JP2007502917A5 - - Google Patents

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Publication number
JP2007502917A5
JP2007502917A5 JP2006524007A JP2006524007A JP2007502917A5 JP 2007502917 A5 JP2007502917 A5 JP 2007502917A5 JP 2006524007 A JP2006524007 A JP 2006524007A JP 2006524007 A JP2006524007 A JP 2006524007A JP 2007502917 A5 JP2007502917 A5 JP 2007502917A5
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JP
Japan
Prior art keywords
substrate
tera
layer
depositing
power
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JP2006524007A
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English (en)
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JP2007502917A (ja
JP4903567B2 (ja
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Priority claimed from US10/644,958 external-priority patent/US7371436B2/en
Application filed filed Critical
Publication of JP2007502917A publication Critical patent/JP2007502917A/ja
Publication of JP2007502917A5 publication Critical patent/JP2007502917A5/ja
Application granted granted Critical
Publication of JP4903567B2 publication Critical patent/JP4903567B2/ja
Expired - Fee Related legal-status Critical Current
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Claims (2)

  1. 基板に材料を堆積させる方法であって、
    前記基板を、プラズマソースを有するチャンバ内で、ＲＦ電源に結合された基板ホルダに配置することと、
    調整可能なエッチング耐性ＡＲＣ（ＴＥＲＡ）層を前記基板にＰＥＣＶＤを使用して堆積させることとを具備し、
    前記ＴＥＲＡ層の少なくとも一部分の堆積速度が、ＲＦ電力が基板ホルダに印加されないときより速くなるように、前記ＲＦ電源によって提供されるＲＦ電力が選ばれる方法。
  2. 基板への前記調整可能なエッチング耐性ＡＲＣ（ＴＥＲＡ）層の堆積は、ＴＥＲＡ層として少なくとも２つの層で堆積させることを含んでいる請求項１に記載の方法。
JP2006524007A 2003-08-21 2004-08-18 調整可能な光学的性質およびエッチング特性を有する材料を堆積させる方法と装置。 Expired - Fee Related JP4903567B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/644,958 2003-08-21
US10/644,958 US7371436B2 (en) 2003-08-21 2003-08-21 Method and apparatus for depositing materials with tunable optical properties and etching characteristics
PCT/US2004/026803 WO2005021832A2 (en) 2003-08-21 2004-08-18 Method and appartus for depositing materials with tunable properties

Publications (3)

Publication Number Publication Date
JP2007502917A JP2007502917A (ja) 2007-02-15
JP2007502917A5 true JP2007502917A5 (ja) 2007-10-11
JP4903567B2 JP4903567B2 (ja) 2012-03-28

Family

ID=34194197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006524007A Expired - Fee Related JP4903567B2 (ja) 2003-08-21 2004-08-18 調整可能な光学的性質およびエッチング特性を有する材料を堆積させる方法と装置。

Country Status (7)

Country Link
US (1) US7371436B2 (ja)
JP (1) JP4903567B2 (ja)
KR (1) KR101029286B1 (ja)
CN (1) CN100540733C (ja)
DE (1) DE112004001026T5 (ja)
TW (1) TWI248637B (ja)
WO (1) WO2005021832A2 (ja)

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US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
US7077903B2 (en) * 2003-11-10 2006-07-18 International Business Machines Corporation Etch selectivity enhancement for tunable etch resistant anti-reflective layer
US20050221020A1 (en) * 2004-03-30 2005-10-06 Tokyo Electron Limited Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
US7497959B2 (en) 2004-05-11 2009-03-03 International Business Machines Corporation Methods and structures for protecting one area while processing another area on a chip
JP5015534B2 (ja) * 2006-09-22 2012-08-29 財団法人高知県産業振興センター 絶縁膜の成膜方法
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
US20110151142A1 (en) * 2009-12-22 2011-06-23 Applied Materials, Inc. Pecvd multi-step processing with continuous plasma
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
JP2014082354A (ja) * 2012-10-17 2014-05-08 Hitachi High-Technologies Corp プラズマ処理装置
US10170278B2 (en) * 2013-01-11 2019-01-01 Applied Materials, Inc. Inductively coupled plasma source
US9275869B2 (en) * 2013-08-02 2016-03-01 Lam Research Corporation Fast-gas switching for etching
US9899210B2 (en) * 2015-10-20 2018-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical vapor deposition apparatus and method for manufacturing semiconductor device using the same
CN110945159B (zh) * 2017-07-28 2022-03-01 东京毅力科创株式会社 用于基板的后侧沉积的系统和方法
CN110106504B (zh) * 2019-04-04 2021-03-23 Tcl华星光电技术有限公司 一种蚀刻设备
DE102019129789A1 (de) 2019-11-05 2021-05-06 Aixtron Se Verfahren zum Abscheiden einer zweidimensionalen Schicht sowie CVD-Reaktor
US20210381107A1 (en) * 2020-06-03 2021-12-09 Micron Technology, Inc. Material deposition systems, and related methods and microelectronic devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
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JPS5687328A (en) * 1979-12-18 1981-07-15 Matsushita Electronics Corp Semiconductor treatment device
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
JPH04348031A (ja) * 1990-12-28 1992-12-03 Mitsubishi Electric Corp 化学気相成長装置
JP3276514B2 (ja) * 1994-04-26 2002-04-22 東京エレクトロン株式会社 プラズマ処理装置
JPH09148322A (ja) 1995-11-22 1997-06-06 Sharp Corp シリコン酸化膜の成膜方法及びプラズマｃｖｄ成膜装置
KR19990030660A (ko) * 1997-10-02 1999-05-06 윤종용 전자빔을 이용한 반도체장치의 층간 절연막 형성방법
JP2000021860A (ja) * 1998-07-03 2000-01-21 Hitachi Ltd 半導体装置およびその製造方法
JP3818561B2 (ja) * 1998-10-29 2006-09-06 エルジー フィリップス エルシーディー カンパニー リミテッド シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法
EP1077480B1 (en) * 1999-08-17 2008-11-12 Applied Materials, Inc. Method and apparatus to enhance properties of Si-O-C low K films
US6461980B1 (en) * 2000-01-28 2002-10-08 Applied Materials, Inc. Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber
JP2001308016A (ja) * 2000-04-24 2001-11-02 Matsushita Electric Ind Co Ltd 化学的気相成長装置および方法
JP2003179045A (ja) * 2001-12-13 2003-06-27 Tokyo Electron Ltd プラズマ処理装置及びその制御方法
US6869542B2 (en) * 2003-03-12 2005-03-22 International Business Machines Corporation Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials

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