JP2007503728A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007503728A5 JP2007503728A5 JP2006532556A JP2006532556A JP2007503728A5 JP 2007503728 A5 JP2007503728 A5 JP 2007503728A5 JP 2006532556 A JP2006532556 A JP 2006532556A JP 2006532556 A JP2006532556 A JP 2006532556A JP 2007503728 A5 JP2007503728 A5 JP 2007503728A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- underlayer
- top image
- image layer
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 36
- 239000007789 gas Substances 0.000 claims 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 14
- 238000005530 etching Methods 0.000 claims 14
- 239000001301 oxygen Substances 0.000 claims 14
- 229910052760 oxygen Inorganic materials 0.000 claims 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 239000004215 Carbon black (E152) Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229930195733 hydrocarbon Natural products 0.000 claims 2
- 150000002430 hydrocarbons Chemical class 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 238000005286 illumination Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 230000002829 reductive effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/435,130 US7049052B2 (en) | 2003-05-09 | 2003-05-09 | Method providing an improved bi-layer photoresist pattern |
| PCT/US2004/013818 WO2004102277A2 (en) | 2003-05-09 | 2004-04-29 | Method providing an improved bi-layer photoresist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007503728A JP2007503728A (ja) | 2007-02-22 |
| JP2007503728A5 true JP2007503728A5 (enrdf_load_stackoverflow) | 2007-06-21 |
Family
ID=33416877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006532556A Pending JP2007503728A (ja) | 2003-05-09 | 2004-04-29 | 改良されたバイレイヤフォトレジストパターンを提供する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7049052B2 (enrdf_load_stackoverflow) |
| EP (1) | EP1623275A2 (enrdf_load_stackoverflow) |
| JP (1) | JP2007503728A (enrdf_load_stackoverflow) |
| KR (2) | KR101144019B1 (enrdf_load_stackoverflow) |
| CN (1) | CN1816777B (enrdf_load_stackoverflow) |
| TW (1) | TWI348180B (enrdf_load_stackoverflow) |
| WO (1) | WO2004102277A2 (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8048325B2 (en) * | 2003-03-31 | 2011-11-01 | Tokyo Electron Limited | Method and apparatus for multilayer photoresist dry development |
| US7785753B2 (en) * | 2006-05-17 | 2010-08-31 | Lam Research Corporation | Method and apparatus for providing mask in semiconductor processing |
| JP2008085005A (ja) * | 2006-09-27 | 2008-04-10 | Elpida Memory Inc | 半導体装置の製造方法 |
| US8283255B2 (en) * | 2007-05-24 | 2012-10-09 | Lam Research Corporation | In-situ photoresist strip during plasma etching of active hard mask |
| US20090208865A1 (en) * | 2008-02-19 | 2009-08-20 | International Business Machines Corporation | Photolithography focus improvement by reduction of autofocus radiation transmission into substrate |
| US8753804B2 (en) | 2008-03-11 | 2014-06-17 | Lam Research Corporation | Line width roughness improvement with noble gas plasma |
| KR101355434B1 (ko) | 2012-06-12 | 2014-01-28 | 한국생산기술연구원 | 미세 홀이 배열된 폴리머 멤브레인을 포함하는 플라스틱 챔버 플레이트의 제작 방법 |
| US9911620B2 (en) * | 2015-02-23 | 2018-03-06 | Lam Research Corporation | Method for achieving ultra-high selectivity while etching silicon nitride |
| CN109071576B (zh) | 2016-05-03 | 2021-12-28 | 美国陶氏有机硅公司 | 倍半硅氧烷树脂和氧杂胺组合物 |
| US20190169436A1 (en) * | 2016-05-03 | 2019-06-06 | Dow Silicones Corporation | Silsesquioxane resin and silyl-anhydride composition |
| US10643858B2 (en) | 2017-10-11 | 2020-05-05 | Samsung Electronics Co., Ltd. | Method of etching substrate |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5041361A (en) | 1988-08-08 | 1991-08-20 | Midwest Research Institute | Oxygen ion-beam microlithography |
| JPH02172223A (ja) | 1988-12-26 | 1990-07-03 | Hitachi Ltd | プラズマエッチング装置 |
| US5277749A (en) | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
| JP2547944B2 (ja) | 1992-09-30 | 1996-10-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法 |
| DE19504434C1 (de) | 1995-02-10 | 1996-05-15 | Siemens Ag | Verfahren zur Herstellung siliziumhaltiger Masken |
| JP2872637B2 (ja) | 1995-07-10 | 1999-03-17 | アプライド マテリアルズ インコーポレイテッド | マイクロ波プラズマベースアプリケータ |
| US5726102A (en) * | 1996-06-10 | 1998-03-10 | Vanguard International Semiconductor Corporation | Method for controlling etch bias in plasma etch patterning of integrated circuit layers |
| KR100249172B1 (ko) * | 1996-10-24 | 2000-03-15 | 김영환 | 감광막 식각방법 |
| US5985524A (en) | 1997-03-28 | 1999-11-16 | International Business Machines Incorporated | Process for using bilayer photoresist |
| EP0911697A3 (en) * | 1997-10-22 | 1999-09-15 | Interuniversitair Microelektronica Centrum Vzw | A fluorinated hard mask for micropatterning of polymers |
| JP2000305273A (ja) * | 1998-11-19 | 2000-11-02 | Applied Materials Inc | 遠紫外線ドライフォトリソグラフィー |
| US20010004510A1 (en) | 1998-12-15 | 2001-06-21 | Wheeler David R. | Refractory bilayer resist materials for lithography using highly attenuated radiation |
| TW478033B (en) * | 1999-02-26 | 2002-03-01 | Applied Materials Inc | Improved dry photolithography process for deep ultraviolet exposure |
| US6153530A (en) * | 1999-03-16 | 2000-11-28 | Applied Materials, Inc. | Post-etch treatment of plasma-etched feature surfaces to prevent corrosion |
| DE19919036C1 (de) | 1999-04-27 | 2001-01-11 | Bosch Gmbh Robert | Ätzmaske und Verfahren zu deren Herstellung |
| US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
| US20010024769A1 (en) * | 2000-02-08 | 2001-09-27 | Kevin Donoghue | Method for removing photoresist and residues from semiconductor device surfaces |
| KR100520188B1 (ko) | 2000-02-18 | 2005-10-10 | 주식회사 하이닉스반도체 | 부분적으로 가교화된 2층 포토레지스트용 중합체 |
| US6495311B1 (en) | 2000-03-17 | 2002-12-17 | International Business Machines Corporation | Bilayer liftoff process for high moment laminate |
| JP3403374B2 (ja) * | 2000-05-26 | 2003-05-06 | 松下電器産業株式会社 | 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法 |
| US6893969B2 (en) * | 2001-02-12 | 2005-05-17 | Lam Research Corporation | Use of ammonia for etching organic low-k dielectrics |
| US6541361B2 (en) * | 2001-06-27 | 2003-04-01 | Lam Research Corp. | Plasma enhanced method for increasing silicon-containing photoresist selectivity |
| JP3971603B2 (ja) | 2001-12-04 | 2007-09-05 | キヤノンアネルバ株式会社 | 絶縁膜エッチング装置及び絶縁膜エッチング方法 |
| US6551938B1 (en) * | 2002-01-25 | 2003-04-22 | Taiwon Semiconductor Manufacturing Company | N2/H2 chemistry for dry development in top surface imaging technology |
| US6716570B2 (en) | 2002-05-23 | 2004-04-06 | Institute Of Microelectronics | Low temperature resist trimming process |
| WO2004095551A1 (en) * | 2003-03-31 | 2004-11-04 | Tokyo Electron Limited | Method and apparatus for multilayer photoresist dry development |
| US7226706B2 (en) * | 2003-05-20 | 2007-06-05 | Taiwan Semiconductor Manufacturing Company | Modification of mask blank to avoid charging effect |
-
2003
- 2003-05-09 US US10/435,130 patent/US7049052B2/en not_active Expired - Lifetime
-
2004
- 2004-04-29 KR KR1020057021303A patent/KR101144019B1/ko not_active Expired - Fee Related
- 2004-04-29 WO PCT/US2004/013818 patent/WO2004102277A2/en active Application Filing
- 2004-04-29 CN CN2004800192167A patent/CN1816777B/zh not_active Expired - Fee Related
- 2004-04-29 JP JP2006532556A patent/JP2007503728A/ja active Pending
- 2004-04-29 KR KR1020117011312A patent/KR101155842B1/ko not_active Expired - Fee Related
- 2004-04-29 EP EP04751274A patent/EP1623275A2/en not_active Withdrawn
- 2004-05-04 TW TW093112508A patent/TWI348180B/zh not_active IP Right Cessation
-
2006
- 2006-03-24 US US11/388,859 patent/US20060166145A1/en not_active Abandoned