JP2007508389A5 - - Google Patents
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- Publication number
- JP2007508389A5 JP2007508389A5 JP2006535589A JP2006535589A JP2007508389A5 JP 2007508389 A5 JP2007508389 A5 JP 2007508389A5 JP 2006535589 A JP2006535589 A JP 2006535589A JP 2006535589 A JP2006535589 A JP 2006535589A JP 2007508389 A5 JP2007508389 A5 JP 2007508389A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- cycloalkyl
- alkyl
- tantalum
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 47
- 229910052715 tantalum Inorganic materials 0.000 claims 32
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 29
- 239000002243 precursor Substances 0.000 claims 26
- 125000006552 (C3-C8) cycloalkyl group Chemical group 0.000 claims 20
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 16
- 230000004888 barrier function Effects 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 15
- 239000000203 mixture Substances 0.000 claims 14
- 229910052757 nitrogen Inorganic materials 0.000 claims 12
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims 12
- -1 C 1 -C 4 alkylsilyl Chemical group 0.000 claims 11
- 239000000463 material Substances 0.000 claims 11
- 150000001412 amines Chemical class 0.000 claims 10
- 239000002904 solvent Substances 0.000 claims 10
- 238000000151 deposition Methods 0.000 claims 9
- 125000001424 substituent group Chemical group 0.000 claims 9
- 125000000041 C6-C10 aryl group Chemical group 0.000 claims 8
- 125000000753 cycloalkyl group Chemical group 0.000 claims 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 8
- 150000001875 compounds Chemical class 0.000 claims 7
- 238000004377 microelectronic Methods 0.000 claims 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 6
- 238000005229 chemical vapour deposition Methods 0.000 claims 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 6
- 125000003118 aryl group Chemical group 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims 4
- 238000000231 atomic layer deposition Methods 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 claims 4
- 229910004200 TaSiN Inorganic materials 0.000 claims 3
- 238000001465 metallisation Methods 0.000 claims 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 2
- GIOFUNUXSIHMHA-UHFFFAOYSA-N diethylazanide;dimethylazanide;tantalum(5+) Chemical compound CCN(CC)[Ta](N(C)C)(N(C)C)(N(C)C)N(CC)CC GIOFUNUXSIHMHA-UHFFFAOYSA-N 0.000 claims 2
- 239000012705 liquid precursor Substances 0.000 claims 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims 2
- 239000011550 stock solution Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 238000005019 vapor deposition process Methods 0.000 claims 2
- 230000008016 vaporization Effects 0.000 claims 2
- 239000008096 xylene Substances 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/684,545 US6960675B2 (en) | 2003-10-14 | 2003-10-14 | Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
| PCT/US2004/033622 WO2005037847A1 (en) | 2003-10-14 | 2004-10-12 | Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007508389A JP2007508389A (ja) | 2007-04-05 |
| JP2007508389A5 true JP2007508389A5 (enExample) | 2007-11-29 |
Family
ID=34422979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006535589A Pending JP2007508389A (ja) | 2003-10-14 | 2004-10-12 | タンタル含有膜を堆積させるためのタンタルアミド錯体、及びそれを製造する方法。 |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US6960675B2 (enExample) |
| JP (1) | JP2007508389A (enExample) |
| KR (1) | KR20060101477A (enExample) |
| GB (1) | GB2425308A (enExample) |
| WO (1) | WO2005037847A1 (enExample) |
Families Citing this family (27)
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| KR20050091488A (ko) * | 2004-03-12 | 2005-09-15 | 주식회사 유피케미칼 | 세라믹 또는 금속박막 증착용 전구체 화합물 및 그제조방법 |
| US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
| US7605469B2 (en) | 2004-06-30 | 2009-10-20 | Intel Corporation | Atomic layer deposited tantalum containing adhesion layer |
| US9312557B2 (en) * | 2005-05-11 | 2016-04-12 | Schlumberger Technology Corporation | Fuel cell apparatus and method for downhole power systems |
| WO2007005088A2 (en) * | 2005-07-01 | 2007-01-11 | Honeywell International Inc. | Vaporizable metalorganic compounds for deposition of metals and metal-containing thin films |
| US7521356B2 (en) * | 2005-09-01 | 2009-04-21 | Micron Technology, Inc. | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
| US7956207B2 (en) * | 2006-09-28 | 2011-06-07 | Praxair Technology, Inc. | Heteroleptic organometallic compounds |
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| US20100209610A1 (en) * | 2007-07-16 | 2010-08-19 | Advanced Technology Materials, Inc. | Group iv complexes as cvd and ald precursors for forming metal-containing thin films |
| US20090275164A1 (en) * | 2008-05-02 | 2009-11-05 | Advanced Technology Materials, Inc. | Bicyclic guanidinates and bridging diamides as cvd/ald precursors |
| US8802194B2 (en) | 2008-05-29 | 2014-08-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
| US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
| KR20140085461A (ko) | 2011-09-27 | 2014-07-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 니켈 비스 디아자부타디엔 전구체, 그들의 합성, 및 니켈 함유 필름 침착을 위한 그들의 용도 |
| US8815344B2 (en) * | 2012-03-14 | 2014-08-26 | Applied Materials, Inc. | Selective atomic layer depositions |
| WO2013177326A1 (en) * | 2012-05-25 | 2013-11-28 | Advanced Technology Materials, Inc. | Silicon precursors for low temperature ald of silicon-based thin-films |
| US9460932B2 (en) | 2013-11-11 | 2016-10-04 | Applied Materials, Inc. | Surface poisoning using ALD for high selectivity deposition of high aspect ratio features |
| JP6337116B2 (ja) * | 2013-11-13 | 2018-06-06 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 第５族遷移金属含有膜を蒸着させるための第５族遷移金属含有化合物 |
| CN106916072B (zh) * | 2015-12-24 | 2018-09-11 | 苏州复纳电子科技有限公司 | 一种五(二甲氨基)钽合成方法 |
| TW201722971A (zh) * | 2015-12-28 | 2017-07-01 | Up Chemical Co Ltd | 鉭化合物、其製備方法、包含其的膜沉積用前體組合物及利用該前體組合物的膜沉積方法 |
| CN106800572B (zh) * | 2016-11-24 | 2019-09-20 | 苏州复纳电子科技有限公司 | 一种三(二乙基氨基)叔丁酰胺钽的合成方法 |
| TWI862702B (zh) * | 2019-10-08 | 2024-11-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用於沉積含鋰層、島或簇的鋰前驅體及使用彼之方法 |
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-
2003
- 2003-10-14 US US10/684,545 patent/US6960675B2/en not_active Expired - Lifetime
-
2004
- 2004-10-12 JP JP2006535589A patent/JP2007508389A/ja active Pending
- 2004-10-12 WO PCT/US2004/033622 patent/WO2005037847A1/en not_active Ceased
- 2004-10-12 KR KR1020067008212A patent/KR20060101477A/ko not_active Ceased
- 2004-10-12 GB GB0609590A patent/GB2425308A/en not_active Withdrawn
-
2005
- 2005-09-12 US US11/224,588 patent/US7198815B2/en not_active Expired - Lifetime
-
2007
- 2007-01-23 US US11/625,918 patent/US7371878B2/en not_active Expired - Lifetime
-
2008
- 2008-05-12 US US12/119,463 patent/US7709384B2/en not_active Expired - Fee Related
-
2010
- 2010-05-04 US US12/773,650 patent/US7838073B2/en not_active Expired - Fee Related
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