JP2007511894A - 半導体製造プロセスの過程で導電面を不動態化するための方法 - Google Patents

半導体製造プロセスの過程で導電面を不動態化するための方法 Download PDF

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Publication number
JP2007511894A
JP2007511894A JP2006532518A JP2006532518A JP2007511894A JP 2007511894 A JP2007511894 A JP 2007511894A JP 2006532518 A JP2006532518 A JP 2006532518A JP 2006532518 A JP2006532518 A JP 2006532518A JP 2007511894 A JP2007511894 A JP 2007511894A
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semiconductor wafer
solution
cmp
solvent
anticorrosive
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JP2006532518A
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Japanese (ja)
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JP2007511894A5 (https=
Inventor
シー． フレーク、ジョン
イー． クーパー、ケビン
ウスマニ、サイファイ
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NXP USA Inc
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NXP USA Inc
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Publication of JP2007511894A publication Critical patent/JP2007511894A/ja
Publication of JP2007511894A5 publication Critical patent/JP2007511894A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/38—Products with no well-defined composition, e.g. natural products
    • C11D3/382—Vegetable products, e.g. soya meal, wood flour, sawdust
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
    • C11D1/146—Sulfuric acid esters
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/34—Derivatives of acids of phosphorus
    • C11D1/345—Phosphates or phosphites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006532518A 2003-05-07 2004-04-30 半導体製造プロセスの過程で導電面を不動態化するための方法 Pending JP2007511894A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/431,053 US7188630B2 (en) 2003-05-07 2003-05-07 Method to passivate conductive surfaces during semiconductor processing
PCT/US2004/013373 WO2004102620A2 (en) 2003-05-07 2004-04-30 Method to passivate conductive surfaces during semiconductor processing

Publications (2)

Publication Number Publication Date
JP2007511894A true JP2007511894A (ja) 2007-05-10
JP2007511894A5 JP2007511894A5 (https=) 2007-06-21

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ID=33416375

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Application Number Title Priority Date Filing Date
JP2006532518A Pending JP2007511894A (ja) 2003-05-07 2004-04-30 半導体製造プロセスの過程で導電面を不動態化するための方法

Country Status (7)

Country Link
US (2) US7188630B2 (https=)
EP (1) EP1625247A2 (https=)
JP (1) JP2007511894A (https=)
KR (1) KR101059006B1 (https=)
CN (1) CN1784513A (https=)
TW (1) TW200504855A (https=)
WO (1) WO2004102620A2 (https=)

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US8187966B2 (en) 2008-03-26 2012-05-29 Renesas Electronics Corporation Manufacturing method for semiconductor integrated circuit device
CN111863592A (zh) * 2019-04-29 2020-10-30 中芯国际集成电路制造(上海)有限公司 研磨后清洗方法以及半导体结构的形成方法

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CN1803964B (zh) * 1998-12-28 2010-12-15 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
US7387970B2 (en) * 2003-05-07 2008-06-17 Freescale Semiconductor, Inc. Method of using an aqueous solution and composition thereof
US7188630B2 (en) * 2003-05-07 2007-03-13 Freescale Semiconductor, Inc. Method to passivate conductive surfaces during semiconductor processing
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
US7939482B2 (en) * 2005-05-25 2011-05-10 Freescale Semiconductor, Inc. Cleaning solution for a semiconductor wafer
US7674725B2 (en) * 2005-05-25 2010-03-09 Freescale Semiconductor, Inc. Treatment solution and method of applying a passivating layer
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
WO2007087831A1 (en) * 2006-02-03 2007-08-09 Freescale Semiconductor, Inc. 'universal' barrier cmp slurry for use with low dielectric constant interlayer dielectrics
US20090301867A1 (en) * 2006-02-24 2009-12-10 Citibank N.A. Integrated system for semiconductor substrate processing using liquid phase metal deposition
US7803719B2 (en) * 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
MX2009002368A (es) * 2006-08-30 2009-04-24 Saint Gobain Ceramics Composiciones fluidas acuosas para suspensiones esoesas abrasivas, metodos de produccion y metodo de uso de las mismas.
WO2008029334A1 (en) * 2006-09-04 2008-03-13 Nxp B.V. Fabrication of self-assembled nanowire-type interconnects on a semiconductor device
KR101202720B1 (ko) * 2008-02-29 2012-11-19 주식회사 엘지화학 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법
US8580656B2 (en) * 2008-07-14 2013-11-12 Air Products And Chemicals, Inc. Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor
US20100215841A1 (en) 2009-02-20 2010-08-26 E.I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces
US8088690B2 (en) * 2009-03-31 2012-01-03 International Business Machines Corporation CMP method
KR101104369B1 (ko) * 2009-04-22 2012-01-16 주식회사 엘지화학 화학적 기계적 연마용 슬러리
US20110045203A1 (en) * 2009-08-21 2011-02-24 E. I. Du Pont De Nemours And Company Process for inhibiting oxide formation on copper surfaces
US20110117696A1 (en) * 2009-11-19 2011-05-19 Air Liquide Electronics U.S. Lp CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS
CN102110641A (zh) * 2009-12-29 2011-06-29 中芯国际集成电路制造(上海)有限公司 在化学机械研磨过程中防止钨塞凹陷缺陷的方法
US8883701B2 (en) 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
KR20130084932A (ko) * 2012-01-18 2013-07-26 삼성전자주식회사 반도체 소자의 제조 방법
US9481855B2 (en) * 2012-09-17 2016-11-01 Ekc Technology Inc Cleaning composition and method for cleaning a semiconductor device substrate after chemical mechanical polishing
US8920567B2 (en) 2013-03-06 2014-12-30 International Business Machines Corporation Post metal chemical-mechanical planarization cleaning process
CN105658757B (zh) * 2013-10-23 2019-02-19 东进世美肯株式会社 金属膜抛光浆料组合物及使用其减少金属膜抛光时产生的划痕的方法
US9971073B2 (en) * 2014-04-14 2018-05-15 Corning Incorporated Enhanced performance metallic based optical mirror substrates
US9666447B2 (en) 2014-10-28 2017-05-30 Tokyo Electron Limited Method for selectivity enhancement during dry plasma etching
CN108250977B (zh) * 2016-12-28 2021-08-27 安集微电子科技（上海）股份有限公司 一种用于阻挡层平坦化的化学机械抛光液
US10181408B2 (en) * 2017-01-31 2019-01-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives
CN110965115A (zh) * 2020-01-02 2020-04-07 荆门德威格林美钨资源循环利用有限公司 一种钛合金表面氧化层的去除方法
CN112246747B (zh) * 2020-09-30 2021-09-17 青岛金汇源电子有限公司 一种连续式半导体晶圆蚀刻设备

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8187966B2 (en) 2008-03-26 2012-05-29 Renesas Electronics Corporation Manufacturing method for semiconductor integrated circuit device
CN111863592A (zh) * 2019-04-29 2020-10-30 中芯国际集成电路制造(上海)有限公司 研磨后清洗方法以及半导体结构的形成方法

Also Published As

Publication number Publication date
US20080038994A1 (en) 2008-02-14
CN1784513A (zh) 2006-06-07
US20040224521A1 (en) 2004-11-11
KR20050120816A (ko) 2005-12-23
TW200504855A (en) 2005-02-01
KR101059006B1 (ko) 2011-08-23
EP1625247A2 (en) 2006-02-15
WO2004102620A2 (en) 2004-11-25
US7579279B2 (en) 2009-08-25
US7188630B2 (en) 2007-03-13
WO2004102620A3 (en) 2005-04-07
WO2004102620B1 (en) 2005-05-19

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