GB2425308A - Tantalum amide complexes for depositing tantalum-containing films, and method of making same - Google Patents

Tantalum amide complexes for depositing tantalum-containing films, and method of making same Download PDF

Info

Publication number
GB2425308A
GB2425308A GB0609590A GB0609590A GB2425308A GB 2425308 A GB2425308 A GB 2425308A GB 0609590 A GB0609590 A GB 0609590A GB 0609590 A GB0609590 A GB 0609590A GB 2425308 A GB2425308 A GB 2425308A
Authority
GB
United Kingdom
Prior art keywords
tantalum
depositing
making same
containing films
amide complexes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0609590A
Other languages
English (en)
Other versions
GB0609590D0 (en
Inventor
Tianniu Chen
Chongying Xu
Thomas H Baum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of GB0609590D0 publication Critical patent/GB0609590D0/en
Publication of GB2425308A publication Critical patent/GB2425308A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/65—Metal complexes of amines
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/005—Compounds of elements of Group 5 of the Periodic Table without metal-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
GB0609590A 2003-10-14 2004-10-12 Tantalum amide complexes for depositing tantalum-containing films, and method of making same Withdrawn GB2425308A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/684,545 US6960675B2 (en) 2003-10-14 2003-10-14 Tantalum amide complexes for depositing tantalum-containing films, and method of making same
PCT/US2004/033622 WO2005037847A1 (en) 2003-10-14 2004-10-12 Tantalum amide complexes for depositing tantalum-containing films, and method of making same

Publications (2)

Publication Number Publication Date
GB0609590D0 GB0609590D0 (en) 2006-06-21
GB2425308A true GB2425308A (en) 2006-10-25

Family

ID=34422979

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0609590A Withdrawn GB2425308A (en) 2003-10-14 2004-10-12 Tantalum amide complexes for depositing tantalum-containing films, and method of making same

Country Status (5)

Country Link
US (5) US6960675B2 (enExample)
JP (1) JP2007508389A (enExample)
KR (1) KR20060101477A (enExample)
GB (1) GB2425308A (enExample)
WO (1) WO2005037847A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323581B1 (en) * 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
KR20050091488A (ko) * 2004-03-12 2005-09-15 주식회사 유피케미칼 세라믹 또는 금속박막 증착용 전구체 화합물 및 그제조방법
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
US7605469B2 (en) 2004-06-30 2009-10-20 Intel Corporation Atomic layer deposited tantalum containing adhesion layer
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
WO2007005088A2 (en) * 2005-07-01 2007-01-11 Honeywell International Inc. Vaporizable metalorganic compounds for deposition of metals and metal-containing thin films
US7521356B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
US7956207B2 (en) * 2006-09-28 2011-06-07 Praxair Technology, Inc. Heteroleptic organometallic compounds
US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
WO2008128141A2 (en) * 2007-04-12 2008-10-23 Advanced Technology Materials, Inc. Zirconium, hafnuim, titanium, and silicon precursors for ald/cvd
US8142847B2 (en) * 2007-07-13 2012-03-27 Rohm And Haas Electronic Materials Llc Precursor compositions and methods
US20100209610A1 (en) * 2007-07-16 2010-08-19 Advanced Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
KR20140085461A (ko) 2011-09-27 2014-07-07 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 니켈 비스 디아자부타디엔 전구체, 그들의 합성, 및 니켈 함유 필름 침착을 위한 그들의 용도
US8815344B2 (en) * 2012-03-14 2014-08-26 Applied Materials, Inc. Selective atomic layer depositions
WO2013177326A1 (en) * 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
US9460932B2 (en) 2013-11-11 2016-10-04 Applied Materials, Inc. Surface poisoning using ALD for high selectivity deposition of high aspect ratio features
JP6337116B2 (ja) * 2013-11-13 2018-06-06 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 第５族遷移金属含有膜を蒸着させるための第５族遷移金属含有化合物
CN106916072B (zh) * 2015-12-24 2018-09-11 苏州复纳电子科技有限公司 一种五(二甲氨基)钽合成方法
TW201722971A (zh) * 2015-12-28 2017-07-01 Up Chemical Co Ltd 鉭化合物、其製備方法、包含其的膜沉積用前體組合物及利用該前體組合物的膜沉積方法
CN106800572B (zh) * 2016-11-24 2019-09-20 苏州复纳电子科技有限公司 一种三(二乙基氨基)叔丁酰胺钽的合成方法
TWI862702B (zh) * 2019-10-08 2024-11-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於沉積含鋰層、島或簇的鋰前驅體及使用彼之方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6552209B1 (en) * 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
US6593484B2 (en) * 2000-12-25 2003-07-15 Kabushikikaisha Kojundokagaku Kenkyusho Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for mocvd using the same, and a method of forming a tantalum nitride film using the same

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147556A (en) * 1972-01-12 1979-04-03 Ppg Industries, Inc. Nonflammable beta diketonate composition
US3843536A (en) * 1972-12-01 1974-10-22 Du Pont Metal-deactivated organic compositions and process therefor
US3978272A (en) * 1974-03-13 1976-08-31 Ppg Industries, Inc. Coated article for solar control and process for its production
US4401474A (en) * 1979-12-03 1983-08-30 Ppg Industries, Inc. Pyrolytic coating reactant for defect and durability control
JPS58203443A (ja) * 1982-05-24 1983-11-26 Hitachi Ltd ホトマスクの白点欠陥修正用組成物
JPS59168678A (ja) 1983-03-16 1984-09-22 Hitachi Ltd 反射防止膜形成用組成物
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
EP0252755A1 (en) * 1986-07-11 1988-01-13 Unvala Limited Chemical vapour deposition
GB2202865A (en) * 1987-03-26 1988-10-05 Plessey Co Plc Thin film deposition process
US4933317A (en) * 1988-04-25 1990-06-12 American Telephone And Telegraph Company Bismuth oxide superconductors, and devices and systems comprising such a superconductor
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US6218518B1 (en) * 1990-07-06 2001-04-17 Advanced Technology Materials, Inc. Tetrahydrofuran-adducted group II β-diketonate complexes as source reagents for chemical vapor deposition
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US6110529A (en) * 1990-07-06 2000-08-29 Advanced Tech Materials Method of forming metal films on a substrate by chemical vapor deposition
US5711816A (en) * 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
US5820664A (en) * 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US7323581B1 (en) * 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US5362328A (en) * 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
GB9117562D0 (en) 1991-08-14 1991-10-02 Ass Octel Group ii metal betadiketonates
US5266355A (en) * 1992-06-18 1993-11-30 Eastman Kodak Company Chemical vapor deposition of metal oxide films
JP2799134B2 (ja) 1992-09-22 1998-09-17 三菱電機株式会社 チタン酸バリウムストロンチウム系誘電体薄膜用ｃｖｄ原料およびメモリー用キャパシタ
US5376409B1 (en) * 1992-12-21 1997-06-03 Univ New York State Res Found Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials
GB2274456A (en) * 1993-01-22 1994-07-27 Timothy John Leedham Volatile rare earth beta-diketone complexes
JP3319138B2 (ja) 1994-03-17 2002-08-26 ソニー株式会社 タンタルを含む高誘電体膜の形成方法
JPH0874055A (ja) 1994-07-07 1996-03-19 Mitsubishi Materials Corp 高純度銀膜の形成方法
US5679815A (en) * 1994-09-16 1997-10-21 Advanced Technology Materials, Inc. Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
US5656329A (en) * 1995-03-13 1997-08-12 Texas Instruments Incorporated Chemical vapor deposition of metal oxide films through ester elimination reactions
US5894064A (en) * 1995-03-13 1999-04-13 Hampden-Smith; Mark Solution routes to metal oxide films through ester elimination reactions
US6344079B1 (en) * 1995-03-31 2002-02-05 Advanced Technology Materials, Inc. Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US6214105B1 (en) * 1995-03-31 2001-04-10 Advanced Technology Materials, Inc. Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US6444264B2 (en) * 1995-03-31 2002-09-03 Advanced Technology Materials, Inc. Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions
US5916359A (en) * 1995-03-31 1999-06-29 Advanced Technology Materials, Inc. Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US6077571A (en) * 1995-12-19 2000-06-20 The Research Foundation Of State University Of New York Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation
US6303391B1 (en) 1997-06-26 2001-10-16 Advanced Technology Materials, Inc. Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
US5876503A (en) * 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
US5935283A (en) * 1996-12-31 1999-08-10 Atmi Ecosys Corporation Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system
US6018065A (en) * 1997-11-10 2000-01-25 Advanced Technology Materials, Inc. Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
US6143191A (en) * 1997-11-10 2000-11-07 Advanced Technology Materials, Inc. Method for etch fabrication of iridium-based electrode structures
US6277436B1 (en) * 1997-11-26 2001-08-21 Advanced Technology Materials, Inc. Liquid delivery MOCVD process for deposition of high frequency dielectric materials
US6511936B1 (en) * 1998-02-12 2003-01-28 University Of Delaware Catalyst compounds with β-diminate anionic ligands and processes for polymerizing olefins
US6006582A (en) * 1998-03-17 1999-12-28 Advanced Technology Materials, Inc. Hydrogen sensor utilizing rare earth metal thin film detection element
US6284654B1 (en) * 1998-04-16 2001-09-04 Advanced Technology Materials, Inc. Chemical vapor deposition process for fabrication of hybrid electrodes
CN1145632C (zh) * 1998-11-26 2004-04-14 因芬尼昂技术股份公司 第iv副族元素的络合化合物
JP3632475B2 (ja) * 1999-01-13 2005-03-23 三菱マテリアル株式会社 有機アミノタンタル化合物及びこれを含む有機金属化学蒸着用原料溶液並びにこれから作られる窒化タンタル膜
US6265222B1 (en) * 1999-01-15 2001-07-24 Dimeo, Jr. Frank Micro-machined thin film hydrogen gas sensor, and method of making and using the same
US6273951B1 (en) * 1999-06-16 2001-08-14 Micron Technology, Inc. Precursor mixtures for use in preparing layers on substrates
US7094284B2 (en) * 1999-10-07 2006-08-22 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same
US6399208B1 (en) * 1999-10-07 2002-06-04 Advanced Technology Materials Inc. Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
WO2003040150A1 (en) * 2001-11-09 2003-05-15 Yun Chi Volatile noble metal organometallic complexes
US6989457B2 (en) * 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
US7034169B1 (en) * 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US7439338B2 (en) * 2005-06-28 2008-10-21 Micron Technology, Inc. Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US20090087561A1 (en) * 2007-09-28 2009-04-02 Advanced Technology Materials, Inc. Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6593484B2 (en) * 2000-12-25 2003-07-15 Kabushikikaisha Kojundokagaku Kenkyusho Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for mocvd using the same, and a method of forming a tantalum nitride film using the same
US6552209B1 (en) * 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films

Also Published As

Publication number Publication date
US6960675B2 (en) 2005-11-01
US20060013943A1 (en) 2006-01-19
US20100215842A1 (en) 2010-08-26
KR20060101477A (ko) 2006-09-25
US20050079290A1 (en) 2005-04-14
US7838073B2 (en) 2010-11-23
JP2007508389A (ja) 2007-04-05
GB0609590D0 (en) 2006-06-21
US20070117385A1 (en) 2007-05-24
US7371878B2 (en) 2008-05-13
US7198815B2 (en) 2007-04-03
US7709384B2 (en) 2010-05-04
US20090004858A1 (en) 2009-01-01
WO2005037847A1 (en) 2005-04-28

Similar Documents

Publication Publication Date Title
GB2425308A (en) Tantalum amide complexes for depositing tantalum-containing films, and method of making same
EP1953809A3 (en) Method for depositing metal films by CVD on diffusion barrier layers
TW200606168A (en) Copper (I) compounds useful as deposition precursors of copper thin films
WO2007147020A3 (en) Cobalt precursors useful for forming cobalt-containing films on substrates
EP1139418A3 (en) Reduced fluorine contamination for tungsten cvd
AU2001271308A1 (en) Polishing composition for metal cmp
WO2003031679B1 (en) Method for depositing metal layers employing sequential deposition techniques
EP1464724A3 (en) Organometallic compounds suitable for use in vapor deposition processes
WO2006028573A3 (en) Deposition of ruthenium and/or ruthenium oxide films
WO2006057709A3 (en) Method for deposition of metal layers from metal carbonyl precursors
GB2354762A (en) Tantalum amide precursors for deposition of tantalum nitride on a substrate
WO2008088563A3 (en) Precursor compositions for ald/cvd of group ii ruthenate thin films
Bang et al. Plasma-enhanced atomic layer deposition of Ni
WO2005121397A3 (en) Controlled vapor deposition of multilayered coatings adhered by an oxide layer
WO2006007077A3 (en) Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
WO2003029515A3 (en) Formation of composite tungsten films
WO2004075248A3 (fr) Procede de revetement d'une surface, fabrication d'interconnexions en microelectronique utilisant ce procede, et circuits integres
ATE489726T1 (de) Verfahren zur ausbildung dielektrischer filme
TW200717624A (en) Method for integrating a ruthenium layer with bulk copper in copper metallization
GB2392676A (en) Method of depositing aluminium nitride
WO2004081986A3 (en) Method to planarize and reduce defect density of silicon germanium
WO2002046242A3 (en) Volatile organometallic complexes of lowered reactivity suitable for use in chemical vapor deposition of metal oxide films
WO2004094689A3 (en) Volatile copper(i) complexes for deposition of copper films by atomic layer deposition
MY148608A (en) Titanium nitride thin film formation on metal substrate by chemical vapor depositions in a magnetized sheet plasma source
EP1249860A3 (en) Method to improve copper thin film adhesion to metal nitride substrates by the addition of water

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)