JP2007516611A - Encapsulation assembly for electronic devices - Google Patents

Abstract

An encapsulation assembly useful for an electronic device having a substrate and an electrically active region is described, the encapsulation assembly comprising a barrier sheet and a barrier structure extending from the sheet, the barrier structure used on the electronic device When configured, the electronic device is configured to substantially seal. In some embodiments, the barrier structure is designed to be used with an adhesive to bond the encapsulation assembly to the electronic device. In some cases, gettering materials can be used.

Description

  The present invention generally relates to an encapsulation assembly for an electronic device for preventing exposure of the electronic device to contaminants.

(Cross-reference of related applications)
This application claims priority from US Provisional Application No. 60 / 519,139, filed Nov. 12, 2003. This is incorporated herein by reference.

  Many electronic devices require protection from moisture and, in some cases, oxygen, hydrogen, and / or organic vapors to prevent various types of degradation. Such devices include organic light emitting diode (“OLED”) devices based on polymer or small molecule structures, microelectronic devices based on silicon IC technology, and MEMS devices based on silicon microfabrication. Exposure to the atmosphere can cause cathode degradation due to oxide or hydroxide formation (leading to performance / brightness degradation), corrosion, or static friction, respectively. There are hermetic packaging and sealing techniques that address this problem, but these have limited performance life and productivity, leading to high costs.

US patent application Ser. No. 10/712670 US Provisional Application No. 60/519139

Provided is an encapsulation assembly for an electronic device having a substrate and an active region, the encapsulation assembly comprising:
Barrier sheet, and
A barrier structure extending from the sheet;
The barrier structure is configured to substantially seal the electronic device when the barrier structure is used on the electronic device when used in conjunction with an adhesive to bond the encapsulation assembly to the device substrate; and The barrier structure does not fuse to the device substrate. In one embodiment, the barrier structure is configured to avoid direct contact with the electronic device substrate when the device is bonded to the encapsulation assembly.

Further provided is an encapsulation assembly for an electronic device comprising a substrate further having an encapsulation structure and an active region, the encapsulation assembly comprising:
A barrier sheet having a substantially flat surface, and
A barrier structure extending from the flat surface;
When used on an electronic device, the barrier structure is configured to substantially seal the electronic device, and the barrier structure is configured to engage a sealing structure on the device substrate. .

  In an alternative method, provided is an encapsulation assembly for an electronic device having a substrate and further comprising a barrier structure extending from outside the substrate and the active region, wherein the encapsulation assembly is substantially A barrier sheet having a flat surface and a sealing structure, wherein the sealing structure is configured to engage the barrier structure on the device substrate.

In another embodiment, provided is an encapsulation assembly for an electronic device having a substrate and an active region, the encapsulation assembly comprising:
Barrier sheet, and
Comprising a barrier structure extending from the surface of the sheet;
The barrier structure further includes a heating element, and the barrier structure is configured to substantially seal the electronic device when used on the electronic device.

  Further provided is an electronic device having such an encapsulation assembly.

  The foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as set forth in the appended claims.

  The present invention is illustrated by example, but is not limited to the attached drawings.

Provided is an encapsulation assembly for an electronic device having a substrate and an active region, the encapsulation assembly comprising:
Barrier sheet, and
A barrier structure extending from the sheet;
The barrier structure is configured to substantially seal the electronic device when the barrier structure is used on the electronic device when used in conjunction with an adhesive to bond the encapsulation assembly to the device substrate; and The barrier structure does not fuse to the device substrate. In one embodiment, the barrier structure is configured to avoid direct contact with the electronic device substrate when the device is bonded to the encapsulation assembly.

Further provided is an encapsulation assembly for an electronic device comprising a substrate further having a sealing structure and an active region, the encapsulation assembly comprising:
A barrier sheet having a substantially flat surface, and
A barrier structure extending from the flat surface;
When used on an electronic device, the barrier structure is configured to substantially seal the electronic device, and the barrier structure is configured to engage a sealing structure on the device substrate.

  In an alternative method, provided is an encapsulation assembly for an electronic device having a substrate and further having a barrier structure extending from outside the substrate and the active region, the encapsulation assembly being substantially flat. A barrier sheet having a surface and a sealing structure are configured, the sealing structure configured to engage the barrier structure on the device substrate.

In another embodiment, provided is an encapsulation assembly for an electronic device having a substrate and an active region, the encapsulation assembly comprising:
Barrier sheet, and
Comprising a barrier structure extending from the surface of the sheet;
The barrier structure further includes a heating element, and the barrier structure is configured to substantially seal the electronic device when used on the electronic device.

  Further provided is an electronic device having such an encapsulation assembly.

In the best mode for carrying out the invention, the definitions and explanations of terms are first given, followed by the electronic device structure.
(1. Definition and explanation of terms)
Before addressing details of embodiments described below, some terms are defined or clarified. As used herein, the term “activation” refers to a signal specific to an electromagnetic light emitting electronic component such that when referring to the electromagnetic light emitting electronic component, the electromagnetic wave is emitted at a desired wavelength or wavelength spectrum. Is meant to be provided.

  The term “adhesive” is intended to mean a solid or liquid substance that can hold a material by attachment to a surface. Examples of adhesives include, but are not limited to, ethylene vinyl acetate, phenolic resins, (natural and synthetic) rubbers, carboxylic acid polymers, polyamides, polyimides, butadiene styrene copolymers, silicones, epoxies, urethanes, acrylics, Organic and inorganic materials such as isocyanate, polyvinyl acetate, polyvinyl alcohol, polybenzimidazole, cement, cyanoacrylate, and those using mixtures and combinations thereof are included.

  The term “ambient conditions” shall mean the conditions in which a person is present. For example, the ambient conditions of a clean room in a microelectronic factory are: a temperature of about 20 ° C., a relative humidity of about 40%, an illuminance using fluorescence (with or without a yellow filter), no sunlight (from outside), And laminar airflow can be included.

  The term “barrier material” substantially prevents the passage of important contaminants (eg air, oxygen, hydrogen, organic vapors, moisture) through it under conditions where the finished device may be exposed. It shall mean material. Examples of materials useful for making the barrier material include, but are not limited to, glass, ceramic, metal, metal oxide, metal nitride, and combinations thereof.

The term “barrier sheet” shall mean a sheet or layer of barrier material, which may have one or more sub-layers or impregnated material, spinning, extrusion, molding, hammering, casting Can be made using a number of well-known techniques, including pressing, rolling, calendering, and combinations thereof. In one embodiment, the barrier sheet ^has a ^{10 -2 g / m 2 / 24hr} / transmission of less than atm. The barrier sheet can be made from any material that has a low permeability to gas and moisture and is stable at the processing and operating temperatures to which the barrier sheet is exposed. Examples of materials that can be used for the barrier sheet include, but are not limited to, glass, ceramic, metal, metal oxide, metal nitride, and combinations thereof.

  The term “pollutant” refers to oxygen, air, water, organic vapors, or other gaseous materials that may be harmful to sensitive areas of electronic devices, such as electrically active areas of organic light-emitting displays. It shall be.

  The term “ceramic” shall mean an inorganic composition other than glass, which is formed, for example, porcelain or brick, and refractory to cure the inorganic composition during its manufacture or subsequent use. Heat treatment can be performed by firing, calcining, sintering, or fusing at least a part of the inorganic material that is the calcined clay composition.

  The term “encapsulation assembly” covers and seals one or more electronic components in the electrically active region on the substrate from ambient conditions, and at least a portion of the encapsulant for the electronic components It shall mean one or more structures that can be used to form. The encapsulation assembly cooperates with a substrate that includes one or more electronic components to substantially protect a portion of such electronic components from damage originating from an external source of the electronic device. In one embodiment, the lid can be used alone or in combination with one or more other objects to form an encapsulation assembly.

  The term “complement” is intended to mean either of two structures that make the other complete with one another. The two structures that complete each other are shaped in the same way, for example a triangular rib fits into a triangular groove.

  The term “electron active region” is intended to mean a region of a substrate that is occupied by one or more circuits, one or more electronic components, or a combination thereof, as viewed from above the plan view. For example, in an organic light emitting display, the electrically active region includes a device portion having at least one electrode and a light emitting material.

  The term “electronic device” is intended to mean a group of circuits, electronic components, or combinations thereof that collectively perform a function when properly connected and supplied with an appropriate potential. An electronic device can include or be part of a system. Examples of electronic devices include displays, sensor arrays, computer systems, avionics, automobiles, cell phones, and many other consumer and industrial electronic products.

  The term “engagement” means that the first structure is inserted, mated, mated, positioned, received, or any combination thereof relative to the second structure. It shall be.

  The term “engagement groove” is intended to mean a channel in a structure (eg, a housing) that engages, mates with, and receives other structures (eg, engagement ribs), or as appropriate This is due to the combination.

  The term “engagement rib” is intended to mean a raised ridge that extends from a workpiece (eg, a substrate) and is inserted into, engages with and mates with another structure (eg, an engagement groove). Placed in it, or it is accepted.

  The term “getter material” means a material used to absorb, adsorb, or chemically bind one or more undesirable materials, such as water, oxygen, hydrogen, organic vapors, and mixtures thereof. It shall be. The getter material can be a solid, a paste, a liquid, or a vapor. One type of gettering material or a mixture or combination of two or more materials can be used. Examples include a number of materials, such as inorganic molecular sieves such as zeolite.

  The term “glass” is intended to mean an inorganic composition that is predominantly silicon dioxide and may include one or more dopants to change its properties. For example, phosphorus-doped glass can be used to slow or substantially stop migration of mobile ions through it, using boron-doped glass. The flow temperature of such materials can be reduced compared to undoped glass.

  The term “heating element” is intended to mean a structure that generates heat when current flows through the structure or when the structure is exposed to electromagnetic waves, such as electromagnetic radiation.

  The term “hermetic seal” is intended to mean a structure (or combination of structures) that substantially prevents the passage of air, moisture, and other contaminants therethrough at ambient conditions.

  The term “fixing structure” is intended to mean at least one complementary structure that can be used to align two parts, eg, an encapsulation assembly and a housing. One fuser structure can engage the other fuser structure to properly align the two parts.

  The term “lid” alone or in combination with one or more other objects covers and seals one or more electronic components in the electrically active region of the substrate from ambient conditions. And a structure that can be used to form at least a portion of a seal of the electronic component.

  The term “metal” is meant to include one or more metals. For example, the metal coating can include elemental metals alone, clads, alloys, or multiple layers of any combination of elemental metals, clads, or alloys, or the appropriate combinations described above.

  The term “periphery” shall mean a curved portion that is closed on the border with the central region of the barrier sheet. The perimeter is not limited to any particular geometric shape.

The term “organic electronic device” is intended to mean a device comprising one or more semiconductor layers or materials. Organic electronic devices include the following:
(1) A device that converts electrical energy into electromagnetic waves (for example, light emitting diodes, light emitting diode displays, diode lasers, or lighting panels)
(2) a device that detects a signal through an electronic process (eg, a photoelectric detector, photoconductive cell, photoresistor, optical switch, phototransistor, phototube, infrared (“IR”) detector, or biosensor),
(3) devices that convert electromagnetic waves into electrical energy (eg, photovoltaic devices or solar cells), and
(4) A device (eg, transistor or diode) that includes one or more electronic components that include one or more organic semiconductor layers.

  The term “organic active layer” shall mean one or more organic layers, in which at least one part of the organic layer can form a rectifying junction when alone or in contact with dissimilar materials It is.

  The term “rectifying junction” is intended to mean a junction in a semiconductor layer or a junction formed by an interface between a semiconductor layer and a dissimilar material, where one type of charge carrier is It flows more easily through the joint in one direction compared to the opposite direction. A pn junction is an example of a rectifying junction, which can be used as a diode.

  The term “sealing structure” is intended to mean a structure that is complementary to a barrier structure, but need not be its complement beyond a substantial portion of the barrier structure. In each embodiment, a small slope or indentation is sufficient to construct the complement for the rounded tip portion of the barrier structure formed into a semicircle.

  The term “structure” shall mean one or more patterned layers or components that serve their intended role, alone or in combination with other patterned layers or components. It forms the device.

  The term “substrate” is intended to mean a workpiece that can be either rigid or flexible, and may include one or more layers of one or more materials, including: Nonlimiting examples include glass, polymer, metal, or ceramic materials, or combinations thereof.

  The term “substantially continuous” shall mean that the structure stretches without breaking to form a closed geometric component (eg, triangle, rectangle, circle, loop, irregular shape, etc.). .

  The term “transparent” shall mean the ability to transmit at least 70 percent of an electromagnetic wave at a wavelength or wavelength spectrum, eg, visible light.

  As used herein, the terms “comprises”, “includes”, “has having”, or any other variation thereof are non- It shall cover exclusive inclusion. For example, a method, process, article, or device comprising the listed components is not necessarily limited to those components, but is explicitly listed for such methods, processes, articles, or devices. Other components that are not or are unique may also be included. Further, unless expressly stated to the contrary, “or” refers to non-exclusive “or” and not exclusive OR. For example, “condition A or B” is satisfied by any one of the following: A is true (or present) and B is false (or does not exist), and A is false ( Or absent) and B is true (or present), and both A and B are true (or present).

  Also, the use of “a” or “an” is used to describe the components and components of the present invention. This is done merely for convenience and to give a general sense of the invention. This description should be read to include one or at least one and the singular also includes the plural unless it is obvious that it is meant otherwise.

  Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention, suitable methods and materials are described below. All publications, patent applications, patents, and other cited references mentioned herein are incorporated by reference in their entirety. In case of conflict, the present specification, including definitions, will control. In addition, the materials, methods, and examples are illustrative only and not intended to be limiting.

(2. Electronic device structure)
Electronic devices that can benefit from the use of the present invention include, but are not limited to, light emitting diodes, organic displays, photovoltaic devices, field emission displays, electrochemical displays, plasma displays, microelectromechanical systems, optical devices, and Other electronic devices that use integrated circuits include, but are not limited to, accelerometers, gyroscopes, motion sensors. Thus, the size of the encapsulation assembly can be very small and will vary based on the type of electronic device in which the encapsulation assembly is used.

  With reference to FIGS. 1-3, one embodiment of an electronic device is illustrated and generally indicated at 500. In certain embodiments, the electronic device is an organic electronic device, but the electronic device can be any electronic device that includes an interior region that requires sealing. As shown in FIGS. 1 to 3, the electronic device 500 includes a substrate 502. An electrically active region 504 is built on the substrate 502. In addition, the electronic device 500 includes an encapsulation assembly 506. As shown in FIGS. 2 and 3, the encapsulation assembly 506 includes a surface 508 and a barrier structure 510 extending from the surface 508 (of the barrier sheet). In certain embodiments, the barrier structure 510 (manufactured from a barrier material) is a glass bead that is placed on or otherwise formed on the surface of the encapsulation assembly 506. The barrier structure 510 has a thickness that is a certain dimension at which the barrier structure extends from the barrier sheet to its extremity tip. This thickness can be a constant thickness or can vary depending on the type of barrier sheet, the manner in which the barrier sheet and barrier structure are manufactured, and the type of device substrate to which the encapsulation assembly is finally attached. . For example, the barrier structure 510 can be created by first depositing a physical material (eg, paste or fluid) of a barrier material and then further processing this material to create the barrier structure. Alternatively, it can be made, for example, by other techniques in which the barrier structure is made separately from the barrier sheet, or by other techniques in which the barrier sheet 508 and the barrier structure 510 are manufactured together. .

  Also in FIGS. 2 and 3, the encapsulation assembly 506 can form an interior region 512 in the barrier sheet 508, on which, for example, the interior region 512 (which can be made to have a concave cavity). One or more layers 514 can be placed on the top of the roof or on the sides of the interior region 512. This region is shown as part of the molded barrier sheet, but if the element 510 is as thick as necessary to be higher than the electrically active region to be encapsulated, this inner region will be the barrier structure. It can be created by using the body element 510 itself. Layer 514 includes a getter material.

  In another particular embodiment illustrated in FIGS. 4 and 5, the encapsulation assembly 506 can be affixed to the substrate 502 using an adhesive 516 (which can be deposited in more than one location, Alternative embodiments illustrate different uses of the adhesive, as shown at 520).

  In certain embodiments, when the encapsulation assembly 506 is affixed to the substrate 502 using the adhesive 516, the barrier structure 510 and the adhesive 516 are coupled to the encapsulation assembly 506 and the substrate 502, as depicted in FIG. In between, the barrier 518 is constructed to minimize the gap between them. When the device is encapsulated, the barrier structure does not fuse to the surfaces of both the barrier sheet and the device substrate at the same time. Further, in certain embodiments, the barrier structure 510 is no more than 1 micron from the substrate 502. Accordingly, the permeation path through the adhesive 516 is substantially narrowed, and water permeation through the adhesive 516 is substantially reduced.

  Referring now to FIGS. 6 and 7, an alternative embodiment of an electronic device is shown, generally designated 1000. As illustrated in FIG. 6, the electronic device 1000 includes a substrate 1002. In addition, an electrically active region 1004 is built on the substrate 1002. Further, the electronic device 1000 includes an encapsulation assembly 1006. As shown in FIGS. 6 and 7, the encapsulation assembly 1006 includes a surface 1008 and a barrier structure 1010 that is affixed to the surface 1008. In certain embodiments, the barrier structure 1010 is a glass bead that is placed on or otherwise formed on the surface of the encapsulation assembly 1006. 6 and 7 further illustrate a heating element 1012 that is incorporated into the barrier structure 1010. In certain embodiments, the heating element 1012 can be selectively heated. In one particular embodiment, the heating element 1012 can be manufactured from silicon nitride and a compound having a refractory metal such as titanium, tungsten, and tantalum, and the heating element 1012 generates heat when subjected to electromagnetic radiation. Can do. In another particular embodiment, the heating element can be an electrical resistance wire that generates heat when a current is applied to it. In certain embodiments, a power source 1014 is included that may selectively expose the heating element 1012 to electromagnetic radiation or current. Heating can be performed before assembly of the encapsulation assembly and the electronic device, or in some embodiments, after assembly.

  During assembly, the barrier structure 1010 can be positioned between the substrate 1002 and the encapsulation assembly 1006 such that the barrier structure is juxtaposed with the substrate 1002 and the encapsulation assembly 1006. Furthermore, electromagnetic radiation or current can be applied to the heating element 1012 to heat the heating element 1012 during assembly. When the temperature of the heating element 1012 reaches the melting point of the barrier structure 1010, the barrier structure 1010 melts and fuses with either the substrate 1002 and / or the encapsulation assembly 1006. In this manner, the barrier structure 1010 can form a hermetic seal between the substrate 1002 and the encapsulation assembly 1006. In certain embodiments, applying heat locally to the barrier structure 1010 can substantially prevent the electroactive layer 1004 from being damaged by heat or electromagnetic radiation. If not, it would be required to melt the barrier structure 1010 with heat or electromagnetic radiation and fuse it to the substrate 1002 and the encapsulation assembly 1006 described herein.

  6 and 7, an encapsulation assembly 1006 can be formed with an interior region 1016, with one or more layers 1018 in the interior region, for example, on the top of the interior region 1016 or on the sides of the interior region 1016. It is exemplified that it can be placed. In certain embodiments, layer 1018 includes a getter material, such as one or more getter materials described herein. Although not illustrated in FIGS. 6-7, it is further envisioned that the barrier structure 1010 may be placed on a device substrate, optionally with a gettering material, otherwise the gettering material is used in the manner shown in the figures. Is done.

  With reference to FIG. 8, an alternative embodiment of an electronic device is shown, indicated at 1200. FIG. 8 shows an electronic device 1200 that includes a substrate 1202. In addition, an electrically active region 1204 is built on the substrate 1202. In addition, electronic device 1200 includes an encapsulation assembly 1206. As shown in FIG. 8, the encapsulation assembly 1206 includes a surface 1208 to which a barrier structure 1210 can be affixed. In certain embodiments, the barrier structure 1210 is a glass bead that can be disposed between the surface 1208 of the encapsulation assembly 1200 and the substrate 1202. FIG. 8 further illustrates that the heating element 1212 can be incorporated into the surface 1208 of the encapsulation assembly 1204.

  In certain embodiments, when the barrier structure 1210 is positioned between the encapsulation assembly 1204 and the substrate 1202 such that the barrier structure is juxtaposed with the encapsulation assembly 1204 and the substrate 1202, the heating element 1212 may be Contact 1210. Further, when the heating element 1212 is heated, the barrier structure 1210 can melt and fuse with the encapsulation assembly 1206 and the substrate to build a hermetic seal around the electrically active region 1204. Local heat generation associated with the heating element 1212 substantially reduces damage to the electrically active region 1204 caused by excessive heat.

  With reference to FIG. 9, an alternative embodiment of an electronic device is shown, indicated at 1300. FIG. 9 shows an electronic device 1300 that includes a substrate 1302. In addition, an electrically active region 1304 is built on the substrate 1302. Further, the electronic device 1300 includes an encapsulation assembly 1306. As shown in FIG. 9, the encapsulation assembly 1306 includes a surface 1308 to which a barrier structure 1310 can be affixed. In certain embodiments, the barrier structure 1310 is a glass bead that can be disposed between the surface 1308 of the encapsulation assembly 1300 and the substrate 1302. FIG. 9 further illustrates that the heating element 1312 can be incorporated into the substrate 1302 around the electrically active region 1304.

  In certain embodiments, when the barrier structure 1310 is disposed between the encapsulation assembly 1304 and the substrate 1302 such that the barrier structure is juxtaposed with the encapsulation assembly 1304 and the substrate 1302, the heating element 1312 is not the barrier structure 1310. Contact with. Further, when the heating element 1312 is heated, the barrier structure 1310 can be melted and fused with the encapsulation assembly 1306 and the substrate to establish a hermetic seal around the electrically active region 1304.

  Referring now to FIGS. 10 and 11, an embodiment of an electronic device is illustrated and generally designated 1400. As shown in FIGS. 10 and 11, the electronic device 1400 includes a substrate 1402. An electrically active region 1404 is built on the substrate 1402. Further, electronic device 1400 includes an encapsulation assembly 1406. As shown in FIGS. 10 and 11, the encapsulation assembly 1406 includes a surface 1408 and a barrier structure 1410 extending from the surface 1408. In certain embodiments, the barrier structure 1410 is a glass bead that is integrally formed with the encapsulation assembly 1406. In this example, the barrier structure 1410 can be manufactured from the same or different material as that used for the barrier sheet, and can be made using molding techniques, with any desired desired barrier structure profile and can do. In illustration 10, the thickness of the barrier structure 1410 varies across its width. In certain embodiments, the encapsulation assembly 1406 can be affixed to the substrate 1402 using an adhesive 1412. In certain embodiments, when the encapsulation assembly 1406 is affixed to the substrate 1402 using the adhesive 1412, the adhesive 1416 and the barrier structure 1410 are coupled to the encapsulation assembly 1406 and the substrate 1402 as depicted in FIG. In between, a sealing barrier 1418 is constructed.

  FIG. 12 illustrates another embodiment of an electronic device indicated generally at 1600. As shown in FIG. 12, the electronic device 1600 includes a substrate 1602. An electrically active region 1604 is built on the substrate 1602. Further, electronic device 1600 includes an encapsulation assembly 1606. As shown in FIG. 12, the encapsulation assembly 1606 includes a surface 1608 and a first anchoring barrier structure 1610 extending from the surface 1608. In certain embodiments, the first anchoring barrier structure 1610 is a substantially continuous engagement rib that extends from the surface 1608 of the encapsulation assembly 1606. Further, the substantially continuous engagement rib is integrally formed with the encapsulation assembly 1606 and has a substantially semicircular cross section. FIG. 12 further illustrates that the substrate 1608 includes a second fuser barrier structure 1612 that is a complement of the first fuser barrier structure 1610. In particular, the second fuser structure 1612 is a substantially continuous engagement groove that is sized and shaped correspondingly to receive the first fuser barrier structure 1610. In certain embodiments, the first fuser barrier structure 1610 mates with the second fuser structure 1612 when the electronic device 1600 is assembled. Further, in certain embodiments, the encapsulation assembly 1606 can be affixed to the substrate 1602 by heating the fusing structure 1610, 1612, or the area around it, to fuse the fusing structure. In another specific embodiment, the first fuser barrier structure 1610 can be affixed to the second fuser structure 1612 using an adhesive.

  FIG. 13 shows yet another embodiment of the electronic device shown at 1700. In this particular embodiment, electronic device 1700 includes a substrate 1702 and an electrically active region 1704 is constructed on substrate 1702. Further, the substrate includes a substantially continuous engagement rib 1706 that is integrally formed with the substrate 1702. As illustrated in FIG. 13, the electronic device 1700 includes an encapsulation assembly 1708. FIG. 13 shows that the encapsulation assembly 1708 includes a surface 1710 in which a substantially continuous engagement groove 1712 is formed. In certain embodiments, both the engagement rib 1706 and the engagement groove 1712 have a semicircular cross section.

  FIG. 14 illustrates another embodiment of an electronic device 1800 that has substantially continuous engagement ribs 1802 extending from the encapsulation assembly 1804 and formed with a substantially continuous engagement groove in the substrate 1808. 1806 can be fitted. As shown in FIG. 14, the engagement rib 1802 and the engagement groove 1806 have a rectangular cross section.

  With reference to FIG. 15, yet another embodiment of an electronic device 1900 is illustrated, which includes a substantially continuous engagement rib 1902 that includes a substantially continuous engagement rib 1902 extending from a substrate 1904 and formed in an encapsulation assembly 1908. It can be fitted into the groove 1906. As shown in FIG. 15, the engagement rib 1902 and the engagement groove 1906 have a rectangular cross section.

  FIG. 16 illustrates another embodiment of the electronic device 2000 that has substantially continuous engagement ribs 2002 extending from the encapsulation assembly 2004 and formed on the substrate 2008. It can be fitted into the groove 2006. As shown in FIG. 16, the engagement rib 2002 and the engagement groove 2006 have a triangular cross section.

  With reference to FIG. 17, yet another embodiment of an electronic device 2100 is illustrated, which includes a substantially continuous engagement rib 2102 extending from a substrate 2104 and substantially formed in an encapsulation assembly 2108. It can be fitted into a continuous engagement groove 2106. As shown in FIG. 17, the engagement rib 2102 and the engagement groove 2106 have a triangular cross section.

  FIG. 18 illustrates yet another embodiment of an electronic device 2200 that has a substantially continuous engagement rib 2202 that extends from the encapsulation assembly 2204 and is substantially continuous formed in the substrate 2208. It is possible to fit into the appropriate engaging groove 2206. As shown in FIG. 18, the engagement rib 2202 and the engagement groove 2206 have a frustoconical cross section.

  Referring to FIG. 19, another embodiment of an electronic device 2300 is illustrated that includes a substantially continuous engagement rib 2302 that extends from a substrate 2304 and is substantially continuous formed in an encapsulation assembly 2308. It can be fitted into the engaging groove 2306. As shown in FIG. 19, the engagement rib 2302 and the engagement groove 2306 have a frustoconical cross section.

  20 and 21 illustrate yet another embodiment of the electronic device 2400, which has a first substantially continuous engagement rib 2402 extending from the encapsulation assembly 2404, As shown, the second substantially continuous engagement rib 2406 extending from the substrate 2408 can be surrounded when the encapsulation assembly 2404 engages the substrate 2408. As shown in FIG. 21, the engagement ribs 2402 and 2406 are formed in a complementary shape and have a triangular cross section.

  Referring to FIG. 22, another embodiment of an electronic device 2600 is illustrated, which includes a substantially continuous engagement rib 2602 that extends from an encapsulation assembly 2604, and is substantially continuous formed on a substrate 2608. It can be substantially located within the engagement rib 2606 or can be substantially surrounded thereby. As shown in FIG. 22, the engagement ribs 2402, 2406 are formed in a complementary shape and have a triangular cross section.

  FIG. 23 illustrates yet another embodiment of an electronic device 2700 that has a first substantially continuous engagement rib 2702 extending from an encapsulation assembly 2704, wherein the encapsulation assembly 2704 is a substrate 2708. Substantially encircles a second substantially continuous engagement rib 2706 extending from the substrate 2708 when engaged. As shown in FIG. 23, the engaging ribs 2702 and 2706 are formed in a complementary shape and have a square cross section.

  With reference to FIG. 24, another embodiment of an electronic device 2800 is illustrated, which includes a substantially continuous engagement rib 2802 extending from an encapsulation assembly 2804, which is substantially continuous formed on a substrate 2808. It can be substantially located within the engagement rib 2806 or can be substantially surrounded thereby. As shown in FIG. 24, the engagement ribs 2802, 2806 are formed in a complementary shape and have a square cross section.

  FIG. 25 illustrates yet another embodiment of an electronic device 2900 that has a first substantially continuous engagement rib 2902 extending from an encapsulation assembly 2904, wherein the encapsulation assembly 2904 is a substrate 2908. When engaged with, a second substantially continuous engagement rib 2906 extending from the substrate 2908 can be surrounded. As shown in FIG. 25, the engagement ribs 2902 and 2906 are formed in a complementary shape and have a frustoconical cross section.

  Referring to FIG. 26, yet another embodiment of the electronic device 3000 is illustrated, which includes a substantially continuous engagement rib 3002 extending from the encapsulation assembly 3004 and substantially formed on the substrate 3008. It can be located substantially within the continuous engagement rib 3006 or can be substantially surrounded thereby. As shown in FIG. 26, the engagement ribs 3002 and 3006 are formed in a complementary shape.

  Referring now to FIG. 27, the encapsulation assembly shown at 3100 is illustrated in plan view. As shown in FIG. 27, the encapsulation assembly 3100 includes an interior region 3102 surrounded by a first barrier structure 3104 that extends from the surface of the encapsulation assembly 3100. The second barrier structure 3106 extends from the surface of the encapsulation assembly 3100 around the first barrier structure 3104. In certain embodiments, each barrier structure 3104, 3106 is an engagement rib, an engagement groove, or a combination thereof. Further, in certain embodiments, each barrier structure 3104, 3106 can have a semi-circular, rectangular, triangular, frustoconical, or square cross section. As shown in FIG. 27, a first layer 3108 of getter material can be placed on the surface of the encapsulation assembly 3102 in the interior region 3102. Further, a second layer 3110 of getter material can be placed on the surface of the encapsulation assembly 3100 between the inner region 3102 and the first barrier structure 3104. A third layer 3112 of getter material can be placed on the surface of the encapsulation assembly 3100 between the first barrier structure 3104 and the second barrier structure 3106. Further, a fourth layer 3114 of getter material can be placed on the surface of the encapsulation assembly 3100 around the second barrier structure 3106.

  In certain embodiments, any of the structures 3104, 3106 may be omitted from the structure of the encapsulation assembly 3100. Further, any suitable combination of getter material layers 3108, 3110, 3112, 3114 may be omitted from the structure of the encapsulation assembly 3100.

  FIG. 28 illustrates another embodiment of an encapsulation assembly, shown at 4100 and illustrated in cross-section. The inner region 4102 is created by the barrier structure 4104 and is configured to be outside the device active region 4120. Inner region 4102 includes getter material 4108. The adhesive that joins the encapsulation assembly to the device 4122 is not shown.

  From these figures, it can be seen that the barrier structure can be placed on the barrier sheet so that it is outside the electrically active region when the device is encapsulated, and at the peripheral edge of the barrier sheet, at the edge. It can be seen that it can be directly adjacent or slightly inward from the edge. No spacer is required to raise the encapsulation assembly away from the device substrate. However, if necessary, such a spacer may be used.

  In each of the embodiments described herein, an encapsulant constructed between an encapsulation assembly and a device substrate produces a sealant as compared to an encapsulation technique that uses an adhesive as the primary sealant. Contaminant permeation through the encapsulant is substantially reduced while improving the selection above, where the barrier structure fuses or sinters to both the barrier surface and the device substrate.

  In embodiments that use a heating element (see, eg, element 1012 of FIG. 7), the barrier structure with glass particulates is desired to fuse to either the barrier sheet or the barrier sheet and device substrate. The glass-containing material can be heated as it is.

  In some embodiments, the barrier structure is configured to allow contact with the device substrate, and in other embodiments, the barrier structure is configured to prevent contracting, and further In this embodiment, the barrier structure is configured to be 1 micron or less from the device substrate when encapsulation is complete. In these embodiments, the permeation of contaminants has been found to be acceptable for many applications, mainly factors other than the rate of permeation of contaminants through the adhesive, with a few examples. For example, the adhesive can be selected on the basis of factors such as adhesive quality related to adhesive strength, UV durability, environmental issues, price, and ease of application. In some embodiments, for example, the assembly shown in FIG. 28 is used to encapsulate a pixelated monochromatic organic light emitting diode (using a glass barrier structure, an epoxy resin adhesive, and a zeolite getter material). It turned out that. Results from environmental tests (60 ° C./85% relative humidity and 85 ° C. and 85% relative humidity) showed unexpected results. After 1000 hours of exposure under the first set of conditions, no measurable pixel contraction was seen, and when tested under the second test, less than 5% after 1000 hours of exposure to the test conditions. Pixel contraction was measured.

In one embodiment, the barrier structure ^is fabricated from a barrier material having a ^{10 -2 g / m 2 / 24hr} / transmission of less than atm. In another embodiment, the barrier structure ^has a ^{10 -2 g / m 2 / 24hr} / transmission of less than atm. In one embodiment, the barrier structure has a room temperature for about ^{10 -6 g / m 2 / 24hr} / transmission of less than atm to gases and moisture. In one embodiment, the barrier material is inorganic.

  In one embodiment, the barrier structure is made from a material selected from glass, ceramic, metal, metal oxide, metal nitride, and combinations thereof. In one embodiment, the barrier material comprises an unsealed substrate having a barrier material coating. In one embodiment, the barrier structure is the same as the thickness of the device's electronically active display component (which could correspond to, for example, mechanism 504 of FIG. 3, 1004 of FIG. 7, or 1304 of FIG. 9). Has a thickness.

  In one embodiment, the barrier material is glass and is applied as a glass frit composition. As used herein, the term “glass frit composition” shall mean a composition comprising glass powder dispersed in an organic medium. After the glass frit composition is applied to the barrier sheet, it is solidified and densified to form a glass structure. As used herein, the term “solidification” refers to, for example, preventing the composition from unacceptably spreading to undesired locations, or by preserving the surface containing the solidified frit composition. To prevent damage caused (for example by stacking), it is meant that the deposited frit composition is sufficiently dried to stabilize. The term “densification” includes, but is not limited to, liquid media, on the surface of a barrier sheet to which substantially all volatile materials are excluded and to which glass powder particulates are applied. In contrast, it means heating or reheating the composition so as to cause fusion and adhesion of the glass powder particulates. Densification is performed in an oxidizing or inert atmosphere such as air, nitrogen, or argon at a temperature and time sufficient to volatilize (burn out) the organic material in the combined layer and contain any glass in the layer. The material can be sintered and thus thick film layers can be densified. As the glass is densified, the transmittance of the glass decreases. In one embodiment, the glass is fully densified. In one embodiment, densification is determined by the transparency of the fired glass, with complete transparency indicating sufficient densification.

Glass frit compositions are well known and many commercial materials are available. In one embodiment, the glass powder, based on the weight% 1-50% of _SiO 2, 0 to 80% of _B 2 _O 3, 0 to 90% of _Bi 2 _O 3, 0 to 90% of PbO 0 to 90% of the _P 2 _O 5, 0 to 60% of the _Li 2 O, 0 to 30% of the _Al 2 _O 3, 0% of the _K 2 O, 0% of the _Na 2 O, and 0 Comprising ˜30% MO, wherein M is selected from Ba, Sr, Ca, Zn, Cu, Mg, and mixtures thereof. The glass may contain several other oxide components. For example, ZrO ₂ and GeO ₂ may be partially introduced into the glass structure.

  A high content of Pb, Bi, or P in the glass provides a very low softening point that allows the glass frit composition to be densified below 650 ° C. Because these components tend to provide good stability of the glass and high solid solubility for other glass components, these glasses do not crystallize upon densification.

  In search of better compatibility with a given substrate, other glass modifiers or additives can be added to modify the glass properties. For example, in a low softening temperature glass, the coefficient of thermal expansion (“TCE”) of the glass can be controlled by an appropriate content of other glass components.

Other examples of suitable glass _{powder, PbO, Al 2 O 3,} SiO 2, B 2 O 3, ZnO, Bi 2 O 3, Na 2 O, Li 2 O, P 2 O 5, NaF, and CdO , And at least one of MO, wherein O is oxygen and M is selected from Ba, Sr, PB, Ca, Zn, Cu, Mg, and mixtures thereof. Is done. For example, glass is 10 to 90 wt% PbO, 0 to 20 wt% of _Al 2 _O 3, 0 to 40 wt% of _SiO 2, 0-15 wt% _B 2 _O 3, 0-15 wt% ZnO, 0 to 85 wt% of _Bi 2 _O 3, _0~10 wt% of _Na 2 O, 0 to 5 wt% of _Li 2 O, 0 to 45 wt% of _P 2 _O 5, 0 to 20 wt% It can comprise NaF and 0-10% by weight CdO. Glass, 0-15 wt% of PbO, 0 to 5 wt% of _Al 2 _O 3, 0 to 20 wt% of _SiO 2, 0-15 wt% of _B 2 _O 3, 0 to 15 wt% of ZnO, 65-85 wt% of _Bi 2 _O 3, _0~10 wt% of _Na 2 O, 0 to 5 wt% of _Li 2 O, 0 to 29 wt% of _P 2 _O 5, _0~20 wt% of NaF, And 0-10 wt% CdO. The glass may be ground in a ball mill to provide fine particles set to the powder size (in one embodiment, the powder size is 2-6 microns).

  The glasses described herein are manufactured by conventional glass manufacturing techniques. For example, glass can be prepared as follows. When preparing 500-2000 gram quantities of glass frit, the ingredients are weighed and then mixed in the desired proportions and heated in the bottom charge furnace to form a melt in the platinum alloy crucible. The heating temperature depends on the material and can be performed up to the peak temperature (1100-1400 ° C.) for a time such that the melt is completely liquid and homogeneous. This glass melt is quenched by a counter rotating stainless steel roller to form a 10-20 mil thick glass platelet. The resulting glass platelet is then pulverized to form a powder whose 50% volume distribution is trimmed between 2-5 microns. Nonetheless, the particle size can be varied depending on the final application of the encapsulation assembly. The glass powder is then formulated into a thick film composition (or “paste”) with filler and organic medium. The glass powder is present in the glass frit composition in an amount of about 5 to about 76% by weight, based on the total composition comprising glass and organic medium. In one embodiment, the organic medium includes water. In one embodiment, the organic medium includes an ester alcohol.

  The organic medium in which the glass is dispersed includes an organic polymer binder dissolved in a volatile organic solvent, and, in some cases, a plasticizer, a release agent, a dispersant, a discharge agent, an antifoaming agent, and a wetting agent. Comprising other dissolved substances.

  The solid can be mixed with an organic medium by mechanical mixing to form a paste-like composition called a “paste” having the appropriate consistency and rheology for printing. A wide variety of liquids can be used as the organic medium, and water may be included in the organic medium. The organic medium must be such that the solid is dispersible with a sufficient degree of stability. The rheological properties of the media must be such that they give good application properties to the composition. Such properties include: solid dispersion with a sufficient degree of stability, good application of the composition, proper viscosity, thixotropy, proper wettability of the substrate and solids, good drying speed, good Firing characteristics and sufficient dry film strength to withstand rough handling. In one embodiment, the organic medium comprises a suitable polymer and one or more solvents.

  In certain embodiments, the polymer used in the organic medium is ethyl cellulose, ethyl hydroxyethyl cellulose, wood rosin, a mixture of ethyl cellulose and phenolic resin, polymethacrylate of lower alcohol, and monobutyl ether of ethylene glycol monoacetate, or Selected from the group consisting of mixtures.

  The most widely used solvents found in thick film compositions are terpenes such as ethyl acetate, alpha- or beta-terpineol, or these, and kerosene, dibutyl phthalate, butyl carbitol, butyl carbitol acetate, hexylene glycol And mixtures with other solvents such as high boiling alcohols and alcohol esters, including isobutyl alcohol and 2-ethylhexanyl. In addition, a volatile liquid can be included in the medium to promote rapid curing after application on the substrate. In one embodiment, the medium is selected from ethyl cellulose and β-terpineol. Various combinations of these and other solvents are formulated to obtain the desired viscosity and volatility requirements. Water can be used as well as part of the organic medium.

  The ratio of the organic medium in the thick film composition to the glass frit solids in the dispersion depends on the method of applying the paste and the type of organic medium used and can be varied. Usually the dispersion contains 50-80% by weight glass frit and 20-50% by weight medium in order to obtain a good application. Within these ranges, the minimum amount possible for a solid to reduce the amount of organics that must be removed by pyrolysis and to obtain a better particulate packing with reduced shrinkage upon firing. It is desirable to use a binder. The content of the organic medium is suitable for application by casting, screen printing or ink jet printing, molding, stencil printing, extrusion molding, or spray coating, brushing, syringe dispensing, doctor brazing, etc. The degree and rheology are selected to be provided.

  In the case of screen printing, the screen mesh size controls the thickness of the deposited material. In one embodiment, the screen used for screen printing has a mesh size of 25-600, in one embodiment the mesh size is 50-500, and in one embodiment the mesh size is 200-350. Yes, in another embodiment, the mesh size is 200-275, and in another embodiment, the mesh size is 275-350. For reference purposes, the mesh dimensions can have various wire dimensions, which can change the film formed during the printing process. Thinner deposits are obtained from smaller mesh dimensions, as is the case for thick screen wire dimensions.

  Regarding the screen mesh dimensions, the following table is provided for reference purposes. Two classifications of screen mesh size r are the US Sieve Series and Tyler Equivalent, which is often the Tyler Mesh size or the Tyler Standard Sieve Series (Tyler Equivalent Series). It is called Tyler Standard Sieve Series. The mesh opening dimensions for these scales are shown in the table below and provide an indication of particle size. The mesh number system is a measure of how many openings are in a screen per linear inch. US sieve dimensions differ from Tyler sieve dimensions in that they are an arbitrary number.

  The deposited glass frit composition is dried to remove volatile organic media and solidify. Solidification can be performed by appropriate conventional means. In one embodiment, the composition is heated in an oven at about 100-120 ° C. Nonetheless, the temperature can vary depending on the softening point of the glass used and the type of getter material used (if it is used). In addition, other techniques can be used to heat the glass frit without substantially heating the barrier sheet. The solidified material is then densified as desired. For example, densification can be performed by any conventional means, and can be performed as part of one heating cycle immediately after heat solidification, or there can be some cooling during heating. Alternatively, two or more separate heating cycles may be performed. In some embodiments, the glass frit composition is densified when heated at 400-650 ° C. in a standard thick film conveyor belt furnace or box furnace and the article fired by a programmed heating cycle. It is formed.

  When glass is used to make the barrier structure, the final thickness of the barrier structure formed from the glass frit composition varies depending on the deposition method, the glass and% solids content in the composition Can be.

  In one embodiment, the barrier material is glass fiber. If a glass fiber is placed on the barrier sheet and then heated to fuse and bond it to the barrier sheet, again a glass structure is formed. Any of the glass compositions described above can be used for glass fibers.

  In one embodiment, the barrier material is a metal. Almost all metals have the small permeability required for gas and moisture. Any suitable metal can be used as long as it is stable to the atmosphere and adheres to the barrier sheet. In one embodiment, the metal is selected from Groups 3-13 of the periodic table. The IUPAC numbering method is used throughout, in which the families of the periodic table are numbered 1-18 from left to right (CRC Handbook of Chemistry and Physics, 81st edition, 2000 ). In one embodiment, the metal is selected from Al, Zn, In, Sn, Cr, Ni, and combinations thereof.

  The metal can be applied by any conventional deposition technique. In one embodiment, the metal is applied by vapor deposition through a mask. In one embodiment, the metal is applied by sputtering.

  The barrier material can be applied as a single layer, or it can be applied as two or more layers to obtain the desired thickness and geometry. For example, the glass frit composition can be applied to multiple layers by successive screen printing steps. The compositions in the different layers may be the same or different.

  In one embodiment, the barrier structure is created by using a suitable barrier material that is applied in a continuous manner without interruption. Alternatively, another location of the barrier structure can be created on the barrier sheet surface to create another barrier structure, optionally with a barrier structure pattern as required. There can be a break in (ie, not a single continuous feature around the entire active area of the device).

  The perimeter appears as a line of material around the outer portion of the major surface of the barrier sheet, although it is three-dimensional, or simply placed around the perimeter of the active area of the device Good. It has no gaps or openings and defines a barrier sheet region that is sealed to the substrate of the electronic device. In one embodiment, the encapsulation assembly is configured such that the barrier structure is not in direct contact with the substrate of the device when the device is sealed.

In one embodiment, the barrier sheet comprises glass. Most of the glass has about ^{10 -10 g / m 2 / 24hr} / transmission of less than atm. In one embodiment, the glass is selected from borosilicate glass and soda lime glass. In one embodiment, the barrier sheet is substantially planar. In one embodiment, the barrier sheet has a molded interior and has a substantially planar outer edge. In one embodiment, the barrier sheet is rectangular. In one embodiment, the barrier sheet has a thickness in the range of 0.1 mm to 5.0 mm.

  In one embodiment, as shown in FIG. 1, the peripheral edge 2 has a rectangular shape such as a window frame around the outer edge of the barrier sheet 1. In one embodiment, the peripheral edge of the barrier material has a circular shape. In one embodiment, the peripheral edge of the barrier material has an irregular shape that is adapted to supplement a particular substrate of the electronic device.

  The barrier structure itself can have different geometries. The ends can be straight, tapered or curved. The top surface can be flat or beveled. In one embodiment, the top surface geometry of the barrier structure is designed to engage its complement to a corresponding portion of the substrate. For example, they can be joined in a groove configuration.

  The barrier structure is suitable width and thickness to provide protection from contaminants such as hydrogen and oxygen gas, and moisture, as well as devices or other applications on which the encapsulation assembly will be used. Can have requirements. In one embodiment, the barrier structure has a width in the range of 10-5000 microns and a thickness in the range of 5-500 microns. In one embodiment, the barrier structure is about 7 microns thick. In one embodiment, the barrier structure has a width in the range of 500-2000 microns and a thickness in the range of 50-100 microns. Thickness can be achieved by using more than one structure.

  In one embodiment, two or more sequentially deposited patterns of barrier structure material (eg, around the periphery of the active area of the device) are applied to form two or more structures on the barrier sheet. Is formed. The materials used to make this structure may be the same or different, and the shape and dimensions of the structure may be the same or different. In one embodiment, the structures from the barrier sheet are manufactured from the same material and have the same shape.

  For purposes of using the encapsulation assembly, at least one adhesive is applied to the barrier structure, barrier sheet, substrate of the electronic device, or any combination thereof. If the adhesive is applied only to the substrate of the electronic device, the adhesive must be deposited in such a way that the substrate and barrier sheet can be bonded together. In one embodiment, the adhesive is applied to the bottom and outer edges of the barrier structure. In another embodiment, the adhesive is applied to the substrate of the electronic device. The selection of the adhesive is made in consideration of whether the adhesive adheres the barrier structure to the device substrate, in other words, if the barrier structure is on the device substrate, the adhesive will cause the barrier structure to become the barrier structure. Must be joined to the sheet.

  The advantages of certain embodiments will be appreciated. That is, by using a properly designed barrier structure, it is possible to use a smaller amount of adhesive than would otherwise be required. In addition, it is possible to select one or more adhesives from a larger number of adhesive compositions because the area where the contaminant penetration rate of the adhesive is important is smaller.

  In one embodiment, when a glass barrier structure is used, the adhesive is a UV curable epoxy. Such materials are well known and are widely available commercially. Other adhesive materials can be used as long as they have sufficient adhesion and mechanical strength.

  Provided in one embodiment is an electronic device having a barrier sheet with a barrier structure encapsulation assembly adhered to a substrate of the electronic device by application of a suitable adhesive. Other properties of the substrate are governed primarily by the requirements of the electronic device. For example, in the case of an organic light emitting diode display device, the substrate is usually transparent so that the substrate transmits the generated light. The substrate can be made from a material that is rigid or flexible, including, for example, glass, ceramic, metal, polymeric films, and combinations thereof. In one embodiment, the substrate comprises glass. In one embodiment, the substrate is flexible. In one embodiment, the substrate comprises a polymer film.

  In one embodiment, to use an encapsulation assembly, the encapsulation assembly is placed on the substrate of the electronic device. This assembly step can be performed at normal ambient conditions, or controlled as desired or including a vacuum or inert atmosphere as required by the electronic device to which the conditions apply. Under the specified conditions.

  In one embodiment, the barrier sheet further has a getter material applied to it. In one embodiment, when device assembly is complete, getter material is deposited on the surface of the barrier sheet such that it is between the barrier structure and the active area of the device. Gettering material can be deposited as desired at optional additional locations.

  The getter material can be in the form of a frit, pellet, wafer, or film. In one embodiment, the getter material is applied to the barrier sheet as part of a thick film paste composition, as disclosed in co-pending U.S. Pat. Applied. In one embodiment, when the encapsulation assembly is used by the device, at least a portion of the getter material is deposited outside the device active area such that a cavity is created above the active area of the device.

  In embodiments where the getter material is deposited on the barrier sheet, the getter material can optionally be activated in a step separate from the manufacture of the encapsulation assembly itself and before the encapsulation assembly is applied to the device. In this way, since the getter material can be activated after the encapsulation assembly is used in the manufacture of the device, the encapsulation assembly can be stored for long periods of time under normal storage conditions. In such embodiments, once the getter material is activated, the encapsulation assembly can be maintained in a controlled environment in such a way that the performance capacity of the getter material is not prematurely consumed.

  In one embodiment, improved device lifetime was observed with the encapsulation assembly shown in FIG. 28 used to encapsulate the organic light emitting diode display.

  The following examples illustrate the use of glass as a structural material applied to a glass barrier sheet for use as an encapsulation assembly for an organic light emitting diode display.

(Examples 1-3)
A series of silicate glass compositions found to be suitable as barrier materials in the new process are shown in Table 1. All glasses were prepared by mixing the raw materials and then melting in a platinum crucible at 1100-1400 ° C. The resulting melt was stirred and quenched by pouring on the surface of a counter rotating stainless steel roller or into a water bath. The glass powder prepared for the present invention was adjusted to an average size of 2-5 microns by wet or dry milling using an alumina ball medium before being formulated as a paste. The wet slurry after pulverization was dried in a high-temperature air oven and deagglomerated by a sieving method.

(Examples 4 to 6)
Glass frit compositions consist of glass and Texanol® solvent (ester alcohol (2,2,4 (trimethyl 1,3 pentanediol monoisobutyrate)), Eastman Chemical Co., Ltd.). ) And commercially available) and an organic medium based on a mixture of ethylcellulose resins. Table 2 shows examples of compositions. Changes in solvent content can be used to adjust paste viscosity and film thickness for different deposition methods.

  The glass frit composition is printed on a glass sheet based on soda lime silicate using a 200 mesh screen, dried at 120 ° C. for solvent evaporation, and then 450-550 in a box furnace. The glass structure was formed on the glass sheet by firing at a peak temperature of ° C for 1 to 2 hours. Some samples were also treated for 1 hour at 550 ° C. using a conveyor furnace with a 3-6 hour heating / cooling profile. The printing / firing step was repeated to produce thicker structures as needed. The thickness of the fired single printed glass structures ranged from 10 microns to 25 microns depending on paste viscosity and screen mesh size.

  The printed glass frit composition was fired to a high density and showed good adhesion to the glass sheet. No cracks or blistering were observed on the surface of the fired structure. The thickness uniformity of the fired barrier structure was maintained within +/− 2 microns regardless of paste composition.

(Example 7)
In this example, a barium metal coating was used to simulate the moisture and air sensitivity of an electronic device.

  A 300 angstrom thick barium coating was deposited on a 0.7 mm thick glass substrate. This substrate was encapsulated using a glass frit barrier structure (width 1 mm, thickness 80 microns) made from glass # 1 in Table 1 and fired on a 0.7 mm thick glass sheet as a barrier sheet. Two sheets were joined using UV curable epoxy. Approximately the same specimen without a glass frit barrier structure was prepared. Visual observation shows that the sample produced with the glass barrier structure protected the barium film from water and oxygen in the air much better than the sample without the glass barrier structure. It was. Visual observation was quantified by measuring and plotting the electrical resistance of a 300 Angstrom barium film between adjacent electrodes as a function of the time the package was exposed to a 60 ° C./90% RH environment. Water that has permeated into the package through the epoxy encapsulant will chemically react with the barium coating, resulting in a different film resistance. As can be seen from the chart attached as FIG. This information illustrates that the use of getter material is optional.

It is a top view of an electronic device. It is sectional drawing of the electronic device which follows the lines 2-2 of FIG. FIG. 3 is another cross-sectional view of the electronic device shown in FIGS. 1 and 2. FIG. 4 is another cross-sectional view of the electronic device shown in FIGS. 1 to 3. FIG. 5 is a detailed cross-sectional view of the electronic device taken from circle 5 in FIG. 4. 2 is a cross-sectional view of a first alternative embodiment of an electronic device. FIG. FIG. 6 is another cross-sectional view of a first alternative embodiment of an electronic device. FIG. 6 is a cross-sectional view of a second alternative embodiment of an electronic device. FIG. 6 is a cross-sectional view of a third alternative embodiment of an electronic device. FIG. 6 is a cross-sectional view of a fourth alternative embodiment of an electronic device. FIG. 11 is another cross-sectional view of the fourth alternative embodiment of the electronic device shown in FIG. 10. FIG. 7 is a cross-sectional view of a fifth alternative embodiment of an electronic device. FIG. 11 is a cross-sectional view of a sixth alternative embodiment of an electronic device. FIG. 11 is a cross-sectional view of a seventh alternative embodiment of an electronic device. FIG. 11 is a cross-sectional view of an eighth alternative embodiment of an electronic device. FIG. 11 is a cross-sectional view of a ninth alternative embodiment of an electronic device. FIG. 14 is a cross-sectional view of a tenth alternative embodiment of an electronic device. FIG. 16 is a cross-sectional view of an eleventh alternative embodiment of an electronic device. FIG. 16 is a cross-sectional view of a twelfth alternative embodiment of an electronic device. FIG. 17 is a cross-sectional view of a thirteenth alternative embodiment of an electronic device. FIG. 21 is another cross-sectional view of the thirteenth alternative embodiment of the electronic device shown in FIG. 20. FIG. 16 is a cross-sectional view of a fourteenth alternative embodiment of an electronic device. FIG. 17 is a cross-sectional view of a fifteenth alternative embodiment of an electronic device. FIG. 17 is a cross-sectional view of a sixteenth alternative embodiment of an electronic device. FIG. 23 is a cross-sectional view of a seventeenth alternative embodiment of an electronic device. FIG. 26 is a cross-sectional view of an eighteenth alternative embodiment of an electronic device. FIG. 6 is a plan view of an encapsulation assembly. FIG. 23 is a cross-sectional view of a nineteenth alternative embodiment of an electronic device. 6 is a chart illustrating the rate at which barium film is consumed using various encapsulation techniques.

Claims (30)

An encapsulation assembly for an electronic device having a substrate and an active region, comprising:
Barrier sheet, and
A barrier structure extending from the sheet;
When the barrier structure is used on an electronic device when used in conjunction with an adhesive to bond the encapsulation assembly to the device substrate, the barrier structure substantially hermetically seals the electronic device. sealing), and the barrier structure does not fuse to the device substrate.   The encapsulation assembly of claim 1, wherein the barrier structure comprises a barrier material selected from the group consisting of glass, ceramic, metallic materials, or combinations thereof. The encapsulation assembly of claim 1, further comprising a getter material,
The getter material is deposited on the barrier sheet;
And when the device is joined to the encapsulation assembly, the getter material is configured to be outside the device active region and further exposed to the device active region. Encapsulation assembly. An encapsulation assembly for an electronic device comprising a substrate further having a sealing structure and an active region, comprising:
The encapsulation assembly comprises:
A barrier sheet having a substantially flat surface, and
Comprising a barrier structure extending from a flat surface;
When the barrier structure is used on an electronic device, the barrier structure is configured to substantially seal the electronic device, and the barrier structure engages the sealing structure on the device substrate. An encapsulating assembly characterized by comprising: The assembly of claim 4 further comprising a getter material comprising:
The getter material is deposited on the barrier sheet; when the device is bonded to the encapsulation assembly, the getter material is outside the device active area and is exposed to the device active area An assembly characterized in that it is configured to be The assembly according to claim 4, comprising:
An assembly wherein the barrier structure is configured to be in substantially direct contact with the sealing structure on the device substrate. An assembly according to claim 1 or 4, comprising
Further comprising an adhesive to the barrier structure;
The assembly is characterized in that the adhesive is deposited at a location where the assembly is bonded to the device and in an amount sufficient to bond the assembly to the device. An encapsulation assembly for an electronic device comprising a barrier sheet having a substantially flat surface and a sealing structure,
An encapsulation assembly, wherein the sealing structure is configured to engage a barrier structure on the substrate of the electronic device.   The assembly according to claim 1 or 4, wherein the barrier structure comprises a glass material. A sealing body for an electronic device,
The electronic device has a substrate;
The sealing body is
A barrier structure, and
A sealing body comprising a heating element in contact with the barrier structure.   The heating element is disposed on a surface of an encapsulation assembly juxtaposed with the barrier structure, and after heating the barrier structure with the heating element, the barrier structure melts to form the encapsulation assembly and the device The sealing body according to claim 10, wherein a hermetic seal is constructed at least partly between the substrate and the substrate.   The sealed body according to claim 11, wherein the barrier structure is fused to the encapsulation assembly and the device substrate after being heated by the heating element. An encapsulation assembly for an organic electronic device,
The encapsulation assembly comprises a barrier sheet and a first keying structure;
The barrier sheet is sized to cover the electrically active area of the organic electronic device, and the first fixing structure is attached to the second fixing structure of the substrate. Configured,
The second fixing structure is a complement of the first fixing structure; and
An encapsulation assembly for an organic electronic device, wherein the combination of the first and second fuser structures can form at least a portion of a hermetic seal.   14. The encapsulation assembly according to claim 13, wherein the encapsulation assembly is transparent.   15. The encapsulation assembly of claim 14, wherein the shape of the first anchoring structure is substantially semi-circular, triangular, rectangular, or frustoconical.   The encapsulation assembly of claim 15, wherein the first anchoring structure comprises a substantially continuous engagement rib. The encapsulation assembly of claim 16, further comprising a getter material,
The encapsulation assembly of claim 16, wherein the getter material is configured to be disposed along a surface and exposed to the electronically active region. An electronic device comprising a substrate, an encapsulation assembly overlying an electrically active region, and a barrier structure comprising a barrier material comprising:
The substrate includes an electrically active region of an organic electronic device;
The encapsulation assembly comprises a barrier surface facing the device substrate; and
An electronic device, wherein the barrier structure is attached to the barrier surface of the encapsulation assembly and the substrate, and the barrier structure is no more than 1 micron away from a device substrate.   The organic electronic device of claim 18, further comprising an adhesive that contacts the barrier structure and the device substrate.   The organic electronic device of claim 19, wherein the barrier material comprises glass, ceramic, metal, or a combination thereof.   21. The organic electronic device of claim 20, wherein the encapsulation assembly further comprises a getter material exposed to the electronically active region. An encapsulation assembly for an electronic device having a substrate and having a barrier structure extending from outside the substrate and the active region,
The encapsulation assembly comprises:
Comprising a barrier sheet having a substantially flat surface and a sealing structure;
An encapsulation assembly, wherein the barrier sheet is configured to engage the barrier structure on the device substrate.   An electronic device comprising the encapsulation assembly of claim 22. A method for sealing an electronic device on a substrate, comprising:
Forming an encapsulation assembly comprising a barrier sheet and a barrier structure extending from the sheet;
Applying an adhesive to at least one of the barrier structure and the substrate;
Bonding the barrier structure to the substrate such that the electronic device is sealed by the encapsulation assembly;
Comprising a method.   25. The method of claim 24, wherein the barrier structure comprises a sealing material selected from glass, ceramic, metal, metal oxide, metal nitride, and combinations thereof.   26. The method of claim 25, wherein the barrier structure is formed from a glass frit composition.   27. The method of claim 26, further comprising solidifying and densifying the glass frit composition. The glass frit composition comprises PbO, Al ₂ O ₃ , SiO ₂ , B ₂ O ₃ , ZnO, Bi ₂ O ₃ , Na ₂ O, Li ₂ O, P ₂ O ₅ , NaF, and CdO, and MO. Comprising glass powder comprising at least one of them, wherein O is oxygen and M is selected from Ba, Sr, Pb, Ca, Zn, Cu, Mg, and mixtures thereof. 27. A method according to claim 26. An encapsulation assembly for an electronic device having a substrate and an active region,
Barrier sheet, and
A barrier structure extending from the surface of the sheet;
An encapsulation assembly, wherein the barrier structure further comprises a heating element, the barrier structure being configured to substantially seal the electronic device when used on the electronic device. 30. An encapsulation assembly according to claim 1, 13, or 29, comprising:
The electronic device is a light emitting diode, a light emitting diode display, a laser diode, a photodetector, a photoconductive cell, a photoresistor, an optical switch, a phototransistor, an electrochemical display, a photoelectric tube, an IR detector, a photovoltaic device, a solar cell, or a photosensor. , Transistor, field emission display, plasma display, microelectromechanical system, optical device, electronic device using integrated circuit, accelerometer, gyroscope, motion sensor, or diode .

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