TW200524461A - Encapsulation assembly for electronic devices - Google Patents

Encapsulation assembly for electronic devices Download PDF

Info

Publication number
TW200524461A
TW200524461A TW093134578A TW93134578A TW200524461A TW 200524461 A TW200524461 A TW 200524461A TW 093134578 A TW093134578 A TW 093134578A TW 93134578 A TW93134578 A TW 93134578A TW 200524461 A TW200524461 A TW 200524461A
Authority
TW
Taiwan
Prior art keywords
electronic device
barrier
substrate
package assembly
barrier structure
Prior art date
Application number
TW093134578A
Other languages
Chinese (zh)
Other versions
TWI365677B (en
Inventor
James Daniel Tremel
Matthew Dewey Hubert
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW200524461A publication Critical patent/TW200524461A/en
Application granted granted Critical
Publication of TWI365677B publication Critical patent/TWI365677B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032Packages or encapsulation
    • B81B7/0035Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • C03C27/10Joining glass to glass by processes other than fusing with the aid of adhesive specially adapted for that purpose
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C03C3/0745Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc containing more than 50% lead oxide, by weight
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10Frit compositions, i.e. in a powdered or comminuted form containing lead
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • C03C8/245Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders containing more than 50% lead oxide, by weight
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8721Metallic sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8722Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8723Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/874Passivation; Containers; Encapsulations including getter material or desiccant
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/8794Arrangements for heating and cooling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • B81C2203/0172Seals
    • B81C2203/019Seals characterised by the material or arrangement of seals between parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/163Connection portion, e.g. seal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/163Connection portion, e.g. seal
    • H01L2924/16315Shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)

Abstract

Describe are encapsulation assemblies useful for electronic device, having a substrate and an electrically active area, the encapsulation assembly comprising a barrier sheet; and a barrier structure that extends from the sheet, wherein the barrier structure is configured so as to substantially hermetically seal an electronic device when in use thereon. In some embodiments, the barrier structure is designed to be used with adhesives to bond the encapsulation assembly to the electronic device. Gettering materials may be optionally used.

Description

200524461 九、發明說明: 【發明所屬之技術領域】 本發明大體而言係關於一種用於電子裝置以防止該等電 子裝置曝露於污染物的封裝裝配。 【先前技術】 許多電子裝置都需要保護以免受濕氣,且在一些情況中 需要保護以免受氧、氫及/或有機蒸汽,從而防止各種類型 之降級。此等裝置包括基於聚合物或小分子構造之有機發 光一極體(’’OLED")裝置、基於石夕ic技術之微電子裝置、及 基於矽微機械加工之MEMS裝置。曝露於大氣可導致分別 由氧化物或氫氧化物形成(導致效能/亮度降低)、腐蝕或靜 摩擦所引起之陰極降級。雖然存在多種解決該問題之氣密 包裝及密封技術,但該等技術在效能壽命及可製造性方面 具有侷限,從而導致高成本。 【發明内容】 本發明提供一種用於一具有一基板及一活性區域之電子 裝置的封裝裝配,該封裝裝配包含: 一障壁片·,及 一自該片延伸之障壁結構,其中: #該卜壁結構係組態成使得當在一電子裝置上使用以與黏 2 M結合用於將該封裝裝配黏結至該裝置基板時大體上氣 么封該電子裝置;且其中該障壁結構未融合至該裝置基 反在一實施例中,將障壁結構組態成使得當將裝置黏結 至封裝裝配時避免與該電子裝置基板直接接觸。 97426.doc 200524461 本發明亦提供一種用於一具有一基板(其進一步具有一 密封結構)及一活性區域之電子裝置的封裝裝配,該封裝裝 配包含·· 一具有一大體上平坦之表面的障壁片;及 一自該平坦表面延伸之障壁結構,其中: 該障壁結構係組態成使得當在一電子裝置上使用時大體 上氣密封該電子裝置;且其中將障壁結構組態成使得其與 裝置基板上之密封結構嚙合。 在替代方法中,本發明提供一種用於一具有一基板之電 子裝置的封裝裝配,該基板進一步具有一自該基板延伸且 在一活性區域外面的障壁結構,該封裝裝配包含一具有一 大體上平坦之表面的障壁片及一密封結構;且其中將該密 封結構組態成使得其與裝置基板上之障壁結構嚙合。 在另一實施例中,本發明提供一種用於一具有一基板及 一活性區域之電子裝置的封裝裝配,該封裝裝配包含: 一障壁片;及 一自該片之表面延伸之障壁結構,該障壁結構進一步包 括一發熱元件,其中將該障壁結構組態成使得當在一電子 裝置上使用時大體上氣密封該電子裝置。 亦提供具有此等封裝裝配之電子裝置。 以上之概括描述及以下之詳細描述僅為例示性及說明 性’且並不具有對由隨附申請專利範圍所界定之本發明的 限制性。 【實施方式】 97426.doc 200524461 本毛明提供一種用於一具有一基板及一活性區域之電子 裝置的封裝裝配,該封裝裝配包含: 一障壁片;及 一自該片延伸之障壁結構,其中: 該障土、、、"構係組態成使得當在一電子裝置上使用以與黏 著n合用於將該封裝裝配黏結至該裝置基板時大體上氣 密封該電子裝置;且其中該障壁結構未融合至該裝置基 板。在一實施例中,將該障壁結構組態成使得當將裝置黏 結至封裝裝配時避免與該電子裝置基板直接接觸。 本發明亦提供一種用於一具有一基板(其進一步具有一 密封結構)及一活性區域之電子裝置的封裝裝配,該封裝裝 配包含: 一具有一大體上平坦之表面的障壁片;及 一自該平坦表面延伸之障壁結構,其中·· 該障壁結構係組態成使得當在一電子裝置上使用時大體 上氣密封該電子裝置;且其中將該障壁結構組態成使得其 與裝置基板上之密封結構喃合。 在替代方法中,本發明提供一種用於一具有一基板之電 子裝置的封裝裝配,該基板進一步具有一自該基板延伸且 在一活性區域外面的障壁結構,該封裝裝配包含一具有一 大體上平坦之表面的障壁片及一密封結構;且其中將該密 封結構組態成使得其與裝置基板上之障壁結構嚙合。 在另一實施例中,本發明提供一種用於一具有一基板及 一活性區域之電子裝置的封裝裝配,該封裝裝配包含: 97426.doc 200524461 一障壁片;及 一自該片之表面延伸之障壁結構,該障壁結構進一步包 括一發熱元件’其中該障壁結構係組態成使得當在一電子 裝置上使用時大體上氣密封該電子裝置。 本發明亦挺供具有此專封裝裝配之電子裝置。 詳細描述首先提出術語之定義及澄清,然後提出電子裝 置結構。 1·術語之定義及澄清 在提出以下所述之實施例的細節之前,定義或澄清一些 術語。當本文所用之術語"活化"涉及輻射發射電子組件 時,其欲意指提供適當訊號至該輻射發射電子組件以發射 所要波長或波長譜的輻射。 術語”黏著劑,,欲意指能夠藉由表面附著固持材料之固體 或液體物質。黏著劑之實例包括(但不限於)有機及無機材 料,諸如彼等使用以下物質之材料:乙烯乙酸乙稀酉旨、酚 醛樹脂、橡膠(天然及合成)、羧基聚合物、聚醯胺、聚醯亞 胺、苯乙烯·丁二烯共㈣、聚絲、環氧、胺基甲酸醋、 丙烯酸、異氰酸酯、聚乙酸乙烯酯、&乙烯醇、聚笨幷咪 唑、膠合劑、氰基丙烯酸酯及其混合物及組合。 術語,,周圍條件,,欲意指人類所在空間之條件。例如,微 電子工業中之潔淨室的周圍條件可包括:約2(rc之溫度, 約4〇/°之相對濕度,使用螢光燈照明(具有或不具有黃色渡 光器),無日照(來自戶外),及層流氣流。 “ 術…IV壁材料"欲意指在最終裝置將可能曝露之條件下 97426.doc 200524461 大體上防止相關污染物(例如,空氣、氧、氫、有機蒸汽、 濕氣)通過的材料。可用於製作障壁材料之材料的實例包括 (但不限於)··玻m金屬、金屬氧化物、金屬氮化物 及其組合。200524461 IX. Description of the invention: [Technical field to which the invention belongs] The present invention generally relates to a packaging assembly for an electronic device to prevent the electronic device from being exposed to pollutants. [Prior Art] Many electronic devices need to be protected from moisture, and in some cases, protected from oxygen, hydrogen, and / or organic vapors to prevent various types of degradation. These devices include organic light emitting diode (' OLED ") devices based on polymer or small molecule structures, microelectronic devices based on Shixi IC technology, and MEMS devices based on silicon micromachining. Exposure to the atmosphere can lead to cathodic degradation caused by oxide or hydroxide formation (resulting in reduced efficiency / brightness), corrosion, or static friction, respectively. Although there are various air-tight packaging and sealing technologies to solve this problem, these technologies have limitations in terms of performance life and manufacturability, resulting in high costs. [Summary of the Invention] The present invention provides a package assembly for an electronic device having a substrate and an active area. The package assembly includes: a barrier sheet, and a barrier structure extending from the sheet, where: # 此 卜The wall structure is configured such that the electronic device is substantially sealed when used on an electronic device in combination with an adhesive 2 M for bonding the package assembly to the device substrate; and wherein the barrier structure is not fused to the In one embodiment, the device is configured with a barrier structure so as to avoid direct contact with the substrate of the electronic device when the device is bonded to the package assembly. 97426.doc 200524461 The present invention also provides a package assembly for an electronic device having a substrate (which further has a sealing structure) and an active area, the package assembly including ... a barrier having a substantially flat surface Sheet; and a barrier structure extending from the flat surface, wherein: the barrier structure is configured such that the electronic device is substantially hermetically sealed when used on an electronic device; and wherein the barrier structure is configured such that it communicates with the electronic device The sealing structure on the device substrate is engaged. In an alternative method, the present invention provides a package assembly for an electronic device having a substrate, the substrate further having a barrier structure extending from the substrate and outside an active area, the package assembly comprising a The flat surface barrier sheet and a sealing structure; and wherein the sealing structure is configured so that it engages with the barrier structure on the device substrate. In another embodiment, the present invention provides a package assembly for an electronic device having a substrate and an active area, the package assembly comprising: a barrier sheet; and a barrier structure extending from a surface of the sheet, the The barrier structure further includes a heating element, wherein the barrier structure is configured such that the electronic device is substantially hermetically sealed when used on the electronic device. Electronic devices with such packages are also provided. The foregoing general description and the following detailed description are merely exemplary and explanatory 'and are not restrictive of the invention as defined by the scope of the accompanying patent application. [Embodiment] 97426.doc 200524461 The present invention provides a package assembly for an electronic device having a substrate and an active area. The package assembly includes: a barrier sheet; and a barrier structure extending from the sheet, wherein : The barrier structure is configured so that the electronic device is substantially hermetically sealed when used on an electronic device for bonding with the package assembly to the device substrate; and wherein the barrier The structure is not fused to the device substrate. In one embodiment, the barrier structure is configured so as to avoid direct contact with the electronic device substrate when the device is bonded to the package assembly. The present invention also provides a package assembly for an electronic device having a substrate (which further has a sealing structure) and an active area, the package assembly comprising: a barrier sheet having a substantially flat surface; and The flat surface extending barrier structure, wherein the barrier structure is configured so as to substantially hermetically seal the electronic device when used on an electronic device; and wherein the barrier structure is configured such that it is on the device substrate The sealing structure murmurs. In an alternative method, the present invention provides a package assembly for an electronic device having a substrate, the substrate further having a barrier structure extending from the substrate and outside an active area, the package assembly comprising a The flat surface barrier sheet and a sealing structure; and wherein the sealing structure is configured so that it engages with the barrier structure on the device substrate. In another embodiment, the present invention provides a package assembly for an electronic device having a substrate and an active area. The package assembly includes: 97426.doc 200524461 a barrier sheet; and a sheet extending from a surface of the sheet. A barrier structure, further comprising a heating element, wherein the barrier structure is configured to substantially hermetically seal the electronic device when used on an electronic device. The present invention also provides an electronic device with the special package assembly. The detailed description first proposes the definition and clarification of terms, and then proposes the electronic device structure. 1. Definition and clarification of terms Before defining details of the embodiments described below, some terms are defined or clarified. When the term " activation " as used herein relates to a radiation emitting electronic component, it is intended to provide an appropriate signal to the radiation emitting electronic component to emit radiation of a desired wavelength or wavelength spectrum. The term "adhesive" is intended to mean a solid or liquid substance capable of holding a material by surface attachment. Examples of adhesives include, but are not limited to, organic and inorganic materials such as those using the following materials: ethylene vinyl acetate Purpose, phenolic resin, rubber (natural and synthetic), carboxyl polymers, polyamide, polyimide, styrene butadiene copolymer, polyfilament, epoxy, urethane, acrylic, isocyanate, Polyvinyl acetate, & vinyl alcohol, polybenzimidazole, adhesives, cyanoacrylates, and mixtures and combinations thereof. The term, ambient conditions, is intended to mean conditions in the space in which humans are located. For example, in the microelectronics industry The ambient conditions of a clean room may include: a temperature of about 2 (rc, a relative humidity of about 40 / °), use of fluorescent lighting (with or without a yellow light fixture), no sunlight (from the outdoors), and floors "Artificial ... IV wall material" is intended to generally prevent related pollutants (such as air, oxygen, hydrogen, organic vaporization, etc.) under conditions where the final device will likely be exposed. Example, moisture) through a material may be used to make materials of barrier materials include (but are not limited to) · m glassy metals, metal oxides, metal nitrides, and combinations thereof.

術π P早壁片’’欲意指使用許多已知技術(包括旋壓、摘 壓、模製、錘擊、鑄造、壓製、滾屋、石牙光及其組合)所製 作的㈣材料之片或層(其可具有—或多個子層或浸潰材 料)。在-實施财,障壁片具有小於1()·2 g/m2/24 hr/at_ 渗透率。障蔽片可由任何具有低氣體及濕氣渗透率且在其 所曝露之處理及運作溫度下穩定的材料製成。可用於障壁 片之材料的實例包括(但不限於):玻璃、陶瓷、金屬、金屬 氧化物、金屬氮化物及其組合。 術語"污染物,•欲意指可對電子裝置之敏感區域(諸如一 有機發光顯示器之電活性區域)具破壞性之氧、空氣、水、 有機蒸汽或其它氣體材料。The term `` P early wall sheet '' is intended to refer to the use of many known techniques, including spinning, extraction, molding, hammering, casting, pressing, rolling house, stone tooth light, and combinations thereof. A sheet or layer (which may have—or multiple sublayers or impregnated materials). In the implementation, the barrier sheet has a permeability of less than 1 () · 2 g / m2 / 24 hr / at_. The barrier sheet can be made of any material that has low gas and moisture permeability and is stable at the processing and operating temperatures to which it is exposed. Examples of materials that can be used for the barrier sheet include, but are not limited to: glass, ceramics, metals, metal oxides, metal nitrides, and combinations thereof. The term " pollutant, " is intended to mean oxygen, air, water, organic vapor, or other gaseous materials that can be destructive to sensitive areas of an electronic device, such as the electroactive area of an organic light emitting display.

術語"陶瓷”欲意指不同於玻璃之無機組合物,其可在其 製造或隨後使用中藉由燒製、煅燒、燒結或融合至少一部 分該無機材料、及形成(例如)瓷器或磚塊之燒製黏土组合 物、及耐火材料來進行熱處理以硬化該無機組合物。 術浯封裝裝配”欲意指一或多個可用於覆蓋、封閉基板 上之電活性區域内的一或多個電子組件、且形成該或該等 多個電子組件之至少部分密封以使其與周圍條件隔離的結 構。結合包括一或多個電子組件的基板,封裝裝配大體上 防止此(此等)電子組件之一部分免受源自該電子裝置外部 97426.doc -10 - 200524461 之來源的損壞。在一實施例中,一頂蓋本身或其 夕 個其它物件的組合可形成__裝裝酉己。 一夕 術语互補物”欲意指相互使彼此完整之兩個結構中之 一:構。彼此互補之兩個結構形狀類似,例如三角形肋停 配合入三角形槽中。 保 術語"電子活性區域"欲意指自平面圖看由-或多個電 路、一或多個電子組件、或其組合佔據的基板區域。例如, 在有機發光顯示器巾,電活性區域包括具有至少 發光材料之裝置部分。 及 術語,,電子裝置”欲意指電路、電子組件、或其組合 合’當經適當地連接且供應適當電位時,其” 功能。一電子癸詈可白紅 么 研订一 裝置了匕括一糸統或可作為一系統之一 分。電子裝置之實例包括顯示器、感應器陣 : 航空電子設備、屿鱼、广包+ 回示、、死、 φ工太 備4㈣電話及許多其它消費型及工掌The term " ceramic " is intended to mean an inorganic composition other than glass that can be used in its manufacture or subsequent use by firing, calcining, sintering or fusing at least a portion of the inorganic material, and forming, for example, porcelain or bricks The fired clay composition, and the refractory material are heat-treated to harden the inorganic composition. The term "packaging assembly" is intended to mean one or more electrons that can be used to cover and seal an electrically active region on a substrate. A component and forms a structure that at least partially seals the one or more electronic components to isolate them from ambient conditions. In combination with a substrate that includes one or more electronic components, the package assembly generally protects a portion of this (these) electronic components from damage originating from sources outside the electronic device 97426.doc -10-200524461. In one embodiment, a cover itself or a combination of other objects may form a device. The term "complementary overnight" is intended to mean one of two structures that complete each other: structure. The two structures that are complementary to each other are similar in shape, such as a triangular rib that fits into a triangular groove. The term "electronic active region" " It is intended to refer to an area of a substrate occupied by one or more circuits, one or more electronic components, or a combination thereof from a plan view. For example, in an organic light emitting display towel, the electroactive area includes a device portion having at least a luminescent material. And the term, "electronic device" is intended to mean a circuit, an electronic component, or a combination of these "functions" when properly connected and supplied with an appropriate potential. An electronic device can be used to design a device. A system may be considered as a part of a system. Examples of electronic devices include displays, sensor arrays: avionics, island fish, wide-source + reply, dead, telephone, and many other consumer types and Foreman

電子產品。 M 術語,,唾合"欲意指第-結構相對於第二結構的插入 鎖、銜接(mesh)、安置、接收或其任何組合。 術語"哺合槽"欲意指在一結構(例如,外殼)中與另 (例二’哺合肋條)互鎖、銜接、接收或其任何組合之通道。 二二Μ肋條"欲意指自—工件(例如,基板)延伸且插入 例如’嚙合槽)、與該另-結構互鎖、銜接、置於 ,Ό構中、或由该另一結構接收之凸起隆脊。 術語"吸氣劑材料"欲意指用於吸收 或多種不良材料(諸如水、氧、t、有機蒸汽及其混二-) 97426.doc 200524461 之材料。吸氣劑材料可為固體、糊狀物、液體或蒸汽。可 使用一種類型之吸氣劑材料或兩種或兩種以上材料之混合 物或組合。實例包括許多材料,諸如無機分子篩,諸如沸 石。 術語”玻璃"欲意指主要為二氧化矽且可包含一或多種摻 雜;以改蝥其特性之無機組合物。例如,相較於未摻雜玻 璃,可使用經磷摻雜之玻璃來減緩或大體上停止流動離子 遷移通過;且相較於未摻雜玻璃,可使用經硼摻雜之玻璃 來降低此材料之流動溫度。 術扣發熱元件”欲意指一結構,當電流流過該結構或當 該、、ό構曝路於輕射(諸如電磁輻射)時其會產生熱量。 術語”氣密封,,欲意指在周圍條件下大體上防止空氣、濕 氣及其它污染物通過之結構(或多個結構之組合)。 術語”咬合結構”欲意指可用於對準兩個部分(例如,封骏 裝配及外殼)的互補結構中之至少_結構。_咬合結構可喝 合另一咬合結構以適當地對準兩個部分。 術語"頂蓋,,欲意指-結構,其本身或其與—或多個其~ 物件之組合可用於覆蓋、封閉一基板之電活性區域内的: 或多個電子組件、且形成該或該等多個電子組件之至少立 分密封以使其與周圍條件隔離。 夕 塗 屬 術語”金屬性"欲意指含有一或多種金屬。例如,金屬十 層可包括:元素金屬本身,包層,合金,複數層元素: 、包層或合金之任何組合,或前述任何組合。 、、 術語"周界,’欲意指約束障壁片之中心區域的閉合曲線。 97426.doc -12 - 200524461 周界不限於任何特定的幾何形狀。 語”有機電子裝置”欲意指包括-或多層半導體層或材 料的4置有機電子裝置包括:⑴將電能轉化為輻射的裝 糊如’發光二極體、發光二極體顯示器二極體雷射、: …、月面板),(2)藉由電子學方法偵測訊號的裝置(例如,光 偵:③&導電池、光敏電阻、光控開關、光電晶體、光 電&紅外(IR")價測器或生物感應器);(3)將輻射轉化為 電此之裝置(例如,光伏打裝置或太陽能電池);及(4)包括 、或夕個包子組件的裝置(例如,電晶體或二極體),其中該 或β等夕個電子組件包括—或多層有機半導體層。 術語”有機活性層,,欲意指一或多層有機層,其中該等有 機層中至夕一有機層本身或在與相異材料接觸時能夠形成 整流接面。 術語"整流接面,,欲意指半導體層内之接面或由半導體層 〃才、異材料之間的介面所形成之接面,其中一種類型之電 荷載流子沿一方向比沿相反方向更易流過該接面。ρη接面 係可用作二極體之整流接面的一實例。 術居进封結構”欲意指障壁結構的互補結構,但其不一 疋疋卩早壁結構之實質部分上方的互補物。對於每一實例而 σ小况〉貝或库鬥足以補足半圓形障壁結構之圓形末端部 分。 術浯’’結構”欲意指一或多個圖案化層或構件,其本身或 其與一(多)其它圖案化層或構件之組合形成用於所欲目的 之單元。 97426.doc 200524461 術語”基板”欲意指一工件,其可為剛性或可撓性,且可 包括一或多種材料之一或多個層,該或該等多種材料包括 (但不限於)玻璃、聚合物、金屬或陶瓷材料或其組合。 術語”大體上連續,,欲意指一結構無間斷地延伸且形成一 閉合幾何要素(例如,三角形、矩形、圓形、迴路、不規則 形狀等等)。術語”透明"欲意指在一波長或波長譜(例如,可 見光)下透射至少70%輻射的能力。 本文所用之術語”包含(comprises/comprising),,、”包括 (mcludes/including)’’、’’ 具有(has/having)” 或其任何其它變 體均欲覆盍非獨占性包括物。例如,包含一列要素之方法 製程、物品或設備不一定僅限於彼等要素,而亦可包括其 它未清楚列出或此方法、製程、物品或設備所固有的要素。 另外,除非清楚地說明為相反,否則,,或"係指包含性的或, 而非指獨佔性的L ’以下任—情形均滿足條件錢 B . A為真(或存在)且8為假(或不存在),a為假(或不存在) 且B為真(或存在),且入與]3均為真(或存在)。 μ m地,採用 -(a/an)"的使用來描述本發明之元件及 件。這樣做僅為了枝且給定本發明之—般意義。 ::::括一或至少一 ’且單數亦包括複數,除非明顯 思才曰其它。 隊非另外界定electronic product. M term, "salvation" is intended to mean the insertion lock, mesh, placement, reception, or any combination thereof of the first structure with respect to the second structure. The term " feed trough " is intended to mean a passageway that interlocks, engages, receives, or any combination thereof in one structure (e.g., a housing) with another (e.g., a 'feeding rib'). Two or two ribs " is intended to extend from a workpiece (e.g., a base plate) and be inserted into, e.g., an 'engagement slot,' interlock with the other structure, engage, place in a structure, or be received by the other structure Raised ridges. The term " getter material " is intended to mean a material used to absorb or a variety of undesirable materials (such as water, oxygen, t, organic vapors, and mixtures thereof) 97426.doc 200524461. The getter material can be a solid, a paste, a liquid, or a vapor. One type of getter material or a mixture or combination of two or more materials may be used. Examples include many materials such as inorganic molecular sieves such as zeolite. The term "glass" is intended to mean an inorganic composition that is primarily silicon dioxide and may contain one or more dopings to improve its properties. For example, rather than undoped glass, phosphorus-doped glass may be used To slow or substantially stop the migration of mobile ions; and compared to undoped glass, boron-doped glass can be used to reduce the flow temperature of this material. "Surge button heating element" is intended to mean a structure when current flows It will generate heat when passing through the structure or when the structure is exposed to light (such as electromagnetic radiation). The term "hermetically sealed" is intended to mean a structure (or a combination of multiple structures) that substantially prevents the passage of air, moisture, and other contaminants under ambient conditions. The term "occluded structure" is intended to be used to align two At least one of the complementary structures of a part (eg, Feng Jun assembly and housing). The occlusal structure can fit another occlusal structure to properly align the two parts. The term " top cover, which means-structure , Or its combination with—or more of its objects—can be used to cover or seal the electrically active area of a substrate: or multiple electronic components, and form at least a discrete seal of the multiple electronic components To isolate it from ambient conditions. The term "metallic" is intended to mean that it contains one or more metals. For example, the ten layers of metal may include: elemental metals themselves, cladding, alloys, plural layers of elements:, any combination of claddings or alloys, or any combination of the foregoing. The term " perimeter, ' intends to mean a closed curve that constrains the central area of the baffle. 97426.doc -12-200524461 The perimeter is not limited to any particular geometry. The term "organic electronic device" is intended to mean a four-unit organic electronic device including-or a plurality of semiconductor layers or materials, including: a paste that converts electrical energy into radiation, such as a 'light emitting diode, a light emitting diode display diode, (2) devices that detect signals by electronic methods (for example, light detection: ③ & lead batteries, photoresistors, light-controlled switches, photoelectric crystals, photoelectric & infrared (IR " Valence detectors or biosensors); (3) devices that convert radiation into electricity (for example, photovoltaic devices or solar cells); and (4) devices that include or include a bun assembly (for example, a transistor) Or a diode), wherein the or other electronic components include—or a plurality of organic semiconductor layers. The term "organic active layer" is intended to mean one or more organic layers, wherein one of the organic layers can form a rectifying junction itself or when in contact with a dissimilar material. The term " rectifying junction ,, It is intended that the interface in the semiconductor layer or the interface formed by the semiconductor layer and the interface between different materials. One type of charge carriers flows more easily through the interface in one direction than in the opposite direction. The ρη junction is an example of a rectifying junction that can be used as a diode. The "surgical entry seal structure" is intended to mean the complementary structure of the barrier structure, but it is not a complement to the substantial part of the early wall structure. For each instance, σ small case> shell or kudou is enough to make up the round end part of the semi-circular barrier structure. The term "structure" is intended to mean one or more patterned layers or members, itself or in combination with one or more other patterned layers or members, to form a unit for the desired purpose. 97426.doc 200524461 Terminology "Substrate" is intended to mean a workpiece that may be rigid or flexible and may include one or more layers of one or more materials including, but not limited to, glass, polymer, metal Or ceramic material or a combination thereof. The term "substantially continuous" is intended to mean that a structure extends without interruption and forms a closed geometric element (eg, triangle, rectangle, circle, loop, irregular shape, etc.). The term "transparent" is intended to mean the ability to transmit at least 70% of radiation at a wavelength or wavelength spectrum (eg, visible light). As used herein, the term "comprises / comprising,", "" includes / including "' ',' Has / having 'or any other variant thereof is intended to override non-exclusive inclusions. For example, a method, process, article, or device that contains a list of elements is not necessarily limited to those elements, but may include other elements that are not explicitly listed or that are inherent to the method, process, article, or device. In addition, unless expressly stated to the contrary, or " means inclusive or, rather than exclusive, L 'any of the following-the conditions satisfy the condition B. A is true (or exists) and 8 is False (or non-existent), a is false (or non-existent) and B is true (or existent), and all of [3] are true (or existent). μm, the use of-(a / an) " is used to describe the elements and parts of the present invention. This is done merely for the sake of giving the general meaning of the invention. :::: Enclose one or at least one ’and include the singular as well, unless clearly thinking otherwise. Team is not otherwise defined

^ 吓便用的所有技術及科學術言丑 均具有熟習本發明所屬枯奸本 口口 續屬技★者所普遍瞭解的相同意義。儘 S下文描述了適當的方法及㈣ 試中亦可使用盘太含一. 社+發月之實踐或測 田述之方法及材料類似或均等之方 97426.doc -14· 200524461 法及材料。本文所提到之所有公開案、專利申請案、專利 及其它參考文獻皆以全文引用的方式倂入本文中。在衝突 的情況下,包括定義在内之本說明書將控制。另外,材料、 方法及實例僅為例示性,且無意欲進行限制。 2·電子裝置結構 可獲益於本發明之使用的電子裝置包括(但不限於):發 光二極體、有機顯示器,、光伏打裝置、場發射顯示器、電 化顯示器、電漿顯示器、微電機系統、光子裝置、及其它 使用積體電路之電子裝置(例如,包括(但不限於)加速器: 迴轉儀、運動感應器)。因此,封裝裝配之尺寸可非常小, 且將基於與其一起使用之電子裝置的類型而變化。 參看圖1至圖3,說明一實施例之電子裝置,且一般將其 標為500。在一特定實施例中,儘管該電子裝置為一有機電 子裝置C該電子裝置亦可為任何包括需要密封之内部區 域的電子裝置。如圖所示,在圖i至圖3中,電子裝置5〇〇 包括基板502。電活性區域504形成於基板5〇2上。另外, 電子裝置500包括一封裝裝配5〇6。如圖2及圖3所示,封裝 裝配506包括一表面508及一自該表面5〇8(即,障壁片之表 面)延伸的障壁結構510。在一特定實施例中,障壁結構 51〇(由障壁材料製成)係沉積於或另外形成於封裝裝配5〇6 之表面上的玻璃珠粒。障壁結構510具有一厚度,即在其峰 值延伸下其自障壁片延伸之尺寸。該厚度可為均一厚度, 或可依障壁片之類型、障蔽片及障壁結構之製造方式、及 封裝裝配最終所附著之裝置基板的類型而變化。例如,障 97426.doc -15- 200524461 壁結構510可藉由首先沉積一實體形態(諸如糊狀物或流體) 之障壁材料且然後進一步處理該材料以製作障壁結構而製 付。或者其可藉由(例如)其它技術製作以獨立於障壁片製作 該障壁結構或在共同製造障壁片5〇8與障壁結構510的位置 製作該障壁結構。 圖2及圖3亦說明,封裝裝配506可形成為在障壁片508上 具有一内部區域5 12,可在該内部區域512上沉積一或多個 層514,例如在内部區域512之頂部(其可製作成具有一凹腔 或可大體上平坦)上或在内部區域512之側面上。儘管將該 區域展示為成形障壁片之部分,但若障壁結構元件5丨〇足夠 厚以致咼於待封裝之電活性區域,則該内部區域可藉由使 用該元件510本身來製作。層514包括吸氣劑材料。 在另一特定實施例中,如圖4及5所示,可使用黏著劑 5 16(其可沉積於一個以上之位置;如52〇所示,其係一說明 不同黏著劑使用的替代實施例)將封裝裝配5〇6固定至基板 502 〇 在一特定實施例中,當使用黏著劑516將封裝裝配5〇6固 定至基板502時,如圖5中所描繪,障壁結構51〇及黏著劑516 在封裝裝配506與基板502之間形成一障壁518以使其間之 間隙最小化。當封裝該裝置時,障壁結構未同時融合至障 壁片之表面及裝置基板。另外,在一特定實施例中,障壁 結構510與基板502之間的距離不大於丨微米。因此,經由黏 著劑516之滲透路徑實質上得以變窄,且通過黏著劑516之 水滲透實質上得以降低。 97426.doc -16- 200524461 現參看圖6及圖7,描緣一替代實施例之電子裝置,且一 般將其標為1000。如圖6所示,電子裝置1〇〇〇包括一基板 1002。另外,電活性區域1〇〇4形成於基板1〇〇2上。此外, 電子裝置1000包括一封裝裝配1006。如圖6及圖7所示,封 裝裝配1006包括一表面1〇〇8及一固定至該表面1〇〇8的障壁 結構1010。在一特定實施例中,障壁結構1010係沉積於或 另外形成於該封裝裝配1006之表面上的玻璃珠粒。圖6及圖 7亦描繪倂入於障壁結構1〇1〇中的發熱元件1012。在一特定 實施例中,可選擇性地加熱該發熱元件1012。在一特定實 施例中,發熱元件1〇 12可由具有氮化矽之化合物及耐火金 屬(諸如鈦、鎢及鈕)製成,且當該發熱元件1012經受電磁輻 射時其可發熱。在另一特定實施例中,該發熱元件可為當 對其施加電流時發熱之電阻線。在一特定實施例中,包括 源1014,且該源可選擇性地將發熱元件1012曝露於電磁輕 射或電流。加熱可在裝配封裝裝配與電子裝置之前發生, 或在一些實施例中係在此之後發生。 在裝配過程中,可將障蔽結構1〇1〇置於基板1002與封裝 裝配1006之間以使該障壁結構與基板1〇〇2及封裝裝配1〇〇6 並置。另外,在裝配過程中,可對發熱元件1012施加電磁 輻射或電流以加熱該發熱元件1012。當發熱元件ι012之溫 度達到障壁結構1010之熔點時,障壁結構1〇1〇將熔融且與 基板1002及/或封裝裝配1〇〇6融合。因此,可藉由障壁結構 1010在基板1002與封裝裝配1〇〇6之間形成氣密封。在一特 定實施例中,對障壁結構1010局部施加熱量可大體上防止 97426.doc -17- 200524461 電子活性層1004受到由否則熔融障壁結構1〇1〇且將其融合 至本文所述之基板1002及封裝裝配1〇〇6所需的熱量或電磁 輻射所引起的損壞。 圖6及圖7進一步說明,封裝裝配1〇〇6可形成為具有一内 部區域1016,可在該内部區域1〇16上沉積一或多個層 1018 ’例如在該内部區域1〇16之頂部上或該内部區域1〇16 之側面上。在一特定實施例中,層1〇18包括吸氣劑材料, 例如本文所述之一或多種吸氣劑材料。儘管未在圖中予 以說明,但進一步預想:可將障壁結構1〇1〇沉積於裝置基 板上’其中以圖式中另外描繪之方式使用吸氣劑材料。 參看圖8 ’其展示一電子裝置之一替代實施例,且將其標 為1200。圖8描繪一包括一基板1202之電子裝置1200。另 外,電活性區域1204係形成於基板1202上。電子裝置12〇〇 亦包括一封裝裝配1206。如圖8所示,封裝裝配1206包括一 表面1208,障壁結構1210可固定至該表面1208。在一特定 實施例中,障壁結構1210係可沉積於封裝裝配12〇6之表面 1208與基板1202之間的玻璃珠粒。圖8亦描繪了可倂入於封 裝裝配1206之表面1208中的發熱元件1212。 在一特定實施例中,當將障壁結構1210置於封裝裝配 1206與基板1202之間以使其與封裝裝配1206及基板1202並 置時,發熱元件1212接觸障壁結構1210。另外,當加熱發 熱元件1212時,障壁結構1210可溶融且與封裝裝配1206及 基板融合’以在電活性區域1204周圍形成氣密封。與發熱 元件1212相關之區域化加熱大體上降低了由過熱所造成之 97426.doc -18- 200524461 對電活性區域1204的損壞。 參看圖9,展示了 一電子裝置之一替代實施例,且將其標 為1300。圖9描繪了 一包括一基板1302的電子裝置1300。另 外,電活性區域1304形成於基板1302上。電子裝置1300亦 包括一封裝裝配1306。如圖9所示,封裝裝配1306包括一表 面1308,障壁結構1310可固定至該表面13 〇8。在一特定實 施例中,障壁結構1310係可沉積於封裝裝配1306之表面 1308與基板1302之間的玻璃珠粒。圖9亦描繪可將發熱元件 1312倂入於電活性區域1304周圍之基板1302中。 在一特定實施例中,當將障壁結構13 1 〇置於封裝裝配 1306與基板1302之間以使其與封裝裝配13〇6及基板1302並 置時,發熱元件13 12接觸障壁結構1310。另外,當加熱發 熱元件1312時,障壁結構1310可熔融且與封裝裝配13〇6及 基板融合,以在電活性區域1304周圍形成氣密封。 現參看圖10及圖11,其說明一實施例之電子裝置,且一 般地將其標為1400。如圖1〇及圖u所示,電子裝置14〇〇包 括一基板1402。電活性區域1404形成於基板14〇2上。另外, 電子裝置1400包括一封裝裝配1406。如圖1〇及圖丨丨所示, 封裝裝配1406包括一表面1408及一自該表面14〇8延伸之障 壁結構1410。在一特定實施例中,障壁結構141〇係與封裝 裝配1406—體形成之玻璃珠粒。在此實例中,障壁結構μ 了由與卩旱壁片中所用之材料相同或不同的材料製成,且可 使用一模製技術來製作,且可為任何所要障壁結構輪廓。 在圖10之說明中,障壁結構1410之厚度在其寬度上發生變 97426.doc -19- 200524461 化。在一特定實施例中,可使用黏著劑1412將封裝裝配1406 固定至基板14〇2。在一特定實施例中,當使用黏著劑1412 將封裝裝配1406固定至基板14〇2時,如圖11所描繪,黏著 劑1412與障壁結構1410在封裝裝配1406與基板1402之間形 成氣密障壁1418。 圖12說明另一實施例之電子裝置,一般將其標為16〇〇。 如圖12所示’電子裝置1600包括一基板1602。電活性區域 1604形成於基板16〇2上,另外,電子裝置16〇〇包括一封裝 裝配1606。如圖12所示,封裝裝配1606包括一表面16〇8及 一自該表面1608延伸之第一咬合障壁結構1610。在一特定 實施例中,該第一咬合障壁結構161〇係自該封裝裝配16〇6 之表面1608延伸的大體上連續之嚙合肋條。另外,該大體 上連續之喃合肋條係與封裝裝配16〇6一體形成,且具有大 體上半圓形之橫截面。圖12亦說明,基板1602包括作為第 一咬合障壁結構1610之互補物的第二咬合障壁結構1612。 特別地,第二咬合結構1612係經對應地尺寸化且定形以接 收第一咬合障壁結構161〇的大體上連續之嚙合槽。在一特 疋實施例中,當裝配電子裝置1 600時,第一咬合障壁結構 1610配合入第二咬合結構1612中。另外,在一特定實施例 中,可藉由加熱咬合結構1610、1612所在區域或其周圍區 域以融合該等咬合結構而將封裝裝配16〇6固定至基板 1602。在另一特定實施例中,可使用黏著劑將第一咬合障 壁結構1610固定至第二咬合結構1612。 圖13描繪另一實施例之電子裝置,其標為17〇〇。在此特 97426.doc -20- 200524461 定實施例中,電子裝置1700包括一基板17〇2,且電活性區 域1704形成於基板1702上。另外,該基板包括一與該基板 1702—體形成的大體上連續之嚙合肋條17〇6。如圖㈠所 示,電子裝置1700包括一封裝裝配17〇8。圖13描繪,封裝 裝配1708包括一表面1710,且其中形成一大體上連續之嚙 合槽1712。在一特定實施例中,嚙合肋條17〇6及嚙合槽 均具有半圓形橫截面。 圖14說明另一實施例之電子裝置18〇〇,該電子裝置18〇〇 具有一自封裝裝配1804延伸且可配合入基板1808中所形成 的大體上連續之嚙合槽1806的大體上連續之嚙合肋條 1802。如圖14所示,嚙合肋條18〇2及嚙合槽18〇6均具有矩 形橫截面。 參看圖15,其說明又一實施例之電子裝置19〇〇 ,該電子 裝置1900包括一自基板19〇4延伸且可配合入封裝裝配19〇8 中所形成的大體上連續之嚙合槽19〇6的大體上連續之嚙合 肋條1902。如圖15所示,嚙合肋條19〇2及嚙合槽19〇6均具 有矩形橫截面。 圖16說明另一實施例之電子裝置2〇〇〇,該電子裝置2〇〇〇 具有一自封裝裝配2004延伸且可配合入基板2008中所形成 的大體上連續之嚙合槽2006的大體上連續之嚙合肋條 2002。如圖ι6所示,嚙合肋條2〇〇2及嚙合槽2〇〇6均具有三 角形橫截面。 參看圖17,其說明又一實施例之電子裝置2100,該電子 裝置2100包括一自基板2104延伸且可配合入封裝裝配2108 97426.doc -21 - 200524461 申所形成的大體上連續之嚙合槽2106的大體上連續之嚙合 肋條2102。如圖17所示,嚙合肋條2102及嚙合槽2106均具 有三角形橫截面。 圖18說明再一實施例之電子裝置2200,該電子裝置2200 具有一自封裝裝配2204延伸且可配合入基板2208中所形成 的大體上連續之嚙合槽2206的大體上連續之嚙合肋條 2202。如圖18所示,嚙合肋條2202及嚙合槽2206均具有截 頭圓錐形橫截面。 參看圖19,其說明另一實施例之電子裝置2300,該電子 裝置2300包括一自基板2304延伸且可配合入封裝裝配2308 中所形成的大體上連續之嚙合槽2306的大體上連續之嚙合 肋條2302。如圖19所示,嚙合肋條2302及嚙合槽2306均具 有截頭圓錐形橫截面。 圖20及圖21說明又一實施例之電子裝置2400,該電子裝 置2400具有一自封裝裝配2404延伸之第一大體上連續之嚙 合肋條2402,且如圖21所示,當封裝裝配2404與基板2408 嚙合時,該第一大體上連續之嚙合肋條2402可環繞一自基 板2408延伸的第二大體上連續之嚙合肋條2406。如圖21所 示,嚙合肋條2402、2406為互補形狀,且均具有三角形橫 截面。 參看圖22,其說明另一實施例之電子裝置2600,該電子 裝置2600包括一自封裝裝配2604延伸且可大體上位於基板 2608中所形成的大體上連續之嚙合肋條2606内或大體上由 該嚙合肋條2606環繞的大體上連續之嚙合肋條2602。如圖 97426.doc -22- 200524461 22所示,嚙合肋條2602、2606為互補形狀,且均具有三角 形橫截面。 圖23說明又一實施例之電子裝置2700,該電子裝置2700 具有一自封裝裝配2704延伸之第一大體上連續之嚙合肋條 2702,且當封裝裝配2704與基板2708嚙合時,該第一大體 上連續之嚙合肋條2702可大體上環繞一自基板2708延伸的 第二大體上連續之嚙合肋條2706。如圖23所示,嚙合肋條 2702、2706為互補形狀,且均具有正方形橫截面。 參看圖24,其說明另一實施例之電子裝置2800,該電子 裝置2800包括一自封裝裝配2804延伸且可大體上位於基板 2808中所形成的大體上連續之嚙合肋條2806内或大體上由 該嚙合肋條2806環繞的大體上連續之嚙合肋條2802。如圖 24所示,嚙合肋條2802、2806為互補形狀,且均具有正方 形橫截面。 圖25說明又一實施例之電子裝置2900,該電子裝置2900 具有一自封裝裝配2904延伸的第一大體上連續之嚙合肋條 2902,且當封裝裝配2904與基板2908嚙合時,該第一大體 上連續之嚙合肋條2902可環繞一自基板2908延伸的第二大 體上連續之嚙合肋條2906。如圖25所示,嚙合肋條2902、 2906為互補形狀,且均具有截頭圓錐形橫截面。 參看圖26,其說明再一實施例之電子裝置3000,該電子 裝置3000包括一自封裝裝配3004延伸且可大體上位於基板 3008中所形成的大體上連續之嚙合肋條3006内或大體上由 該嚙合肋條3006環繞的大體上連續之嚙合肋條3002。如圖 97426.doc -23- 200524461 26所示,嚙合肋條3〇〇2、3006為互補形狀。 現參看圖27,其說明標號為3100之封裝裝配的平面圖。 如圖27所示,封裝裝配3100包括一由一自該封裝裝配31〇〇 之表面延伸的第一障壁結構3104所環繞之内部區域31〇2。 第一卩早壁結構3 106自圍繞第一障壁結構3 104之封裝裝配 3 100的表面延伸。在一特定實施例中,每一障壁結構3丨〇4、 3 106為嚙合肋條、嚙合槽或其組合。另外,在一特定實施 例中’每一障壁結構3104、3106可具有半圓形、矩形、三 角形、截頭圓錐形或正方形橫截面。如圖27所示,第一層 吸氣劑材料3108可沉積於内部區域3102内封裝裝配3100之 表面上。第二層吸氣劑材料3 11 〇可沉積於内部區域3丨〇2與 第一障壁結構3104之間的封裝裝配3100之表面上。第三層 吸氣劑材料3112可沉積於第一障壁結構3104與第二障壁結 構3 106之間的封裝裝配31〇〇之表面上。另外,第四層吸氣 劑材料3114可沉積於第二障壁結構3106周圍之封裝裝配 3100之表面上。 在一特定實施例中,可自封裝裝配3100之構造中省略結 構3104、3106中任一結構。另外,可自封裝裝配3100之構 造中省略吸氣劑材料層3108、3110、3112、3114的任何組 合0 圖28說明標號為41 〇〇的另一實施例之封裝裝配之橫截面 圖。内部區域4102係由障壁結構4104形成,且組態在裝置 活性區域4120之外部。内部區域4102包括吸氣劑材料 4108。圖中未展示將封裝裝配黏結至裝置4122之黏著劑。 97426.doc -24- 200524461 a自該等圖式中可明瞭’障壁結構可位於障壁片上以使得 备封裝該裝置時其可在電活性區域之外部, 構可在障壁片之周邊邊綠μ 寻|早土、、、口 緣上、直接相鄰於該邊緣、或遠離 u、緣而處於更内σρ。儘管不需要間隔物來將封裝裝配提 離Α置之基板,但右需要亦可視情況使用此等間隔物。 —在本文所述之每-實施例中,優於使用黏著劑作為主要 在:兀件的封裝技術’在封裝裝配與裝置基板之間所形成 的被封大體上降低了污染物滲透穿過該密封,同時優於將 障壁結構融合或燒結至障壁表面及裝置基板兩者之密封要 素,改良了製造選項。 在一使用發熱元件(例如,參見圖7元件1〇12)的實施例 中,加熱含有玻璃之材料以視需要將具有玻璃粒子之障壁 結構融合至障壁片或融合至障壁片及裝置基板兩者。 在一些實施例中,將障壁結構組態成允許其與裝置基板 接觸;在其它實施例中,將(I章壁結構組態成不允許接觸; 在其它實施例中,將障壁結構組態成使得當封裝完成時其 距離裝置基板不大於1微米。在此等實施例中,已發現許多 應用可接受污染物之滲透,且黏著劑之選擇可主要基於除 了穿過該黏著劑之污染物滲透率之外的因素進行,諸如與 (僅舉幾例)黏著劑強度、UV耐久性、環境問題、價格及施 加簡易性相關之黏著劑品質。已發現,在一些實施例中, 使用(例如)圖28所示之裝配來封裝像素化(pixilated)單色有 機發光二極體(使用玻璃障壁結構、環氧黏著劑及沸石吸氣 劑材料)。來自環境測試(攝氏60度/85%相對濕度及攝氏85 97426.doc -25- 200524461 度/85 /〇相對濕度)之結果顯示了出乎意料之結果··在第一組 條件下曝路1_小時後無可量測之像素收縮;且當在第二 、、且條件下K時n露至&等測試條彳丨_小時後量測 到小於5%之像素收縮。 在貝化例中’障壁結構係由具有小於1〇_2 g/m2/24 hr/atm之滲透率的障壁材料製成。在另一實施例中,障壁結 構具有小於10 2 g/m2/24 hr/atn^滲透率。在一實施例中, p早壁結構在室溫下對氣體及濕氣具有小於約i〇_6 g/m2/24 hr/atm之滲透率。在—實施例中,障壁材料為無機材料。 在一實施例中,障壁結構係由選自玻璃、陶瓷、金屬、 金屬氧化物、金屬氮化物及其組合之材料製成。在一實施 例中’障壁材料包含一具有障壁材料之塗層的非氣密基 材。在一實施例中,障壁結構具有與裝置之電子活性顯示 組件(例如’其可對應於圖3中之特徵504、圖7中之1004、 或圖9中之1304)之厚度相同的厚度。 在一實施例中,障壁材料為玻璃,且係作為玻料組合物 進行軛加。本文所用之術語”玻料組合物,,欲意指包含分散 於有機介質中之玻璃粉末的組合物。在將該玻料組合物施 加至障壁片後,固化且緻密化其以形成玻璃結構。本文所 用之術語,’固化”意指充分乾燥以穩定所沉積之粉組合物, 諸如防止組合物不可接受地塗抹至不當位置或防止因儲存 έ有固化粉組合物之表面(例如,因堆疊)而造成損壞。術語 緻禮、化”意指加熱或再加熱該組合物以大體上驅除所有揮 發物(包括(但不限於)液體介質)且使得玻璃粉末粒子融合 97426.doc -26- 200524461 且黏附至其所施加至之障壁片的表面。緻密化可在氧化或· Μ性氣氛(諸如空氣、氮或氬)中進行,其中緻密化溫度及時 間足以揮發(燒盡)裝配層中之有機材料且燒結此等層中之 任何含有玻璃之材料,從而緻密厚的薄膜層。隨著緻密化, 玻璃之滲透率降低。在一實施例中,完全緻密化玻璃。在 實%例中’緻密化係由所燒製之玻璃的透明度決定,完 全透明度指示充分的緻密化。 玻料組合物已為吾人熟知,且許多商業材料可購得。在 實知例中,以重量百分比計,玻璃粉末包含1-50% Si02、聲 〇 80/。B2〇3、〇·9〇% Bi2〇3、0-90% PbO、0-90% P205、0-60%^ All the technical and scientific words used for scare have the same meaning as those familiar with the buzzwords of the present invention. The following describes the appropriate method and the test can also be used in the test. It is also possible to use the practice or test of the method of the society + hair month. The methods and materials of Tian Shu are similar or equal. All publications, patent applications, patents, and other references mentioned herein are incorporated herein by reference in their entirety. In case of conflict, the present specification, including definitions, will control. In addition, the materials, methods, and examples are illustrative only and are not intended to be limiting. 2. Electronic device structure Electronic devices that can benefit from the present invention include (but are not limited to): light-emitting diodes, organic displays, photovoltaic devices, field emission displays, electrochemical displays, plasma displays, and micro-motor systems , Photonic devices, and other electronic devices using integrated circuits (for example, including (but not limited to) accelerators: gyroscopes, motion sensors). Therefore, the size of the package assembly can be very small and will vary based on the type of electronic device used with it. Referring to Figs. 1 to 3, an electronic device according to an embodiment is described, and it is generally designated as 500. In a specific embodiment, although the electronic device is an organic electronic device C, the electronic device may also be any electronic device including an internal area that needs to be sealed. As shown, in FIGS. 1 to 3, the electronic device 500 includes a substrate 502. The electroactive region 504 is formed on the substrate 502. In addition, the electronic device 500 includes a package assembly 506. As shown in FIGS. 2 and 3, the package assembly 506 includes a surface 508 and a barrier structure 510 extending from the surface 508 (i.e., the surface of the barrier sheet). In a specific embodiment, the barrier structure 51 (made of a barrier material) is a glass bead deposited or otherwise formed on the surface of the package assembly 506. The barrier structure 510 has a thickness, that is, a size at which it extends from the barrier sheet under its peak extension. The thickness may be a uniform thickness, or may vary depending on the type of the barrier sheet, the manufacturing method of the barrier sheet and the barrier structure, and the type of the device substrate to which the package assembly is ultimately attached. For example, barrier 97426.doc -15- 200524461 wall structure 510 may be made by first depositing a barrier material in a solid form, such as a paste or fluid, and then further processing the material to make the barrier structure. Or it can be made by, for example, other techniques to produce the barrier structure independently of the barrier sheet or the barrier structure 508 and the barrier structure 510 are co-manufactured. 2 and 3 also illustrate that the package assembly 506 may be formed with an inner region 512 on the barrier sheet 508. One or more layers 514 may be deposited on the inner region 512, such as on top of the inner region 512 (which It may be made with a cavity or may be substantially flat) or on the side of the inner region 512. Although this area is shown as a part of the formed barrier sheet, if the barrier structural element 5 is thick enough to be trapped in the electroactive region to be packaged, the internal region can be fabricated by using the element 510 itself. The layer 514 includes a getter material. In another specific embodiment, as shown in FIGS. 4 and 5, an adhesive 5 16 (which can be deposited in more than one location; as shown at 52) is an alternative embodiment illustrating the use of different adhesives ) Fixing the package assembly 506 to the substrate 502. In a specific embodiment, when the package assembly 506 is fixed to the substrate 502 using the adhesive 516, as depicted in FIG. 516 A barrier 518 is formed between the package assembly 506 and the substrate 502 to minimize the gap therebetween. When the device is packaged, the barrier structure is not fused to the surface of the barrier sheet and the device substrate at the same time. In addition, in a specific embodiment, the distance between the barrier structure 510 and the substrate 502 is not greater than 微米 microns. Therefore, the permeation path through the adhesive 516 is substantially narrowed, and the water permeation through the adhesive 516 is substantially reduced. 97426.doc -16- 200524461 Referring now to FIG. 6 and FIG. 7, an electronic device of an alternative embodiment is described, and it is generally labeled as 1000. As shown in FIG. 6, the electronic device 1000 includes a substrate 1002. In addition, an electroactive region 1000 is formed on the substrate 2000. In addition, the electronic device 1000 includes a package assembly 1006. As shown in Figs. 6 and 7, the package assembly 1006 includes a surface 1008 and a barrier structure 1010 fixed to the surface 1008. In a specific embodiment, the barrier structures 1010 are glass beads deposited or otherwise formed on the surface of the package assembly 1006. FIG. 6 and FIG. 7 also depict the heating element 1012 embedded in the barrier structure 1010. In a specific embodiment, the heating element 1012 can be selectively heated. In a specific embodiment, the heating element 1012 may be made of a compound having silicon nitride and a refractory metal such as titanium, tungsten, and a button, and may generate heat when the heating element 1012 is subjected to electromagnetic radiation. In another specific embodiment, the heating element may be a resistance wire that generates heat when a current is applied thereto. In a particular embodiment, a source 1014 is included, and the source can selectively expose the heating element 1012 to electromagnetic radiation or current. The heating may occur before the package assembly and the electronic device are assembled, or in some embodiments after this. During the assembly process, the barrier structure 1010 may be placed between the substrate 1002 and the package assembly 1006 so that the barrier structure is juxtaposed with the substrate 1002 and the package assembly 1006. In addition, during the assembling process, electromagnetic radiation or current may be applied to the heating element 1012 to heat the heating element 1012. When the temperature of the heating element ι012 reaches the melting point of the barrier structure 1010, the barrier structure 1010 will melt and fuse with the substrate 1002 and / or the package assembly 1006. Therefore, the barrier structure 1010 can be used to form an air-tight seal between the substrate 1002 and the package assembly 1006. In a specific embodiment, locally applying heat to the barrier structure 1010 can substantially prevent 97426.doc -17- 200524461 electronically active layer 1004 from otherwise melting the barrier structure 1010 and fusing it to the substrate 1002 described herein And the damage caused by the heat or electromagnetic radiation required for the package assembly. 6 and 7 further illustrate that the package assembly 1006 may be formed to have an internal region 1016, and one or more layers 1018 'may be deposited on the internal region 1016, such as on top of the internal region 1016. On or on the side of the internal area 1016. In a particular embodiment, layer 1018 includes a getter material, such as one or more getter materials described herein. Although not illustrated in the figure, it is further envisioned that the barrier structure 1010 can be deposited on the device substrate ', wherein a getter material is used in a manner otherwise depicted in the drawing. Referring to Fig. 8 ', an alternative embodiment of an electronic device is shown and designated 1200. FIG. 8 depicts an electronic device 1200 including a substrate 1202. In addition, the electroactive region 1204 is formed on the substrate 1202. The electronic device 120 also includes a package assembly 1206. As shown in FIG. 8, the package assembly 1206 includes a surface 1208 to which the barrier structure 1210 can be fixed. In a specific embodiment, the barrier structure 1210 is a glass bead that can be deposited between the surface 1208 and the substrate 1202 of the package assembly 1206. FIG. 8 also depicts a heating element 1212 that can fit into the surface 1208 of the package assembly 1206. In a specific embodiment, when the barrier structure 1210 is placed between the package assembly 1206 and the substrate 1202 so as to be juxtaposed with the package assembly 1206 and the substrate 1202, the heating element 1212 contacts the barrier structure 1210. In addition, when the heating element 1212 is heated, the barrier structure 1210 is soluble and fused with the package assembly 1206 and the substrate 'to form an air-tight seal around the electroactive region 1204. The localized heating associated with the heating element 1212 substantially reduces the damage to the electroactive area 1204 caused by overheating 97426.doc -18- 200524461. Referring to Fig. 9, an alternative embodiment of an electronic device is shown and designated 1300. FIG. 9 illustrates an electronic device 1300 including a substrate 1302. In addition, an electroactive region 1304 is formed on the substrate 1302. The electronic device 1300 also includes a package assembly 1306. As shown in FIG. 9, the package assembly 1306 includes a surface 1308 to which the barrier structure 1310 can be fixed. In a specific embodiment, the barrier structure 1310 is a glass bead that can be deposited between the surface 1308 of the package assembly 1306 and the substrate 1302. FIG. 9 also depicts that the heating element 1312 can be embedded in the substrate 1302 around the electroactive region 1304. In a specific embodiment, when the barrier structure 13 10 is placed between the package assembly 1306 and the substrate 1302 so as to be juxtaposed with the package assembly 130 and the substrate 1302, the heating element 13 12 contacts the barrier structure 1310. In addition, when the heating element 1312 is heated, the barrier structure 1310 can be melted and fused with the package assembly 1306 and the substrate to form an air-tight seal around the electrically active region 1304. 10 and FIG. 11, an electronic device according to an embodiment is illustrated, and is generally designated as 1400. As shown in FIGS. 10 and u, the electronic device 1400 includes a substrate 1402. An electroactive region 1404 is formed on the substrate 1402. In addition, the electronic device 1400 includes a package assembly 1406. As shown in FIG. 10 and FIG. 丨, the package assembly 1406 includes a surface 1408 and a barrier structure 1410 extending from the surface 1408. In a specific embodiment, the barrier structure 1410 is a glass bead formed with the package assembly 1406. In this example, the barrier structure μ is made of the same or different material as that used in the arid wall sheet, and can be made using a molding technique, and can be any desired barrier structure contour. In the description of FIG. 10, the thickness of the barrier structure 1410 is changed in its width 97426.doc -19-200524461. In a specific embodiment, the adhesive assembly 1412 can be used to fix the package assembly 1406 to the substrate 1402. In a specific embodiment, when using the adhesive 1412 to fix the package assembly 1406 to the substrate 1402, as depicted in FIG. 11, the adhesive 1412 and the barrier structure 1410 form an air-tight barrier between the package assembly 1406 and the substrate 1402. 1418. FIG. 12 illustrates an electronic device according to another embodiment, which is generally labeled as 160. As shown in FIG. 12 ', the electronic device 1600 includes a substrate 1602. The electroactive region 1604 is formed on the substrate 1602. In addition, the electronic device 1600 includes a package assembly 1606. As shown in FIG. 12, the package assembly 1606 includes a surface 1608 and a first occlusion barrier structure 1610 extending from the surface 1608. In a particular embodiment, the first bite barrier structure 1610 is a substantially continuous intermeshing rib extending from a surface 1608 of the package assembly 1606. In addition, the substantially continuous ribs are integrally formed with the package assembly 1606 and have a generally semicircular cross section. FIG. 12 also illustrates that the substrate 1602 includes a second occlusion barrier structure 1612 as a complement to the first occlusion barrier structure 1610. In particular, the second occlusal structure 1612 is correspondingly sized and shaped to receive a substantially continuous engagement groove of the first occluder barrier structure 1610. In a specific embodiment, when the electronic device 1 600 is assembled, the first bite barrier structure 1610 fits into the second bite structure 1612. In addition, in a specific embodiment, the package assembly 1606 can be fixed to the substrate 1602 by heating the area where the bite structures 1610, 1612 are located or the surrounding area to fuse the bite structures. In another specific embodiment, an adhesive may be used to secure the first occlusal barrier structure 1610 to the second occlusal structure 1612. FIG. 13 depicts an electronic device of another embodiment, which is labeled 1700. In this specific example of 97426.doc -20-200524461, the electronic device 1700 includes a substrate 1702, and an electroactive region 1704 is formed on the substrate 1702. In addition, the substrate includes a substantially continuous meshing rib 1706 formed integrally with the substrate 1702. As shown in FIG. ㈠, the electronic device 1700 includes a package assembly 1708. Figure 13 depicts that the package assembly 1708 includes a surface 1710 with a substantially continuous engagement groove 1712 formed therein. In a specific embodiment, the engaging ribs 1706 and the engaging grooves each have a semi-circular cross section. FIG. 14 illustrates an electronic device 1800 of another embodiment. The electronic device 1800 has a substantially continuous engagement that extends from the package assembly 1804 and can fit into a substantially continuous engagement groove 1806 formed in the substrate 1808. Ribs 1802. As shown in Fig. 14, the engaging ribs 1802 and the engaging grooves 1806 each have a rectangular cross section. Referring to FIG. 15, there is illustrated an electronic device 1900 according to another embodiment. The electronic device 1900 includes a substantially continuous engaging groove 19 extending from the substrate 1904 and capable of being fitted into the package assembly 1908. 6 substantially continuous meshing ribs 1902. As shown in FIG. 15, the engaging ribs 19202 and the engaging grooves 1906 each have a rectangular cross section. FIG. 16 illustrates an electronic device 2000 of another embodiment. The electronic device 2000 has a substantially continuous engagement groove 2006 that extends from the package assembly 2004 and can fit into a substrate 2008 formed in the substrate 2008. The meshing ribs 2002. As shown in FIG. 6, the engaging rib 2000 and the engaging groove 2006 have a triangular cross section. Referring to FIG. 17, there is illustrated an electronic device 2100 according to another embodiment. The electronic device 2100 includes a substantially continuous engagement groove 2106 extending from a substrate 2104 and capable of mating into a package assembly 2108 97426.doc -21-200524461. The substantially continuous meshing ribs 2102. As shown in Fig. 17, the engaging ribs 2102 and the engaging grooves 2106 each have a triangular cross section. FIG. 18 illustrates an electronic device 2200 according to another embodiment. The electronic device 2200 has a substantially continuous engagement rib 2202 extending from the package assembly 2204 and capable of fitting into a substantially continuous engagement groove 2206 formed in the substrate 2208. As shown in Fig. 18, the engaging rib 2202 and the engaging groove 2206 each have a truncated conical cross section. Referring to FIG. 19, an electronic device 2300 according to another embodiment is illustrated. The electronic device 2300 includes a substantially continuous engagement rib extending from a substrate 2304 and capable of fitting into a substantially continuous engagement groove 2306 formed in a package assembly 2308. 2302. As shown in Fig. 19, the engaging ribs 2302 and the engaging grooves 2306 each have a truncated conical cross section. 20 and 21 illustrate an electronic device 2400 according to another embodiment. The electronic device 2400 has a first substantially continuous engaging rib 2402 extending from the package assembly 2404. As shown in FIG. 21, when the package assembly 2404 and the substrate When 2408 is engaged, the first substantially continuous engagement rib 2402 may surround a second substantially continuous engagement rib 2406 extending from the base plate 2408. As shown in FIG. 21, the engaging ribs 2402 and 2406 are complementary shapes and each has a triangular cross section. Referring to FIG. 22, an electronic device 2600 according to another embodiment is illustrated. The electronic device 2600 includes a substantially continuous engagement rib 2606 extending from a package assembly 2604 and can be positioned substantially within a base plate 2608 or substantially by the same. The engaging ribs 2606 surround a substantially continuous engaging rib 2602. As shown in 97426.doc -22- 200524461 22, the engaging ribs 2602 and 2606 are complementary shapes and each has a triangular cross section. FIG. 23 illustrates an electronic device 2700 according to yet another embodiment. The electronic device 2700 has a first substantially continuous engagement rib 2702 extending from the package assembly 2704, and when the package assembly 2704 is engaged with the substrate 2708, the first substantially The continuous engagement ribs 2702 may generally surround a second substantially continuous engagement rib 2706 extending from the base plate 2708. As shown in FIG. 23, the engaging ribs 2702 and 2706 are complementary shapes and each has a square cross section. Referring to FIG. 24, there is illustrated an electronic device 2800 according to another embodiment. The electronic device 2800 includes a substantially continuous engagement rib 2806 extending from a package assembly 2804 and can be located substantially within a base plate 2808 or substantially by the same. The engaging ribs 2806 surround the substantially continuous engaging ribs 2802. As shown in FIG. 24, the engaging ribs 2802 and 2806 are complementary shapes and each has a rectangular cross section. FIG. 25 illustrates an electronic device 2900 according to yet another embodiment. The electronic device 2900 has a first substantially continuous engagement rib 2902 extending from the package assembly 2904, and when the package assembly 2904 is engaged with the substrate 2908, the first substantially The continuous engagement ribs 2902 may surround a second substantially continuous engagement rib 2906 extending from the base plate 2908. As shown in FIG. 25, the engaging ribs 2902 and 2906 are complementary shapes and each has a truncated conical cross section. Referring to FIG. 26, there is illustrated an electronic device 3000 according to yet another embodiment. The electronic device 3000 includes a substantially continuous engagement rib 3006 extending from the package assembly 3004 and may be located substantially in the base plate 3008 or substantially by the same. A substantially continuous engagement rib 3002 surrounded by the engagement rib 3006. As shown in 97426.doc -23- 200524461 26, the engaging ribs 3002 and 3006 are complementary shapes. Referring now to FIG. 27, a plan view of the package assembly designated 3100 is illustrated. As shown in FIG. 27, the package assembly 3100 includes an inner region 3102 surrounded by a first barrier structure 3104 extending from a surface of the package assembly 3100. The first early wall structure 3 106 extends from the surface of the package assembly 3 100 surrounding the first barrier structure 3 104. In a specific embodiment, each of the barrier structures 3 04, 3 106 is an engagement rib, an engagement groove, or a combination thereof. In addition, in a particular embodiment, 'each barrier structure 3104, 3106 may have a semi-circular, rectangular, triangular, frusto-conical or square cross-section. As shown in FIG. 27, a first layer of getter material 3108 may be deposited on the surface of the package assembly 3100 in the inner region 3102. A second layer of getter material 3 1 10 may be deposited on the surface of the package assembly 3100 between the inner area 3 0 2 and the first barrier structure 3104. The third layer of getter material 3112 may be deposited on the surface of the package assembly 3100 between the first barrier structure 3104 and the second barrier structure 3106. In addition, a fourth layer of getter material 3114 may be deposited on the surface of the package assembly 3100 around the second barrier structure 3106. In a specific embodiment, any one of the structures 3104, 3106 may be omitted from the structure of the package assembly 3100. In addition, any combination of the getter material layers 3108, 3110, 3112, and 3114 can be omitted from the structure of the package assembly 3100. FIG. 28 illustrates a cross-sectional view of a package assembly of another embodiment, designated 4100. The inner area 4102 is formed by the barrier structure 4104 and is arranged outside the active area 4120 of the device. The inner region 4102 includes a getter material 4108. The figure does not show the adhesive that bonds the package assembly to the device 4122. 97426.doc -24- 200524461 a It is clear from these drawings that the 'barrier structure can be located on the barrier sheet so that when the device is packaged, it can be outside the electrically active area, and the structure can be located on the periphery of the barrier sheet. | Earthly soil,,, on the edge of the mouth, directly adjacent to the edge, or farther away from u, the edge is more inward σρ. Although spacers are not required to lift the package assembly off the substrate on which A is placed, these spacers may also be used as appropriate. -In each of the embodiments described herein, the use of an adhesive is preferred over: The packaging technology of the component 'the seal formed between the package assembly and the device substrate substantially reduces the penetration of contaminants through the Sealing is also superior to sealing elements that fuse or sinter the barrier structure to both the barrier surface and the device substrate, improving manufacturing options. In an embodiment using a heating element (for example, see element 1012 in FIG. 7), a glass-containing material is heated to fuse the barrier structure with glass particles to the barrier sheet or to both the barrier sheet and the device substrate as necessary. . In some embodiments, the barrier structure is configured to allow it to be in contact with the device substrate; in other embodiments, the (Chapter I wall structure is configured to not allow contact; When the package is completed, the distance from the device substrate is no more than 1 micron. In these embodiments, it has been found that many applications can accept the penetration of contaminants, and the choice of adhesive can be based mainly on the penetration of contaminants other than the adhesive Factors such as, to name a few, adhesive strength, UV durability, environmental issues, price, and ease of application. It has been found that in some embodiments, use (for example) The assembly shown in Figure 28 is used to package pixilated monochrome organic light-emitting diodes (using glass barrier structures, epoxy adhesives, and zeolite getter materials). From environmental tests (60 ° C / 85% relative humidity) And 85 97426.doc -25- 200524461 degrees / 85 / 〇relative humidity) results show unexpected results. · No measurable pixel collection after 1_ hours of exposure under the first set of conditions And when under the second and K conditions, n is exposed to & and other test strips, and a pixel shrinkage of less than 5% is measured after __ hours. In the shell example, the 'barrier structure is made up of less than 10%. _2 g / m2 / 24 hr / atm permeability barrier material. In another embodiment, the barrier structure has a permeability of less than 10 2 g / m2 / 24 hr / atn ^. In one embodiment, The p-early wall structure has a permeability to gas and moisture of less than about 10-6 g / m2 / 24 hr / atm at room temperature. In an embodiment, the barrier material is an inorganic material. In one embodiment, The barrier structure is made of a material selected from glass, ceramic, metal, metal oxide, metal nitride, and combinations thereof. In one embodiment, the 'barrier material includes a non-hermetic substrate with a coating of the barrier material. In one embodiment, the barrier structure has the same thickness as the electronically active display component of the device (eg, it may correspond to feature 504 in FIG. 3, 1004 in FIG. 7, or 1304 in FIG. 9). In one embodiment, the barrier material is glass and is conjugated as a frit composition. Terms used herein A frit composition is intended to mean a composition comprising glass powder dispersed in an organic medium. After the frit composition is applied to a barrier sheet, it is cured and densified to form a glass structure. As used herein, the term, 'Curing' means sufficiently drying to stabilize the deposited powder composition, such as to prevent the composition from being unacceptably applied to an improper location or to prevent damage due to the surface on which the cured powder composition is stored (eg, due to stacking). The term "To salute, transform" means to heat or reheat the composition to substantially drive off all volatiles (including (but not limited to) liquid media) and cause the glass powder particles to fuse 97426.doc -26- 200524461 and adhere to its application To the surface of the baffle. Densification can be performed in an oxidizing or M atmosphere (such as air, nitrogen or argon), where the densification temperature and time are sufficient to volatilize (burn out) the organic materials in the assembly layer and sinter any glass-containing materials in these layers. Material, thus dense thick film layer. With densification, the permeability of glass decreases. In one embodiment, the glass is fully densified. In the actual example, the 'densification' is determined by the transparency of the fired glass, and full transparency indicates sufficient densification. The frit composition is well known to me and many commercial materials are commercially available. In the known examples, the glass powder contains 1-50% SiO 2 and SiO 80 / in weight percent. B2〇3, 0.90% Bi2 03, 0-90% PbO, 0-90% P205, 0-60%

Li2〇 O-30/o Al2〇3、〇]〇〇/〇 κ2〇、〇]〇0/。Na2〇及 〇 3〇% M〇(其 中’ M選自Ba、Sr、Ca、Zn、Cu、Mg及其混合)。此等玻 璃可3有右干其它氧化物構成。舉例而言,Zr02及Ge02可 部分地倂入該玻璃結構中。 玻璃中之高含量的Pb、Bi或p提供了允許玻料組合物在低 ;〇 C的度下緻密化的極低軟化點。此等玻璃不會在緻 · 么化期間結晶’因為此等元素往往會提供良好的玻璃穩定 性及對其它玻璃元素之高固溶度。 可添加其它玻璃改質劑或添加劑以改質玻璃特性而達成 更佳的與給疋基板之相容性。例如,玻璃之熱膨脹係數 ( )可由低軟化溫度玻璃中其它玻璃組分之相對容量 田之玻璃粉末的額外實例包括彼等包含以下各物中之 一物質的物質:Pb〇、Li2 O-30 / o Al2O3, 0] 0/0 K2O, 0] 0 /. Na20 and 30% Mo (wherein 'M is selected from Ba, Sr, Ca, Zn, Cu, Mg, and a mixture thereof). These glasses may be composed of other oxides. For example, Zr02 and Ge02 can be partially incorporated into the glass structure. The high content of Pb, Bi or p in the glass provides a very low softening point that allows the frit composition to be densified at a low degree. These glasses do not crystallize during the conversion process because these elements tend to provide good glass stability and high solid solubility with other glass elements. Other glass modifiers or additives can be added to modify glass characteristics to achieve better compatibility with the substrate. For example, the coefficient of thermal expansion of glass () can be determined by the relative capacity of other glass components in low softening temperature glass. Additional examples of glass powders include substances that contain one of the following: Pb0,

來控制。 適當之 至少一物 97426.doc -27- 200524461To control. Appropriate at least one thing 97426.doc -27- 200524461

Na2〇、u20、P2〇5、NaF及 CdO及 MO(其中,0為氧,且 Μ 選自Ba、Sr、Pb、Ca、Ζη、Cu、Mg及其混合)。例如,玻 璃可包含·· 10-90重量% Pb〇、〇-20重量% Al2〇3、0-40重量 °/〇 Si〇2、〇-15重量 % b2〇3、〇-15 重量 % Zn〇、〇-85重量 % Βΐ2〇3、0·10 重量 % Na20、〇·5 重量 % Li20、0-45 重量 %P2〇5、 〇-20重量% NaF及0-10重量% cdO。玻璃可包含:0-15重量 % PbO、〇-5重量% a1203、〇-20重量% Si02、〇-15重量% B2〇3、0_15 重量 % ZnO、65-85 重量 0/〇 Bi203、〇_1〇 重量 〇/〇 Na20、〇-5重量% Li2〇、0-29重量 % P205、0-20重量 % NaF 及0-10重量% Cdo。可在球磨機中磨碎玻璃以提供粉末尺 寸化之粒子(在一實施例中,粉末尺寸為2_6微米)。 本文所述之玻璃係藉由習知玻璃製造技術來製造。例 如,玻璃之製備可如下。為了製備500_2000克之量的玻料, 稱量各成分,然後以所要比例混合,且在底部裝載熔爐中 加熱以在始合金坩堝中形成熔融物。加熱溫度視材料而 定,且可進行至使得該熔融物完全變為液體且均質的峰值 溫度(1100-1400°C)及時間。藉由逆向旋轉不銹鋼捲筒來淬 火該等玻璃熔融物以形成10-20密耳厚之玻璃薄片。接著, 研磨所得玻璃薄片以形成50%體積分佈設定在2-5微米之間 的粉末,但粒子尺寸可視封裝裝配之最終施加而變化。然 後,以填充劑及有機介質將玻璃粉末調配成較厚的薄膜組 合物(或”糊狀物")。以包含玻璃及有機介質之總組合物計, 玻料組合物中存在約5至約7 6重量%的量之玻璃粉末。在一 實施例中,有機介質含有水。在一實施例中,有機介質包 97426.doc •28· 200524461 括酯醇。 ”中分散有玻璃之有機介質包含溶解於揮發性有機溶劑 南之有機聚合黏合劑及視情況之其它溶解材料,諸如增塑 、;^片丨刀政劑、剝離劑、消泡劑及潤濕劑。 可藉由機械混合將該等固體與有機介質混合以形成糊狀 ,合物,稱為,,糊狀物",其具有適合印刷之稠度及流變性。 2液體可用作有機介f,且有機介f中可包括水。有機Na20, u20, P205, NaF and CdO and MO (where 0 is oxygen and M is selected from Ba, Sr, Pb, Ca, Zη, Cu, Mg, and mixtures thereof). For example, the glass may include 10-90 wt% Pb0, 0-20 wt% Al2O3, 0-40 wt ° / 〇Si〇2, 0-15 wt% b2 03, 0-15 wt% Zn 〇, 〇-85% by weight Beta-203, 0.10% by weight Na20, 0.5% by weight Li20, 0-45% by weight P205, 〇-20% by weight NaF, and 0-10% by weight cdO. The glass may include: 0-15 wt% PbO, 0-5 wt% a1203, 0-20 wt% Si02, 0-15 wt% B2 03, 0-15 wt% ZnO, 65-85 wt 0 / 〇Bi203, 0_ 10 wt% Na / 20, 0-5 wt% Li20, 0-29 wt% P205, 0-20 wt% NaF, and 0-10 wt% Cdo. The glass can be ground in a ball mill to provide powder-sized particles (in one embodiment, the powder size is 2-6 microns). The glass described herein is manufactured using conventional glass manufacturing techniques. For example, glass can be prepared as follows. In order to prepare a glass frit in an amount of 500-2000 grams, the ingredients are weighed, then mixed in a desired ratio, and heated in a bottom loading furnace to form a melt in a starting alloy crucible. The heating temperature depends on the material and can be reached to a peak temperature (1100-1400 ° C) and time that makes the melt completely liquid and homogeneous. These glass melts are quenched by rotating stainless steel rolls in the opposite direction to form glass flakes of 10-20 mils thick. Next, the resulting glass flakes are ground to form a powder having a 50% volume distribution set between 2 and 5 microns, but the particle size can vary depending on the final application of the package assembly. Then, the glass powder is formulated into a thicker film composition (or "paste") with a filler and an organic medium. Based on the total composition including the glass and the organic medium, about 5 to about The amount of glass powder is about 76% by weight. In one embodiment, the organic medium contains water. In one embodiment, the organic medium includes 97426.doc • 28 · 200524461 including ester alcohol. The organic medium in which glass is dispersed Contains organic polymer binders dissolved in volatile organic solvents and other soluble materials, such as plasticizers; tablets, knifes, strippers, defoamers, and wetting agents. These solids can be mixed with an organic medium by mechanical mixing to form a paste, a compound called, paste, which has a consistency and rheology suitable for printing. 2 Liquid can be used as the organic medium f, and water can be included in the organic medium f. organic

介質必須係固體可以㈣程度之敎性分散於其中的介 質。該介質之流變特性必須使得該組合物具有良好之施加 =性。此等特性包括:㈣以^夠程度之穩定性分散、組 合物之良好施加、適當黏度、觸變性、基板及固體之適當 可濕性、良好的乾燥速率、良好的燒製特性及足以抵抗粗 魯#作的乾燥薄膜強度。在__實施例中,有機介質包含適 合聚合物及一或多種溶劑。The medium must be a medium in which solids can be dispersed to a sufficient degree. The rheological properties of the medium must be such that the composition has good application properties. These characteristics include: 分散 dispersion with sufficient stability, good application of the composition, proper viscosity, thixotropy, proper wettability of substrates and solids, good drying rate, good firing characteristics, and resistance to rudeness # 作 的 dry film strength. In embodiments, the organic medium comprises a suitable polymer and one or more solvents.

在某些實施例中,用於有機介質中之聚合物選自由以下 各物組成之群:乙基纖維素、乙基m纖維素、木松香、 或乙基纖維素與_樹脂之混合物、低碳數醇之聚甲基丙 稀酸脂、及乙二醇單乙酸s旨之單丁基醚、及其混合物。 厚的薄膜組合物中所發現的最廣泛使用之溶劑係乙酸乙 酯、及萜烯(諸如或万-萜品醇)或其與其它溶劑(諸如煤 油二酞酸二丁酯、丁基卡必醇、乙酸丁基卡必醇、己二醇 及高沸點醇類及醇酯(包括異丁基醇及2_乙基己醇)的混合 物。此外,媒劑中亦可包括在施加於基板上後促進快速硬 化的揮發性液體。在_實施例中,介質係選自乙基纖維素 97426.doc -29- 200524461 及Μ品醇。韻該等及其它㈣之各餘合以獲得所要 黏度及揮發性要求。水亦可用作有機介質之部分。 居的薄膜組a物中之有機介質與分散液中之玻料固體之 比率視施加減物时法及所使用之有機介質的類型而 疋,且可變化。通常,分散液將含有5〇-8〇重量%玻料及2〇_5〇 重1%媒劑以獲得良好塗層。在此等限制内,需要使用相 對於固體最少可能量之黏合劑以降低必須藉由熱解來移除 之有機物的量並獲得在燒製時帶來降低收縮的更好的粒子 填料。選擇有機介質之含量以提供適於鑄造、印刷(諸如絲 網印刷或喷墨印刷)、模製、模板印刷、擠壓或喷塗、刷塗、 注射分配塗佈、刮刀塗佈、及類似方法之稠度及流變性。 在絲網印刷的情況中,篩網之網目尺寸控制了所沉積材 料之厚度。在一實施例中,絲網印刷中所使用之篩網具有 自25至600的網目尺寸;在一實施例中,網目尺寸為自5〇 至500 ;在一實施例中,網目尺寸為200-350 ;在另一實施 例中,網目尺寸為自200至275 ;且在另一實施例中,網目 尺寸為自275至350。基於參照之目的,網目尺寸可具有可 改變印刷過程中所形成之薄膜的變化線號。正如大的篩網 線號,愈小的網目尺寸造成愈薄的沉積。 基於參照之目的,關於篩網之網目尺寸,提供下表。篩 網之網目尺寸r之兩種分類為US Sieve Series及Tyler Equivalent,後者有時亦稱作 Tyler Mesh Size 或 Tyler Standard Sieve Series。該等等級之網孔尺寸如下表所給 定,且其提供了粒子尺寸之指示。網號系統係對篩網中每 97426.doc -30- 200524461 線性英吋有多少開口之度量。US篩尺寸與Tyler篩網尺寸之 不同之處在於其為任意編號。 US Sieve Size Tyler Equivalent 開口 2V2網目 mm 8.00 m 0.312 3網目 6.73 0.265 3V2^ 3V2網目 5.66 0.233 4號 4網目 4.76 0.187 5號 5網目 4.00 0.157 6號 6網目 3.36 0.132 7號 7網目 2.83 0.111 8號 8網目 2.38 0.0937 10號 9網目 2.00 0.0787 12號 10網目 1.68 0.0661 14號 12網目 1.41 0.0555 16號 14網目 1.19 0.0469 18號 16網目 1.00 0.0394 20號 20網目 0.841 0.0331 25號 24網目 0.707 0.0278 30號 28網目 0.595 0.0234 35號 32網目 0.500 0.0197 40號 35網目 0.420 0.0165 45號 42網目 0.354 0.0139 50號 48網目 0.297 0.0117 60號 60網目 0.250 0.0098 70號 65網目 0.210 0.0083 80號 80網目 0.177 0.0070 100號 100網目 0.149 0.0059 120號 115網目 0.125 0.0049 140號 150網目 0.105 0.0041 170號 170網目 0.088 0.0035 200號 200網目 0.074 0.0029 230號 250網目 0.063 0.0025 270號 270網目 0.053 0.0021 325號 325網目 0.044 0.0017 400號 400網目 0.037 0.0015 注釋:表來源為AZoM.com。 97426.doc -31 - 200524461 將所沉積之玻料組合物乾燥以移除揮發性有機介質並使 其固化。固化可藉由任何習知方式來進行。在一實施例中, 在約100-120 C的烘箱中加熱該組合物,但該溫度可視所用 之玻璃的軟化點及所用之吸氣劑材料(若使用)的類型而變 化。另外,亦可使用其它技術來加熱玻料而大體上不將障 壁片加熱。然後,視需要緻密化該固化材料。例如,緻密 化可藉由任何習知方式來進行,且可在固化加熱之後立即 作為加熱循環之部分來完成,或可由兩個或兩個以上單獨 的加熱循環實現,在加熱循環之間有或無一定程度的冷 卻。在-些實施例中,玻料組合物係在具有形成燒製物: 的程式化加熱循環之標準厚膜傳送帶熔爐或在箱式爐中於 400-650°C下加熱時緻密化。 當使用玻璃來製作障壁結構時,由玻料組合物所形成之 障壁結構的最終厚度可視沉積方法、組合物中玻璃含量及In certain embodiments, the polymer used in the organic medium is selected from the group consisting of ethyl cellulose, ethyl m cellulose, wood rosin, or a mixture of ethyl cellulose and resin, low Polymethyl acrylate of carbon number alcohol, monobutyl ether of ethylene glycol monoacetic acid, and mixtures thereof. The most widely used solvents found in thick film compositions are ethyl acetate, and terpenes (such as or ten-terpineol) or with other solvents (such as kerosene dibutyl diphthalate, butyl carbohydrate) Alcohol, butylcarbitol acetate, hexanediol, and mixtures of high-boiling alcohols and alcohol esters (including isobutyl alcohol and 2-ethylhexanol). In addition, the vehicle can also be included on the substrate A volatile liquid that promotes rapid hardening later. In the embodiment, the medium is selected from ethyl cellulose 97426.doc -29- 200524461 and M pinol. The balance of these and other rheniums to obtain the desired viscosity and Volatility requirements. Water can also be used as part of the organic medium. The ratio of the organic medium in the thin film group a to the glass frit solids in the dispersion depends on the method used when subtracting substances and the type of organic medium used. And can vary. Generally, the dispersion will contain 50-880 wt% glass and 20-50 wt% 1% vehicle to obtain a good coating. Within these limits, it is necessary to use the smallest possible amount relative to solids Binder to reduce the amount of organic matter that must be removed by pyrolysis Get better particle fillers that reduce shrinkage during firing. The content of the organic medium is selected to provide casting, printing (such as screen printing or inkjet printing), molding, stencil printing, extrusion or spray coating , Brush coating, injection distribution coating, doctor blade coating, and the like and consistency and rheology. In the case of screen printing, the mesh size of the screen controls the thickness of the deposited material. In one embodiment, the silk The screen used in screen printing has a mesh size from 25 to 600; in one embodiment, the mesh size is from 50 to 500; in one embodiment, the mesh size is 200-350; in another embodiment The mesh size is from 200 to 275; and in another embodiment, the mesh size is from 275 to 350. For reference purposes, the mesh size may have a change line number that can change the film formed during the printing process. The larger the screen mesh number, the smaller the mesh size will cause the thinner the deposit. Based on the purpose of reference, the following table is provided about the mesh size of the screen. The two types of screen mesh size r are US Sieve Series and Tyler Equiva lent, the latter is sometimes referred to as Tyler Mesh Size or Tyler Standard Sieve Series. The mesh size of these grades is given in the table below, and it provides an indication of particle size. The net number system is based on every 97426 in the screen. doc -30- 200524461 A measure of how many openings a linear inch has. The difference between the US sieve size and the Tyler sieve size is that it is an arbitrary number. US Sieve Size Tyler Equivalent Opening 2V2 mesh mm 8.00 m 0.312 3 mesh 6.73 0.265 3V2 ^ 3V2 mesh 5.66 0.233 4 mesh 4 4.76 0.187 5 mesh 5 4.00 0.157 6 mesh 6 3.36 0.132 7 mesh 7 2.83 0.111 8 mesh 8 2.38 0.0937 10 mesh 9 2.00 0.0787 12 mesh 10 1.68 0.0661 14 mesh 12 1.41 0.0555 No. 16 14 mesh 1.19 0.0469 No. 18 16 mesh 1.00 0.0394 20 No. 20 mesh 0.841 0.0331 25 No. 24 mesh 0.707 0.0278 30 No. 28 mesh 0.595 0.0234 35 No. 32 mesh 0.500 0.0197 40 No. 35 mesh 0.420 0.0165 45 No. 42 mesh 0.354 0.0139 No. 50 48 mesh 0.297 0.0117 No. 60 60 mesh 0.250 0.0098 No. 70 65 mesh 0.210 0.0083 No. 80 80 mesh 0.177 0.0 070 100 No. 100 mesh 0.149 0.0059 120 No. 115 mesh 0.125 0.0049 140 No. 150 mesh 0.105 0.0041 170 No. 170 mesh 0.088 0.0035 200 No. 200 mesh 0.074 0.0029 230 No. 250 mesh 0.063 0.0025 270 No. 270 mesh 0.053 0.0021 325 No. 325 mesh 0.044 0.0017 400 No. 400 mesh 0.037 0.0015 Note: The source of the table is AZoM.com. 97426.doc -31-200524461 The deposited frit composition is dried to remove and cure the volatile organic medium. Curing can be performed by any conventional means. In one embodiment, the composition is heated in an oven at about 100-120 C, but the temperature may vary depending on the softening point of the glass used and the type of getter material (if used). Alternatively, other techniques may be used to heat the frit without substantially heating the barrier sheet. Then, if necessary, the cured material is densified. For example, densification may be performed by any conventional means and may be completed as part of a heating cycle immediately after curing heating, or may be achieved by two or more separate heating cycles with or between the heating cycles. No degree of cooling. In some embodiments, the frit composition is densified when heated at 400-650 ° C in a standard thick film conveyor furnace having a stylized heating cycle to form a fired product: or in a box furnace. When glass is used to make the barrier structure, the final thickness of the barrier structure formed from the frit composition can be determined by the deposition method, the glass content in the composition, and

在-實施例中,障壁材料為金屬。幾乎所有的金屬都具 有必需的對氣體及濕氣之低滲透性率。 屬,只要其對大氣穩定且黏附至障壁片 金屬係選自週期表之3-13族。在此完全 。於是可使用任何金 至障壁片。在一實施例中 其中週期表中之各族係 在此完全使用IUPAC編號系In an embodiment, the barrier material is metal. Almost all metals have the necessary low permeability to gases and moisture. As long as it is stable to the atmosphere and adheres to the barrier sheet, the metal is selected from Groups 3-13 of the Periodic Table. Completely here. Any gold-to-barrier sheet can then be used. In one embodiment, the pedigrees in the periodic table use the IUPAC numbering system here.

自左至右編為1-18(CRC 97426.doc -32- 200524461Coded from left to right as 1-18 (CRC 97426.doc -32- 200524461

Handbook of Chemistry and Physics 第 81 版,2000年)。在一 實知例中’金屬係選自Al、Zn、In、Sn、Cr、Ni及其組合。 金屬可藉由任何習知沉積技術來施加。在一實施例中, 金屬係藉由氣相沉積經由遮罩來施加。在一實施例中,金 屬係藉由濺鍍來施加。 障壁材料可施加成一層,或其可施加成多於一層以達成 所要厚度及幾何圖形。例如,玻料組合物可藉由相繼絲網 印刷步驟施加在多層中。不同層中之組合物可相同或不同。 在一實施例中,障壁結構係藉由使用以無中斷之連續方 式所施加的合適障壁材料製成。在另一實施例中,藉由改 變其在障蔽片之表面上的位置’可製作另—障壁結構,且 若需要,此多重結構可視情況在障壁結構圖案中具有中斷 (即,在裝置之整個活性區域周圍不是一連續特徵)。 儘管周界為三維,但其在障蔽片之主要表面的外部部分 周圍呈現為材料線’或可置放成僅在裝置之活性區域之周 界的周圍。其不具有間隙或開口,且其界定將被密封至電 子裝置之基板的障壁片區域。在一實施例中,將封裝裝配 組態成使得當密封裝置時障壁結構不與裝置之基板直接接 觸。 在〇-實施例中,障壁片包含玻璃。多數玻璃具有小於約 l〇-1〇g/m2/24hr/atm的滲透率。在—實施例中,玻璃係選自 硼矽酸鹽及鹼石灰玻璃。在一實施例中,障壁片大體上平 坦。在一實施例中,障壁片具有一大體上平坦之外部邊緣, 且具有成形内部。在一實施例中,障壁片為矩形。在一實 97426.doc •33- 200524461 知例中’障壁片具有在〇· 1 mm至5.0 mm範圍内之厚度。 在一實施例中,如圖1所示,如同窗框一樣,周界2具有 圍繞障壁片1之外部邊緣的矩形形狀。在一實施例中,障壁 材料之周界具有圓形形狀。在一實施例中,障壁材料之周 界具有調適成與電子裝置之特定基板互補的不規則的形 狀。 障壁結構本身可具有不同的幾何形狀。邊緣可為直線、Handbook of Chemistry and Physics, 81st edition, 2000). In a known example, the 'metal system is selected from Al, Zn, In, Sn, Cr, Ni, and combinations thereof. The metal can be applied by any conventional deposition technique. In one embodiment, the metal is applied by vapor deposition through a mask. In one embodiment, the metal is applied by sputtering. The barrier material may be applied in one layer, or it may be applied in more than one layer to achieve the desired thickness and geometry. For example, the frit composition can be applied in multiple layers by successive screen printing steps. The composition in different layers may be the same or different. In one embodiment, the barrier structure is made by using a suitable barrier material applied in an uninterrupted continuous manner. In another embodiment, another barrier structure can be made by changing its position on the surface of the barrier sheet, and if desired, this multiple structure may have interruptions in the barrier structure pattern as appropriate (i.e., throughout the device (Not a continuous feature around the active area). Although the perimeter is three-dimensional, it appears as a line of material 'around the outer portion of the major surface of the barrier sheet or can be placed only around the perimeter of the active area of the device. It has no gaps or openings, and it defines a barrier sheet region to be sealed to the substrate of the electronic device. In one embodiment, the package assembly is configured such that the barrier structure does not directly contact the substrate of the device when the device is sealed. In the O-Example, the barrier sheet comprises glass. Most glasses have a permeability of less than about 10-10 g / m2 / 24hr / atm. In the embodiment, the glass is selected from borosilicate and soda-lime glass. In one embodiment, the barrier sheet is substantially flat. In one embodiment, the barrier sheet has a generally flat outer edge and a shaped interior. In one embodiment, the barrier ribs are rectangular. In the example 97426.doc • 33-200524461, the 'barrier sheet has a thickness in the range of 0.1 mm to 5.0 mm. In one embodiment, as shown in FIG. 1, the perimeter 2 has a rectangular shape surrounding the outer edge of the barrier sheet 1, like a window frame. In one embodiment, the perimeter of the barrier material has a circular shape. In one embodiment, the perimeter of the barrier material has an irregular shape adapted to be complementary to a particular substrate of the electronic device. The barrier structure itself may have different geometries. The edges can be straight,

漸縮型或曲線。頂部可為平坦或成斜面。在一實施例中, 將障壁結構之頂部的幾何圖形設計成與其在基板之相關區 中之互補物嚙合。例如,其可在舌狀物及槽配置中接合。 I1早壁結構可具有任何將提供保護以免受污染物(諸如氫 氣及氧氣以及濕氣)的寬度及厚度,且可具有待使用封裝裝 配之#置或其它應用的要求。在一實施例中,障壁結構具 有在10至5000微米範圍内之寬度及在5至5〇〇微米範圍内之 厚度。在一實施例中,障壁結構為約7微米厚。在一實施例 中,障壁結構具有在5〇〇至2〇〇〇微米範圍内之寬度及在Μ 至100微米乾圍内之厚度。此厚度可經由使用一個以上結構 而達成。 在一實施例中,施加障壁結構材料之兩個或兩個以上 續沉積圖案(例如,在裝置之活性區域周界之周圍)以在障 片上形成兩個或兩個以上結構。用於製作該等結構的材 可相同或不同’且該等結構之形狀及尺寸可相同或不同 在-實施例中,來自障壁片之結構係由相同 具有相同形狀。 97426.doc -34· 200524461 為了使用封裝裝配,將至少-黏著劑施加至該(等)障壁 結構、障壁片、電子裝置之基板或其任何組合。若將黏著 劑僅施加至電子裝置之基板,則其必須以使得基板及障壁 片可耦合在一起之方式進行沉積。在一實施例中,將黏著 劑施加至障壁結構之底部及外部邊緣。在另一實施例中, 將黏著劑施加至電子裝置之基板。藉由考慮黏著劑是否將 障壁結構黏附至裝置基板來選擇黏著劑,或者若障壁結構 位於裝置基板上,則黏著劑必須將障壁結構黏結至障壁片。 可明瞭某些實施例之優勢。即,儘管使用經適當設計的 p章壁結構,但亦可使用比否則必需的黏著劑更少量的黏著 劑。另外,由於與黏著劑污染物滲透相關之區域較小,所 以可自大量黏著劑組合物選擇一或多種黏著劑。 在一實施例中,當使用玻璃障壁結構時,黏著劑係UV可 固化之環氧。此等材料已為吾人熟知,且普遍可購得。亦 可使用其它黏著劑材料,只要其具有足夠的黏著力及機械 強度。 在一實施例中,提供一種具有障壁片之電子裝置,其申 障壁結構封裝裝配係藉由將合適黏著劑施加至該電子裝置 之基板而黏附至該電子裝置。基板之其它特性主要由電子 裝置之要求控制。例如,對於有機發光二極體顯示裝置而 言,基板通常為透明以使得其可透射所產生的光。基板可 由剛性或可撓性之材料製成,例如,該等材料包括玻璃、 陶瓷、金屬、聚合物薄膜及其組合。在一實施例中,基板 包含玻璃。在一實施例中,基板具可撓性。在一實施例中, 97426.doc -35- 200524461 基板包含聚合物薄臈。 在一實紅例中,為了使用,將封裝裝配置於電子裝置之 基板上方。該裝配步驟可在正常周圍條件中完成,或可在 受控條件下元成,包括其所施加至之電子裝置所需要或要 求之減壓或惰性氣氛。 在一實施例中,障壁片亦具有施加至其之吸氣劑材料。 在一實施例中,將吸氣劑材料沉積於障壁片之表面上以使 得當裝置之裝配完成時該吸氣劑材料位於障壁結構與裝置 之活性區域之間。視需要,可沉積選用的額外位置之吸氣 劑材料。 吸氣劑材料可為粉、丸粒、圓片或薄膜之形式。在一實 施例中,將吸氣劑材料施加至障壁片以作為厚的薄膜糊狀 物組合物之部分,如同在申請中之美國申請案第1〇/71267〇 號及美國臨時案第60/5 19139號中所揭示。在一實施例中, 將至少一部分吸氣劑材料沉積在裝置活性區域之外面以使 得當封裝裝配與裝置一起使用時在裝置之活性區域上方形 成空腔。 在吸氣劑材料係沉積於障壁片上之實施例中,吸氣劑材 料可在獨立於封裝裝配本身之製造的步驟中且在將封裝裝 配施加至裝置之前視情況經活化。因此,封裝裝配可在普 通儲存條件下儲存很長一段時間,因為吸氣劑材料可在封 裝裝配用於製造裝置時的稍後時間活化。在此等實施例 中,一旦活化吸氣劑材料,則封裝裝配可保持在受控環境 中’且以此方式使得吸氣劑材料之效能能力不會過早地消 97426.doc -36- 200524461 耗。 在一實施例中,藉由使用圖28所示之封裝裝配來封裝有 機發光二極體顯示裝置,已觀察到改良之裝置壽命。 實例 以下實例說明使用玻璃作為結構材料施加至玻璃障壁片 以用作有機發光二極體顯示器之封裝裝配。 實例1-3 表1中展示了已發現適合作為新方法中之障壁材料的一 系列矽酸鹽玻璃組合物。所有玻璃均係藉由混合原材料然 後在1100-1400°C之鉑坩堝中熔融而製得。攪拌所得熔融 物,且藉由將其傾倒於逆向旋轉不銹鋼捲筒之表面上或傾 倒入水箱中來進行淬火。在調配成為糊狀物之前藉由使用 氧化鋁球介質濕磨或乾磨來將製備用於本發明之玻璃粉末 調整至2_5微米的平均尺寸。在熱空氣烘箱中乾燥研磨後之 濕裝料’且藉由篩選方法進行解聚結。 參 表1 玻璃組成之重量百分比 實例#sT〇2 1 2 3Taper or curve. The top can be flat or beveled. In one embodiment, the geometry of the top of the barrier structure is designed to mesh with its complement in the relevant area of the substrate. For example, they can engage in tongue and groove configurations. The I1 early wall structure may have any width and thickness that will provide protection from contaminants such as hydrogen and oxygen, and moisture, and may have requirements for packaging or other applications to be used with the packaging assembly. In one embodiment, the barrier structure has a width in the range of 10 to 5000 microns and a thickness in the range of 5 to 500 microns. In one embodiment, the barrier structure is about 7 microns thick. In one embodiment, the barrier structure has a width in the range of 5000 to 2000 microns and a thickness in the dry range of M to 100 microns. This thickness can be achieved by using more than one structure. In one embodiment, two or more successive deposition patterns are applied to the barrier structure material (e.g., around the perimeter of the active area of the device) to form two or more structures on the barrier. The materials used to make these structures may be the same or different ' and the shapes and sizes of the structures may be the same or different. In the embodiment, the structures from the barrier sheet are the same and have the same shape. 97426.doc -34 · 200524461 In order to use package assembly, at least-adhesive is applied to the barrier structure, barrier sheet, substrate of electronic device, or any combination thereof. If the adhesive is applied only to the substrate of the electronic device, it must be deposited in such a manner that the substrate and the barrier sheet can be coupled together. In one embodiment, an adhesive is applied to the bottom and outer edges of the barrier structure. In another embodiment, an adhesive is applied to a substrate of an electronic device. The adhesive is selected by considering whether the adhesive adheres the barrier structure to the device substrate, or if the barrier structure is located on the device substrate, the adhesive must adhere the barrier structure to the barrier sheet. The advantages of certain embodiments are apparent. That is, although a properly designed p-chapter wall structure is used, a smaller amount of adhesive can be used than otherwise necessary. In addition, because the area associated with penetration of the adhesive contaminants is small, one or more adhesives can be selected from a large number of adhesive compositions. In one embodiment, when a glass barrier structure is used, the adhesive is a UV-curable epoxy. These materials are well known to me and generally available. Other adhesive materials can also be used as long as they have sufficient adhesion and mechanical strength. In one embodiment, an electronic device with a barrier sheet is provided, and the barrier structure packaging assembly is applied to the electronic device by applying a suitable adhesive to a substrate of the electronic device. Other characteristics of the substrate are mainly controlled by the requirements of the electronic device. For example, for an organic light emitting diode display device, the substrate is usually transparent so that it can transmit the generated light. The substrate can be made of rigid or flexible materials, such as glass, ceramic, metal, polymer films, and combinations thereof. In one embodiment, the substrate comprises glass. In one embodiment, the substrate is flexible. In one embodiment, the substrate 97426.doc -35- 200524461 includes a thin polymer. In a real example, the package is mounted on a substrate of an electronic device for use. This assembly step can be completed in normal ambient conditions, or it can be formed under controlled conditions, including the reduced pressure or inert atmosphere required or required by the electronic device to which it is applied. In one embodiment, the barrier sheet also has a getter material applied thereto. In one embodiment, a getter material is deposited on the surface of the barrier sheet so that when the device is assembled, the getter material is located between the barrier structure and the active area of the device. If necessary, a getter material of an optional extra position can be deposited. The getter material can be in the form of powder, pellets, discs, or films. In one embodiment, a getter material is applied to the baffle sheet as part of a thick film paste composition, as in U.S. Application No. 10 / 71267〇 and U.S. Provisional No. 60 / 5 disclosed in No. 19139. In one embodiment, at least a portion of the getter material is deposited on the outside of the active area of the device so that when the package assembly is used with the device, a square cavity is formed on the active area of the device. In embodiments where the getter material is deposited on the barrier sheet, the getter material may be activated in a separate step from the packaging assembly itself and optionally before applying the packaging assembly to the device. Therefore, the package assembly can be stored for a long time under ordinary storage conditions, because the getter material can be activated at a later time when the package assembly is used to manufacture the device. In these embodiments, once the getter material is activated, the packaging assembly can be maintained in a controlled environment 'and in this way the effectiveness of the getter material will not prematurely disappear. 97426.doc -36- 200524461 Consuming. In one embodiment, by using the package assembly shown in FIG. 28 to package an organic light emitting diode display device, an improved device life has been observed. Examples The following examples illustrate the use of glass as a structural material applied to a glass barrier sheet for packaging assembly of an organic light emitting diode display. Examples 1-3 Table 1 shows a series of silicate glass compositions that have been found suitable as barrier materials in the new method. All glasses are made by mixing raw materials and melting them in a platinum crucible at 1100-1400 ° C. The resulting melt is stirred and quenched by pouring it onto the surface of a counter-rotating stainless steel drum or pouring it into a water tank. The glass powder prepared for use in the present invention is adjusted to an average size of 2 to 5 microns by wet grinding or dry grinding using an alumina ball medium before being formulated into a paste. The milled wet charge was dried in a hot air oven and deagglomerated by a screening method. See Table 1 Weight percentage of glass composition Example # sT〇2 1 2 3

AI2O3 Bi2〇3 Β2〇3 CaO ZnO PbO 7.1 2.1 69.8 8.4 0.5 12.0 15.82.6 81.6 14.81 0.82 11.83 6.58 65.96 實例4-6 玻料組合物係藉由基於Texanol®溶劑(由Eastman 97426.doc -37- 200524461AI2O3 Bi2〇3 Β2〇3 CaO ZnO PbO 7.1 2.1 69.8 8.4 0.5 12.0 15.82.6 81.6 14.81 0.82 11.83 6.58 65.96 Example 4-6 The glass composition was based on a Texanol® solvent (Eastman 97426.doc -37- 200524461

Chemical Co.出售的酯醇(2,2,4_三甲基],3·戊二醇單異丁 酸酉曰))與乙基纖維素樹脂之混合物混合玻璃與有機介質而 製得。表2闡釋了組合物之實例。可利用改變溶劑含量來調 整不同沉積方法之糊狀物黏度及薄膜厚度。 使用200目篩網將玻料組合物印刷於基於鹼石灰矽酸鹽 之玻璃片上,在12〇。(:下乾燥以蒸發溶劑,然後在箱式爐中 於450 550C之峰值溫度下燒製1-2小時,以在玻璃片上形成 玻璃結構。亦使用具有3-6小時加熱/冷卻分佈之傳送爐在 550°c下處理一些樣本1小時。重複印刷/燒製步驟以在需要 時產生更厚的結構。視糊狀物黏度及篩網網目尺寸而定, 單一印刷之玻璃結構的燒製厚度在1〇微米至25微米的範圍 内0 所印刷之玻料組合物燒成緻密,且展示出與破璃片之良 好的黏附。在燒製結構之表面上未觀察到龜裂或起泡。不 論糊狀物組成如何,燒製後之障壁結構的厚度均一性均保 持在+Λ2微米内。 -”A mixture of ester alcohol (2,2,4-trimethyl], 3.pentanediol monoisobutyrate) sold by Chemical Co. and ethyl cellulose resin is prepared by mixing glass with an organic medium. Table 2 illustrates examples of the composition. The solvent content can be used to adjust the paste viscosity and film thickness of different deposition methods. The frit composition was printed on a soda lime silicate-based glass sheet using a 200 mesh screen at 120. (: Drying to evaporate the solvent, and then firing in a box furnace at a peak temperature of 450 550C for 1-2 hours to form a glass structure on the glass sheet. A transfer furnace with a heating / cooling distribution of 3-6 hours is also used Process some samples at 550 ° C for 1 hour. Repeat printing / firing steps to produce a thicker structure when needed. Depending on paste viscosity and screen mesh size, the firing thickness of a single printed glass structure is between In the range of 10 microns to 25 microns 0 The printed frit composition is densely fired and exhibits good adhesion to glass flakes. No cracks or blistering is observed on the surface of the fired structure. Regardless Regarding the composition of the paste, the thickness uniformity of the barrier structure after firing is maintained within + Λ2 microns.-"

實例7 在此實例中,使用鋇金屬塗層來模擬電子裝 ^ 、夏 < 濕氣 97426.doc -38- 200524461 空氣敏感性。 將300埃厚之鋇塗層沉積至〇·7 111111厚之玻璃基板上。使用 由表1中之#1玻璃製成之玻料障壁結構(1 mm寬乘以8〇微米 厚)封裝該基板,且將其燒製於〇·7 mm厚之玻璃片上以作為 障壁片。使用UV可固化環氧接合該等兩個片。製備類似實 例但無玻料障壁結構。視覺觀察顯示,由玻璃障壁結構製 成之樣品比無玻璃障壁結構之樣品更好地保護鋇薄膜以使 其免X空氣中之水分及氧。藉由量測相鄰電極之間3〇〇埃鋇 薄膜的電阻並繪製其作為該等包裝經受6〇 DegC/90%尺只環 境的時間函數的曲線圖來量化視覺觀察。經由環氧密封滲 入包裝之水分將與鋇塗層發生化學反應,從而產生不同的 薄膜電阻。如附圖29所見。該資訊說明,吸氣劑材料的使 用視情況而定。 【圖式簡單說明】 圖1包括一電子裝置之平面圖。 圖2包括沿圖1中之線2_2所截取的電子裝置之橫截面圖。 圖3包括圖1及圖2所示之電子裝置的另一橫截面圖。 圖4包括圖1至圖3所示之電子裝置的另一橫截面圖。 圖5包括按圖4中之圓5所截取的電子裝置之詳細橫截面 圖。 圖6包括第一替代實施例之電子裝置的橫截面圖。 圖7包括第一替代實施例之電子裝置的另一橫截面圖。 圖8包括第二替代實施例之電子裝置的橫截面圖。 圖9包括第三替代實施例之電子裝置的橫截面圖。 97426.doc -39- 200524461 圖ι〇包括第四替代實施例之電子裝置的橫截面圖。 圖11包括圖10所示之電子裝置之第四替代實施例的另一 橫截面圖。 圖12包括第五替代實施例之電子裝置的橫截面圖。 圖13包括第六替代實施例之電子裝置的橫截面圖。 圖14包括第七替代實施例之電子裝置的橫截面圖。 圖15包括第八替代實施例之電子裝置的橫截面圖。 圖16包括第九替代實施例之電子裝置的橫截面圖。 圖17包括第十替代實施例之電子裝置的橫截面圖。 圖18包括第十一替代實施例之電子裝置的橫截面圖。 圖19包括第十二替代實施例之電子裝置的橫截面圖。 圖20包括第十三替代實施例之電子裝置的橫截面圖。 圖21包括圖20所示之電子裝置之第十三替代實施例的另 一橫截面圖。 圖22包括第十四替代實施例之電子裝置的橫截面圖。 圖23包括第十五替代實施例之電子裝置的橫截面圖。 圖24包括一第十六替代實施例之電子裝置的橫截面圖。 圖25包括第十七替代實施例之電子裝置的橫截面圖。 圖26包括第十八替代實施例之電子裝置的橫截面圖。 圖27包括一封裝裝配之平面圖。 圖28包括第十九替代實施例之電子裝置的橫截面圖。 圖29係說明使用各種封裝技術消耗鋇薄膜之速率的圖 表。 【主要元件符號說明】 97426.doc -40- 200524461 2 500 , 1000 , 1200 , 1300 , 1400 , 1600 , 1700 , 1800 , 1900 , 2000 , 2100 , 2200 , 2300 , 2400 , 2600 , 2700 , 2800 , 2900 , 3000 510 , 1010 , 1210 , 1310 , 1410 , 3104 , 3106 , 4104 512 , 1016 , 3102 , 4102 514 , 1018 , 3108 , 3110 , 3112 , 3114 , 4108 502 , 1002 , 1202 , 1302 , 1402 , 1602 , 1702 , 1808 , 1904 , 2008 , 2104 , 2208 , 2304 , 2408 , 2608 , 2708 , 2808 , 2908 , 3008 504 , 1004 , 1204 , 1304 , 1404 , 1604 , 1704 506 , 1006 , 1206 , 1306 , 1406 , 1606 , 1708 , 1804 , 1908 , 2004 , 2108 , 2204 , 2308 , 2404 , 2604 , 2704 , 2804 , 2904 , 3004 , 3100 , 4100 周界 電子裝置 障壁結構 内部區域 吸氣劑材料層 基板 電活性區域 封裝裝配 97426.doc -41 - 200524461 508 518 516 , 520 , 1412 1012 , 1212 , 1312 1008 , 1208 , 1308 , 1408 , 1608 , 1710 1610 , 1612 1706 , 1802 , 1902 , 2002 , 2102 , 2202 , 2302 , 2602 , 2606 , 2802 , 2806 , 3002 , 3006 1806 , 1906 , 2006 , 2106 , 2206 , 2306 2402 , 2702 , 2902 2406 , 2706 , 2906 4122 4120 1014 障壁片/表面 障壁 黏著劑 發熱元件 表面 咬合障壁結構 哺合肋條 喃合槽 第一大體上連續之嚙合肋條 第二大體上連續之嚙合肋條 裝置 活性區域 源 97426.doc -42-Example 7 In this example, a barium metal coating was used to simulate electronic devices ^, summer < moisture 97426.doc -38- 200524461 air sensitivity. A 300 Angstrom thick barium coating was deposited on a 0.77 111111 glass substrate. The substrate was packaged with a glass barrier structure (1 mm wide by 80 microns thick) made of # 1 glass in Table 1, and fired on a 0.7 mm thick glass sheet as a barrier sheet. The two sheets were joined using a UV curable epoxy. A similar example was prepared with no frit barrier structure. Visual observations show that samples made of glass barrier structures protect the barium film better from moisture and oxygen in the air than samples without glass barrier structures. Visual observation was quantified by measuring the resistance of a 300 angstrom barium film between adjacent electrodes and plotting it as a function of time when the packages were subjected to a 60 DegC / 90% ruler environment. The moisture that penetrates into the package through the epoxy seal will chemically react with the barium coating, resulting in different sheet resistances. See Figure 29. The information states that the use of getter materials is subject to availability. [Brief Description of the Drawings] FIG. 1 includes a plan view of an electronic device. FIG. 2 includes a cross-sectional view of the electronic device taken along a line 2_2 in FIG. 1. FIG. 3 includes another cross-sectional view of the electronic device shown in FIGS. 1 and 2. FIG. 4 includes another cross-sectional view of the electronic device shown in FIGS. 1 to 3. FIG. 5 includes a detailed cross-sectional view of the electronic device taken along a circle 5 in FIG. 4. FIG. FIG. 6 includes a cross-sectional view of the electronic device of the first alternative embodiment. FIG. 7 includes another cross-sectional view of the electronic device of the first alternative embodiment. FIG. 8 includes a cross-sectional view of an electronic device of a second alternative embodiment. FIG. 9 includes a cross-sectional view of an electronic device according to a third alternative embodiment. 97426.doc -39- 200524461 FIG. 10 includes a cross-sectional view of an electronic device of a fourth alternative embodiment. FIG. 11 includes another cross-sectional view of the fourth alternative embodiment of the electronic device shown in FIG. FIG. 12 includes a cross-sectional view of an electronic device according to a fifth alternative embodiment. FIG. 13 includes a cross-sectional view of an electronic device according to a sixth alternative embodiment. FIG. 14 includes a cross-sectional view of an electronic device according to a seventh alternative embodiment. FIG. 15 includes a cross-sectional view of an electronic device of an eighth alternative embodiment. FIG. 16 includes a cross-sectional view of an electronic device according to a ninth alternative embodiment. FIG. 17 includes a cross-sectional view of an electronic device of a tenth alternative embodiment. FIG. 18 includes a cross-sectional view of an electronic device according to an eleventh alternative embodiment. FIG. 19 includes a cross-sectional view of an electronic device of a twelfth alternative embodiment. FIG. 20 includes a cross-sectional view of an electronic device according to a thirteenth alternative embodiment. FIG. 21 includes another cross-sectional view of the thirteenth alternative embodiment of the electronic device shown in FIG. 20. FIG. FIG. 22 includes a cross-sectional view of an electronic device of a fourteenth alternative embodiment. FIG. 23 includes a cross-sectional view of an electronic device of a fifteenth alternative embodiment. FIG. 24 includes a cross-sectional view of an electronic device of a sixteenth alternative embodiment. FIG. 25 includes a cross-sectional view of an electronic device of a seventeenth alternative embodiment. FIG. 26 includes a cross-sectional view of an electronic device of an eighteenth alternative embodiment. Figure 27 includes a plan view of a package assembly. FIG. 28 includes a cross-sectional view of an electronic device of a nineteenth alternative embodiment. Figure 29 is a graph illustrating the rate at which barium films are consumed using various packaging techniques. [Description of main component symbols] 97426.doc -40- 200524461 2 500, 1000, 1200, 1300, 1400, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2600, 2700, 2800, 2900, 2900, 3000 510, 1010, 1210, 1310, 1410, 3104, 3106, 4104 512, 1016, 3102, 4102 514, 1018, 3108, 3110, 3112, 3114, 4108 502, 1002, 1202, 1302, 1402, 1602, 1702 1808, 1904, 2008, 2104, 2208, 2304, 2408, 2608, 2708, 2808, 2908, 3008 504, 1004, 1204, 1304, 1404, 1604, 1704 506, 1006, 1206, 1306, 1406, 1606, 1708, 1708 1804, 1908, 2004, 2108, 2204, 2308, 2404, 2604, 2704, 2804, 2904, 3004, 3100, 4100 Perimeter electronic device barrier structure inner area getter material layer substrate electroactive area package assembly and assembly 97426.doc- 41-200524461 508 518 516, 520, 1412 1012, 1212, 1312 1008, 1208, 1308, 1408 1608, 1710 1610, 1612 1706, 1802, 1902, 2002, 2102, 2202, 2302, 2602, 2606, 2802, 2806, 3002, 3006 1806, 1906, 2006, 2106, 2206, 2306 2402, 2702, 2902 2706, 2706, 2706 2906 4122 4120 1014 Barrier sheet / surface barrier adhesive heating element surface bite barrier structure feeding rib grooving groove first substantially continuous meshing rib second substantially continuous meshing rib device active area source 97426.doc -42-

Claims (1)

200524461 十、申請專利範園: 1. 一種用於一電子裝置之封裝裝配,該電子裝置具有一基 板及一活性區域,該封裝裝配包含: 一障壁片,·及 一自該片延伸之障壁結構,其中·· 该障壁結構係組態成使得當在一電子裝置上與一黏 著劑結合用於將該封裝裝配黏結至該裝置基板時,大體 上乳密封該電子裝置;且其中該障壁結構未融合至該裝 置基板。 2·如請求項1之封裝裝配,其中該障壁結構包含一選自由以 下各物組成之群的障壁材料··玻璃、陶瓷、金屬性材料 或其組合。 3·如凊求項1之封裝裝配,其進一步包含一吸氣劑材料,該 吸氣劑材料係沉積於該障壁片上,且係組態成使得當將 該裝置黏結至該封裝裝配時位於該裝置活性區域之外 部,而仍曝露至該裳置活性區域。 4. -種用於一電子裝置之封裝裝配,該電子裝置具有一基 板及一活性區域,該基板進一步具有一密封結構,該封 裝裝配包含: 一具有一大體上平坦之表面的障壁片;及 一自該平坦表面延伸之障壁結構,其中: 該障壁結構係組態成使得當在一電子裝置上使用時 大體上氣密封該電子裝置;且其中該障壁結構係組態成 與該裝置基板上之該密封結構嚙合。 97426.doc 200524461 5. 如請求項4之裝配,其進一步包含一吸氣劑材料,該吸氣 劑材料係沉積於該障壁片上,结態成使得當將該裝置 黏結至該封裝裝配時位於該裝置活性區域之外部,即仍 曝露至該裝置活性區域。 6. 如請求項4之裝配,其中將該障壁結構係組態成與該裝置 基板上之該密封結構大體上直接接觸。 7. 如請求項1或4之裝配,其進一纟包含一黏著至該障壁結 構之黏著劑,且該黏著劑以一足以將該裝配黏結至該裝 置的里彡儿積於一位置。 8_ —種用於一電子裝置之封裝裝配,其包含一具有一大體 上平坦之表面的障壁片及一密封結構,且其中該密封結 構係組態成與該電子裝置之該基板上的一障壁結構嚙 合0 9·如請求項1或4之裝配,其中該障壁結構包含玻璃材料。 10· —種用於一具有一基板之電子裝置的密封,該密封包含·· 一障壁結構;及 一與該障壁結構接觸之發熱元件。 11·如請求項10之密封,其中該發熱元件設置於一與該障壁 結構並置之封裝裝配的一表面上,且其中在使得該發熱 疋件加熱該障壁結構後融合該障壁結構,以在該封袭裝 配與X»亥裝置基板之間形成一氣密封之至少一部分。 12·如明求項丨丨之密封,其中在加熱後,該發熱元件將該障 壁結構融合至該封裝裝配及該裝置基板。 13·種用於一有機電子裝置之封裝裝配,包含: 97426.doc -2 - 200524461 -尺寸化成覆蓋-有機電子裝置之—電活性區域 壁片;及 一第一咬合結構,其中: 该第一咬合結構係組態成黏附至一基板之一第二咬 合結構; X 該第二咬合結構係該第一咬合結構之一互補物;且 該第-及該第二咬合結構之—組合能夠形成一氣密 封之至少部分。 14. 15. 16. 17. 18. 如請求項U之封裝裝配,其中該封裝裝配為透明。 如請求項14之封裝裝配,其中該第—咬合結構之形狀大 體上為半圓形形狀、三角形形狀、矩形形狀或截錐體形 狀。 如請求項15之封裝裝配,其中該第—咬合結構包含一大 體上連續之嚙合肋條。 如請求項16之封裝裝配,其進—步包含—吸氣劑材料, 其中該吸氣劑材料係沿該表面設置,且組態成曝露至該 電子活性區域。 一種電子裝置,包含: -包含-有機電子裝置之一電活性區域之基板; -覆蓋該電活性區域之封裝裝配,其"亥封裝裝配包 含一面向該裝置基板之障壁表面;及 -包含-障壁材料之障壁結構,其中該障壁結構黏附 至及封4衣配之該障壁表面及該基板,其中該障壁結構 距離裝置基板不大於丨微米。 97426.doc 200524461 19·如請求項18之有機電子裝置,其進一步包含_接觸該障 壁結構及該裝置基板之黏著劑。 20. 如請求項19之有機電子裝置,其中該障壁材料包含玻 璃、陶兗、金屬或其組合。 21. 如請求項20之有機電子裝置,該封裝裝配進一步包含一 曝露至該電子活性區域之吸氣劑材料。 22· —種用於一電子裝置之封裝裝配,該電子裝置具有一美 板,該基板具有一自該基板延伸且在一活性區域之外面 的障壁結構,該封裝裝配包含: 一具有一大體上平坦之表面及一密封結構之障壁片; 且 , 其中該障壁片係組態成與該裝置基板上之該障壁結 嚙合。 23· —種電子裝置,包含如請求項22之封裝裝配。 24· —種用於在一基板上密封一電子裝置之方法,包含: 形成一包含一障壁片及一自該片延伸之障壁結構的封 裝裝配; ' 將黏著劑施加至該障壁結構及該基板中之至少一者; 及 , 將讜卩早壁結構黏結至該基板以使得該電子裝置由該封 裝裝配封閉。 25·如請求項24之方法,其中該障壁結構包含一選自玻螭、 陶瓷、金屬、金屬氧化物、金屬氮化物及其組合之氣密 材料。 97426.doc 200524461 26·如請求項25之方法,其中該障壁結構係由玻料組合物形 成。 27·如凊求項26之方法,其進一步包含固化及緻密化該玻料 組合物。 28.如請求項26之方法’其中該玻料組合物包含一玻璃粉 末,該玻璃粉末包含以下各物中之至少一物質:pb〇 ; Al2〇3 ; Si02 ; B203 ; Zno ; Bi2〇3 ; Na20 ; Li20 ; P2〇5 ; NaF及CdO;及M0,其中〇為氧,且M選自如、&、pb、 Ca、Zn、Cu、Mg及其混合。 29·種用;#有一基板及一活性區域之電子裝置的封裝 裝配,該封裝裝配包含: 一障壁片;及 一自該片之-表面延伸的障壁結#,該障壁結構進一 步包括—發熱元件’其中該障壁結構係組態成使得當在 一電子裝置上使用時大體上氣密封該電子裝置。 3〇·如請求項卜13或29之封裝裝配,其中該電子裝置係選 自.-發光二極體,—發光二極體顯示器,一雷射二極 體’一光偵測器,光導電池,光敏電阻,光控開關,光 電晶體’電化學顯示器,光電管,ΠΜ貞測器,光伏打裝 陽月b電/也光感應器,電晶體,場發射顯示器, 電漿顯示器’微電機系統,光子裝置、使用積體電路之 電子裝置、加速器、迴轉儀、運動感應器、或二極體。 97426.doc200524461 X. Patent application park: 1. A package assembly for an electronic device having a substrate and an active area. The package assembly includes: a barrier sheet, and a barrier structure extending from the sheet Wherein, the barrier structure is configured such that when an electronic device is combined with an adhesive for bonding the package assembly to the device substrate, the electronic device is substantially hermetically sealed; and wherein the barrier structure is not Fusion into the device substrate. 2. The package assembly of claim 1, wherein the barrier structure includes a barrier material selected from the group consisting of: glass, ceramics, metallic materials, or a combination thereof. 3. The package assembly of claim 1, further comprising a getter material, the getter material being deposited on the baffle sheet and configured to be located when the device is bonded to the package assembly The outside of the active area of the device is still exposed to the active area. 4. A package assembly for an electronic device having a substrate and an active area, the substrate further having a sealing structure, the package assembly including: a barrier sheet having a generally flat surface; and A barrier structure extending from the flat surface, wherein: the barrier structure is configured so as to substantially hermetically seal the electronic device when used on an electronic device; and wherein the barrier structure is configured to be on a substrate of the device. The sealing structure is engaged. 97426.doc 200524461 5. The assembly of claim 4, further comprising a getter material, the getter material being deposited on the baffle sheet in a state such that when the device is bonded to the package assembly, it is located in the The outside of the device active area, that is, still exposed to the device active area. 6. The assembly of claim 4, wherein the barrier structure is configured to be substantially directly in contact with the sealing structure on the device substrate. 7. The assembly of claim 1 or 4, further comprising an adhesive that adheres to the barrier structure, and the adhesive is stored in a position sufficient to adhere the assembly to the inside of the device. 8_ —A packaging assembly for an electronic device, comprising a barrier sheet having a substantially flat surface and a sealing structure, and wherein the sealing structure is configured to be a barrier on the substrate of the electronic device Structural engagement 0 9 · The assembly of claim 1 or 4, wherein the barrier structure comprises a glass material. 10. A seal for an electronic device having a substrate, the seal including ... a barrier structure; and a heating element in contact with the barrier structure. 11. The seal of claim 10, wherein the heating element is disposed on a surface of a packaging assembly juxtaposed with the barrier structure, and wherein the barrier structure is fused after the heating element heats the barrier structure, so that At least a part of an air-tight seal is formed between the seal assembly and the X »H device substrate. 12. Sealing as described in the above item, wherein the heating element fuses the barrier structure to the package assembly and the device substrate after heating. 13. Packaging and assembly for an organic electronic device, including: 97426.doc -2-200524461-Dimensional Covering-Organic Electronic Device-Electroactive Active Area Wall Sheet; and a first bite structure, wherein: the first The bite structure is configured to be adhered to a second bite structure of a substrate; X the second bite structure is a complement of the first bite structure; and the combination of the first and second bite structures can form a gas At least part of the seal. 14. 15. 16. 17. 18. The package assembly of claim U, wherein the package assembly is transparent. For example, the package assembly of claim 14, wherein the shape of the first bite structure is generally a semicircular shape, a triangular shape, a rectangular shape, or a truncated cone shape. As in the package assembly of claim 15, wherein the first bite structure includes a substantially continuous meshing rib. If the package assembly of claim 16 further comprises a getter material, the getter material is disposed along the surface and configured to be exposed to the electronically active area. An electronic device comprising:-a substrate including-an electroactive region of an organic electronic device;-a package assembly covering the electroactive region, whose " Hai package assembly includes a barrier surface facing the device substrate; and-includes- The barrier structure of the barrier material, wherein the barrier structure is adhered to and sealed to the barrier surface and the substrate, and the barrier structure is not more than 1 micron away from the device substrate. 97426.doc 200524461 19. The organic electronic device according to claim 18, further comprising an adhesive contacting the barrier structure and the device substrate. 20. The organic electronic device of claim 19, wherein the barrier material comprises glass, ceramic, metal, or a combination thereof. 21. The organic electronic device of claim 20, the package assembly further comprising a getter material exposed to the electronically active area. 22 · —Packaging assembly for an electronic device, the electronic device having a US board, the substrate having a barrier structure extending from the substrate and outside an active area, the package assembly includes: A flat surface and a barrier rib of a sealing structure; and wherein the barrier rib is configured to be engaged with the barrier rib on the device substrate. 23 · An electronic device including a package assembly as claimed in item 22. 24 · —A method for sealing an electronic device on a substrate, comprising: forming a package assembly including a barrier sheet and a barrier structure extending from the sheet; 'applying an adhesive to the barrier structure and the substrate At least one of: and, bonding an early wall structure to the substrate such that the electronic device is closed by the package assembly. 25. The method of claim 24, wherein the barrier structure comprises an airtight material selected from the group consisting of glass, ceramic, metal, metal oxide, metal nitride, and combinations thereof. 97426.doc 200524461 26. The method of claim 25, wherein the barrier structure is formed of a frit composition. 27. The method of claim 26, further comprising curing and densifying the frit composition. 28. The method of claim 26, wherein the frit composition comprises a glass powder comprising at least one of the following: pb0; Al2O3; Si02; B203; Zno; Bi2O3; Na20; Li20; P205; NaF and CdO; and M0, where 0 is oxygen, and M is selected from the group consisting of &, pb, Ca, Zn, Cu, Mg, and mixtures thereof. 29 · 种 用; # Package assembly of an electronic device with a substrate and an active area, the package assembly comprising: a barrier sheet; and a barrier junction # extending from the surface of the sheet, the barrier structure further comprising a heating element 'Wherein the barrier structure is configured such that the electronic device is substantially hermetically sealed when used on an electronic device. 30. If the package assembly of item 13 or 29 is requested, the electronic device is selected from the group consisting of a light-emitting diode, a light-emitting diode display, a laser diode, a light detector, and a light guide battery. Photoresistors, light-controlled switches, photovoltaic crystals 'electrochemical displays, photocells, UIM detectors, photovoltaic installations Yangyue b / photoelectric sensors, transistors, field emission displays, plasma displays' micro-motor systems, Photonic devices, electronic devices using integrated circuits, accelerators, gyroscopes, motion sensors, or diodes. 97426.doc
TW093134578A 2003-11-12 2004-11-12 Encapsulation assembly for electronic devices TWI365677B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51913903P 2003-11-12 2003-11-12
US61922204P 2004-10-15 2004-10-15

Publications (2)

Publication Number Publication Date
TW200524461A true TW200524461A (en) 2005-07-16
TWI365677B TWI365677B (en) 2012-06-01

Family

ID=34623092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093134578A TWI365677B (en) 2003-11-12 2004-11-12 Encapsulation assembly for electronic devices

Country Status (5)

Country Link
EP (1) EP1683209A2 (en)
JP (1) JP4980718B2 (en)
KR (1) KR20060113710A (en)
TW (1) TWI365677B (en)
WO (1) WO2005050751A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413444B (en) * 2009-03-24 2013-10-21 Samsung Display Co Ltd Organic light emitting display device
US9450202B2 (en) 2012-10-31 2016-09-20 Industrial Technology Research Institute Environmental sensitive electronic device package having side wall barrier structure
TWI581422B (en) * 2013-05-15 2017-05-01 財團法人工業技術研究院 Environmental sensitive electronic device package

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008545264A (en) * 2005-07-05 2008-12-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Packaged semiconductor sensor chip for use in liquids
DE102005053722B4 (en) * 2005-11-10 2007-08-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Cover wafer, in the microsystem technology usable component with such a wafer and soldering method for connecting corresponding component parts
KR100673765B1 (en) 2006-01-20 2007-01-24 삼성에스디아이 주식회사 Organic light-emitting display device and the preparing method of the same
US20070172971A1 (en) * 2006-01-20 2007-07-26 Eastman Kodak Company Desiccant sealing arrangement for OLED devices
KR100671647B1 (en) * 2006-01-26 2007-01-19 삼성에스디아이 주식회사 Organic light emitting display device
KR100732817B1 (en) * 2006-03-29 2007-06-27 삼성에스디아이 주식회사 Organic light-emitting display device and the preparing method of the same
DE102006016260A1 (en) 2006-04-06 2007-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Micromechanical housing with at least two cavities with different internal pressure and / or gas composition and method for their production
US7800303B2 (en) * 2006-11-07 2010-09-21 Corning Incorporated Seal for light emitting display device, method, and apparatus
KR20080051756A (en) * 2006-12-06 2008-06-11 삼성에스디아이 주식회사 Organic light emitting display apparatus and method of manufacturing thereof
TW200836580A (en) * 2007-02-28 2008-09-01 Corning Inc Seal for light emitting display device and method
TWI378592B (en) * 2007-09-04 2012-12-01 Iner Aec Executive Yuan Sealing material for solid oxide fuel cells
DE102007053849A1 (en) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Arrangement comprising an optoelectronic component
ITMI20071903A1 (en) * 2007-10-04 2009-04-05 Getters Spa METHOD FOR THE PRODUCTION OF SOLAR PANELS THROUGH THE USE OF A POLYMER TRISTRATE INCLUDING A COMPOSITE GETTER SYSTEM
EP2053026B1 (en) * 2007-10-26 2014-04-02 Institute of Nuclear Energy Research, Atomic Energy Council Sealing material for solid oxide fuel cells
KR100976457B1 (en) 2008-10-22 2010-08-17 삼성모바일디스플레이주식회사 Organic Electroluminescence Device And Method For Fabricating Of The Same
KR101180234B1 (en) * 2009-04-03 2012-09-05 (주)엘지하우시스 Building integrated photovoltaic module with design layer
US8440479B2 (en) * 2009-05-28 2013-05-14 Corning Incorporated Method for forming an organic light emitting diode device
JP5382119B2 (en) * 2009-06-24 2014-01-08 三菱化学株式会社 Organic electronic device and manufacturing method thereof
US8505337B2 (en) * 2009-07-17 2013-08-13 Corning Incorporated Methods for forming fritted cover sheets and glass packages comprising the same
JP5824809B2 (en) 2010-02-10 2015-12-02 日本電気硝子株式会社 Sealing material and sealing method using the same
KR101297375B1 (en) * 2011-09-05 2013-08-19 주식회사 에스에프에이 Chemical Vapor Deposition Apparatus for Flat Display
JP2014007198A (en) * 2012-06-21 2014-01-16 Kaneka Corp Crystal silicon-based photoelectric conversion device and manufacturing method of the same
US8926337B2 (en) * 2012-08-24 2015-01-06 Apple Inc. Method for improving connector enclosure adhesion
JP6192912B2 (en) * 2012-09-14 2017-09-06 株式会社カネカ Organic EL device
JP6192911B2 (en) * 2012-09-10 2017-09-06 株式会社カネカ Organic EL device and manufacturing method thereof
US8829507B2 (en) * 2012-12-06 2014-09-09 General Electric Company Sealed organic opto-electronic devices and related methods of manufacturing
JP6185304B2 (en) * 2013-06-28 2017-08-23 株式会社カネカ Crystalline silicon photoelectric conversion device and manufacturing method thereof
CN104030578B (en) * 2014-07-03 2016-08-17 王磊 Vacuum compound isolation fender member
CN107046104A (en) * 2017-01-10 2017-08-15 广东欧珀移动通信有限公司 OLED encapsulating structures and preparation method thereof
TWI750421B (en) * 2018-10-30 2021-12-21 立景光電股份有限公司 Display panel

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127740B (en) * 1982-09-30 1985-10-23 Burr Brown Res Corp Improved hermetic sealing process
JPS61136247A (en) * 1984-12-07 1986-06-24 Toshiba Corp Semiconductor device
US6426484B1 (en) * 1996-09-10 2002-07-30 Micron Technology, Inc. Circuit and method for heating an adhesive to package or rework a semiconductor die
JPH11121167A (en) * 1997-10-16 1999-04-30 Tdk Corp Organic electroluminescent element
JP2000040585A (en) * 1998-07-21 2000-02-08 Tdk Corp Organic el element module
US6255239B1 (en) * 1998-12-04 2001-07-03 Cerdec Corporation Lead-free alkali metal-free glass compositions
JP2001057287A (en) * 1999-08-20 2001-02-27 Tdk Corp Organic el element
US6333460B1 (en) * 2000-04-14 2001-12-25 International Business Machines Corporation Structural support for direct lid attach
JP2002299043A (en) * 2001-03-30 2002-10-11 Sanyo Electric Co Ltd Sealing structure of organic electroluminescence display
US20040169174A1 (en) * 2001-05-24 2004-09-02 Huh Jin Woo Container for encapsulating oled and manufacturing method thereof
US6933537B2 (en) * 2001-09-28 2005-08-23 Osram Opto Semiconductors Gmbh Sealing for OLED devices
JP3942017B2 (en) * 2002-03-25 2007-07-11 富士フイルム株式会社 Light emitting element
JP2005086032A (en) * 2003-09-09 2005-03-31 Kyocera Corp Vessel for accommodating piezoelectric vibrator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413444B (en) * 2009-03-24 2013-10-21 Samsung Display Co Ltd Organic light emitting display device
US9450202B2 (en) 2012-10-31 2016-09-20 Industrial Technology Research Institute Environmental sensitive electronic device package having side wall barrier structure
TWI581422B (en) * 2013-05-15 2017-05-01 財團法人工業技術研究院 Environmental sensitive electronic device package

Also Published As

Publication number Publication date
TWI365677B (en) 2012-06-01
WO2005050751A3 (en) 2005-07-28
JP2007516611A (en) 2007-06-21
WO2005050751A2 (en) 2005-06-02
KR20060113710A (en) 2006-11-02
JP4980718B2 (en) 2012-07-18
EP1683209A2 (en) 2006-07-26

Similar Documents

Publication Publication Date Title
TW200524461A (en) Encapsulation assembly for electronic devices
US20100270919A1 (en) Flat plate encapsulation assembly for electronic devices
TWI391359B (en) Antimony-free glass, antimony-free frit and a glass package that is hermetically sealed with the frit
TWI391361B (en) Low softening point glass composition, bonding material using same and electronic parts
JP6619804B2 (en) Tellurate bonded glass having a processing temperature of 420 ° C. or lower
KR101070413B1 (en) glass composition
JP2008218393A (en) Seal for light emitting display device and method
JP6098984B2 (en) Antimony-free glass, antimony-free frit, and glass package hermetically sealed with the frit
JP2009126782A (en) Low melting point frit paste composition and sealing method for electric element using the same
WO2013005600A1 (en) Glass composition, glass frit containing same, glass paste containing same, and electrical/electronic component obtained using same
US10580944B2 (en) Wavelength conversion member, light-emitting device, and method for manufacturing wavelength conversion member
CN1871718A (en) Encapsulation assembly for electronic devices
TW201121916A (en) Glass for diffusion layer in organic led element, and organic led element utilizing same
JP2008044839A (en) Borosilicate glass frit for hermetic sealing of light emitting element display
CN101903300A (en) Be used on sheet glass, making the thickener that contains frit of sintered frit pattern
TW201246527A (en) Glass member with sealing material layer, electronic device using same and method for producing same
JP2012106891A (en) Lead-free glass for sealing, sealing material and sealing material paste
JP2007177207A (en) Curable silicone resin composition, electronic part, air tight container and light-emitting device by using the same
WO2013099479A1 (en) Laminate, and organic el element, window and solar cell module, each using same
CN105555726A (en) Antimony-free glass, antimony-free frit and a glass package that is hermetically sealed with the frit
JP6595452B2 (en) Low melting point glass composition, method for producing seal, method for producing device, and electronic device or electronic circuit
JP4506753B2 (en) Organic EL device and method for manufacturing the same
TW201249772A (en) Glass composition for sealing and display panel comprising the same
KR20130134564A (en) Frit composition for sealing electric component panels and electric components sealed with said frit composition
MXPA06005270A (en) Encapsulation assembly for electronic devices

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees