JP2007503723A - 光学アドレス式極紫外線モジュレータ及びこのモジュレータを含むリソグラフィー装置 - Google Patents

光学アドレス式極紫外線モジュレータ及びこのモジュレータを含むリソグラフィー装置 Download PDF

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JP2007503723A
JP2007503723A JP2006524747A JP2006524747A JP2007503723A JP 2007503723 A JP2007503723 A JP 2007503723A JP 2006524747 A JP2006524747 A JP 2006524747A JP 2006524747 A JP2006524747 A JP 2006524747A JP 2007503723 A JP2007503723 A JP 2007503723A
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Prior art keywords
modulator
lithographic apparatus
extreme ultraviolet
soft
substrate
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JP2006524747A
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Japanese (ja)
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JP2007503723A5 (enExample
Inventor
マクジオック，マルコム・ダブリュー
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プレックス・エルエルシー
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Publication of JP2007503723A publication Critical patent/JP2007503723A/ja
Publication of JP2007503723A5 publication Critical patent/JP2007503723A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2006524747A 2003-08-22 2004-08-19 光学アドレス式極紫外線モジュレータ及びこのモジュレータを含むリソグラフィー装置 Pending JP2007503723A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49720403P 2003-08-22 2003-08-22
PCT/US2004/027049 WO2005019936A2 (en) 2003-08-22 2004-08-19 Optically addressed extreme ultraviolet modulator and lithography system incorporating modulator

Publications (2)

Publication Number Publication Date
JP2007503723A true JP2007503723A (ja) 2007-02-22
JP2007503723A5 JP2007503723A5 (enExample) 2007-10-04

Family

ID=34216097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006524747A Pending JP2007503723A (ja) 2003-08-22 2004-08-19 光学アドレス式極紫外線モジュレータ及びこのモジュレータを含むリソグラフィー装置

Country Status (4)

Country Link
US (1) US7079306B2 (enExample)
EP (1) EP1664930A2 (enExample)
JP (1) JP2007503723A (enExample)
WO (1) WO2005019936A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9097983B2 (en) 2011-05-09 2015-08-04 Kenneth C. Johnson Scanned-spot-array EUV lithography system
US8994920B1 (en) 2010-05-07 2015-03-31 Kenneth C. Johnson Optical systems and methods for absorbance modulation
US9188874B1 (en) 2011-05-09 2015-11-17 Kenneth C. Johnson Spot-array imaging system for maskless lithography and parallel confocal microscopy
WO2015012982A1 (en) * 2013-07-22 2015-01-29 Johnson Kenneth C Scanned-spot-array duv lithography system
US8111380B2 (en) * 2007-09-14 2012-02-07 Luminescent Technologies, Inc. Write-pattern determination for maskless lithography
DE102010025222A1 (de) * 2010-06-23 2011-12-29 Carl Zeiss Smt Gmbh Steuerbare Spiegelanordnung, optisches System mit einer steuerbaren Spiegelanordnung und Verfahren zur Ansteuerung einer steuerbaren Spiegelanordnung
US8653454B2 (en) 2011-07-13 2014-02-18 Luminescent Technologies, Inc. Electron-beam image reconstruction
JP7356439B2 (ja) * 2018-04-03 2023-10-04 エーエスエムエル ネザーランズ ビー．ブイ． 光ビームの空間変調

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084656A (en) * 1997-12-02 2000-07-04 Electronics And Telecommunications Research Institute Programmable mask for exposure apparatus
US6159643A (en) * 1999-03-01 2000-12-12 Advanced Micro Devices, Inc. Extreme ultraviolet lithography reflective mask
JP2002506235A (ja) * 1998-03-02 2002-02-26 マイクロニック レーザー システムズ アクチボラゲット アドレス・レゾリューションが改善されたパターン・ジェネレータ
US6479195B1 (en) * 2000-09-15 2002-11-12 Intel Corporation Mask absorber for extreme ultraviolet lithography
JP2004501384A (ja) * 2000-04-17 2004-01-15 マイクロニック　レーザー　システムズ　アクチボラゲット 空間光変調器を利用したパターン形成システム

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178445A (en) 1989-06-09 1993-01-12 Garrett Moddel Optically addressed spatial light modulator
US5177628A (en) 1990-04-24 1993-01-05 The University Of Colorado Foundation, Inc. Self-powered optically addressed spatial light modulator
US5486936A (en) 1992-03-25 1996-01-23 Tomoegawa Paper Co., Ltd. Optically addressed spatial light modulator
EP0583114B1 (en) 1992-07-30 2001-09-12 Hamamatsu Photonics K.K. Optically-addressed type spatial light modulator
JP2695600B2 (ja) 1993-10-01 1997-12-24 浜松ホトニクス株式会社 光学検査装置
US5617203A (en) 1993-10-01 1997-04-01 Hamamatsu Photonics K.K. Optical detector employing an optically-addressed spatial light modulator
US5637883A (en) 1995-02-27 1997-06-10 The United States Of America As Represented By The Secretary Of The Navy Optically addressed spatial light modulator using an intrinsic semiconductor active material and high resistivity cladding layers
US5691836A (en) 1995-07-11 1997-11-25 Sy Technology, Inc. Optically addressed spatial light modulator and method
US5691541A (en) 1996-05-14 1997-11-25 The Regents Of The University Of California Maskless, reticle-free, lithography
US6025950A (en) 1997-09-22 2000-02-15 Coretek, Inc. Monolithic all-semiconductor optically addressed spatial light modulator based on low-photoconductive semiconductors
JP2961230B1 (ja) 1998-07-13 1999-10-12 工業技術院長 金属超微粒子分散体及びその製造方法
US6489984B1 (en) * 1998-12-29 2002-12-03 Kenneth C. Johnson Pixel cross talk suppression in digital microprinters
US6498685B1 (en) 1999-01-11 2002-12-24 Kenneth C. Johnson Maskless, microlens EUV lithography system
US6140660A (en) 1999-03-23 2000-10-31 Massachusetts Institute Of Technology Optical synthetic aperture array
US6366389B1 (en) 1999-08-17 2002-04-02 Michael Wraback High contrast, ultrafast optically-addressed ultraviolet light modulator based upon optical anisotropy
FR2809190B1 (fr) 2000-05-22 2002-08-09 Centre Nat Rech Scient Procede de fabrication d'un modulateur de transmission pour microlithographie en ultraviolet profond et modulateur obtenu par ce procede

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084656A (en) * 1997-12-02 2000-07-04 Electronics And Telecommunications Research Institute Programmable mask for exposure apparatus
JP2002506235A (ja) * 1998-03-02 2002-02-26 マイクロニック レーザー システムズ アクチボラゲット アドレス・レゾリューションが改善されたパターン・ジェネレータ
US6159643A (en) * 1999-03-01 2000-12-12 Advanced Micro Devices, Inc. Extreme ultraviolet lithography reflective mask
JP2004501384A (ja) * 2000-04-17 2004-01-15 マイクロニック　レーザー　システムズ　アクチボラゲット 空間光変調器を利用したパターン形成システム
US6479195B1 (en) * 2000-09-15 2002-11-12 Intel Corporation Mask absorber for extreme ultraviolet lithography

Also Published As

Publication number Publication date
WO2005019936A2 (en) 2005-03-03
EP1664930A2 (en) 2006-06-07
US7079306B2 (en) 2006-07-18
US20050068613A1 (en) 2005-03-31
WO2005019936A3 (en) 2005-05-26

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