020162741A1 (en) * 2001-05-01 2002-11-07 Applied Materials, Inc. Multi-material target backing plate
JP2003293126A (ja) * 2002-04-09 2003-10-15 Fujitsu Ltd スパッタリングターゲット及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996036065A1 (en) * 1995-05-11 1996-11-14 Materials Research Corporation Sputtering apparatus with isolated coolant and sputtering target therefor
US6045670A (en) * 1997-01-08 2000-04-04 Applied Materials, Inc. Back sputtering shield

Also Published As

Publication number Publication date
WO2005074640A2 (en) 2005-08-18
CN1910304A (zh) 2007-02-07
TW200535267A (en) 2005-11-01
EP1711646A4 (en) 2008-05-28
EP1711646A2 (en) 2006-10-18
JP2012255218A (ja) 2012-12-27
WO2005074640A3 (en) 2006-03-09
US7618520B2 (en) 2009-11-17
KR20060123504A (ko) 2006-12-01
US20060070876A1 (en) 2006-04-06
JP5651145B2 (ja) 2015-01-07
JP2007520634A (ja) 2007-07-26

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MM4A Annulment or lapse of patent due to non-payment of fees